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41. 发明申请

US20130037246A1 ORIGINAL PLATE MATERIAL FOR HEAT-EXCHANGING PLATE, AND METHOD FOR FABRICATING ORIGINAL PLATE MATERIAL FOR HEAT-EXCHANGING PLATE 有权
标题翻译：热交换板用原板材及其加热板原料板材料的制造方法
公开(公告)号：US20130037246A1
公开(公告)日：2013-02-14
申请号：US13643715
申请日：2011-04-27
申请人： Yasuyuki Fujii , Akio Okamoto , Yoshio Itsumi , Akihisa Fujita
发明人： Yasuyuki Fujii , Akio Okamoto , Yoshio Itsumi , Akihisa Fujita
IPC分类号： F28F3/04 , B21D53/02 , B21D22/02
CPC分类号： B21D13/04 , B21D53/02 , B21D53/04 , F28F3/04 , F28F21/08 , Y10T29/4935
摘要： Provided is an original plate material for a heat-exchanging plate fabricated by press working, and also provided is a method for fabricating the original plate material. An original plate material (2) for a heat-exchanging plate (4) is a flat plate material (1) made of titanium on the surface of which convex parts and concave parts are formed, and the heat-exchanging plate (4) is then fabricated by press working the original plate material (2). The convex parts (5) and the concave parts (6) are formed in a manner such that the shape parameter defined by (Rz×L/P) is 12 μm or less, where Rz (μm) denotes the height of the convex parts (5), L (μm) denotes the width of the concave parts (6), and P (μm) denotes the pitch between neighboring convex parts (5).
摘要翻译：提供了一种用于通过冲压加工制造的热交换板的原始板材，并且还提供了用于制造原始板材的方法。用于热交换板（4）的原板材（2）是在其上形成有凸部和凹部的表面上由钛制成的平板材料（1），并且热交换板然后通过冲压加工原始板材（2）制成。凸部（5）和凹部（6）以（Rz×L / P）所定义的形状参数为12μm以下的方式形成，其中，Rz（μm）表示凸部（5）中，L（μm）表示凹部（6）的宽度，P（μm）表示相邻的凸部（5）之间的间距。

42. 发明申请

US20090121375A1 Method for multilayer molding of thermoplastic resins and multilayer molding apparatus 审中-公开
标题翻译：热塑性树脂多层成型方法及多层成型装置
公开(公告)号：US20090121375A1
公开(公告)日：2009-05-14
申请号：US11990780
申请日：2006-08-23
申请人： Akio Okamoto , Kazuaki Miyamoto
发明人： Akio Okamoto , Kazuaki Miyamoto
IPC分类号： B29C67/20
CPC分类号： B29C44/0461 , B29C44/086
摘要： A multilayer-molding method includes the steps of mixing at least one thermoplastic resin selected from a plurality of types of thermoplastic resins with a bubble-nucleating agent and a foaming gas, injecting the plurality of types of thermoplastic resins into a mold cavity such that the thermoplastic resins are layered in the mold cavity, and then, after increasing the volume of the mold cavity, foaming the at least one thermoplastic resin mixed with the bubble-nucleating agent and the foaming gas. The multilayer-molding method is characterized in that the foaming gas is supplied at a pressure of 0.1 MPa or more but less than 1.0 MPa to at least one injection-molding machine selected from a plurality of injection-molding machines, and that the thermoplastic resin plasticized in the injection-molding machine is mixed with the foaming gas.
摘要翻译：多层成型方法包括将选自多种热塑性树脂的至少一种热塑性树脂与气泡成核剂和发泡气体混合的步骤，将多种类型的热塑性树脂注入模腔，使得将热塑性树脂层叠在模腔中，然后在增加模腔的体积之后，使与泡沫成核剂和发泡气体混合的至少一种热塑性树脂发泡。多层成型方法的特征在于，将发泡气体以0.1MPa以上且小于1.0MPa的压力供给到从多台注塑机中选择的至少一种注射成型机，热塑性树脂在注射成型机中增塑的发泡气体与发泡气体混合。

