专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06852465B2 Photoresist composition for imaging thick films 有权
标题翻译：用于成像厚膜的光刻胶组合物
公开(公告)号：US06852465B2
公开(公告)日：2005-02-08
申请号：US10393925
申请日：2003-03-21
申请人： Ralph R. Dammel , Stephen Meyer , Mark A. Spak
发明人： Ralph R. Dammel , Stephen Meyer , Mark A. Spak
IPC分类号： G03F7/004 , G03F7/016 , G03F7/022 , G03F7/023 , G03F7/30
CPC分类号： G03F7/0226 , G03F7/0048 , G03F7/0166
摘要： The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.
摘要翻译：本发明涉及特别适用于成膜厚膜的光敏光致抗蚀剂组合物，其包含成膜碱溶性树脂，光活性化合物和表面活性剂，其含量范围为约2000ppm至约14,000ppm 全光刻胶。优选地，光致抗蚀剂膜具有大于20微米的厚度。本发明还提供了一种用于涂覆和成像本发明的感光组合物的方法。

42. 发明授权

US06686429B2 Polymer suitable for photoresist compositions 失效
标题翻译：适用于光刻胶组合物的聚合物
公开(公告)号：US06686429B2
公开(公告)日：2004-02-03
申请号：US09854312
申请日：2001-05-11
申请人： Ralph R. Dammel , Raj Sakamuri
发明人： Ralph R. Dammel , Raj Sakamuri
IPC分类号： C08F12042
CPC分类号： G03F7/0395 , C08F222/32 , C08F232/08 , G03F7/0046 , G03F7/0382
摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.
摘要翻译：本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。

43. 发明授权

US06576394B1 Negative-acting chemically amplified photoresist composition 有权
标题翻译：负性化学放大光致抗蚀剂组合物
公开(公告)号：US06576394B1
公开(公告)日：2003-06-10
申请号：US09596098
申请日：2000-06-16
申请人： Pingyong Xu , Ping-Hung Lu , Ralph R. Dammel
发明人： Pingyong Xu , Ping-Hung Lu , Ralph R. Dammel
IPC分类号： G03C1492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/106 , Y10S430/122
摘要： A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted-C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectronic device utilizing such a photoresist composition.
摘要翻译：一种可在碱性介质中显影的化学放大的，负性的，辐射敏感的光致抗蚀剂组合物，光致抗蚀剂包括：a）具有环键羟基的酚醛膜形成聚合物粘合剂树脂; b）形成暴露于辐射后的酸，其量足以引发成膜粘合剂树脂的交联; c）在暴露于通过暴露于辐射产生的步骤b）的酸暴露于酸后形成碳鎓离子的交联剂，其包含醚化的氨基塑料聚合物或低聚物; d）第二交联剂，其暴露于通过暴露于辐射产生的步骤b）的酸形成碳鎓离子，并且其包括1）羟基取代的或2）羟基C 1 -C 4 烷基取代的C 1 -C 12烷基苯酚，其中来自步骤c）和d）的交联剂的总量是有效的交联量; ande）光致抗蚀剂溶剂，以及利用这种光致抗蚀剂组合物制造微电子器件的方法。

44. 发明授权

US06365322B1 Photoresist composition for deep UV radiation 有权
标题翻译：用于深紫外线辐射的光刻胶组合物
公开(公告)号：US06365322B1
公开(公告)日：2002-04-02
申请号：US09455872
申请日：1999-12-07
申请人： Munirathna Padmanaban , Ralph R. Dammel
发明人： Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.
摘要翻译：本发明涉及在深紫外区域敏感的新型光致抗蚀剂组合物，其中光致抗蚀剂性能在光致抗蚀剂的加工环境中不受碱性污染物的不利影响。新型光致抗蚀剂包括聚合物，光活性化合物，碱性化合物，其是在光致抗蚀剂的曝光波长下基本上不吸收的锍或碘鎓化合物和溶剂组合物。本发明还涉及一种用于在深紫外区域中成像这种光致抗蚀剂的方法。

