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    • 42. 发明授权
    • Method of handling a substrate after sputtering and sputtering apparatus
    • 溅射和溅射装置处理基板的方法
    • US06200432B1
    • 2001-03-13
    • US09437227
    • 1999-11-10
    • Masahiko KobayashiNobuyuki Takahashi
    • Masahiko KobayashiNobuyuki Takahashi
    • C23C1434
    • C23C14/58C23C14/541C23C14/566
    • A substrate which has been heated to a predetermined temperature by a heating unit during sputtering is transferred into an unload-lock chamber having a vacuum pump system and a vent gas introducing system. The unload-lock chamber is provided with a cooling stage which makes surface contact with the substrate so as to forcedly cool the substrate to a predetermined temperature. The substrate is placed on the cooling stage and forcedly cooled. After the substrate is cooled to the predetermined temperature or lower, the vent gas introducing system is operated so that the interior of the unload-lock chamber is returned to the atmospheric pressure ambient. Since the substrate under a high temperature condition does not make contact with the atmospheric pressure ambient, film properties are prevented from being varied.
    • 在溅射期间通过加热单元被加热到预定温度的基板被转移到具有真空泵系统和排放气体引入系统的卸载锁定室中。 卸载锁定室设置有冷却台,其与基板表面接触,以将基板强制冷却至预定温度。 将基板放置在冷却台上并强制冷却。 在将基板冷却至预定温度或更低温度之后,排气引入系统被操作,使得卸载锁定室的内部返回到大气压环境。 由于在高温条件下的基板不与大气压环境接触,所以防止了膜性能的变化。
    • 43. 发明授权
    • Hot reflow sputtering method and apparatus
    • 热回流溅射法和设备
    • US06030510A
    • 2000-02-29
    • US151738
    • 1998-09-11
    • Masahiko KobayashiNobuyuki Takahashi
    • Masahiko KobayashiNobuyuki Takahashi
    • C23C14/14C23C14/04C23C14/34C23C14/35C23C14/50C23C14/54C23C14/56H01L21/203H01L21/285H01L21/768
    • C23C14/564C23C14/046C23C14/35C23C14/50C23C14/541H01J37/3405H01L21/76877
    • A method and apparatus for facilitating high-quality hot reflow sputtering with no occurrence of voids while reducing the processing time by rapid heating of the substrate. The method comprises two steps. In the first step, a thin base film 81 of aluminum is formed on the side and bottom surfaces of a minute hole 90 formed in the surface of a substrate 9. Substrate 9 is heated to a first temperature of no more than 100.degree. C. at which it is possible to prevent gaps occurring in the base film 81. In the second step, the hole is filled in with aluminum by depositing a further film of aluminum 82 inside hole 90 and causing it to reflow. Substrate 9 is heated to a second temperature which is higher than the first temperature. The hot reflow sputtering apparatus is equipped with an electrostatic attraction mechanism 43, which uses static electricity to grip substrate 9 against a substrate holder 4 provided with an indentation 40 in the substrate mounting surface thereof, and a pressurizing gas introduction system 42 which introduces a pressurizing gas into the indentation 40. A control unit 47 controls the apparatus so that neither electrostatic attraction mechanism 43 nor pressurizing gas introduction system 42 are operated in the first step. In the second step the pressurizing gas introduction system 42 is operated after the electrostatic attraction mechanism 43 has been operated.
    • 一种用于在不发生空隙的情况下促进高质量热回流溅射的方法和装置,同时通过快速加热衬底减少处理时间。 该方法包括两个步骤。 在第一步骤中,在基板9的表面形成的微小孔90的侧面和底面上形成有薄的铝基底膜81.将基板9加热至不超过100℃的第一温度。 在此可以防止在基膜81中发生间隙。在第二步骤中,通过在孔90内沉积另外的铝82膜并使其回流,用铝填充孔。 将基板9加热到高于第一温度的第二温度。 热回流溅射装置配备有静电吸引机构43,该静电吸引机构43使用静电来将基板9抵靠在其基板安装表面中设置有凹口40的基板保持件4和加压气体导入系统42, 气体进入压痕40.控制单元47控制装置,使得静电吸引机构43和加压气体导入系统42都不在第一步骤中操作。 在第二步骤中,在静电吸引机构43被操作之后,加压气体引入系统42被操作。