43. 发明申请

US20080290543A1 Method for Injection Expansion Molding of Thermoplastic Resin 有权
标题翻译：热塑性树脂注射膨胀成型方法
公开(公告)号：US20080290543A1
公开(公告)日：2008-11-27
申请号：US11579414
申请日：2005-07-21
申请人： Akio Okamoto , Kazuaki Miyamoto
发明人： Akio Okamoto , Kazuaki Miyamoto
IPC分类号： B29C45/00 , B29C45/70
CPC分类号： B29C44/422 , B29C44/586
摘要： An injection-foaming method for a thermoplastic resin comprising using an injection unit 30 provided with a hopper 35, a plasticizing cylinder 31 and a screw 32, and a mold 10 having a mold cavity 10a of changeable capacity; filling the mold cavity 10a with a foaming-agent-containing melted resin injected from the injection unit 30; and then enlarging the mold cavity 10a for allowing the foaming-agent-containing melted resin to expand, wherein inclusion of a foaming agent into a thermoplastic resin is done by using a mixture of a foam nucleating agent and a foaming gas as foaming agent, feeding the mixture to hopper 35 or plasticizing cylinder 31 and screw 32 of injection unit 30 at a pressure of 0.1 MPa or more and less than 1.0 MPa, and contacting the mixture with a pre- or post-plasticized thermoplastic resin present in hopper 35 or plasticizing cylinder 31 and screw 32.
摘要翻译：一种热塑性树脂的注射发泡方法，包括使用设有料斗35，塑化筒31和螺杆32的注射单元30和具有可变容量的模腔10a的模具10。用从注射单元30注入的含发泡剂的熔融树脂填充模腔10a; 然后扩大模腔10a，使含发泡剂的熔融树脂膨胀，其中通过使用泡沫成核剂和发泡气体的混合物作为发泡剂，将发泡剂包含在热塑性树脂中进行，进料在0.1MPa以上且小于1.0MPa的压力下将混合物与料斗35或塑化筒31和注射单元30的螺杆32接触，并将混合物与存在于料斗35中的预塑化后塑化树脂或增塑剂气缸31和螺杆32。

44. 发明授权

US07014860B1 Hyaluronic acid gel, process for producing the same, and medical material containing the same 有权
标题翻译：透明质酸凝胶，其制造方法以及含有该透明质酸凝胶的医用材料
公开(公告)号：US07014860B1
公开(公告)日：2006-03-21
申请号：US10182467
申请日：2000-02-03
申请人： Masatoshi Kawata , Akio Okamoto , Yoshiaki Miyata , Kazuhiro Ohshima , Osamu Yamamoto , Teruzou Miyoshi , Kazuhiko Arai , Hironoshin Kitagawa , Toshihiko Umeda , Hiroshi Kaneko
发明人： Masatoshi Kawata , Akio Okamoto , Yoshiaki Miyata , Kazuhiro Ohshima , Osamu Yamamoto , Teruzou Miyoshi , Kazuhiko Arai , Hironoshin Kitagawa , Toshihiko Umeda , Hiroshi Kaneko
IPC分类号： A61F13/00
CPC分类号： A61L24/0031 , A61L24/08 , A61L27/20 , A61L27/52 , A61L31/042 , A61L31/145 , C08B37/0072 , C08L5/08
摘要： Production of a hyaluronic acid gel, which comprises keeping hyaluronic acid in water at a hyaluronic acid concentration of at least 5 wt % in the presence of an acid component in an amount at least equimolar with the carboxyl groups in the hyaluronic acid.
摘要翻译：透明质酸凝胶的制备，其包括在透明质酸浓度为至少5重量％的水中，在酸组分存在下，与透明质酸中的羧基至少等摩尔的量保持水中的透明质酸。

45. 发明授权

US06387413B1 Hyaluronic acid gel, a method of its production and medical material containing it 有权
标题翻译：透明质酸凝胶，其生产方法和含有它的医用材料
公开(公告)号：US06387413B1
公开(公告)日：2002-05-14
申请号：US09463993
申请日：2000-06-26
申请人： Yoshiaki Miyata , Akio Okamoto , Masatoshi Kawata , Kazuhiro Oshima , Masamichi Hashimoto , Kazuhiko Arai , Tomio Sawada
发明人： Yoshiaki Miyata , Akio Okamoto , Masatoshi Kawata , Kazuhiro Oshima , Masamichi Hashimoto , Kazuhiko Arai , Tomio Sawada
IPC分类号： A61K3534
CPC分类号： C08L5/08 , A61L15/28 , A61L27/20 , A61L31/042 , C08B37/0072 , Y10S514/944
摘要： A gel made of hyaluronic acid alone which is hardly soluble in a neutral aqueous solution and which keeps its shape for at least one day in a neutral aqueous solution at 25° C.
摘要翻译：由透明质酸单独制成的凝胶，其几乎不溶于中性水溶液，并且在25℃的中性水溶液中保持至少一天的形状。

