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41. 发明授权

US06448582B1 High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region 失效
公开(公告)号：US06448582B1
公开(公告)日：2002-09-10
申请号：US09666231
申请日：2000-09-21
申请人： Jerry M. Woodall , Robert D. Koudelka
发明人： Jerry M. Woodall , Robert D. Koudelka
IPC分类号： H01L2715
CPC分类号： H01L33/02 , B82Y10/00 , B82Y20/00 , H01S5/041 , H01S5/2009
摘要： A light emitting device is constructed so as to provide a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission. In certain embodiments the first stimulus includes an absence of an electrical signal applied between the second part and the third part, and the second stimulus comprises a presence of the electrical signal applied between the second part and the third part. In other embodiments the first stimulus includes a change in an electric field in the second part that is generated by optically induced electron-hole pairs in the second part, and the second stimulus includes an absence of the change in the electric field. In another embodiment the reverse is true. In certain embodiments the first or second stimulus can be the presence of modulating light incident on the second part and a resultant decrease in band bending. The first part can include, by example, a light emitting diode, a laser diode, a resonant cavity LED, or a vertical cavity surface emitting laser device. In another, all optical embodiment the first part includes a material that, in response to optical pumping, provides a photoluminescent emission. The second part can include a resonant tunneling structure or a potential barrier structure formed by compositional grading or impurity concentration grading. The third part can include a low temperature grown material and/or a Schottky barrier contact. It is shown that embodiments of this invention are capable of exhibiting optical gain, and an optical semiconductor light emitting device with optical gain (SLEDOG) is thus made possible.

42. 发明授权

US5019530A Method of making metal-insulator-metal junction structures with adjustable barrier heights 失效
标题翻译：制造具有可调节阻挡高度的金属 - 绝缘体 - 金属结合结构的方法
公开(公告)号：US5019530A
公开(公告)日：1991-05-28
申请号：US512245
申请日：1990-04-20
申请人： Alan W. Kleinsasser , Jerry M. Woodall
发明人： Alan W. Kleinsasser , Jerry M. Woodall
IPC分类号： H01L49/02 , H01L45/00
CPC分类号： H01L45/00 , Y10S148/139 , Y10S148/14 , Y10S148/142
摘要： A method and structures are described for fabricating junctions having metal electrodes separated by polycrystalline barriers with arbitrarily-chosen but controlled barrier height and shape is accomplished by varying the composition and doping of polycrystalline multinary compound semiconductor materials in the barrier, hence varying the Fermi level pinning position such that the Fermi level is fixed and controlled at and everywhere in between the two metal-insulator interfaces. It is known that Schottky barrier heights at metal/compound semiconductor interfaces are determined by a Fermi level pinning mechanism rather than by the electronic properties of the applied metallurgy. The present invention exploits the knowledge that the same type of Fermi level pinning occurs at semiconductor dislocations and grain boundaries. The present invention uses polycrystalline compound semiconductor alloys in which the pinning position is varied over a large range in metal/semiconductor structures. The structures are composed of sandwiches of metal, compound semiconductor and metal. Tunneling currents are determined by barrier height, controlled by semiconductor alloy composition, and semiconductor thickness. The energy barrier in the polycrystalline material can be uniform throughout, due to the uniformity of pinning position at both the metal/semiconductor interface and the grain boundaries.

43. 发明授权

US4745204A Process for producing aluminum alkoxide or aluminum aryloxide 失效
标题翻译：生产烷氧基铝或氧化铝的方法
公开(公告)号：US4745204A
公开(公告)日：1988-05-17
申请号：US871046
申请日：1986-06-05
申请人： Jerome J. Cuomo , Pamela A. Leary , Jerry M. Woodall
发明人： Jerome J. Cuomo , Pamela A. Leary , Jerry M. Woodall
IPC分类号： C07B41/02 , C07B31/00 , C07C27/00 , C07C29/70 , C07C31/32 , C07C37/66 , C07C39/235 , C07C67/00 , C07F5/06
CPC分类号： C07C37/66 , C07C29/70
摘要： Aluminum alkoxide or aluminum aryloxide is produced by dissolving aluminum in gallium and/or gallium-based alloy wherein the gallium and/or gallium-based alloy is in a liquid form. The aluminum is then reacted with an organic compound having at least one reactive hydroxyl group to thereby obtain the aluminum alkoxide or aluminum aryloxide.
摘要翻译：通过将铝溶解在其中镓和/或镓基合金为液体形式的镓和/或镓基合金中来制备烷氧基铝或铝氧化铝。然后使铝与具有至少一个反应性羟基的有机化合物反应，从而得到烷氧基铝或芳氧化铝。

