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41. 发明申请

US20070209575A1 Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal 有权
标题翻译：氮化镓单晶生长法和氮化镓单晶
公开(公告)号：US20070209575A1
公开(公告)日：2007-09-13
申请号：US10594846
申请日：2005-03-30
申请人： Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
发明人： Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
IPC分类号： C30B9/00 , C30B17/00
CPC分类号： C30B9/10 , C30B29/406
摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.
摘要翻译：提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。使用至少含有金属钠的焊剂8生长氮化镓单晶。氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。优选地，大气中的氮分压为100atms以上且2000atms以下。优选地，生长温度为1000℃以上且1500℃以下。

42. 发明申请

US20060120415A1 Blue laser beam oscillating method and system 审中-公开
标题翻译：蓝色激光束振荡方法和系统
公开(公告)号：US20060120415A1
公开(公告)日：2006-06-08
申请号：US11329019
申请日：2006-01-10
申请人： Makoto Iwai , Katsuhiro Imai , Takashi Yoshino , Minoru Imaeda
发明人： Makoto Iwai , Katsuhiro Imai , Takashi Yoshino , Minoru Imaeda
IPC分类号： H01S3/10
CPC分类号： G02F1/377 , G02F2202/20
摘要： It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.
摘要翻译：提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法，并且可以提高蓝色激光束的输出功率。从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。蓝色激光束“B”从平板光波导8发射。

43. 发明授权

US08241422B2 Gallium nitride single crystal growing method and gallium nitride single crystal 有权
标题翻译：氮化镓单晶生长法和氮化镓单晶
公开(公告)号：US08241422B2
公开(公告)日：2012-08-14
申请号：US10594846
申请日：2005-03-30
申请人： Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
发明人： Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
IPC分类号： C30B25/12
CPC分类号： C30B9/10 , C30B29/406
摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.
摘要翻译：提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。使用至少含有金属钠的焊剂8生长氮化镓单晶。氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。优选地，大气中的氮分压为100atms以上且2000atms以下。优选地，生长温度为1000℃以上且1500℃以下。

44. 发明申请

US20120111264A1 METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL 审中-公开
标题翻译：生产第III族金属氮化物单晶的方法
公开(公告)号：US20120111264A1
公开(公告)日：2012-05-10
申请号：US13344809
申请日：2012-01-06
申请人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai
发明人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai
IPC分类号： C30B9/04
CPC分类号： H01L21/02639 , C30B9/10 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0265
摘要： A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface 1b is 100 μm or more and 1 mm or less.
摘要翻译：属于III族的金属的氮化物的单晶的多个晶种膜形成在基板上，而在衬底上形成未被晶种膜覆盖的非生长表面。属于III族的金属的氮化物的单晶生长在籽晶膜上。多个晶种膜由非生长面分离，并且沿至少两个方向X和Y排列。晶种膜的最大内接圆直径“A”为50μm以上且6mm以下，晶种膜的外接圆直径“B”为50μm以上且10mm以下，非生长面1b的最大内切圆直径“C”为100μm以上且1mm以下。

45. 发明申请

US20110274609A1 Group 3B nitride crystal substrate 有权
标题翻译： 3B族氮化物晶体基板
公开(公告)号：US20110274609A1
公开(公告)日：2011-11-10
申请号：US13135829
申请日：2011-07-15
申请人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
发明人： Takanao Shimodaira , Katsuhiro Imai , Makoto Iwai , Takayuki Hirao
IPC分类号： C01B21/06 , C30B19/04 , C30B19/02
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406
摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.
摘要翻译：根据本发明的13族氮化物晶体基板是通过利用通量法在种子晶体基板上生长13族氮化物晶体而制造的，其中在种籽晶的区域内生长的第13族氮化物晶体中的夹杂物的含量，除了晶种基板的圆周部分以外，晶种基板的面积分数相对于晶种基板的整个面积为70％的区域为10％以下，优选为2％以下。

46. 发明授权

US07449064B2 Method for producing AlN single crystal and AlN single crystal 有权
标题翻译：制造AlN单晶和AlN单晶的方法
公开(公告)号：US07449064B2
公开(公告)日：2008-11-11
申请号：US11682385
申请日：2007-03-06
申请人： Makoto Iwai , Katsuhiro Imai
发明人： Makoto Iwai , Katsuhiro Imai
IPC分类号： C30B11/02
CPC分类号： C30B19/02 , C30B9/10 , C30B29/403
摘要： An AlN single crystal is grown by pressurizing a melt including at least gallium, aluminum and sodium in an atmosphere containing nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature in a range of 850° C. to 1200° C.
摘要翻译：通过在包含氮气的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。优选地，AlN单晶在50atms或更低的氮分压下和在850℃至1200℃的温度范围内生长。

