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41. 发明授权

US09121094B2 Sputtering method and sputtering apparatus 有权
标题翻译：溅射方法和溅射装置
公开(公告)号：US09121094B2
公开(公告)日：2015-09-01
申请号：US12072089
申请日：2008-02-22
申请人： Kaoru Maekawa , Hiroyuki Nagai , Tatsuo Hatano , Takashi Sakuma
发明人： Kaoru Maekawa , Hiroyuki Nagai , Tatsuo Hatano , Takashi Sakuma
IPC分类号： C23C14/34 , C23C14/18 , C23C14/02 , C23C14/54 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： C23C14/185 , C23C14/027 , C23C14/345 , C23C14/544 , H01L21/2855 , H01L21/76844 , H01L21/76855 , H01L21/76873 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.
摘要翻译：本发明的目的是提供一种能够在一个处理容器中通过溅射在物体上容易地形成含有添加金属的合金层以在厚度方向上提供浓度梯度的技术。也就是说，本发明可以形成具有所需浓度的膜，并且包括第一成膜工艺和第二成膜工艺，其改变处理容器中的压力和电功率中的至少一个，使得它们不同从第一成膜工序，使添加剂金属的浓度与第一合金膜的添加金属的浓度不同。

42. 发明申请

US20080230375A1 Sputtering method and sputtering apparatus 有权
标题翻译：溅射方法和溅射装置
公开(公告)号：US20080230375A1
公开(公告)日：2008-09-25
申请号：US12072089
申请日：2008-02-22
申请人： Kaoru Maekawa , Hiroyuki Nagai , Tatsuo Hatano , Takashi Sakuma
发明人： Kaoru Maekawa , Hiroyuki Nagai , Tatsuo Hatano , Takashi Sakuma
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： C23C14/185 , C23C14/027 , C23C14/345 , C23C14/544 , H01L21/2855 , H01L21/76844 , H01L21/76855 , H01L21/76873 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.
摘要翻译：本发明的目的是提供一种能够在一个处理容器中通过溅射在物体上容易地形成含有添加金属的合金层以在厚度方向上提供浓度梯度的技术。也就是说，本发明可以形成具有所需浓度的膜，并且包括第一成膜工艺和第二成膜工艺，其改变处理容器中的压力和电功率中的至少一个，使得它们不同从第一成膜工序，使添加剂金属的浓度与第一合金膜的添加金属的浓度不同。

43. 发明授权

US08129271B2 Film forming method, film forming apparatus and storage medium 失效
标题翻译：成膜方法，成膜装置和储存介质
公开(公告)号：US08129271B2
公开(公告)日：2012-03-06
申请号：US12374216
申请日：2007-07-17
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.
摘要翻译：一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸汽和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

44. 发明授权

US6126994A Liquid material supply apparatus and method 失效
标题翻译：液体材料供应装置和方法
公开(公告)号：US6126994A
公开(公告)日：2000-10-03
申请号：US907007
申请日：1997-08-06
申请人： Seishi Murakami , Tatsuo Hatano
发明人： Seishi Murakami , Tatsuo Hatano
IPC分类号： H01L21/205 , C23C16/00 , C23C16/44 , C23C16/448 , H01L21/203
CPC分类号： C23C16/4481 , Y10S427/101
摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.
摘要翻译：一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。

45. 发明授权

US5690743A Liquid material supply apparatus and method 失效
标题翻译：液体材料供应装置和方法
公开(公告)号：US5690743A
公开(公告)日：1997-11-25
申请号：US496130
申请日：1995-06-27
申请人： Seishi Murakami , Tatsuo Hatano
发明人： Seishi Murakami , Tatsuo Hatano
IPC分类号： H01L21/205 , C23C16/00 , C23C16/44 , C23C16/448 , H01L21/203
CPC分类号： C23C16/4481 , Y10S427/101
摘要： An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.
摘要翻译：一种用于将沉积的低蒸气压液体材料供给到沉积室的装置，其中所述低蒸气压液体材料通过压力气体从压力通道被推出到压力液体供应通道; 低蒸气压液体材料的流量由流量控制单元控制，低蒸气压液体的流量被供给到蒸发器中，蒸发成蒸气; 并且通过设置有用于防止蒸气再液化的加热装置的蒸气供给通道将蒸汽供给到沉积室，从而稳定且准确地供给用于沉积的液体材料。

46. 发明申请

US20050233079A1 Film formation method 有权
标题翻译：成膜方法
公开(公告)号：US20050233079A1
公开(公告)日：2005-10-20
申请号：US11155575
申请日：2005-06-20
申请人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
发明人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
IPC分类号： C23C16/18 , C23C16/02 , C23C16/16 , C23C16/455 , H01L21/28 , H01L21/285 , C23C16/00 , H05H1/24
CPC分类号： C23C16/455 , C23C16/16 , H01L21/28556
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.
摘要翻译：公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

