专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08329536B2 Method for manufacturing semiconductor device with silicon nitride charge trapping film having varying hydrogen concentration 有权
标题翻译：用具有不同氢浓度的氮化硅电荷俘获膜制造半导体器件的方法
公开(公告)号：US08329536B2
公开(公告)日：2012-12-11
申请号：US13191830
申请日：2011-07-27
申请人： Kosei Noda
发明人： Kosei Noda
IPC分类号： H01L21/8239
CPC分类号： H01L29/7883 , C23C16/345 , C23C16/56 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02252 , H01L21/02274 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/28282 , H01L21/31612 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1237 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7884 , H01L29/792
摘要： To improve a charge retention characteristic of a nonvolatile memory transistor. A first insulating film, a charge trapping film, and a second insulating film are formed between a semiconductor substrate and a conductive film. The charge trapping film is formed of a silicon nitride film including an upper region having a low concentration of hydrogen and a lower region having a high concentration of hydrogen. Such a silicon nitride film is formed in such a manner that a silicon nitride film including 15 atomic % or more hydrogen is formed by a chemical vapor deposition method and an upper portion of the silicon nitride film is nitrided. The nitridation treatment is performed by nitriding the silicon nitride film by nitrogen radicals produced in plasma of a nitrogen gas.
摘要翻译：提高非易失性存储晶体管的电荷保持特性。在半导体基板和导电膜之间形成第一绝缘膜，电荷俘获膜和第二绝缘膜。电荷捕获膜由包括具有低浓度氢的上部区域和具有高浓度氢的下部区域的氮化硅膜形成。这样的氮化硅膜以这样的方式形成，即通过化学气相沉积法形成包含15原子％以上的氢的氮化硅膜，氮化硅膜的上部被氮化。通过在氮气等离子体中产生的氮自由基氮化氮化膜进行氮化处理。

42. 发明申请

US20120153275A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120153275A1
公开(公告)日：2012-06-21
申请号：US13316604
申请日：2011-12-12
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
摘要翻译：制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。使用包含其组成被控制的氧化钨膜的栅电极。通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

43. 发明授权

US07999308B2 Nonvolatile semiconductor memory element with silicon nitride charge trapping film having varying hydrogen concentration 有权
标题翻译：具有不同氢浓度的氮化硅电荷俘获膜的非易失性半导体存储元件
公开(公告)号：US07999308B2
公开(公告)日：2011-08-16
申请号：US12230122
申请日：2008-08-22
申请人： Kosei Noda
发明人： Kosei Noda
IPC分类号： H01L29/792
CPC分类号： H01L29/7883 , C23C16/345 , C23C16/56 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02252 , H01L21/02274 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/28282 , H01L21/31612 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1237 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7884 , H01L29/792
摘要： To improve a charge retention characteristic of a nonvolatile memory transistor. A first insulating film, a charge trapping film, and a second insulating film are formed between a semiconductor substrate and a conductive film. The charge trapping film is formed of a silicon nitride film including an upper region having a low concentration of hydrogen and a lower region having a high concentration of hydrogen. Such a silicon nitride film is formed in such a manner that a silicon nitride film including 15 atomic % or more hydrogen is formed by a chemical vapor deposition method and an upper portion of the silicon nitride film is nitrided. The nitridation treatment is performed by nitriding the silicon nitride film by nitrogen radicals produced in plasma of a nitrogen gas.
摘要翻译：提高非易失性存储晶体管的电荷保持特性。在半导体基板和导电膜之间形成第一绝缘膜，电荷俘获膜和第二绝缘膜。电荷捕获膜由包括具有低浓度氢的上部区域和具有高浓度氢的下部区域的氮化硅膜形成。这样的氮化硅膜以这样的方式形成，即通过化学气相沉积法形成包含15原子％以上的氢的氮化硅膜，氮化硅膜的上部被氮化。通过在氮气等离子体中产生的氮自由基氮化氮化膜进行氮化处理。

44. 发明授权

US09691772B2 Semiconductor memory device including memory cell which includes transistor and capacitor 有权
公开(公告)号：US09691772B2
公开(公告)日：2017-06-27
申请号：US13402194
申请日：2012-02-22
申请人： Kosei Noda , Yuta Endo
发明人： Kosei Noda , Yuta Endo
IPC分类号： H01L29/786 , H01L27/108 , H01L21/02 , H01L27/12 , H01L29/423
CPC分类号： H01L27/10873 , H01L21/02554 , H01L21/02565 , H01L27/10805 , H01L27/1225 , H01L29/42384 , H01L29/7869 , H01L29/78696
摘要： A semiconductor memory device includes a transistor and a capacitor. The transistor includes: an insulating film in which a groove portion is provided; a pair of electrodes separated so that the groove portion is sandwiched therebetween; an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces and a bottom surface of the groove portion and has a thickness value smaller than a depth value of the groove portion; a gate insulating film covering the oxide semiconductor film; and a gate electrode provided to overlap with the oxide semiconductor film with the gate insulating film positioned therebetween.

