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41. 发明申请

US20120280230A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20120280230A1
公开(公告)日：2012-11-08
申请号：US13552805
申请日：2012-07-19
申请人： Kengo AKIMOTO , Junichiro SAKATA , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Junichiro SAKATA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.
摘要翻译：本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏电极上方形成与所述氧化物半导体膜接触的绝缘膜。

42. 发明申请

US20110210328A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20110210328A1
公开(公告)日：2011-09-01
申请号：US13104548
申请日：2011-05-10
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

43. 发明申请

US20110114942A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110114942A1
公开(公告)日：2011-05-19
申请号：US12943558
申请日：2010-11-10
申请人： Kengo AKIMOTO , Junichiro SAKATA , Yoshiaki OIKAWA , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Junichiro SAKATA , Yoshiaki OIKAWA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/45
摘要： It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.
摘要翻译：本发明的目的是提供一种用于制造具有使用氧化物半导体形成并且具有稳定的电特性的薄膜晶体管的高度可靠的半导体器件的方法。半导体器件包括与栅电极重叠的氧化物半导体膜，其间插入有栅极绝缘膜; 以及与氧化物半导体膜接触的源电极和漏电极。源电极和漏极包括含有一种或多种具有低电负性的金属如钛，镁，钇，铝，钨和钼的混合物，金属化合物或合金。源电极和漏电极中的氢浓度是氧化物半导体膜中的氢的浓度的1.2倍，优选为5倍以上。

44. 发明申请

US20110032444A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110032444A1
公开(公告)日：2011-02-10
申请号：US12848404
申请日：2010-08-02
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA , Masashi TSUBUKU
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA , Masashi TSUBUKU
IPC分类号： G02F1/136 , H01L27/12 , H01L21/34 , H01L21/84
CPC分类号： H01L27/1225 , G02F1/13306 , G02F1/133345 , G02F1/133528 , G02F1/1337 , G02F1/1339 , G02F1/13394 , G02F1/134336 , G02F1/13439 , G02F1/13454 , G02F1/136204 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/133357 , G02F2201/123 , G11C19/28 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L27/1288 , H01L29/247 , H01L29/78618 , H01L29/78648 , H01L29/78693 , H01L29/78696
摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
摘要翻译：目的是提高半导体器件的可靠性。提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线和第二布线。薄膜晶体管各自包括源极电极层和漏极电极层。在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

45. 发明申请

US20110012117A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20110012117A1
公开(公告)日：2011-01-20
申请号：US12835906
申请日：2010-07-14
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA
IPC分类号： H01L27/12 , H01L21/84 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1225 , H01L27/1262 , H01L29/45 , H01L29/78606 , H01L29/7869
摘要： An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
摘要翻译：目的是降低半导体器件的制造成本。目的是提高半导体器件的开口率。目的是使半导体器件的显示部分显示更高清晰度的图像。目的在于提供一种可以高速运转的半导体装置。该半导体器件包括一个基板上的驱动电路部分和显示部分。驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

46. 发明申请

US20110012106A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012106A1
公开(公告)日：2011-01-20
申请号：US12835119
申请日：2010-07-13
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Mari TERASHIMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Mari TERASHIMA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/124 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225
摘要： A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.
摘要翻译：提供一种半导体器件，其中在一个衬底上设置每个包括薄膜晶体管的像素部分和驱动器电路; 像素部分中的薄膜晶体管包括栅极电极层，栅极绝缘层，具有小厚度的端部区域的氧化物半导体层，与氧化物半导体层的一部分接触的氧化物绝缘层，源极和漏极层和像素电极层; 像素部分中的薄膜晶体管具有透光性; 并且使用具有比像素部分中的源极和漏极电极层的材料更低的电阻的导电材料形成驱动电路部分中的薄膜晶体管的源极和漏极电极层。

47. 发明申请

US20100258792A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20100258792A1
公开(公告)日：2010-10-14
申请号：US12823675
申请日：2010-06-25
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Ryoji NOMURA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Ryoji NOMURA
IPC分类号： H01L51/54
CPC分类号： H01L51/52 , H01L51/5048 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。第一复合层和第二复合层各自包括金属氧化物和有机化合物。第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。此外，复合层不限于两层结构。可以采用多层结构。然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

48. 发明申请

US20100163868A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100163868A1
公开(公告)日：2010-07-01
申请号：US12646085
申请日：2009-12-23
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
IPC分类号： H01L29/786 , H01L21/36 , H01L21/336 , H01L29/22
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
摘要翻译：提供一种包括具有氧化物半导体层和优异的电特性的薄膜晶体管的半导体器件。此外，提供了一种用于制造半导体器件的方法，其中在一个衬底上形成了多种不同结构的薄膜晶体管，以形成多种电路，并且其中步骤数目没有大大增加。在绝缘表面上形成金属薄膜之后，在其上形成氧化物半导体层。然后，进行氧化处理如热处理以部分或全部氧化金属薄膜。此外，在诸如逻辑电路和矩阵电路之类的重点放在诸如操作速度的电路之间，薄膜晶体管的结构是不同的。

49. 发明申请

US20070194321A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20070194321A1
公开(公告)日：2007-08-23
申请号：US11673153
申请日：2007-02-09
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
IPC分类号： H01L29/04
CPC分类号： H05B33/22 , H01L51/5278 , H05B33/10
摘要： It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.
摘要翻译：本发明的目的是提供一种可以在低电压下驱动的发光元件。本发明的其他目的是提供一种具有高发光效率的发光元件; 具有高亮度的发光元件; 具有长寿命发光的发光元件; 具有降低的功耗的发光元件和电子设备; 以及可以以低成本制造的发光元件和电子设备。发光元件在第一电极和第二电极之间具有发光层和阻挡层，发光层含有基材和杂质元素，并且阻挡层设置成与第一电极和第二电极接触。电极。当施加电压使得第二电极的电位变得高于第一电极的电位时获得发光。

50. 发明申请

US20120300151A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120300151A1
公开(公告)日：2012-11-29
申请号：US13567327
申请日：2012-08-06
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
IPC分类号： H01L27/15 , G02F1/136
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

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