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    • 42. 发明授权
    • Bitmap cluster analysis of defects in integrated circuits
    • 集成电路缺陷位图聚类分析
    • US08190952B2
    • 2012-05-29
    • US12728629
    • 2010-03-22
    • Tom T. HoJonathan B. BuckheitWeidong WangXin Sun
    • Tom T. HoJonathan B. BuckheitWeidong WangXin Sun
    • G11C29/00
    • G11C29/56G01R31/318533G11C29/56008G11C2029/5604
    • A system and method for defect analysis are disclosed wherein a defect data set is input into the system. A radius value is selected by a user, which is the maximum number of bits that bit failures can be separated from one another to be considered a bit cluster. When a defect data set is received, the system and method start with a fail bit and search for neighboring fail bits. The specified radius is used to qualify the found fail bits to be part of the bit cluster or not. If a minimum count of fail bits is not met, the system and method will stop searching and move to the next fail bit. If a minimum count of fail bits is met, the search continues for the next fail bit until the maximum fail bit count specified by the user is reached. Aggregation is provided such that once bit clusters have been classified, the number of clusters that have the exact match or partial match to each other is counted. The user may set the partial match as a threshold count to establish a match.
    • 公开了一种用于缺陷分析的系统和方法,其中缺陷数据集被输入到系统中。 半径值由用户选择,这是位故障可以彼此分离以被认为是位簇的最大位数。 当接收到缺陷数据集时,系统和方法以故障位开始,并搜索相邻的故障位。 指定的半径用于将找到的故障位限定为位集群的一部分。 如果不满足最小失败位计数,系统和方法将停止搜索并移动到下一个故障位。 如果满足最小失败位计数,则搜索继续下一个故障位,直到达到用户指定的最大故障位数。 提供聚合,使得一旦对位簇进行分类,就会计算出具有完全匹配或彼此部分匹配的聚类的数量。 用户可以将部分匹配设置为阈值计数以建立匹配。
    • 49. 发明授权
    • Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
    • 光栅形光束,电子束曝光策略采用二维多像素闪光场
    • US06262429B1
    • 2001-07-17
    • US09226361
    • 1999-01-06
    • Stephen A. RishtonJeffery K. VarnerAllan L. SagleLee H. VeneklasenWeidong Wang
    • Stephen A. RishtonJeffery K. VarnerAllan L. SagleLee H. VeneklasenWeidong Wang
    • G03F900
    • H01J37/3026B82Y10/00B82Y40/00H01J37/3174H01J2237/30488H01J2237/31776
    • An electron beam column (or other charged particle beam column) for lithography which exposes a surface to variable shapes in a raster scan. The beam column includes an electron (or ion) source that generates a charged particle beam, a transfer lens, an upper aperture, an upper deflector, a lower aperture, a lower deflector, magnetic deflection coils, and a beam objective lens. The beam is first shaped as a square in cross section by the upper aperture. The upper deflector changes the direction of the square shaped beam to pass through a specific portion of an opening defined in the lower aperture to shape the beam as desired. The lower aperture defines either a cross shaped opening or four L-shaped openings arranged as corners of a square. The combination of upper and lower apertures enable definition of exterior and interior corners as well as horizontal and vertical edges of a pattern, so that only one flash need be exposed in any one location on the surface. The lower deflector reverses any change in direction imposed by the upper deflector and further applies a retrograde scan to counteract a movement of the beam by the magnetic coils in a raster scan. The retrograde scan ensures that an exposure exposes an intended target area.
    • 用于光刻的电子束柱(或其他带电粒子束柱),其在光栅扫描中将表面暴露于可变形状。 光束柱包括产生带电粒子束的电子(或离子)源,转移透镜,上孔,上偏转器,下孔,下偏转器,磁偏转线圈和束物镜。 光束首先通过上部孔径成形为横截面的正方形。 上偏转器改变方形梁的方向,以通过限定在下孔中的开口的特定部分,以根据需要成形梁。 下孔限定十字形开口或布置成正方形角的四个L形开口。 上孔和下孔的组合使得能够定义外部和内部角部以及图案的水平和垂直边缘,使得仅一个闪光体需要暴露在表面上的任何一个位置。 下偏转器反转由上偏转器施加的方向上的任何变化,并进一步施加逆行扫描以抵消光栅在光栅扫描中由磁线圈移动。 逆行扫描确保曝光曝光预期的目标区域。