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41. 发明授权

US5734949A Process cartridge and image forming apparatus usable with this process cartridge 失效
标题翻译：可与该处理盒一起使用的处理盒和图像形成装置
公开(公告)号：US5734949A
公开(公告)日：1998-03-31
申请号：US754630
申请日：1996-11-21
申请人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
发明人： Shinji Goto , Jun Saito , Hiroyuki Ishii , Masao Ando , Yoshiaki Watanabe , Yuzo Isoda , Masahide Tanoue , Ryukichi Inoue
IPC分类号： G03G21/16 , G03G15/00 , G03G21/00 , G03G21/10 , G03G21/18
CPC分类号： G03G21/1853 , G03G21/1647 , G03G2221/1654 , G03G2221/183 , G03G2221/1884
摘要： A process cartridge is detachably mountable to an image forming apparatus for forming an image on a recording material. The process cartridge includes an image bearing member, a process device for acting on the image bearing member, which includes a developing device for developing an image on the image bearing member, a frame, and a projection disposed on the upper surface of the frame and extending toward the developing device, the projection having (i) an upward inclined surface, (ii) a flat surface continuing from the upper inclined surface, and (iii) a downward inclined surface that is inclined toward the developing device.
摘要翻译：处理盒可拆卸地安装到用于在记录材料上形成图像的图像形成装置。处理盒包括图像承载部件，用于作用在图像承载部件上的处理装置，其包括用于在图像承载部件上显影图像的显影装置，框架和设置在框架的上表面上的突起，以及朝向显影装置延伸，所述突起具有（i）向上倾斜表面，（ii）从所述上倾斜表面延续的平坦表面，以及（iii）向所述显影装置倾斜的向下倾斜表面。

42. 发明授权

US5393961A Air cooling fan arrangement in a microwave heating device 失效
标题翻译：空气冷却风扇布置在微波加热装置中
公开(公告)号：US5393961A
公开(公告)日：1995-02-28
申请号：US069519
申请日：1993-06-01
申请人： Yasuhiro Umekage , Shinichi Sakai , Yoshiaki Watanabe , Hisashi Morikawa , Makoto Mihara
发明人： Yasuhiro Umekage , Shinichi Sakai , Yoshiaki Watanabe , Hisashi Morikawa , Makoto Mihara
IPC分类号： H05B6/80 , H05B6/64
CPC分类号： H05B6/642
摘要： In a microwave heating device, a propeller fan is mounted on a drive shaft of a motor that in vertically positioned parts of a high frequency power supply unit are arranged in the order of a power control semiconductor device and a high-voltage transformer along the direction of revolution of the propeller fan. The motor is secured to a support member formed by a motor cover attached to the casing of the propeller fan. The fan and high frequency power supply unit are mounted to a first frame and a second frame, both of which are bent and connected at a connecting portion and fixed in an approximately "L" shape, while an airflow path is defined by a first guide wall and a second guide wall to cool the parts of the high frequency power supply unit. An airflow path is formed by a plurality of guide walls provided on the two frames, and a communicating hole is provided in proximity to the connecting portion of the two frames. The propeller fan is so arranged as to revolve at a low r.p.m. after stopping the microwave heating.
摘要翻译：在微波加热装置中，螺旋桨式风扇安装在电动机的驱动轴上，在高频电源单元的垂直定位部分沿着方向以功率控制半导体器件和高压变压器的顺序排列的螺旋桨风扇革命。马达被固定到由附接到螺旋桨式风扇的壳体的马达盖形成的支撑构件。风扇和高频电源单元安装在第一框架和第二框架上，第一框架和第二框架都被弯曲并连接在连接部分并固定成大致“L”形，同时气流路径由第一导向件壁和第二引导壁以冷却高频电源单元的部件。由设置在两个框架上的多个引导壁形成气流路径，并且在两个框架的连接部分附近设置有连通孔。螺旋桨风扇布置成以低r.p.m旋转。停止微波加热后。

43. 发明授权

US5097164A Hermetically sealed type dynamic pressure fluid bearing motor 失效
标题翻译：气密式动压流体轴承电机
公开(公告)号：US5097164A
公开(公告)日：1992-03-17
申请号：US458549
申请日：1989-12-28
申请人： Mikio Nakasugi , Yoshiaki Watanabe , Yoshihiko Hirose
发明人： Mikio Nakasugi , Yoshiaki Watanabe , Yoshihiko Hirose
IPC分类号： F16C33/10 , H02K5/10 , H02K5/16 , H02K29/08
CPC分类号： F16C33/10 , H02K29/08 , H02K5/10 , H02K5/1677
摘要： A motor supported by a dynamic pressure fluid bearing supporting a rotatable member by the dynamic pressure of fluid created by rotation is hermetically sealed with respect to the outside. The motor further includes a fixed shaft with the grooves and a rotatable sleeve. The rotatable sleeve is engageable with the fixed shaft and an optical member are mounted on the rotatable shaft.
摘要翻译：由通过由旋转产生的流体的动态压力支撑可旋转构件的动态压力流体轴承支撑的电动机相对于外部气密地密封。马达还包括具有凹槽的固定轴和可旋转的套筒。可旋转套筒可与固定轴接合，光学构件安装在旋转轴上。

44. 发明授权

US5087868A Rotary actuator 失效
标题翻译：旋转执行器
公开(公告)号：US5087868A
公开(公告)日：1992-02-11
申请号：US563866
申请日：1990-08-07
申请人： Takehisa Ishibashi , Shinobu Kakizaki , Yoshiaki Watanabe , Fukashi Kanai
发明人： Takehisa Ishibashi , Shinobu Kakizaki , Yoshiaki Watanabe , Fukashi Kanai
IPC分类号： B60G17/015 , F16F9/46
CPC分类号： F16F9/462 , B60G17/0152
摘要： A rotary actuator is designed for rotatingly drive a rotary body, such as a rotary valve member for adjusting damping force to be created by a variable damping force shock absorber. The rotary actuator takes a layout of a permanent magnet and an electromagnet arranged in vertically spaced relationship. Vertical layout of the permanent magnet and the electromagnet reduces plane area required for installation.

