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41. 发明授权

US4866373A Superconducting current detecting circuit employing DC flux parametron circuit 失效
标题翻译：采用直流通量参数电路的超导电流检测电路
公开(公告)号：US4866373A
公开(公告)日：1989-09-12
申请号：US291338
申请日：1988-12-28
申请人： Yutaka Harada , Eiichi Goto , Ushio Kawabe , Nobuo Miyamoto , Hideaki Nakane , Mutsuko Hatano
发明人： Yutaka Harada , Eiichi Goto , Ushio Kawabe , Nobuo Miyamoto , Hideaki Nakane , Mutsuko Hatano
IPC分类号： G01R17/06 , G01R19/00 , G01R19/15 , G01R19/257
CPC分类号： G01R19/257 , G01R17/06 , G01R19/0092 , G01R19/15 , Y10S505/827 , Y10S505/845
摘要： A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.
摘要翻译：一种超导电流检测电路，包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路，从而产生与输入激励信号同步的脉冲，所述脉冲根据所述输入电流和所述参考电流之间的差异而变化，所述脉冲具有取决于所述差的极性的正值或负值，所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置对应于响应于脉冲极性的脉冲数，使得参考电流产生电路产生与输入电流一致的参考电流。

42. 发明授权

US08199269B2 Method for manufacturing thin film transistors 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08199269B2
公开(公告)日：2012-06-12
申请号：US12216445
申请日：2008-07-03
申请人： Takashi Hattori , Mutsuko Hatano
发明人： Takashi Hattori , Mutsuko Hatano
IPC分类号： G02F1/136 , G02F1/1333 , H01L21/00 , H01L21/469
CPC分类号： H01L27/1266 , G02F1/133305 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： A method for manufacturing a thin film transistor including a step of forming a polymer film (a) to a layer above a support substrate, a step of forming a semiconductor element above the polymer film (a), and a step of separating the support substrate from the polymer film (a) formed with the semiconductor element in which the polymer film (a) has a thickness of 1 μm or more and 30 μm or less, a transmittance of 80% or higher to a visible light at a wavelength of 400 nm or more and 800 nm or less, a 3 wt % loss temperature of 300° C. or higher, and a melting point of 280° C. or higher.
摘要翻译：一种制造薄膜晶体管的方法，包括在支撑基板上形成聚合物膜（a）的步骤，在聚合物膜（a）上方形成半导体元件的步骤，以及分离支撑基板从聚合物膜（a）的厚度为1μm以上且30μm以下的半导体元件形成的聚合物膜（a）的透射率为波长400的可见光的80％以上以上且800nm以下，3重量％的损失温度为300℃以上，熔点为280℃以上。

43. 发明申请

US20120068287A1 Highly Sensitive Photo-Sensing Element and Photo-Sensing Device Using the Same 有权
标题翻译：高灵敏感光元件和使用它的感光元件
公开(公告)号：US20120068287A1
公开(公告)日：2012-03-22
申请号：US13236338
申请日：2011-09-19
申请人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
发明人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
IPC分类号： H01L31/0224
CPC分类号： H01L27/1214 , G09G2360/14 , H01L31/1136
摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.
摘要翻译：根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。感光元件和传感器驱动电路都由多晶硅膜制成。作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 在第三电极13下方的区域15和16上，或者在区域15或16中的一个区域上设置位于更接近本征层（活性杂质的密度为1017cm-3或更低）的杂质层。在一边。

44. 发明授权

US07859016B2 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产工艺及生产设备
公开(公告)号：US07859016B2
公开(公告)日：2010-12-28
申请号：US12498692
申请日：2009-07-07
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L29/66
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
摘要翻译：提供一种使用薄膜半导体器件制造图像显示装置的方法，其包括在基板上形成多晶半导体薄膜。形成基本上带状的晶体，其通过沿着衬底扫描CW激光束而沿与CW激光束的扫描方向大致平行的方向使晶粒生长，从而将CW激光束照射到形成在基板上的多晶半导体薄膜。