45. 发明授权

US06274295B1 Light-absorbing antireflective layers with improved performance due to refractive index optimization 有权
$Light-absorbing antireflective layers with improved performance due to refractive index optimization$
标题翻译：由于折射率优化而具有改进性能的吸光抗反射层
公开(公告)号：US06274295B1
公开(公告)日：2001-08-14
申请号：US09264616
申请日：1999-03-08
申请人： Ralph R. Dammel , Robert A. Norwood
发明人： Ralph R. Dammel , Robert A. Norwood
IPC分类号： G03F700
CPC分类号： G03F7/091 , Y10S430/151
摘要： The invention consists of a light absorbing top antireflective layer that reduces the swing curve amplitude for photoresist materials used in the semiconductor industry. The coating may be water based but is not necessarily so. The advantage of a water-based coating is its ease of use, since it can be applied without intermixing to the softbaked photoresist, and is removed in the development step, so that process complexity is only minimally increased. One problem that has been associated with the existing non-absorbing antireflective coatings is that the optimum swing curve reduction is only achieved at a very low refractive index. The advantages of a dyed coating are a) that the refractive index of the top coat can additionally be lowered by making use of anomalous dispersion effects if the dye is chosen judiciously, and b) that it is possible to achieve the optimum swing curve reduction at a higher refractive index of the top coat. By a combination of these two effects, the present invention demonstrates a reduction of the swing curve close to the theoretical minimum value, which constitutes a substantial improvement over existing antireflective topcoats.
摘要翻译：本发明包括一种光吸收顶部抗反射层，其减少半导体工业中使用的光致抗蚀剂材料的摆动曲线幅度。涂层可以是水性的，但不一定如此。水性涂料的优点是其易于使用，因为它可以在不与软烘烤的光致抗蚀剂混合的情况下进行应用，并且在显影步骤中被去除，使得仅仅最小程度地提高了工艺复杂性。与现有的非吸收性抗反射涂层相关联的一个问题是仅在非常低的折射率下实现最佳摆动曲线减小。染色涂层的优点是a）如果染色被明智地选择，则可以通过利用异常色散效应来额外降低顶涂层的折射率，以及b）可以实现最佳的摆动曲线减小顶部涂层的折射率较高。通过这两种效果的组合，本发明证明了接近理论最小值的摆动曲线的减小，这相对于现有的抗反射面漆构成了实质的改进。

46. 发明授权

US5614349A Using a Lewis base to control molecular weight of novolak resins 失效
标题翻译：使用路易斯碱控制酚醛清漆树脂的分子量
公开(公告)号：US5614349A
公开(公告)日：1997-03-25
申请号：US997942
申请日：1992-12-29
申请人： M. Dalil Rahman , Daniel P. Aubin , Dana L. Durham , Ralph R. Dammel
发明人： M. Dalil Rahman , Daniel P. Aubin , Dana L. Durham , Ralph R. Dammel
IPC分类号： C08G8/00 , C08G8/08 , C08G8/10 , G03F7/023 , C08G8/04
CPC分类号： C08G8/08 , G03F7/0236
摘要： The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
摘要翻译：本发明提供了通过调节路易斯碱的浓度来制备具有精确和一致分子量的水不溶性水溶性酚醛清漆树脂的方法。还提供了用于由这种酚醛清漆树脂制造光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。

47. 发明申请

US20120219919A1 Composition for Coating over a Photoresist Pattern Comprising a Lactam 审中-公开
标题翻译：用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物
公开(公告)号：US20120219919A1
公开(公告)日：2012-08-30
申请号：US13033912
申请日：2011-02-24
申请人： Muthiah Thiyagarajan , Ralph R. Dammel , Yi Cao , SungEun Hong , WenBing Kang , Clement Anyadiegwu
发明人： Muthiah Thiyagarajan , Ralph R. Dammel , Yi Cao , SungEun Hong , WenBing Kang , Clement Anyadiegwu
IPC分类号： G03F7/26
CPC分类号： G03F7/405
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译：本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH）（NH 2），羧酸和酰胺（CONH 2）表示与聚合物的连接，m = 1-6，n = 1-4。本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分不与去除溶液反应的涂料。

48. 发明申请

US20110086312A1 Positive-Working Photoimageable Bottom Antireflective Coating 审中-公开
标题翻译：正面照相底部防反射涂层
公开(公告)号：US20110086312A1
公开(公告)日：2011-04-14
申请号：US12576622
申请日：2009-10-09
申请人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
发明人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.
摘要翻译：本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。本发明还涉及使用这种组合物的方法。

49. 发明授权

US07923200B2 Composition for coating over a photoresist pattern comprising a lactam 有权
标题翻译：用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物
公开(公告)号：US07923200B2
公开(公告)日：2011-04-12
申请号：US11697804
申请日：2007-04-09
申请人： Muthiah Thiyagarajan , Ralph R. Dammel , Yi Cao , SungEun Hong , WenBing Kang , Clement Anyadiegwu
发明人： Muthiah Thiyagarajan , Ralph R. Dammel , Yi Cao , SungEun Hong , WenBing Kang , Clement Anyadiegwu
IPC分类号： G03F7/40
CPC分类号： G03F7/40 , C09D139/00
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译：本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH）（NH 2），羧酸和酰胺（CONH 2）表示与聚合物的连接，m = 1-6，n = 1-4。本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分不与去除溶液反应的涂料。

50. 发明申请

US20090274974A1 SPIN-ON GRADED K SILICON ANTIREFLECTIVE COATING 审中-公开
标题翻译：旋转分级K硅抗反射涂层
公开(公告)号：US20090274974A1
公开(公告)日：2009-11-05
申请号：US12112221
申请日：2008-04-30
申请人： David Abdallah , Ralph R. Dammel
发明人： David Abdallah , Ralph R. Dammel
IPC分类号： G03F7/004 , B05D5/06 , G03F9/00
CPC分类号： G03F7/0752 , G03F7/091
摘要： Graded absorption silicon based antireflective coating compositions are described.
摘要翻译：描述了分级吸收硅基抗反射涂料组合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式