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41. 发明授权

US5654116A Hologram 失效
标题翻译：全息图
公开(公告)号：US5654116A
公开(公告)日：1997-08-05
申请号：US314501
申请日：1994-09-28
申请人： Tetsuya Kato , Toshiki Saburi , Naoyuki Kawazoe , Yasuhiro Mizutani , Tomonori Ishikawa
发明人： Tetsuya Kato , Toshiki Saburi , Naoyuki Kawazoe , Yasuhiro Mizutani , Tomonori Ishikawa
IPC分类号： G03H1/02
CPC分类号： G03H1/0256 , G03H1/0486 , G03H2223/18 , G03H2240/54 , G03H2240/55 , G03H2250/37
摘要： A hologram comprising a diffraction grating film with an interference fringe recorded thereon, a substrate provided on one side of said diffraction grating film, and cover plates provided on the surfaces of the aforesaid diffraction grating film by use of an adhesive, wherein the lateral face portion of the aforesaid hologram is covered with a water repellent layer, or a hologram comprising a diffraction grating film with an interference fringe recorded thereon and a substrate provided on one side of said diffraction grating film, the surface of the aforesaid diffraction grating film being covered with an adhesive, wherein the aforesaid adhesive contains an epoxy resin mixture consisting of an alicyclic epoxy and novolak type epoxy and an alicyclic acid anhydride type curing agent, a chief ingredient composed of an aromatic epoxy resin(s) and a curing agent comprising a mixture of an alicyclic amine and an aliphatic amine, or a chief ingredient composed of an aromatic epoxy resin(s) and a curing agent comprising a mixture of an alicyclic amine and an aromatic amine.
摘要翻译：一种全息图，包括其上记录有干涉条纹的衍射光栅膜，设置在所述衍射光栅膜的一侧上的基板和通过使用粘合剂设置在上述衍射光栅膜的表面上的盖板，其中侧面部分上述全息图被覆盖有防水层，或包括其上记录有干涉条纹的衍射光栅膜和设置在所述衍射光栅膜一侧的基板的全息图，上述衍射光栅膜的表面被覆盖粘合剂，其中所述粘合剂包含由脂环族环氧树脂和酚醛清漆型环氧树脂组成的环氧树脂混合物和脂环酸酐型固化剂，由芳族环氧树脂组成的主要成分和包含以下物质的混合物的固化剂：脂环胺和脂族胺，或由芳族环氧树脂a组成的主要成分 d包含脂环胺和芳族胺的混合物的固化剂。

42. 发明授权

US5048941A Surgical miscroscope with a modular stand 失效
标题翻译：具有模块化支架的外科手术镜
公开(公告)号：US5048941A
公开(公告)日：1991-09-17
申请号：US417438
申请日：1989-10-05
申请人： Masami Hamada , Hiroshi Fujiwara , Kosaku Tsuboshima , Masahiko Kinukawa , Toshiyuki Tsunoda , Takashi Nagano , Kazyuki Minami , Shigeo Tokunaga , Masanori Kaneda , Tomonori Ishikawa
发明人： Masami Hamada , Hiroshi Fujiwara , Kosaku Tsuboshima , Masahiko Kinukawa , Toshiyuki Tsunoda , Takashi Nagano , Kazyuki Minami , Shigeo Tokunaga , Masanori Kaneda , Tomonori Ishikawa
IPC分类号： G02B21/24 , A61B19/00 , G02B21/00
CPC分类号： G02B21/0012 , Y10T307/50
摘要： The surgical microscope comprises a stand, an arm movably attached to said stand for sustaining a microscope body, an electric control equipment divided into a plural number of units removably piled up on said stand and a foot switch unit to be used for executing various types of functions. Accommodated in each unit are a function control means having a single specific function or plural specific functions different from those of the other units and an independent power source means connected to said function control means in a relation of 1:1 or in a different combination. The surgical microscope can be designed compact as a whole, has high operability and assures high security during operation. Should a function be lost due to troubles during operation, the surgical microscope prevents the other functions from being influenced by the troubles and allows to speedily restore the lost function.
摘要翻译：手术显微镜包括支架，可移动地附接到所述支架上用于维持显微镜主体的臂，分割成可移除地堆叠在所述支架上的多个单元的电控设备和用于执行各种类型的脚踏开关单元功能。在每个单元中容纳有具有与其它单元不同的单个特定功能或多个特定功能的功能控制装置和以1：1或不同组合连接到所述功能控制装置的独立电源装置。手术显微镜整体设计紧凑，操作性好，操作安全性高。如果由于操作中的麻烦而导致功能丧失，则手术显微镜防止其他功能受到麻烦的影响，并且能够快速恢复丢失的功能。

43. 发明授权

US5023675A Semiconductor device 失效
公开(公告)号：US5023675A
公开(公告)日：1991-06-11
申请号：US416944
申请日：1989-10-04
申请人： Tomonori Ishikawa
发明人： Tomonori Ishikawa
IPC分类号： H01L29/812 , H01L21/306 , H01L21/335 , H01L21/338 , H01L21/8252 , H01L29/205 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/30621 , H01L21/8252 , H01L29/205 , H01L29/7783
摘要： A semiconductor device having a heterojunction and utilizing a two-dimensional electron gas formed at said the heterojunction comprises a substrate of a semi-insulating material, a first semiconductor layer of undoped indium gallium arsenide formed on the substrate, a second semiconductor layer of n-type indium aluminium arsenide formed on the first semiconductor layer and defining the heterojunction between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer including an exposed region defining an exposed top surface, a third semiconductor layer of n-type gallium arsenide antimonide formed on the second semiconductor layer and having a window defined therein so as to expose the top surface of the exposed top surface region, a gate electrode formed in self-alignment with the window and in contact with the exposed top surface region of the second semiconductor layer, and ohmic electrodes formed on the cap layer in ohmic contact therewith.

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