44. 发明授权

US4525731A Semiconductor conversion of optical-to-electrical energy 失效
标题翻译：光电能的半导体转换
公开(公告)号：US4525731A
公开(公告)日：1985-06-25
申请号：US454784
申请日：1982-12-30
申请人： Terry I. Chappell , Thomas N. Jackson , Jerry M. Woodall
发明人： Terry I. Chappell , Thomas N. Jackson , Jerry M. Woodall
IPC分类号： H01L31/10 , H01L27/144 , H01L31/0352 , H01L31/101 , H01L31/109 , H01L27/14 , H01L29/88 , H01L31/06
CPC分类号： H01L27/1446 , H01L31/0352 , H01L31/101 , H01L31/109
摘要： Optical-to-electrical conversion is accomplished using an undoped region bounded by a tunneling junction of the order of the mean free path of an electron. A number of regions are assembled in series with larger thickness away from the light incident surface. The thickness and doping of the regions for maximum effectiveness in monochromatic light are tailored to produce similar quantities of carriers from the light. A nine section GaAs structure with 50 .ANG. n.sup.+ and p.sup.+ tunneling bounding regions has a 90% quantum efficiency and delivers a 5 volt output with a 0.35 picosecond transit time.
摘要翻译：使用由电子平均自由程的阶数的隧道结界定的未掺杂区域实现光电转换。许多区域与光入射表面相比较大地组合成较大的厚度。针对在单色光中最大效能的区域的厚度和掺杂被定制以从光产生相似量的载流子。具有50个ANGSTROM n +和p +隧道界限区域的九段GaAs结构具有90％的量子效率，并以0.35皮秒的传输时间提供5伏输出。

45. 发明授权

US4436768A Refractory structure and process for the preparation thereof 失效
$Refractory structure and process for the preparation thereof$
标题翻译：耐火结构及其制备方法
公开(公告)号：US4436768A
公开(公告)日：1984-03-13
申请号：US411218
申请日：1982-08-25
申请人： John L. Freeouf , William J. Haag , Jerry M. Woodall
发明人： John L. Freeouf , William J. Haag , Jerry M. Woodall
IPC分类号： C04B35/583 , C04B41/00 , C04B41/45 , C04B41/51 , C04B41/53 , C04B41/80 , C04B41/81 , C04B41/88 , C04B41/91 , C23C14/24 , B05D3/02 , B05D5/00
CPC分类号： C23C14/243 , C04B35/583 , C04B41/0036 , C04B41/4505 , C04B41/5133 , C04B41/53 , C04B41/80 , C04B41/81 , C04B41/88 , C04B41/91
摘要： A refractory compound structure comprising a substrate of a compound which is a combination of a refractory and/or metallic element and a nonmetallic element and an elemental layer of the refractory and/or metallic element on the substrate is formed by heating the refractory compound in a vacuum at a decomposition temperature for the refractory compound.
摘要翻译：包含耐火材料和/或金属元素和非金属元素的组合的化合物的基材和基材上的耐火材料和/或金属元素的元素层的耐火复合结构体是通过将耐火材料在在耐火化合物的分解温度下进行真空。

46. 发明授权

US4358291A Solid state renewable energy supply 失效
标题翻译：固态可再生能源供应
公开(公告)号：US4358291A
公开(公告)日：1982-11-09
申请号：US221650
申请日：1980-12-31
申请人： Jerome J. Cuomo , Jerry M. Woodall
发明人： Jerome J. Cuomo , Jerry M. Woodall
IPC分类号： F24V30/00 , C01B3/06 , C01B3/08 , C10L3/00 , C01B1/07 , C25C3/06
CPC分类号： C01B3/08 , Y02E60/36 , Y02P20/133 , Y02P20/134
摘要： A solid state renewable energy supply is provided by the oxidation of a passivating oxide forming solid state material in the presence of oxygen under the control of a passivating oxide preventing agent forming thereby an oxide reaction product, heat and hydrogen. The oxide reaction product is then electrolytically or thermo chemically reduced to recover the solid state material. Aluminum is hydrolized in the presence of gallium producing aluminum oxide, heat and hydrogen. The aluminum oxide is in turn electrolyzed back to aluminum.
摘要翻译：固态可再生能源通过氧化形成固态材料的钝化氧化物在氧的存在下在钝化氧化物防止剂形成的控制下由氧化反应产物，热和氢提供。然后将氧化物反应产物电解或热化学还原以回收固态材料。铝在产生镓的氧化铝，热和氢的存在下水解。氧化铝又被电解回到铝。

