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    • 41. 发明授权
    • Touch panel, display device, and electronic device
    • 触摸面板,显示设备和电子设备
    • US09035908B2
    • 2015-05-19
    • US12639624
    • 2009-12-16
    • Yoshiyuki Kurokawa
    • Yoshiyuki Kurokawa
    • G06F3/042G02F1/1333G06F3/041G02F1/133G09G3/34
    • G06F3/0412G02F1/13338G02F2001/13312G06F3/042G09G3/3406G09G2310/0235G09G2320/0626G09G2360/144
    • It is an object to provide a touch panel with high precision, high-speed operation, and low power consumption, which is caused by reduction of power consumption in an A/D converter circuit is reduced. In the touch panel in which a photo sensor is included in a pixel and an A/D converter circuit is provided every one column or a plurality of columns of the pixels, a control signal of the A/D converter circuit is sequentially supplied by a shift register included in an ADC (A/D converter circuit) control circuit, and respective periods when the plurality of A/D converter circuits operates are not overlap with each other. Accordingly, the number of A/D converter circuits which operate at the same time is decreased, and instantaneous power consumption in the A/D converter circuit is decreased.
    • 本发明的目的是提供一种具有高精度,高速运行和低功耗的触摸面板,这是由于减少A / D转换电路中的功耗降低而引起的。 在像素中包括光电传感器的触摸面板和每一列或多列像素提供A / D转换器电路的情况下,A / D转换电路的控制信号由 包括在ADC(A / D转换器电路)控制电路中的移位寄存器以及多个A / D转换器电路操作的各个周期彼此不重叠。 因此,同时工作的A / D转换器电路的数量减少,并且A / D转换器电路中的瞬时功耗降低。
    • 45. 发明授权
    • Clock generation circuit and semiconductor device including the same
    • 时钟生成电路和包括其的半导体器件
    • US08510588B2
    • 2013-08-13
    • US13353497
    • 2012-01-19
    • Masami EndoTakayuki IkedaDaisuke KawaeYoshiyuki Kurokawa
    • Masami EndoTakayuki IkedaDaisuke KawaeYoshiyuki Kurokawa
    • G06F1/04
    • H04L7/0331H03L7/00
    • Objects of the invention are to provide a clock generation circuit and to provide a semiconductor device including the clock generation circuit. The clock generation circuit includes an edge detection circuit, a reference clock generation circuit, a reference clock counter circuit, and a frequency-divider circuit. The reference clock counter circuit is a circuit which outputs a counter value, which is obtained by counting the number of waves of a reference clock signal outputted from the reference clock generation circuit, in a period of time from when the edge detection circuit detects an edge of a signal which is externally inputted to the edge detection circuit to when the edge detection circuit detects the next edge, to the frequency-divider circuit. The frequency-divider circuit is a circuit which frequency-divides the reference clock signal based on the counter value.
    • 本发明的目的是提供一种时钟发生电路并提供包括时钟发生电路的半导体器件。 时钟产生电路包括边缘检测电路,参考时钟产生电路,参考时钟计数器电路和分频器电路。 参考时钟计数器电路是在从边缘检测电路检测到边缘的时间段内输出计数值的电路,该计数值是从基准时钟产生电路输出的基准时钟信号的波数来计算的 将外部输入到边缘检测电路的信号当边缘检测电路检测到下一个边沿时,分配给分频器电路。 分频器电路是基于计数器值对参考时钟信号进行分频的电路。
    • 46. 发明授权
    • Semiconductor device, memory circuit, and machine language program generation device, and method for operating semiconductor device and memory circuit
    • 半导体器件,存储器电路和机器语言程序生成装置,以及用于操作半导体器件和存储器电路的方法
    • US08429634B2
    • 2013-04-23
    • US11878518
    • 2007-07-25
    • Hiroki DemboYoshiyuki KurokawaMasami Endo
    • Hiroki DemboYoshiyuki KurokawaMasami Endo
    • G06F9/45
    • G06F8/447G06F9/4484
    • A semiconductor device has an arithmetic processing circuit provided with an arithmetic circuit and a control circuit and a memory circuit provided with a ROM and a RAM, where the arithmetic processing circuit and the memory circuit are connected to each other through an address bus and a data bus, a machine language program executed using the arithmetic processing circuit is stored in the ROM, the RAM has a plurality of banks, processing data obtained by executing the machine language program is divided into a plurality of stacks to be written to the plurality of banks, and the arithmetic processing circuit is operated in accordance with the machine language program so that, in the plurality of stacks stored in the plurality of banks, a stack of which data is not used until the machine language program is terminated is omitted and contiguous stacks are written to the same bank.
    • 一种半导体器件具有运算电路和控制电路的运算处理电路和具有ROM和RAM的存储电路,其中算术处理电路和存储电路通过地址总线和数据彼此连接 总线,使用算术处理电路执行的机器语言程序被存储在ROM中,RAM具有多个存储体,通过执行机器语言程序获得的处理数据被划分为要写入多个存储体的多个堆叠 并且算术处理电路根据机器语言程序进行操作,从而在多个存储体中存储的多个堆栈中省略了在机器语言程序终止之前不使用数据的堆栈,并且连续的堆栈 被写入同一家银行。
    • 49. 发明申请
    • MEMORY CIRCUIT, MEMORY UNIT, AND SIGNAL PROCESSING CIRCUIT
    • 存储器电路,存储器和信号处理电路
    • US20120250407A1
    • 2012-10-04
    • US13429574
    • 2012-03-26
    • Yoshiyuki Kurokawa
    • Yoshiyuki Kurokawa
    • G11C11/40
    • G11C7/1006G11C16/045H01L27/06H01L27/0688H01L27/1225
    • A memory circuit includes a transistor having a channel in an oxide semiconductor layer, a capacitor, a first arithmetic circuit, a second arithmetic circuit, a third arithmetic circuit, and a switch. An output terminal of the first arithmetic circuit is electrically connected to an input terminal of the second arithmetic circuit. The input terminal of the second arithmetic circuit is electrically connected to an output terminal of the third arithmetic circuit via the switch. An output terminal of the second arithmetic circuit is electrically connected to an input terminal of the first arithmetic circuit. An input terminal of the first arithmetic circuit is electrically connected to one of a source and a drain of the transistor. The other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit.
    • 存储电路包括具有氧化物半导体层中的沟道的晶体管,电容器,第一运算电路,第二运算电路,第三运算电路和开关。 第一运算电路的输出端电连接到第二运算电路的输入端。 第二运算电路的输入端经由开关电连接到第三运算电路的输出端子。 第二运算电路的输出端电连接到第一运算电路的输入端。 第一运算电路的输入端子电连接到晶体管的源极和漏极之一。 晶体管的源极和漏极中的另一个电连接到电容器的一对电极和第三运算电路的输入端子之一。