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41. 发明授权

US08854286B2 Liquid crystal display device and electronic device including the liquid crystal display device 有权
标题翻译：液晶显示装置和包括液晶显示装置的电子装置
公开(公告)号：US08854286B2
公开(公告)日：2014-10-07
申请号：US12901023
申请日：2010-10-08
申请人： Shunpei Yamazaki , Ryo Arasawa , Jun Koyama , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Ryo Arasawa , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： G09G3/36 , H01L27/12 , H01L29/786
CPC分类号： G09G3/3614 , G02F1/133553 , G02F1/13439 , G02F1/1368 , G02F2201/123 , G02F2202/10 , G09G3/3648 , G09G3/3677 , G09G2300/08 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , H01L21/02164 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.
摘要翻译：在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被截止，并且所述图像信号在所述保持周期中保持至少30秒。像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

42. 发明授权

US08324620B2 Semiconductor device having oxide semiconductor layer 有权
公开(公告)号：US08324620B2
公开(公告)日：2012-12-04
申请号：US12872823
申请日：2010-08-31
申请人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L29/12 , H01L29/786
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

43. 发明授权

US08242837B2 Analog circuit and semiconductor device 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US08242837B2
公开(公告)日：2012-08-14
申请号：US12907559
申请日：2010-10-19
申请人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

44. 发明授权

US09349750B2 Semiconductor device and display device 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US09349750B2
公开(公告)日：2016-05-24
申请号：US14077390
申请日：2013-11-12
申请人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
发明人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/78648
摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.
摘要翻译：半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

45. 发明授权

US08835918B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08835918B2
公开(公告)日：2014-09-16
申请号：US13608039
申请日：2012-09-10
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1218 , H01L27/1225
摘要： To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.
摘要翻译：为了提供包括氧化物半导体并且能够高速运行的晶体管或包括晶体管的高度可靠的半导体器件，提供了包括一对低电阻区域和沟道形成区域的氧化物半导体层的晶体管在基底绝缘层上嵌入并且其上表面至少部分地从基底绝缘层露出的电极层上，并且设置在氧化物半导体层上方的布线层电连接到电极层或电极层的一部分氧化物半导体层的低电阻区域与电极层重叠。

46. 发明授权

US09136389B2 Oxide semiconductor, thin film transistor, and display device 有权
标题翻译：氧化物半导体，薄膜晶体管和显示装置
公开(公告)号：US09136389B2
公开(公告)日：2015-09-15
申请号：US12581200
申请日：2009-10-19
申请人： Shunpei Yamazaki , Toshinari Sasaki , Miyuki Hosoba , Shunichi Ito , Junichiro Sakata
发明人： Shunpei Yamazaki , Toshinari Sasaki , Miyuki Hosoba , Shunichi Ito , Junichiro Sakata
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/45 , H01L29/78618
摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.
摘要翻译：目的是控制氧化物半导体的组成和缺陷。另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数）小于50），还含有氢。在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。此外，氧化物半导体具有非晶结构。这里，n优选为大于或等于50，更优选小于10的非整数。

47. 发明授权

US08847233B2 Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film 有权
标题翻译：具有涂覆有氧化物半导体膜的沟槽绝缘层的半导体器件
公开(公告)号：US08847233B2
公开(公告)日：2014-09-30
申请号：US13463092
申请日：2012-05-03
申请人： Atsuo Isobe , Toshinari Sasaki , Junichi Koezuka , Shunpei Yamazaki
发明人： Atsuo Isobe , Toshinari Sasaki , Junichi Koezuka , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/01 , H01L27/12 , H01L31/0392 , H01L27/108 , H01L21/84 , H01L49/02 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/115
CPC分类号： H01L29/4238 , H01L21/02565 , H01L21/265 , H01L21/425 , H01L21/84 , H01L27/1085 , H01L27/10876 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/40 , H01L29/045 , H01L29/0847 , H01L29/66477 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78693
摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.
摘要翻译：本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。利用上述结构，可以实现小型化。此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

48. 发明授权

US08822989B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08822989B2
公开(公告)日：2014-09-02
申请号：US13613178
申请日：2012-09-13
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/12 , H01L27/1225 , H01L29/10 , H01L29/41733 , H01L29/41775
摘要： Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films.
摘要翻译：提供了即使在小型化时也具有大导通状态的晶体管的半导体装置。晶体管包括在绝缘表面上的一对第一导电膜; 在一对第一导电膜上的半导体膜; 一对第二导电膜，其中一对第二导电膜中的一个和一对第二导电膜中的另一个分别连接到一对第一导电膜中的一个和一对第一导电膜中的另一个; 半导体膜上的绝缘膜; 以及设置在与绝缘膜上的半导体膜重叠的位置的第三导电膜。此外，在半导体膜之上，第三导电膜插入在一对第二导电膜之间并远离一对第二导电膜。

49. 发明授权

US08389989B2 Transistor having oxide semiconductor layer and display utilizing the same 有权
标题翻译：具有氧化物半导体层的晶体管和利用其的显示器
公开(公告)号：US08389989B2
公开(公告)日：2013-03-05
申请号：US12869278
申请日：2010-08-26
申请人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
发明人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
摘要翻译：本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层，使用金属材料形成。因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。

50. 发明授权

US08994024B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08994024B2
公开(公告)日：2015-03-31
申请号：US12835905
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
IPC分类号： H01L29/04 , H01L27/12 , H01L29/45
CPC分类号： H01L27/124 , H01L27/1225 , H01L29/45
摘要： A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
摘要翻译：制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。显示装置包括在同一基板上的驱动电路部分和显示部分。驱动器电路部分包括驱动电路晶体管和驱动电路布线。使用金属形成驱动电路晶体管的源电极和漏电极。使用氧化物半导体形成驱动电路晶体管的沟道层。驱动电路布线使用金属形成。显示部分包括像素晶体管和显示部分布线。使用透明氧化物导体形成像素晶体管的源电极和漏电极。使用氧化物半导体形成像素晶体管的半导体层。显示部分布线使用透明氧化物导体形成。

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