47. 发明授权

US5989345A Process-gas supply apparatus 失效
标题翻译：过程气体供应装置
公开(公告)号：US5989345A
公开(公告)日：1999-11-23
申请号：US069987
申请日：1998-04-30
申请人： Tatsuo Hatano
发明人： Tatsuo Hatano
IPC分类号： C23C14/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/52 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/4485 , C23C16/45561 , C23C16/52
摘要： A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising a process-gas source for supplying a process gas, a carrier gas source filled with a carrier gas, at least one gas storing section having a predetermined volume and to be filled with the process gas, a carrier-gas introducing pipe connecting the carrier gas source to the process chamber to introduce the carrier gas from the carrier gas source to the process chamber, a process-gas releasing pipe connected to the process-gas source, a process-gas filling circuit having at least one pipe which connects the at least one gas storing section to the process-gas releasing pipe and is provided with at least one open/shut valve, a process gas releasing circuit having at least one pipe which connects the gas storing section to the carrier-gas introducing pipe and is provided with at least one open/shut valve, a controlling section for controlling not only a communication state between the process-gas releasing pipe and the gas storing section but also a communication state between the carrier-gas introducing pipe and the gas storing section, by switchover of the open/shut valves attached to the process-gas filling circuit and the process gas releasing circuit.
摘要翻译：一种处理气体供应装置，用于向处理室提供处理气体，其中使用处理气体的预定处理被施加到其中的物体，其包括用于提供处理气体的处理气体源，填充有载气源具有载气，至少一个具有预定体积的气体储存部分并且被处理气体填充;载气引入管，其将载气源连接到处理室，以将载气从载气源引入到处理室，连接到处理气体源的处理气体释放管，处理气体填充回路，其具有将至少一个气体存储部分连接到处理气体释放管的至少一个管道，并且设置在至少一个打开/关闭阀，一个工艺气体释放回路，其具有至少一个管道，该管道将气体存储部分连接到载气引入管道，并且设有至少一个开/关阀 e，控制部分，用于不仅控制处理气体释放管和气体存储部之间的连通状态，而且还通过开/关阀的切换来控制载气导入管和气体存储部之间的连通状态连接到处理气体填充回路和处理气体释放回路。

48. 发明授权

US5963834A Method for forming a CVD film 失效
标题翻译： CVD膜的形成方法
公开(公告)号：US5963834A
公开(公告)日：1999-10-05
申请号：US992178
申请日：1997-12-17
申请人： Tatsuo Hatano , Seishi Murakami , Keishi Akiba , Takaya Shimizu
发明人： Tatsuo Hatano , Seishi Murakami , Keishi Akiba , Takaya Shimizu
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/44
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4408 , C23C16/45561 , C23C16/45574 , Y10S438/905
摘要： A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.
摘要翻译：一种形成CVD膜的方法，包括以下步骤：将待处理的物体加载到处理室中，并将物体定位在处理室中的支撑基座上，将物体定位在处理室中，引入处理气体从对应的气体供给源通过相应的气体导入管道进入处理室，并且通过化学气相沉积法在处理室中的物体上形成膜，在将物体形成在物体上之后，将物体从处理室中卸下，在从处理室卸载物体之后，对处理室内部进行干洗，并且在干燥处理室内部之后，经由相应的气体导入管将惰性气体引入到室中以清除作为气体导入管中的残留物和室内。

49. 发明授权

US5704214A Apparatus for removing tramp materials and method therefor 失效
标题翻译：用于除去杂质的装置及其方法
公开(公告)号：US5704214A
公开(公告)日：1998-01-06
申请号：US634164
申请日：1996-04-18
申请人： Yuichiro Fujikawa , Seishi Murakami , Tatsuo Hatano
发明人： Yuichiro Fujikawa , Seishi Murakami , Tatsuo Hatano
IPC分类号： B01D53/34 , B01D8/00 , B01D53/58 , B01D53/72 , B01J3/00 , B01J3/02 , C23C16/44 , F28F3/02 , H01L21/205 , H01L21/285
CPC分类号： B01D8/00 , C23C16/4412 , F28F3/02 , Y02C20/30 , Y10S417/901
摘要： A trap body is removably attached in the housing inserted in that portion of the exhaust passage which is situated on the upstream side of a vacuum pump, and has cooling fins for cooling the tramp materials in the exhaust gas brought into contact with the cooling means, thereby liquefying the tramp materials. Therefore, the tramp materials, such as unaffected process gases, products of reaction, etc., contained in the exhaust gas flowing through the exhaust passage, are cooled and liquefied when they are touched by the trap body cooled by the cooling unit, and adhere to the surface of the trap body. Thus, the tramp materials in the exhaust gas can be removed lest they damage the vacuum pump on the downstream side or close up the exhaust passage.
摘要翻译：捕集体可拆卸地安装在插入在位于真空泵的上游侧的排气通道的该部分中的壳体中，并且具有用于冷却与冷却装置接触的废气中的垃圾材料的冷却片，从而液化流质物料。因此，流经排气通路的排气中含有的未受影响的处理气体，反应产物等的流质物质被被冷却单元冷却的捕集体接触时被冷却和液化，并粘附到陷阱体的表面。因此，废气中的垃圾物质可以被去除，以免损坏下游侧的真空泵或关闭排气通道。

50. 发明授权

US08133811B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium 有权
标题翻译：半导体器件制造方法，半导体器件制造装置，计算机程序和存储介质
公开(公告)号：US08133811B2
公开(公告)日：2012-03-13
申请号：US12374228
申请日：2007-06-15
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/18 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76867 , H01L21/76877
摘要： A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.
摘要翻译：制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。涂覆有由氧化倾向高的金属形成的阻挡金属层（基膜）13的基板（晶片W）如钛，被放置在处理室中。在开始供给水蒸气之后，供给包含铜有机化合物（例如Cu（hfac）TMVS）的原料气体，并且在阻挡金属层13的表面上形成铜膜于是氧化物层13a由水蒸汽形成。然后，对晶片W进行热处理，将氧化物层13a转换成构成阻挡金属层13的金属和铜的合金层13b。

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