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41. 发明申请

US20130141823A1 RC-Triggered ESD Clamp Device With Feedback for Time Constant Adjustment 有权
标题翻译： RC触发ESD钳位装置，具有时间常数调整反馈
公开(公告)号：US20130141823A1
公开(公告)日：2013-06-06
申请号：US13312047
申请日：2011-12-06
申请人： James P. Di Sarro , Robert J. Gauthier, JR. , Tom C. Lee , Junjun Li , Souvick Mitra
发明人： James P. Di Sarro , Robert J. Gauthier, JR. , Tom C. Lee , Junjun Li , Souvick Mitra
IPC分类号： H02H9/04 , G06F17/50
CPC分类号： H02H9/046
摘要： Methods for responding to an electrostatic discharge (ESD) event on a voltage rail, ESD protection circuits, and design structures for an ESD protection circuit. An RC network of the ESD protection circuit includes a capacitor coupled to a field effect transistor at a node. The node of the RC network is coupled with an input of the inverter. The field-effect transistor is coupled with an output of the inverter. In response to an ESD event, a trigger signal is supplied from the RC network to the input of the inverter, which drives a clamp device to discharge current from the ESD event from the voltage rail. An RC time constant of the RC network is increased in response to the ESD event to sustain the discharge of the current by the clamp device.
摘要翻译：用于响应电压轨上的静电放电（ESD）事件，ESD保护电路以及ESD保护电路的设计结构的方法。 ESD保护电路的RC网络包括耦合到节点处的场效应晶体管的电容器。 RC网络的节点与逆变器的输入端相连。场效应晶体管与反相器的输出端相连。响应于ESD事件，触发信号从RC网络提供给逆变器的输入，该驱动器驱动钳位装置以从ESD电压放电来自电压轨。响应于ESD事件，RC网络的RC时间常数增加以维持钳位装置的电流放电。

42. 发明授权

US08384125B2 Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology 有权
标题翻译：用于SOI技术的可控硅整流器（SCR）结构的结构和方法
公开(公告)号：US08384125B2
公开(公告)日：2013-02-26
申请号：US13035549
申请日：2011-02-25
申请人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra
发明人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra
IPC分类号： H01L29/66
CPC分类号： H01L29/7436 , H01L27/0259 , H01L29/861
摘要： A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.
摘要翻译：设计结构体现在用于设计，制造或测试设计的机器可读介质中。该设计结构包括一个P + -N体二极管和一个N + -P体二极管。 P + -N体二极管和N + -P体二极管横向集成。

43. 发明授权

US07943438B2 Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology 有权
标题翻译：用于SOI技术的可控硅整流器（SCR）结构的结构和方法
公开(公告)号：US07943438B2
公开(公告)日：2011-05-17
申请号：US12031084
申请日：2008-02-14
申请人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra
发明人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra
IPC分类号： H01L21/332
CPC分类号： H01L29/7436 , H01L27/0259 , H01L29/861
摘要： A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.
摘要翻译：设计结构体现在用于设计，制造或测试设计的机器可读介质中。该设计结构包括一个P + -N体二极管和一个N + -P体二极管。 P + -N体二极管和N + -P体二极管横向集成。

44. 发明申请

US20120119257A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF FABRICATING SAME 有权
标题翻译：静电放电保护装置及其制造方法
公开(公告)号：US20120119257A1
公开(公告)日：2012-05-17
申请号：US13361051
申请日：2012-01-30
申请人： Robert J. Gauthier, JR. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
发明人： Robert J. Gauthier, JR. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
IPC分类号： H01L29/73
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译：包括硅控制整流器的集成电路的硅控制整流器和静电放电保护装置。硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为在平行于水平面的单个水平方向上。

45. 发明授权

US07399665B2 Electrostatic discharge protection device and method of fabricating same 有权
标题翻译：静电放电保护装置及其制造方法
公开(公告)号：US07399665B2
公开(公告)日：2008-07-15
申请号：US11781370
申请日：2007-07-23
申请人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
发明人： Robert J. Gauthier, Jr. , Junjun Li , Souvick Mitra , Mahmoud A. Mousa , Christopher Stephen Putnam
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/7436 , H01L21/84 , H01L27/0262 , H01L27/1203
摘要： A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
摘要翻译：硅控制整流器，制造硅控制整流器的方法和使用硅控制整流器作为集成电路的静电放电保护器件。硅控制整流器包括形成在硅层中的硅体，其与绝缘体上硅衬底的掩埋氧化物层直接物理接触，硅层的顶表面限定水平面; 并且形成在硅体的第一区域中的硅控制整流器的阳极和形成在硅体的相对的第二区域中的硅控制整流器的阴极，其中阳极和阴极之间的电流路径仅为在平行于水平面的单个水平方向上。

