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41. 发明授权

US07387892B2 Biosensor using microdisk laser 有权
标题翻译：生物传感器使用微盘激光
公开(公告)号：US07387892B2
公开(公告)日：2008-06-17
申请号：US10930758
申请日：2004-09-01
申请人： Peter Kiesel , Noble M. Johnson , Meng H. Lean , H. Ben Hsieh , Michael A. Kneissl
发明人： Peter Kiesel , Noble M. Johnson , Meng H. Lean , H. Ben Hsieh , Michael A. Kneissl
IPC分类号： C12M1/34
CPC分类号： B82Y20/00 , G01N33/54373 , H01S5/041 , H01S5/0607 , H01S5/1075 , H01S5/34333 , H01S5/4025
摘要： A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.
摘要翻译：用于检测生物或化学物质存在的紧凑型传感器包括微盘激光器和波长偏移检测器。微型体激光器涂覆有与目标分析物优先结合的生物或化学识别元件。因为识别元件和目标分析物粘附到微盘激光器的侧壁表面，所以它们增加了激光器的有效直径，这将输出波长移动了可检测的量。波长偏移的存在表示目标分析物的存在，并且波长漂移的大小对应于微盘激光器的侧壁表面上的目标分析物的质量负载。

42. 发明授权

US07242705B2 Grating-outcoupled cavity resonator having uni-directional emission 有权
标题翻译：具有单向发射的光栅耦合谐振腔
公开(公告)号：US07242705B2
公开(公告)日：2007-07-10
申请号：US10736602
申请日：2003-12-17
申请人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen
发明人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen
IPC分类号： H01S3/07 , H01S5/00
CPC分类号： H01S5/1075 , B82Y20/00 , H01S5/0213 , H01S5/1042 , H01S5/1231 , H01S5/187 , H01S5/34333
摘要： A grating-outcoupled microcavity disk resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a grating region in the plane of the grating-outcoupled microcavity disk resonator. The grating region provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission.
摘要翻译：光栅耦合的微腔光盘谐振器具有存在于近圆形谐振器中的耳语画廊模式。通过在光栅输出耦合的微腔盘谐振器的平面中提供光栅区域来将光输出耦合。光栅区域提供与顺时针和逆时针耳语画廊模式对称地相互作用的输出耦合或损失机制，从而使谐振器能够进行表面发射。

43. 发明授权

US06655964B2 Low cost integrated out-of-plane micro-device structures and method of making 有权
公开(公告)号：US06655964B2
公开(公告)日：2003-12-02
申请号：US09780185
申请日：2001-02-09
申请人： David K. Fork , Christopher L. Chua , Koenraad F. Van Schuylenbergh , Noble M. Johnson , David K. Biegelsen
发明人： David K. Fork , Christopher L. Chua , Koenraad F. Van Schuylenbergh , Noble M. Johnson , David K. Biegelsen
IPC分类号： H01R1200
CPC分类号： H01L27/08 , H01F17/0033 , H01F41/041 , H01L21/4853 , H05K3/4092
摘要： Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. In one method the elastic members have graded perforations for controlling rate of release. In another method and structure, a layout enables the contact landing area to be increased. The high yield structures may be used in numerous electronic applications such as filter circuits.

44. 发明授权

US06355497B1 Removable large area, low defect density films for led and laser diode growth 有权
标题翻译：用于LED和激光二极管生长的可拆卸大面积，低缺陷密度膜
公开(公告)号：US06355497B1
公开(公告)日：2002-03-12
申请号：US09490286
申请日：2000-01-18
申请人： Linda T. Romano , Brent S. Krusor , Christopher L. Chua , Noble M. Johnson , Rose M. Wood , Jack Walker
发明人： Linda T. Romano , Brent S. Krusor , Christopher L. Chua , Noble M. Johnson , Rose M. Wood , Jack Walker
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02373 , H01L21/0242 , H01L21/02532 , H01L33/0079
摘要： A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabricating the nearly lattice matched substrate and devices is disclosed. Enhanced ELOG methods are used to create low defect density GaN films. The GaN films are used to grow Group-III nitride LEDs and laser diodes.
摘要翻译：公开了一种基于蚀刻释放层的技术，用于将近乎格子匹配的基板与基底基板分离。公开了用于III族氮化物半导体器件的外延生长的几乎晶格匹配的衬底以及制造近晶格匹配衬底和器件的方法。增强的ELOG方法用于产生低缺陷密度GaN膜。 GaN薄膜用于生长III族氮化物LED和激光二极管。

45. 发明申请

US20140011345A1 METHOD OF GROWING EPITAXIAL LAYERS ON A SUBSTRATE 有权
标题翻译：在基材上生长外延层的方法
公开(公告)号：US20140011345A1
公开(公告)日：2014-01-09
申请号：US13523670
申请日：2012-06-14
申请人： Christopher L. Chua , Mark R. Teepe , Thomas Wunderer , Zhihong Yang , Noble M. Johnson , Clifford Knollenberg
发明人： Christopher L. Chua , Mark R. Teepe , Thomas Wunderer , Zhihong Yang , Noble M. Johnson , Clifford Knollenberg
IPC分类号： H01L21/02
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , C30B33/00 , H01L21/02389 , H01L21/0254 , H01L21/02661
摘要： An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.
摘要翻译：外延生长方法包括对本体结晶氮化铝（AlN）衬底的表面进行等离子体处理，随后在富含氨的环境中将衬底加热至高于1000℃的温度至少5分钟，而无需外延生长。在表面加热后，在表面上外延生长III族氮化物层。