47. 发明申请

US20110287222A1 Group 3B nitride crystal 审中-公开
标题翻译： 3B族氮化物晶体
公开(公告)号：US20110287222A1
公开(公告)日：2011-11-24
申请号：US13136056
申请日：2011-07-21
申请人： Takayuki Hirao , Makoto Iwai , Katsuhiro Imai
发明人： Takayuki Hirao , Makoto Iwai , Katsuhiro Imai
IPC分类号： C01B21/06 , B32B3/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , Y10T428/24355
摘要： A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.
摘要翻译：制备其上形成有氮化镓薄膜的表面上的蓝宝石衬底作为晶种衬底并置于生长容器中。称量镓和钠金属以达到25至32:68至75的摩尔比并加入容器中。将容器放入反应容器中。入口管连接到反应容器。从氮气罐通过压力控制器引入氮气以填充反应容器。当将反应容器的内部压力控制为预定的氮气压力并且设定目标温度使得下部加热器的温度高于上部加热器的温度时，生长氮化镓晶体。结果，提供了具有大晶粒尺寸和低位错密度的13族氮化物晶体。

48. 发明申请

US20070144427A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL 有权
标题翻译：生产AlN单晶和AlN单晶的方法
公开(公告)号：US20070144427A1
公开(公告)日：2007-06-28
申请号：US11682385
申请日：2007-03-06
申请人： Makoto Iwai , Katsuhiro Imai
发明人： Makoto Iwai , Katsuhiro Imai
IPC分类号： C30B11/00 , C30B23/00 , C30B28/12
CPC分类号： C30B19/02 , C30B9/10 , C30B29/403
摘要： An AlN single crystal is grown by pressurizing a melt comprising at least gallium, aluminum and sodium in an atmosphere comprising nitrogen. Preferably, the AIN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature of 850° C. or higher and 1200° C. or lower.
摘要翻译：通过在包含氮气的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。优选地，将AIN单晶在50atms以下的氮分压下，在850℃以上且1200℃以下的温度下生长。

49. 发明授权

US08223543B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08223543B2
公开(公告)日：2012-07-17
申请号：US13193968
申请日：2011-07-29
申请人： Makoto Iwai , Hiroshi Nakamura
发明人： Makoto Iwai , Hiroshi Nakamura
IPC分类号： G11C16/04
CPC分类号： G11C16/3459 , G11C11/56 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0483 , G11C16/06 , G11C16/08 , G11C16/26 , G11C16/3436 , G11C16/3454
摘要： A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.
摘要翻译：存储器包括第一和第二选择栅极晶体管，存储器单元，源极线，位线，连接到作为验证读取的目标的所选存储单元的选定字线，连接的未选择字线到除所选存储单元之外的未选择的存储单元，用于产生提供给所选择的字线的所选择的读取电位并产生大于所选择的读取电位的未被选择的读取电位的电位产生电路，以及控制电路，其通过验证被选择的存储器单元的单元电流属于两个值隔离的三个区域中的哪个区域属于三个组中的一个，将选择的存储单元的阈值电压分类为三个组中的一个当所选择的读取电位为第一值时。

50. 发明申请

US20110299339A1 NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD 有权
标题翻译：非易失性半导体存储器，其读出方法和存储卡
公开(公告)号：US20110299339A1
公开(公告)日：2011-12-08
申请号：US13210431
申请日：2011-08-16
申请人： Makoto Iwai , Yoshihisa Watanabe
发明人： Makoto Iwai , Yoshihisa Watanabe
IPC分类号： G11C16/26
CPC分类号： G11C16/0483 , G11C11/5642 , G11C16/26
摘要： A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.
摘要翻译：非易失性半导体存储器包括：存储单元单元，包括具有电荷累积层和控制电极的多个存储单元，所述存储单元串联电连接; 多个字线，其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路，其在数据读出操作期间，从连接到未选择的存储器的未选择的字线的选择时刻开始，选择连接到所述存储单元的所述存储单元的字线的定时。

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