46. 发明申请

US20080237721A1 STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 有权
标题翻译：具有可调触发电压的多器件半导体器件的均匀触发的结构和电路技术
公开(公告)号：US20080237721A1
公开(公告)日：2008-10-02
申请号：US11692481
申请日：2007-03-28
申请人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L23/60
CPC分类号： H01L27/0277 , H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：外部电流注入源被提供给多指半导体器件的各个指状物，以跨多个指状物提供相同的触发电压。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

47. 发明申请

US20070285853A1 RC-Triggered Power Clamp Suppressing Negative Mode Electrostatic Discharge Stress 失效
标题翻译： RC触发电源钳位抑制负模式静电放电应力
公开(公告)号：US20070285853A1
公开(公告)日：2007-12-13
申请号：US11422608
申请日：2006-06-07
申请人： Robert J. Gauthier , Dimitrios K. Kontos , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Robert J. Gauthier , Dimitrios K. Kontos , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H02H9/00
CPC分类号： H02H9/046
摘要： An electrostatic discharge (ESD) power clamp circuit including a RC-delay element coupled to a plurality of serialized inverter elements with a power clamp element and an ESD-triggered keeper device coupled to the plurality of inverters. During negative mode ESD events, the ESD-triggered keeper device is activated and assists the power clamp element to pull up and strongly conduct current to protect the circuit. Additionally, a method of ESD protection in a circuit is provided. The method includes coupling a RC-delay element to an input of a plurality of serialized inverter elements, coupling an output of the plurality of serialized inverters with an ESD-triggered keeper device and a power clamp element, triggering the ESD-triggered keeper device to turn on during negative ESD events and conducting current by the power clamp element with assistance of the ESD-triggered keeper device to protect the circuit as a result of negative ESD events.
摘要翻译：一种静电放电（ESD）功率钳位电路，其包括耦合到多个串联反相器元件的RC延迟元件，其具有耦合到所述多个逆变器的功率钳位元件和ESD触发的保持器装置。在负模式ESD事件期间，ESD触发的保护装置被激活，并且帮助电源钳位元件上拉并强烈地传导电流以保护电路。另外，提供了电路中ESD保护的方法。该方法包括将RC延迟元件耦合到多个串联反相器元件的输入端，将多个串联反相器的输出与ESD触发的保持器装置和功率钳位元件耦合，将ESD触发的保持器装置触发在ESD ESD事件期间接通电源，并通过ESD触发的保护装置的辅助，通过电源钳位元件传导电流，以保护电路由于负ESD事件。

48. 发明申请

US20090108289A1 DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 有权
标题翻译：具有可调触发电压的多功能半导体器件的均匀触发设计结构
公开(公告)号：US20090108289A1
公开(公告)日：2009-04-30
申请号：US11931517
申请日：2007-10-31
申请人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L27/06
CPC分类号： H01L27/0266 , H01L27/0259 , H01L27/0727 , H01L27/0817
摘要： A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：提供了一种用于跨多个指状物提供相同触发电压的电路的设计结构，其包括表示连接到多指半导体器件的各个指状物的外部电流注入源的数据。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

49. 发明授权

US07826185B2 Structure and circuit technique for uniform triggering of multifinger semiconductor devices with tunable trigger voltage 有权
标题翻译：用于均匀触发具有可调谐触发电压的多光子半导体器件的结构和电路技术
公开(公告)号：US07826185B2
公开(公告)日：2010-11-02
申请号：US11692481
申请日：2007-03-28
申请人： Michel J. Abou-Khalil , Robert Gauthier, Jr. , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier, Jr. , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H02H9/00 , H01C7/12 , H02H1/00 , H02H1/04 , H02H3/22 , H02H9/06
CPC分类号： H01L27/0277 , H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：外部电流注入源被提供给多指半导体器件的各个指状物，以跨多个指状物提供相同的触发电压。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

50. 发明授权

US07714356B2 Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltage 有权
标题翻译：具有可调触发电压的多光子半导体器件均匀触发的设计结构
公开(公告)号：US07714356B2
公开(公告)日：2010-05-11
申请号：US11931517
申请日：2007-10-31
申请人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L27/06
CPC分类号： H01L27/0266 , H01L27/0259 , H01L27/0727 , H01L27/0817
摘要： A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：提供了一种用于跨多个指状物提供相同触发电压的电路的设计结构，其包括表示连接到多指半导体器件的各个指状物的外部电流注入源的数据。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

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