专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20100243868A1 METHOD AND APPARATUS OF IMPROVING EFFICIENCY OF AN IMAGE SENSOR 有权
标题翻译：提高图像传感器效率的方法和装置
公开(公告)号：US20100243868A1
公开(公告)日：2010-09-30
申请号：US12415580
申请日：2009-03-31
申请人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
发明人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L31/0232 , B32B37/02
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的装置基板。器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。图像传感器还包括形成在器件衬底的前侧上的第一层。第一层具有第一折射率和第一折射率的函数的第一厚度。图像传感器还具有形成在第一层上的第二层。第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。

42. 发明申请

US20100181283A1 DUAL METAL FOR A BACKSIDE PACKAGE OF BACKSIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：用于背面照明图像传感器的背面包装的双金属
公开(公告)号：US20100181283A1
公开(公告)日：2010-07-22
申请号：US12356968
申请日：2009-01-21
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
IPC分类号： B44C1/22
CPC分类号： H01L27/14636 , H01L24/82 , H01L27/14632 , H01L27/1464 , H01L27/14687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/04941 , H01L2924/10329 , H01L2924/10336 , H01L2924/14 , H01L2924/30105
摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.
摘要翻译：公开了一种制造具有改进的接合能力的半导体器件的方法。该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和第二导电层。

43. 发明申请

US20100090304A1 BONDING PROCESS FOR CMOS IMAGE SENSOR 有权
标题翻译： CMOS图像传感器的结合工艺
公开(公告)号：US20100090304A1
公开(公告)日：2010-04-15
申请号：US12626296
申请日：2009-11-25
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
IPC分类号： H01L31/0232 , H01L31/18 , H01L21/60
CPC分类号： H01L21/76898 , H01L23/3171 , H01L23/481 , H01L24/12 , H01L27/14618 , H01L27/14683 , H01L2224/05001 , H01L2224/05009 , H01L2224/05548 , H01L2224/0557 , H01L2924/01019 , H01L2924/01068 , H01L2924/01078 , H01L2924/04941 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.
摘要翻译：本公开提供了制造集成电路（IC）的方法。该方法包括在基板的正面上形成电子装置; 在所述基板的前侧形成顶部金属焊盘，所述顶部金属焊盘联接到所述电气装置; 在所述基板的正面上形成钝化层，所述顶部金属焊盘嵌入所述钝化层中; 在钝化层中形成开口，暴露顶部金属垫; 在衬底中形成深沟槽; 在深沟槽和开口中填充导电材料，导致深沟槽中的贯穿晶片通孔（TWV）特征和开口中的焊盘TWV特征，其中顶部金属焊盘通过该沟槽连接到TWV特征 pad-TWV功能; 以及施加抛光工艺以去除过量的导电材料，形成基本平坦的表面。

44. 发明授权

US09455288B2 Image sensor structure to reduce cross-talk and improve quantum efficiency 有权
标题翻译：图像传感器结构，减少串扰，提高量子效率
公开(公告)号：US09455288B2
公开(公告)日：2016-09-27
申请号：US13476785
申请日：2012-05-21
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
摘要翻译：半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

45. 发明授权

US09224770B2 Image sensor device and method 有权
标题翻译：图像传感器装置及方法
公开(公告)号：US09224770B2
公开(公告)日：2015-12-29
申请号：US13457301
申请日：2012-04-26
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Shuang-Ji Tsai
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Shuang-Ji Tsai
IPC分类号： H01L31/0203 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/14609 , H01L27/14621 , H01L27/14629 , H01L27/1464 , H01L27/14689
摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.
摘要翻译：提供了一种用于减少感光二极管之间串扰的系统和方法。在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

46. 发明授权

US08987855B2 Pad structures formed in double openings in dielectric layers 有权
公开(公告)号：US08987855B2
公开(公告)日：2015-03-24
申请号：US13198057
申请日：2011-08-04
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
IPC分类号： H01L27/146 , H01L31/18 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

47. 发明申请

US20140061737A1 Isolation for Semiconductor Devices 有权
标题翻译：半导体器件隔离
公开(公告)号：US20140061737A1
公开(公告)日：2014-03-06
申请号：US13598275
申请日：2012-08-29
申请人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
发明人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
IPC分类号： H01L27/146 , H01L31/18 , H01L27/088
CPC分类号： H01L27/14689 , H01L21/761 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L29/0649
摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
摘要翻译：提供一种用于隔离半导体器件的系统和方法。一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的介电材料。可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

48. 发明申请

US20130307104A1 Image Sensor Structure to Reduce Cross-Talk and Improve Quantum Efficiency 有权
标题翻译：图像传感器结构，以减少交叉和提高量子效率
公开(公告)号：US20130307104A1
公开(公告)日：2013-11-21
申请号：US13476785
申请日：2012-05-21
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Jeng-Shyan Lin , Wen-De Wang
IPC分类号： H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
摘要翻译：半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

49. 发明申请

US20130020662A1 NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
标题翻译：新型CMOS图像传感器结构
公开(公告)号：US20130020662A1
公开(公告)日：2013-01-24
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/02
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供其中设置有辐射感测区域的第一基板。该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。该方法包括将第二衬底的第一部分接合到第一衬底。该方法包括在接合之后，去除第二衬底的第二部分。该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

50. 发明授权

US08278152B2 Bonding process for CMOS image sensor 有权
标题翻译： CMOS图像传感器的粘合工艺
公开(公告)号：US08278152B2
公开(公告)日：2012-10-02
申请号：US12626296
申请日：2009-11-25
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Chen-Cheng Kuo , Chen-Shien Chen , Shou-Gwo Wuu
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/3171 , H01L23/481 , H01L24/12 , H01L27/14618 , H01L27/14683 , H01L2224/05001 , H01L2224/05009 , H01L2224/05548 , H01L2224/0557 , H01L2924/01019 , H01L2924/01068 , H01L2924/01078 , H01L2924/04941 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.
摘要翻译：本公开提供了制造集成电路（IC）的方法。该方法包括在基板的正面上形成电子装置; 在所述基板的前侧形成顶部金属焊盘，所述顶部金属焊盘联接到所述电气装置; 在所述基板的正面上形成钝化层，所述顶部金属焊盘嵌入所述钝化层中; 在钝化层中形成开口，暴露顶部金属垫; 在衬底中形成深沟槽; 在深沟槽和开口中填充导电材料，导致深沟槽中的贯穿晶片通孔（TWV）特征和开口中的焊盘TWV特征，其中顶部金属焊盘通过该沟槽连接到TWV特征 pad-TWV功能; 以及施加抛光工艺以去除过量的导电材料，形成基本平坦的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式