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41. 发明授权

US08345589B2 Method and apparatus for determining timing for initial ranging of user equipment using ranging of adjacent pieces of user equipment in multi-hop mobile relay system 有权
标题翻译：用于使用多跳移动中继系统中的相邻用户设备的测距来确定用户设备的初始测距的定时的方法和装置
公开(公告)号：US08345589B2
公开(公告)日：2013-01-01
申请号：US12518246
申请日：2007-10-31
申请人： Hyun-Jae Kim , Young-Il Kim
发明人： Hyun-Jae Kim , Young-Il Kim
IPC分类号： H04B7/14
CPC分类号： H04W56/002 , H04B7/2606 , H04W16/26 , H04W24/10 , H04W92/18
摘要： Provided is a method and apparatus for determining timing for initial ranging of user equipment by using ranging of adjacent pieces of user equipment in a multi-hop mobile relay (MMR) system, and more particularly, a method and apparatus for determining timing for initial ranging of user equipment in which a power value and a timing value for periodic ranging of adjacent pieces of user equipment are measured so as to minimize an uplink timing error of a base station. In the MMR system, user equipment transmits an initial ranging code to the base station with irregular timing while not knowing an exact start point of an uplink of the base station. In particular, if the user equipment attempts the initial ranging at the same time as when adjacent pieces of user equipment attempt the periodic ranging and the handover ranging, an error occurs between transmission timing of the initial ranging and uplink timing, thereby acting as an inter-symbol interference (ISI) and inter-channel interference (ICI) of different ranging. As a result, the initial ranging acts as an interference signal in a ranging process of adjacent pieces of user equipment. However, the apparatus and method can minimize a timing error of the initial ranging code of user equipment by avoiding the initial ranging acting as the interference signal.
摘要翻译：提供了一种用于通过使用多跳移动中继（MMR）系统中的相邻用户设备的测距来确定用户设备的初始测距的定时的方法和装置，更具体地，用于确定初始测距的定时的方法和装置测量用于相邻用户设备的周期性测距的功率值和定时值的用户设备，以使基站的上行链路定时误差最小化。在MMR系统中，用户设备以不规则的定时向基站发送初始测距码，而不知道基站的上行链路的确切起点。特别地，如果用户设备在相邻的用户设备尝试周期性测距和切换测距的同时尝试初始测距，则在初始测距和上行链路定时的传输定时之间出现错误，符号干扰（ISI）和不同范围的信道间干扰（ICI）。结果，初始测距在相邻的用户设备的测距过程中充当干扰信号。然而，该装置和方法可以通过避免作为干扰信号的初始测距来最小化用户设备的初始测距码的定时误差。

42. 发明授权

US08324052B2 Methods of fabricating non-volatile memory devices including double diffused junction regions 有权
标题翻译：制造包括双扩散连接区域的非易失性存储器件的方法
公开(公告)号：US08324052B2
公开(公告)日：2012-12-04
申请号：US13010583
申请日：2011-01-20
申请人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
发明人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
IPC分类号： H01L21/331
CPC分类号： H01L27/11521 , H01L21/26586 , H01L27/115 , H01L27/11524
摘要： A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括半导体衬底上的串选择栅极和接地选择栅极，以及在串选择栅极和地选择栅极之间的衬底上的多个存储单元栅极。第一杂质区域延伸到衬底中到多个存储单元门之间的第一深度。第二杂质区域延伸到衬底中的第二深度，该第二深度大于串选择栅极与紧邻其之间的多个存储单元栅极中的第一深度之间以及在接地选择栅极和最后一个栅极选择栅极之间的第一深度与其紧邻的多个存储单元门。还讨论了相关的制造方法。

43. 发明授权

US08319300B2 Solution composition for forming oxide thin film and electronic device including the oxide thin film 有权
标题翻译：用于形成氧化物薄膜的溶液组合物和包括氧化物薄膜的电子器件
公开(公告)号：US08319300B2
公开(公告)日：2012-11-27
申请号：US12662292
申请日：2010-04-09
申请人： Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-hee Kim , Byung-Du Ahn
发明人： Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-hee Kim , Byung-Du Ahn
IPC分类号： H01L27/14
CPC分类号： H01L29/7869
摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
摘要翻译：用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。锌和铪可以以约1:0.01至约1:1的原子比包括在内。