45. 发明申请

US20100201929A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20100201929A1
公开(公告)日：2010-08-12
申请号：US12702850
申请日：2010-02-09
申请人： Naoya Okada , Mutsuko Hatano , Shinya Yamaguchi , Takashi Hattori
发明人： Naoya Okada , Mutsuko Hatano , Shinya Yamaguchi , Takashi Hattori
IPC分类号： G02F1/1333 , G02B27/00
CPC分类号： G02B1/14 , G02B1/105 , G02B1/16 , G02F1/133305 , G02F2201/38 , G02F2201/50 , G02F2201/503
摘要： Provided is a display device, including: a barrier layer formed of a plurality of material layers being laminated; and a first material layer and a second material layer that sandwich the barrier layer, in which: the first material layer, the plurality of material layers forming the barrier layer, and the second material layer have light refractive indexes that are set so as to sequentially change from the first material layer to the second material layer in one of decreasing order and increasing order; and the plurality of material layers forming the barrier layer include a high stress film and a low stress film which are alternately laminated on each other. Therefore, the display device of the present invention can achieve crack prevention, enhancement in adhesion between the respective layers and enhancement in barrier property, together with reducing a light reflectance of the barrier layer.
摘要翻译：提供一种显示装置，包括：层叠由多个材料层形成的阻挡层; 以及夹着所述阻挡层的第一材料层和第二材料层，其中，所述第一材料层，形成所述阻挡层的所述多个材料层和所述第二材料层具有光依次设定的折射率以递减的顺序从第一材料层改变为第二材料层; 并且形成阻挡层的多个材料层包括交替层叠在一起的高应力膜和低应力膜。因此，本发明的显示装置可以实现防止裂纹，增强各层之间的粘附性，并且可以提高阻隔性，同时降低阻挡层的光反射率。

46. 发明申请

US20090269892A1 THIN FILM SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM PRODUCTION PROCESS AND PRODUCTION APPARATUS 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产工艺及生产设备
公开(公告)号：US20090269892A1
公开(公告)日：2009-10-29
申请号：US12498692
申请日：2009-07-07
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L21/336 , H01L21/268
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
摘要翻译：提供一种使用薄膜半导体器件制造图像显示装置的方法，其包括在基板上形成多晶半导体薄膜。形成基本上带状的晶体，其通过沿着衬底扫描CW激光束而沿与CW激光束的扫描方向大致平行的方向使晶粒生长，从而将CW激光束照射到形成在基板上的多晶半导体薄膜。

47. 发明授权

US07556993B2 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产工艺及生产设备
公开(公告)号：US07556993B2
公开(公告)日：2009-07-07
申请号：US11589800
申请日：2006-10-31
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
摘要翻译：提供一种使用薄膜半导体器件制造图像显示装置的方法，其包括在基板上形成多晶半导体薄膜。形成基本上带状的晶体，其通过沿着衬底扫描CW激光束而沿与CW激光束的扫描方向大致平行的方向使晶粒生长，从而将CW激光束照射到形成在基板上的多晶半导体薄膜。

48. 发明授权

US07372110B2 Display with integral sound wave generation device 有权
标题翻译：具有积分声波发生装置的显示
公开(公告)号：US07372110B2
公开(公告)日：2008-05-13
申请号：US11771713
申请日：2007-06-29
申请人： Mutsuko Hatano
发明人： Mutsuko Hatano
IPC分类号： H01L49/00 , H01L29/786 , H04R23/00
CPC分类号： H01L27/12
摘要： A display housing a sound element and a driving circuit that may be built in on the same substrate as the display panel. Thin-film transistors PTFT constituting pixels and a sound wave generation device SPO1 having a laminated structure of a heat generation layer 700, a heat insulation layer 701 and a heat radiation layer 702 are formed on a thin-film transistor (TFT) substrate 500 on which polysilicon thin-film transistors PTFT are formed.
摘要翻译：一种显示器，其容纳可构建在与显示面板相同的基板上的声音元件和驱动电路。在薄膜晶体管（TFT）基板500上形成具有发热层700，隔热层701和散热层702的叠层结构的构成像素的薄膜晶体管PTFT和具有层叠结构的声波发生装置SPO 1 在其上形成多晶硅薄膜晶体管PTFT。

49. 发明申请

US20070262319A1 LCD with first and second circuit regions each with separately optimized transistor properties 有权
公开(公告)号：US20070262319A1
公开(公告)日：2007-11-15
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： H01L29/04
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

50. 发明申请

US20070105263A1 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus 有权
公开(公告)号：US20070105263A1
公开(公告)日：2007-05-10
申请号：US11589800
申请日：2006-10-31
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.

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