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    • 41. 发明授权
    • Thermal environment sensor with means to estimate the wind velocity
    • 热环境传感器具有估计风速的手段
    • US5044768A
    • 1991-09-03
    • US433443
    • 1989-11-09
    • Masahiro KobayashiNoboru KobayashiKazuhisa Shigemori
    • Masahiro KobayashiNoboru KobayashiKazuhisa Shigemori
    • G01W1/17G05D23/19
    • G05D23/19G01W1/17
    • A thermal environment sensor has a single temperature detector for detecting temperature and producing an output representative of the detected temperature, the temperature detector having, when heated by a predetermined constant power, a convective heat transfer coefficient giving it a wind velocity dependent temperature drop characteristic in close conformity with the wind velocity dependence of the effective temperature drop felt by a human body. A heater is provided for heating the temperature detector, and an electric power supply is connected to the heater for supplying the heater with a constant electric power corresponding to the predetermined constant power, and a temperature estimating circuit is connected to the temperature detector for correcting the output of the temperature detector by a predetermined constant temperature difference for thereby obtaining the effective temperature felt by a human body.
    • 热环境传感器具有用于检测温度并产生代表检测温度的输出的单个温度检测器,当以预定的恒定功率加热时,温度检测器具有给出其与风速相关的温度降低特性的对流传热系数 与人体感觉到的有效温度下降的风速依赖性密切相关。 提供加热器用于加热温度检测器,并且电源连接到加热器,用于向加热器提供对应于预定恒定功率的恒定电力,温度估计电路连接到温度检测器,用于校正 输出温度检测器预定的恒定温差,从而获得人体感觉到的有效温度。
    • 42. 发明授权
    • Avalanche multiplication photodiode having a buried structure
    • 具有掩埋结构的雪崩倍增光电二极管
    • US4656494A
    • 1987-04-07
    • US738724
    • 1985-05-29
    • Masahiro KobayashiSusumu YamazakiTakashi MikawaKazuo NakajimaTakao Kaneda
    • Masahiro KobayashiSusumu YamazakiTakashi MikawaKazuo NakajimaTakao Kaneda
    • H01L31/10H01L31/0352H01L31/107H01L27/14
    • H01L31/1075H01L31/035281Y02E10/50
    • A buried structure avalanche multiplication photodiode (APD) is provided with a surface level difference between the multiplication region and guard ring region. The APD has a so-called separated absorption and multiplication region structure comprising an n-InGaAs light absorbing layer and an n-InP multiplication layer. The surface level difference is provided by selective growth of the layer in which the guard ring is formed or selective removal of the layer over the multiplication region. In the APD, the pn junction is level throughout the multiplication region and guard ring region or is made farther apart from the light absorbing layer in the guard ring region than in the multiplication region, and a significant reduction of dark current due to tunneling current in the InGaAs layer and/or InGaAsP layer is obtained. Moreover, the breakdown voltage difference of the pn junction in the multiplication region and the guard ring region has also been increased.
    • 掩埋结构雪崩倍增光电二极管(APD)在乘法区域和保护环区域之间具有表面电平差。 APD具有包括n-InGaAs光吸收层和n-InP倍增层的所谓的分离的吸收和乘法区域结构。 表面电平差通过形成保护环的层的选择性生长或乘法区域上的层的选择性去除来提供。 在APD中,pn结在整个乘法区域和保护环区域中是平坦的,或者在保护环区域中比在乘法区域中的光吸收层更远,并且由于隧道电流引起的暗电流显着降低 获得InGaAs层和/或InGaAsP层。 此外,倍增区域和保护环区域中的pn结的击穿电压差也增加。
    • 50. 发明授权
    • Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus
    • 固态图像拾取装置和使用固态图像拾取装置的图像拾取系统
    • US08860862B2
    • 2014-10-14
    • US13473442
    • 2012-05-16
    • Masahiro KobayashiYuichiro YamashitaYusuke Onuki
    • Masahiro KobayashiYuichiro YamashitaYusuke Onuki
    • H04N3/14H04N9/04H01L27/146
    • H01L27/14623H01L27/14603H01L27/14609H01L27/14612H01L27/14614H01L27/14643H04N5/374
    • A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.
    • 固态摄像装置包括全部设置在半导体衬底上的光电转换单元,电荷存储单元和浮动扩散单元。 固体摄像装置还包括设置在半导体衬底上并在光电转换单元和电荷存储单元之间延伸的第一栅电极,以及设置在半导体衬底上并在电荷存储单元和浮置电极之间延伸的第二栅电极 扩散单元 固体摄像装置还包括遮光构件,其包括第一部分和第二部分,其中第一部分设置在电荷存储单元上方,并且至少在第一栅电极或第二栅极上,第二部分 部分设置在第一栅电极和第二栅电极之间,使得第二部分从第一部分朝向半导体衬底的表面延伸。