44. 发明申请

US20120157131A1 METHOD OF LOW-DUTY MODE OPERATION OF FEMTOCELL BASE STATION 有权
标题翻译： FEMTOCELL基站的低负荷模式运行方法
公开(公告)号：US20120157131A1
公开(公告)日：2012-06-21
申请号：US13393213
申请日：2010-08-10
申请人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Silk Yoon
发明人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Silk Yoon
IPC分类号： H04W68/00
CPC分类号： H04W68/00 , H04W84/045
摘要： A method of setting a cycle of a low-duty mode in a femto base station is provided. The cycle of the low-duty mode has a pattern in which an available interval and an unavailable interval repeatedly appear, and the available interval is set to include a paging listening interval of a paging cycle. A method of setting a cycle of a low-duty mode in a femto base station having a service area overlapping with that of a macrocell is provided. An unavailable interval is set by taking the overlapping degree of the service area of the femto base station with the macrocell into consideration. A method of setting a cycle of a low-duty mode in a plurality of femto base stations operated in the low-duty mode is provided. The same cycle can be set for a plurality of base stations.
摘要翻译：提供了一种在毫微微基站中设置低占空比模式的周期的方法。低功率模式的周期具有重复出现可用间隔和不可用间隔的模式，并且可用间隔被设置为包括寻呼周期的寻呼监听间隔。提供了在具有与宏小区的服务区域重叠的服务区域的毫微微基站中设置低负载模式的周期的方法。通过考虑具有宏小区的毫微微基站的服务区域的重叠度来设置不可用间隔。提供一种在低功率模式下操作的多个毫微微基站中设置低占空比模式的周期的方法。可以为多个基站设置相同的周期。

45. 发明申请

US20110111570A1 METHODS OF FABRICATING NON-VOLATILE MEMORY DEVICES INCLUDING DOUBLE DIFFUSED JUNCTION REGIONS 有权
标题翻译：制造非易失性记忆装置的方法，包括双重扩散结区
公开(公告)号：US20110111570A1
公开(公告)日：2011-05-12
申请号：US13010583
申请日：2011-01-20
申请人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
发明人： Dong-Yean Oh , Jai-Hyuk Song , Chang-Sub Lee , Chang-Hyun Lee , Hyun-Jae Kim
IPC分类号： H01L21/8234
CPC分类号： H01L27/11521 , H01L21/26586 , H01L27/115 , H01L27/11524
摘要： A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括半导体衬底上的串选择栅极和接地选择栅极，以及在串选择栅极和地选择栅极之间的衬底上的多个存储单元栅极。第一杂质区域延伸到衬底中到多个存储单元门之间的第一深度。第二杂质区域延伸到衬底中的第二深度，该第二深度大于串选择栅极与紧邻其之间的多个存储单元栅极中的第一深度之间以及在接地选择栅极和最后一个栅极选择栅极之间的第一深度与其紧邻的多个存储单元门。还讨论了相关的制造方法。

46. 发明申请

US20100258793A1 Solution composition for forming oxide thin film and electronic device including the oxide thin film 有权
标题翻译：用于形成氧化物薄膜的溶液组合物和包括氧化物薄膜的电子器件
公开(公告)号：US20100258793A1
公开(公告)日：2010-10-14
申请号：US12662292
申请日：2010-04-09
申请人： Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-Hee Kim , Byung-Du Ahn
发明人： Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-Hee Kim , Byung-Du Ahn
IPC分类号： H01L29/786 , H01B1/02 , H01B1/12 , H01B1/22
CPC分类号： H01L29/7869
摘要： A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
摘要翻译：用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。锌和铪可以以约1:0.01至约1:1的原子比包括在内。

47. 发明申请

US20100011046A1 APPARATUS AND METHOD FOR VARIABLE FAST FOURIER TRANSFORM 有权
标题翻译：用于可变快速傅立叶变换的装置和方法
公开(公告)号：US20100011046A1
公开(公告)日：2010-01-14
申请号：US12517781
申请日：2007-06-18
申请人： Young-Jin Moon , Hyun-Jae Kim , Ki-Seok Kim , Young-Il Kim
发明人： Young-Jin Moon , Hyun-Jae Kim , Ki-Seok Kim , Young-Il Kim
IPC分类号： G06F17/14
CPC分类号： G06F17/142
摘要： The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.
摘要翻译：本发明涉及一种用于可变快速傅里叶变换的装置和方法。根据本发明的实施例，使用两个n点快速傅里叶变换（FFT）处理器来产生两个n点FFT输出数据或一个2n点FFT输出数据。一个2n点输入数据交替地输入到两个n点FFT处理器。两个n点FFT处理器中的每一个为n点输入数据或2n点输入数据选择旋转因子，并执行快速傅里叶变换。对通过对2n点输入数据信号执行快速傅里叶变换获得的信号执行蝶形运算，并且处理的信号以输出顺序对准。根据该结构，能够实现在支持多频分配的基站系统中选择性地进行多频分配的快速傅里叶变换硬件引擎。