45. 发明授权

US08853684B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08853684B2
公开(公告)日：2014-10-07
申请号：US13109594
申请日：2011-05-17
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato , Mitsuhiro Ichijo , Toshiya Endo
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01L29/04 , H01L29/786 , H01L29/49
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.
摘要翻译：在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。本发明的目的是提供一种具有良好电特性的半导体器件。与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

46. 发明授权

US08841664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08841664B2
公开(公告)日：2014-09-23
申请号：US13404516
申请日：2012-02-24
申请人： Hitomi Sato , Takayuki Saito , Kosei Noda , Toru Takayama
发明人： Hitomi Sato , Takayuki Saito , Kosei Noda , Toru Takayama
IPC分类号： H01L29/10 , H01L29/786 , H01L27/108 , H01L29/49 , H01L27/115
CPC分类号： H01L29/7869 , H01L27/10873 , H01L27/1156 , H01L29/4908 , H01L29/78603 , H01L29/78606
摘要： Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.
摘要翻译：提供了一种高可靠性的半导体器件，其通过对其中阈值电压难以控制的半导体膜用作有源层的晶体管给予稳定的电特性。通过使用具有负固定电荷的氧化硅膜作为与晶体管的有源层或有源层附近的膜接触的膜，由于负固定，总是向有源层施加负电场电荷和晶体管的阈值电压可以向正方向移动。因此，可以通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。

47. 发明授权

US08642380B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08642380B2
公开(公告)日：2014-02-04
申请号：US13165963
申请日：2011-06-22
申请人： Kosei Noda
发明人： Kosei Noda
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618
摘要： An object is to provide a manufacturing method of a semiconductor device having a high field effect mobility and including an oxide semiconductor layer in a semiconductor device including an oxide semiconductor. Another object is to provide a manufacturing method of a semiconductor device capable of high speed operation. An oxide semiconductor layer is terminated by a halogen element, and thus an increase in the contact resistance between the oxide semiconductor layer and a conductive layer in contact with the oxide semiconductor layer is suppressed. Therefore, the contact resistance between the oxide semiconductor layer and the conductive layer becomes favorable and a transistor having a high field effect mobility can be manufactured.
摘要翻译：本发明的目的是提供具有高场效应迁移率的半导体器件的制造方法，并且在包括氧化物半导体的半导体器件中包括氧化物半导体层。另一个目的是提供能够进行高速操作的半导体器件的制造方法。氧化物半导体层被卤素元件端接，从而抑制氧化物半导体层与与氧化物半导体层接触的导电层之间的接触电阻的增加。因此，氧化物半导体层和导电层之间的接触电阻变得良好，并且可以制造具有高场效应迁移率的晶体管。

48. 发明授权

US08476719B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08476719B2
公开(公告)日：2013-07-02
申请号：US13110241
申请日：2011-05-18
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/4908 , H01L29/66969 , H01L29/78606
摘要： Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
摘要翻译：氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。因此，可以制造可靠性高，电特性变化小的半导体装置。

49. 发明授权

US07851296B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07851296B2
公开(公告)日：2010-12-14
申请号：US12076522
申请日：2008-03-19
申请人： Kosei Noda , Nanae Sato
发明人： Kosei Noda , Nanae Sato
IPC分类号： H01L21/8239 , H01L21/8247
CPC分类号： H01L29/792 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/11568 , H01L27/1203 , H01L27/1237 , H01L29/66833
摘要： A charge retention characteristic of a nonvolatile memory transistor is improved. A first insulating film that functions as a tunnel insulating film, a charge storage layer, and a second insulating film are sandwiched between a semiconductor substrate and a conductive film. The charge storage layer is formed of two silicon nitride films. A silicon nitride film which is a lower layer is formed using NH3 as a nitrogen source gas by a CVD method and contains a larger number of N—H bonds than the upper layer. A second silicon nitride film which is an upper layer is formed using N2 as a nitrogen source gas by a CVD method and contains a larger number of Si—H bonds than the lower layer.
摘要翻译：提高了非易失性存储晶体管的电荷保持特性。用作隧道绝缘膜，电荷存储层和第二绝缘膜的第一绝缘膜夹在半导体衬底和导电膜之间。电荷存储层由两个氮化硅膜形成。使用NH 3作为氮源气体通过CVD法形成作为下层的氮化硅膜，并且含有比上层更大数量的N-H键。作为上层的第二氮化硅膜使用氮气作为氮源气体通过CVD法形成，并且含有比下层更多的Si-H键。

50. 发明授权

US09299851B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09299851B2
公开(公告)日：2016-03-29
申请号：US13282529
申请日：2011-10-27
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda
IPC分类号： H01L21/84 , H01L29/786 , H01L27/12
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02631 , H01L21/02664 , H01L21/441 , H01L21/465 , H01L27/1225 , H01L29/24 , H01L29/7869
摘要： An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.
摘要翻译：本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式