46. 发明授权

US08330144B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08330144B2
公开(公告)日：2012-12-11
申请号：US13550504
申请日：2012-07-16
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

47. 发明授权

US08263955B2 Causing relative motion 有权
标题翻译：造成相对运动
公开(公告)号：US08263955B2
公开(公告)日：2012-09-11
申请号：US12337796
申请日：2008-12-18
申请人： Peter Kiesel , Markus Beck , Michael Bassler , Noble M. Johnson
发明人： Peter Kiesel , Markus Beck , Michael Bassler , Noble M. Johnson
IPC分类号： G01N21/55 , G01N21/25 , G01N21/00
CPC分类号： G01N15/1429 , G01N15/1459 , G01N21/532 , G01N21/645 , G01N21/65 , G01N2015/1075
摘要： Sensors can be used to obtain encoded sensing results from objects that have nonuniform relative motion. A photosensor or impedance-based sensor, for example, can obtain sensing results from objects that have relative motion within a sensing region relative to the sensor, with the relative motion being, for example, periodically varying, randomly varying, chirp-varying, or modulated relative motion that completes at least one modulation cycle within the sensing region. Relative motion can be caused by varying objects' speed and/or direction or by controlling flow of fluid carrying objects, movement of a channel, movement of a support structure, movement of a sensor, and/or pattern movement. A fluidic implementation can include shaped channel wall parts and/or a displacement component causing time-varying lateral displacement. A support structure implementation can include a scanner device and a rotary device that respectively control scanning and rotating movement of a movable support structure or of a sensor.
摘要翻译：传感器可用于从具有不均匀相对运动的物体获得编码的感测结果。例如，光传感器或基于阻抗的传感器可以从相对于传感器的感测区域内具有相对运动的物体获得感测结果，相对运动例如是周期性变化的，随机变化的线性调频脉冲变化或调制的相对运动，其在感测区域内完成至少一个调制周期。可以通过改变物体的速度和/或方向或通过控制流体携带物体的流动，通道的移动，支撑结构的运动，传感器的运动和/或图案运动来引起相对运动。流体实现可以包括形成通道壁部分和/或引起时变横向位移的位移部件。支撑结构实现可以包括分别控制可移动支撑结构或传感器的扫描和旋转运动的扫描器装置和旋转装置。

48. 发明授权

US08247249B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08247249B2
公开(公告)日：2012-08-21
申请号：US12791552
申请日：2010-06-01
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

49. 发明授权

US08153950B2 Obtaining sensing results and/or data in response to object detection 有权
标题翻译：获取响应于物体检测的感测结果和/或数据
公开(公告)号：US08153950B2
公开(公告)日：2012-04-10
申请号：US12337771
申请日：2008-12-18
申请人： Peter Kiesel , Markus Beck , Joerg Martini , Michael Bassler , Noble M. Johnson
发明人： Peter Kiesel , Markus Beck , Joerg Martini , Michael Bassler , Noble M. Johnson
IPC分类号： G01J1/42 , F21V9/16 , G01N21/25
CPC分类号： G01J3/2803 , G01J3/02 , G01J3/027 , G01N15/12 , G01N15/1429 , G01N15/1459 , G01N2015/1075 , G01N2021/1734
摘要： An encoder/sensor can obtain sensing results from objects in an encoding/sensing region; a trigger detector can respond to objects in a trigger detection region, providing respective trigger signals; and a relative motion component can cause relative motion of objects into the trigger detection region, from it into the encoding/sensing region, and within the encoding/sensing region. In response to an object's trigger signal, control circuitry can cause the encoder/sensor and/or the relative motion component to operate so that the encoder/sensor obtains sensing results indicating a time-varying waveform and processing circuitry can obtain data from the sensing results indicating a time-varying waveform. The time-varying waveform can include information resulting from the relative motion within the encoding/sensing region. The encoder/sensor and trigger detector can be implemented, for example, with discrete components or as sets of cells in a photosensing array on an integrated circuit.
摘要翻译：编码器/传感器可以从编码/感测区域中的对象获得感测结果; 触发检测器可以响应触发检测区域中的对象，提供相应的触发信号; 并且相对运动分量可以引起物体进入触发检测区域的相对运动，从而进入编码/感测区域，并且在编码/感测区域内。响应于物体的触发信号，控制电路可以使编码器/传感器和/或相对运动分量运行，使得编码器/传感器获得指示时变波形的感测结果，并且处理电路可以从感测结果获得数据表示时变波形。时变波形可以包括由编码/感测区域内的相对运动产生的信息。编码器/传感器和触发检测器可以例如利用集成电路中的光敏阵列中的分立组件或单元组来实现。

50. 发明授权

US08000371B2 Vertical surface emitting semiconductor device 有权
标题翻译：垂直表面发射半导体器件
公开(公告)号：US08000371B2
公开(公告)日：2011-08-16
申请号：US12564264
申请日：2009-09-22
申请人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
发明人： Andre Strittmatter , Christopher L. Chua , Peter Kiesel , Noble M. Johnson
IPC分类号： H01S3/091
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译：半导体发光器件包括泵浦光源，增益结构和输出耦合镜。增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。分布式布拉格反射器在增益结构内引起内部反射。输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。倍增结构可以设置在增益结构和输出耦合镜之间。可以实现深紫外光谱中的输出波长。

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