48. 发明申请

US20070230096A1 Slim type portable terminal 失效
标题翻译：超薄型便携式终端
公开(公告)号：US20070230096A1
公开(公告)日：2007-10-04
申请号：US11453851
申请日：2006-06-16
申请人： Shin-Dong Ryu , Hyun-Jae Kim
发明人： Shin-Dong Ryu , Hyun-Jae Kim
IPC分类号： H05K5/00
CPC分类号： H04M1/0202 , H01R12/7076 , H04M1/0235 , H04M1/0266
摘要： A slim type portable terminal is provided comprising a first housing on which a keypad and a microphone unit are arranged, and a second housing comprising a liquid crystal display unit and a speaker unit, in which a printed circuit board is disposed adjacent to the liquid crystal display unit and arranged side by side with the liquid crystal display unit on a co-planar surface, and a buffer member is attached to an upper surface of the liquid crystal display unit, through which a flexible circuit provided to the terminal extends.
摘要翻译：提供了一种细长型便携式终端，包括：第一壳体，其上布置有键盘和麦克风单元;以及第二壳体，包括液晶显示单元和扬声器单元，其中印刷电路板邻近液晶显示单元，并排配置在共面上的液晶显示单元，缓冲部件安装在液晶显示单元的上表面，通过该液晶显示单元设置在端子上的柔性电路延伸。

49. 发明申请

US20070121666A1 Apparatus and method for allocating subchannel and power in communication system, and transmitting apparatus 有权
标题翻译：在通信系统中分配子信道和功率的装置和方法以及发送装置
公开(公告)号：US20070121666A1
公开(公告)日：2007-05-31
申请号：US11604931
申请日：2006-11-28
申请人： Hyun-Jae Kim , Jung-Hoon Oh , Young-Il Kim
发明人： Hyun-Jae Kim , Jung-Hoon Oh , Young-Il Kim
IPC分类号： H04L12/43
CPC分类号： H04L27/2608 , H04W52/223 , H04W52/281 , H04W52/346
摘要： In a communication system, subchannel state information for a plurality of user equipments (UEs) are collected, and a plurality of subchannel state prediction parameter values for the respective UEs are calculated using the subchannel state information. In addition, the communication system allocates at least one subchannel among the plurality of subchannels to a first UE having the highest priority. Subsequently, the communication system determines whether to allocate additional power to the at least one subchannel based on the plurality of subchannel state prediction parameter values, and allocates additional power to a subchannel that needs the additional power among the at least one subchannel.
摘要翻译：在通信系统中，收集用于多个用户设备（UE）的子信道状态信息，并且使用子信道状态信息来计算各个UE的多个子信道状态预测参数值。此外，通信系统将多个子信道中的至少一个子信道分配给具有最高优先级的第一UE。随后，通信系统基于多个子信道状态预测参数值确定是否向至少一个子信道分配附加功率，并且为在至少一个子信道中需要附加功率的子信道分配附加功率。

50. 发明授权

US09185679B2 Method of low-duty mode operation of femtocell base station 有权
标题翻译：毫微微小区基站的低负载模式运行方法
公开(公告)号：US09185679B2
公开(公告)日：2015-11-10
申请号：US13393213
申请日：2010-08-10
申请人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Sik Yoon
发明人： Sung Cheol Chang , Won-Ik Kim , Hyun-Jae Kim , Sung Kyung Kim , Chul Sik Yoon
IPC分类号： H04W68/00 , H04W84/04
CPC分类号： H04W68/00 , H04W84/045
摘要： A method of setting a cycle of a low-duty mode in a femto base station is provided. The cycle of the low-duty mode has a pattern in which an available interval and an unavailable interval repeatedly appear, and the available interval is set to include a paging listening interval of a paging cycle. A method of setting a cycle of a low-duty mode in a femto base station having a service area overlapping with that of a macrocell is provided. An unavailable interval is set by taking the overlapping degree of the service area of the femto base station with the macrocell into consideration. A method of setting a cycle of a low-duty mode in a plurality of femto base stations operated in the low-duty mode is provided. The same cycle can be set for a plurality of base stations.
摘要翻译：提供了一种在毫微微基站中设置低占空比模式的周期的方法。低功率模式的周期具有重复出现可用间隔和不可用间隔的模式，并且可用间隔被设置为包括寻呼周期的寻呼监听间隔。提供了在具有与宏小区的服务区域重叠的服务区域的毫微微基站中设置低负载模式的周期的方法。通过考虑具有宏小区的毫微微基站的服务区域的重叠度来设置不可用间隔。提供一种在低功率模式下操作的多个毫微微基站中设置低占空比模式的周期的方法。可以为多个基站设置相同的周期。

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