45. 发明授权

US5071779A Method for producing a silicon thin film transistor 失效
标题翻译：生产硅薄膜晶体管的方法
公开(公告)号：US5071779A
公开(公告)日：1991-12-10
申请号：US494037
申请日：1990-03-15
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

46. 发明授权

US5045485A Method for producing amorphous silicon thin film transistor array substrate 失效
标题翻译：非晶硅薄膜晶体管阵列基板的制造方法
公开(公告)号：US5045485A
公开(公告)日：1991-09-03
申请号：US383119
申请日：1989-07-19
申请人： Sakae Tanaka , Yoshiaki Watanabe
发明人： Sakae Tanaka , Yoshiaki Watanabe
IPC分类号： H01L21/77 , H01L21/84
CPC分类号： H01L27/1214
摘要： A method for producing an amorphous silicon thin film transistor array substrate comprising successively coating a gate insulating layer, an amorphous silicon layer and a protective insulating layer on a glass substrate provided with a gate electrode and a gate wiring having a predetermined shape, in such a manner as to not cover the connecting terminal region of the gate wiring. A protective insulating layer is patterned into a predetermined shape. After passing through a predetermined production process to produce an amorphous silicon thin film transistor array, at least a gate wiring and a source wiring are provided. The step of patterning the protective insulating layer comprises covering the connecting terminals of the gate wiring and the exposed region of the glass substrate with a photoresist.

47. 发明授权

US5021850A Silicon thin film transistor 失效
标题翻译：硅薄膜晶体管
公开(公告)号：US5021850A
公开(公告)日：1991-06-04
申请号：US377873
申请日：1989-07-10
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
摘要翻译：硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管，每个硅薄膜晶体管包括绝缘基板，形成在绝缘基板上的栅电极，形成在绝缘基板上的栅绝缘层，栅电极，一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层，形成在一对第一杂质上的本征硅层含有硅层和在一对第一杂质之间的栅极绝缘层包含硅层，以便连接一对第一杂质含硅层，形成在本征硅层上的保护绝缘层，以及形成在源极电极和漏电极该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。

48. 发明授权

US5018880A Dynamic pressure bearing device 失效
标题翻译：动压轴承装置
公开(公告)号：US5018880A
公开(公告)日：1991-05-28
申请号：US372613
申请日：1989-06-28
申请人： Mikio Nakasugi , Yoshiaki Watanabe
发明人： Mikio Nakasugi , Yoshiaki Watanabe
IPC分类号： F16C33/10
CPC分类号： F16C33/107 , F16C17/107
摘要： A dynamic pressure bearing device a relatively rotatable shaft member and sleeve member, accommodating the shaft member, are relatively supported with respect to a thrust direction and a radial direction, and wherein there is provided a circulation passageway for circulating a fluid along at least a part of a thrust surface between the shaft member and the sleeve member.
摘要翻译：容纳轴构件的相对旋转的轴构件和套筒构件的动态压力承载装置相对于推力方向和径向相对地相对地支撑，并且其中设置有循环通道，用于沿至少一部分循环流体在轴构件和套筒构件之间的推力表面。

49. 发明授权

US5005056A Amorphous-silicon thin film transistor array substrate 失效
标题翻译：非晶硅薄膜晶体管阵列基板
公开(公告)号：US5005056A
公开(公告)日：1991-04-02
申请号：US306373
申请日：1989-02-03
申请人： Noboru Motai , Sakae Tanaka , Yoshiaki Watanabe
发明人： Noboru Motai , Sakae Tanaka , Yoshiaki Watanabe
IPC分类号： H01L23/52 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/3205 , H01L27/12 , H01L29/45 , H01L29/78 , H01L29/786
CPC分类号： H01L29/458 , G02F1/1368 , G02F2001/136263 , G02F2202/103
摘要： A reverse staggered amorphous-silicon thin film transistor array substrate includes amorphous silicon thin film transistors in an array, gate wirings interconnecting the gate electrodes of the transistors, and source wirings of a transparent conductive layer connecting the source electrodes. An auxiliary source wiring of the material of the source electrodes of said transistors is provided under the source wiring.
摘要翻译：反向交错的非晶硅薄膜晶体管阵列基板包括阵列中的非晶硅薄膜晶体管，互连晶体管的栅极的栅极布线和连接源电极的透明导电层的源极布线。所述晶体管的源电极的材料的辅助源极布线设置在源极布线的下方。

50. 发明授权

US4979006A Reverse staggered type silicon thin film transistor 失效
标题翻译：反向交错型硅薄膜晶体管
公开(公告)号：US4979006A
公开(公告)日：1990-12-18
申请号：US358035
申请日：1989-05-26
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78669
摘要： A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; and n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.
摘要翻译：反向交错型硅薄膜晶体管包括具有栅电极的基板; 在所述基板上的栅极绝缘层和所述栅电极，所述栅极绝缘层具有晶体管形成部分; 在所述栅极绝缘层的所述晶体管形成部分上与其接触的下层硅膜，所述下层硅膜以第一温度和第一厚度形成; 上层硅膜，形成在所述栅极绝缘层的所述晶体管形成部分上，所述第二温度低于所述第一温度，第二厚度大于所述第一厚度; 和n型硅层在上层硅膜上并与其接触; n型硅层上的源电极; 和n型硅层上的漏电极。

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