47. 发明授权

US4352117A Electron source 失效
标题翻译：电子源
公开(公告)号：US4352117A
公开(公告)日：1982-09-28
申请号：US155729
申请日：1980-06-02
申请人： Jerome J. Cuomo , Russell W. Dreyfus , Jerry M. Woodall
发明人： Jerome J. Cuomo , Russell W. Dreyfus , Jerry M. Woodall
IPC分类号： H01J1/30 , H01J1/308 , H01J1/34 , H01L27/14
CPC分类号： H01J1/308
摘要： A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.
摘要翻译：通过在绝大多数表面上提供具有电子约束势垒的半导体器件，在固态材料中构造高亮度，基本上单能量的电子源，该阻挡层具有暴露半导体本体的相对较小的开口，与具有比半导体中激发的电子的能量低的功函数的半导体本体接触。在这种结构中，在半导体中产生的空穴 - 电子对的电子被排斥，复合被屏障抑制，除了在相对小的开口中，它们通过较低的功函数材料注入到周围环境中。可以通过照射或电喷射来产生空穴 - 电子对。电子源可用于高亮度源，数字通信，阴极射线管电子源和扫描电子显微镜等应用。

48. 发明授权

US4295002A Heterojunction V-groove multijunction solar cell 失效
标题翻译：异相结V型多结太阳能电池
公开(公告)号：US4295002A
公开(公告)日：1981-10-13
申请号：US161820
申请日：1980-06-23
申请人： Terry I. Chappell , Jerry M. Woodall
发明人： Terry I. Chappell , Jerry M. Woodall
IPC分类号： H01L31/04 , H01L25/04 , H01L27/142 , H01L31/0352 , H01L31/043 , H01L31/047 , H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/10 , H01L31/06
CPC分类号： H01L31/0725 , H01L31/035281 , H01L31/043 , H01L31/047 , H01L31/0735 , H01L31/074 , Y02E10/544
摘要： A solar cell is disclosed with V-grooves which are series connected, but electrically isolated, indirect bandgap solar cells which are responsive to different light frequencies on both sides of a semi-insulating optically transparent substrate. The device has a very high conversion efficiency of approximately 40% and high open-circuit voltage and low series resistance. An exemplary structure in accordance with this disclosure has a series of silicon V-groove cells on one side and another series of GaAlAs V-groove cells on the other side. The cells are of generally trapezoidal cross-section. The difference between the characteristics of the Si cell and the GaAlAs cell is matched by control of the number of V-grooves.
摘要翻译：公开了一种太阳能电池，其具有串联连接但电绝缘的间接带隙太阳能电池，其对半绝缘光学透明基板两侧的不同光频有反应。该器件具有大约40％的非常高的转换效率和高开路电压和低串联电阻。根据本公开的示例性结构在一侧具有一系列硅V槽单元，另一侧具有另一系列GaAlAs V沟槽单元。电池通常是梯形的横截面。通过控制V槽的数量来匹配Si电池和GaAlAs电池的特性之间的差异。

49. 发明授权

US4276137A Control of surface recombination loss in solar cells 失效
标题翻译：太阳能电池表面复合损失的控制
公开(公告)号：US4276137A
公开(公告)日：1981-06-30
申请号：US59855
申请日：1979-07-23
申请人： Harold J. Hovel , Jerry M. Woodall
发明人： Harold J. Hovel , Jerry M. Woodall
IPC分类号： H01L31/04 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02168 , Y02E10/50
摘要： Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating.
摘要翻译：通过在半导体的表面处的带状弯曲而产生的太阳能电池中的表面复合，其又由引导表面的费米能级的缺陷状态引起，可以通过施加表面层来改善，该表面层可以是具有经过氢退火，该层也可用作抗反射涂层。

50. 发明申请

US20110048537A1 METHOD OF FABRICATING A SEMICONDUCTOR JUNCTION 审中-公开
标题翻译：制造半导体结的方法
公开(公告)号：US20110048537A1
公开(公告)日：2011-03-03
申请号：US12827390
申请日：2010-06-30
申请人： Jerry M. Woodall , Kyle H. Montgomery
发明人： Jerry M. Woodall , Kyle H. Montgomery
IPC分类号： H01L31/0296 , H01L21/20 , H01L29/24
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02477 , H01L21/02505 , H01L21/0256 , H01L21/0262 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L33/26 , H01L33/28 , Y02E10/50
摘要： A method of fabricating a semiconductor junction is disclosed. The method includes forming a quaternary heterovalent compound semiconductor alloy epilayer, determining a doping characteristic of the epilayer, and forming a secondary layer on the epilayer to create a semiconductor junction, the secondary layer being doped in response to the determined doping characteristic of the epilayer. Solar cell and light emitting diode designs are also disclosed.
摘要翻译：公开了制造半导体结的方法。该方法包括形成四价异价化合物半导体合金外延层，确定外延层的掺杂特性，以及在外延层上形成第二层以产生半导体结，根据所确定的外延层的掺杂特性，对二次层进行掺杂。还公开了太阳能电池和发光二极管设计。

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