46. 发明授权

US5513610A Idle speed control device for an engine 失效
标题翻译：怠速发动机调速装置
公开(公告)号：US5513610A
公开(公告)日：1996-05-07
申请号：US423445
申请日：1995-04-19
申请人： Akio Okamoto , Hirohisa Kishi
发明人： Akio Okamoto , Hirohisa Kishi
IPC分类号： F02D11/10 , F02D31/00 , F02D41/22 , F02M3/00
CPC分类号： F02D31/005 , F02D41/221 , F02D2011/102 , F02D2011/103
摘要： The idle speed control device according to the present invention controls a two-solenoid rotary type idle speed control valve properly even when one of the solenoids fails. When one of the solenoids fails, the device calculates the amount of bypass air from the amount of inlet air and the degree of opening of the throttle valve, and estimates the degree of opening of the idle speed control valve. If the degree of opening of the bypass valve is larger than that of the neutral valve position, the device sets the duty ratio of the control signal for driving the idle speed control valve at 0%, and if the degree of opening of the idle speed control valve is less than that of the neutral valve position, the device sets the duty ratio of the control signal at 100%. By this control, the two-solenoid rotary type idle speed control valve is maintained at neutral valve position without determining the type of the failure of the solenoids precisely.
摘要翻译：根据本发明的怠速控制装置即使当其中一个螺线管故障时也适当地控制双电磁旋转怠速控制阀。当其中一个螺线管故障时，该装置根据入口空气量和节流阀的开度计算旁路空气量，并估计怠速控制阀的开度。如果旁通阀的开度大于中性阀位置的开度，则将该怠速控制阀的驱动控制信号的占空比设定为0％，如果怠速的开度控制阀小于中性阀位置时，设备将控制信号的占空比设置为100％。通过该控制，双电磁旋转式怠速转速控制阀保持在中性阀位置，而不会精确地确定螺线管的故障类型。

47. 发明授权

US5248630A Thin film silicon semiconductor device and process for producing thereof 失效
标题翻译：薄膜硅半导体器件及其制造方法
公开(公告)号：US5248630A
公开(公告)日：1993-09-28
申请号：US857944
申请日：1992-03-26
申请人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
发明人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
IPC分类号： H01L21/205 , H01L21/321 , H01L29/04 , H01L29/786
CPC分类号： H01L29/04 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/321 , H01L29/78675 , Y10S438/909
摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
摘要翻译：根据本发明的设置在基板上的薄膜硅半导体器件包括晶格常数小于单晶晶格和小晶粒尺寸的薄多晶硅薄膜。该薄多晶硅膜可以通过溅射沉积法将薄的非晶硅膜沉积在具有3.5Pa或更低的压力的惰性气体中并在10秒或更短的时间内退火薄的非晶硅膜来获得，多结晶。包括这种具有小晶格常数的薄多晶硅膜的薄膜硅半导体器件具有包括100cm 2 / Vxs或更高的载流子迁移率的优异特性。

48. 发明授权

US5132754A Thin film silicon semiconductor device and process for producing thereof 失效
标题翻译：薄膜硅半导体器件及其制造方法
公开(公告)号：US5132754A
公开(公告)日：1992-07-21
申请号：US222966
申请日：1988-07-21
申请人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
发明人： Tadashi Serikawa , Seiichi Shirai , Akio Okamoto , Shirou Suyama
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/321 , H01L21/324 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/78 , H01L29/786
CPC分类号： H01L29/04 , H01L21/02381 , H01L21/02422 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/02609 , H01L21/0262 , H01L21/321 , H01L29/78675
摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.

49. 发明授权

US5039476A Method for production of powder metallurgy alloy 失效
标题翻译：粉末冶金合金的生产方法
公开(公告)号：US5039476A
公开(公告)日：1991-08-13
申请号：US554531
申请日：1990-07-19
申请人： Mitsuru Adachi , Akio Okamoto , Hideki Iwai , Yoshiharu Waku
发明人： Mitsuru Adachi , Akio Okamoto , Hideki Iwai , Yoshiharu Waku
IPC分类号： B22F9/04 , C22C1/04 , C22C1/10
CPC分类号： B22F9/04 , C22C1/0416 , C22C1/1084
摘要： A method for the production of a metallic powder molding material is disclosed which comprises a step of imparting mechanical energy due to at least one of such physical actions as vibration, pulverization, attrition, rolling, shocks, agitation, and mixing a metallic particles in a vessel whose interior is held under vacuumized atmosphere or an atmosphere of inert gas thereby enabling the metallic particles to contact each other and acquire improvement in surface quality and a step of hot molding the metallic particles thereby producing a molding material.

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