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41. 发明授权

US06469436B1 Radiation shielding for field emitters 失效
标题翻译：场发射器的辐射屏蔽
公开(公告)号：US06469436B1
公开(公告)日：2002-10-22
申请号：US09483713
申请日：2000-01-14
申请人： Terry N. Williams , J. Brett Rolfson
发明人： Terry N. Williams , J. Brett Rolfson
IPC分类号： H01J1304
CPC分类号： H01J3/022 , H01J31/127 , H01J2201/02
摘要： Structures and methods are provided for shielding field emitter devices from radiation. In one exemplary embodiment, a shielding layer inhibits radiation from degrading field emitter devices while exerting a predetermined force upon the field emitter devices so as to restrain from damaging the structure of the devices or affect the devices' electronic or electrical performance. In another exemplary embodiment, the field emitter under the protection of the shielding layer is capable of sustaining structural equilibrium. In yet another embodiment, the field emitter is capable of sustaining structural elasticity. In a further embodiment, the shielding layer may be comprised of tetratantalum boride; this compound inhibits radiation from degrading field emitter devices while exerting a predetermined force upon the field emitter devices so as to restrain from damaging the structure of the devices or affect the devices electronic or electrical performance; in another embodiment, the field emitter under the protection of the tetratantalum boride layer is capable of sustaining structural equilibrium; in another embodiment, the field emitter is capable of sustaining structural elasticity under the protection of the tetratantalum boride layer.
摘要翻译：提供了用于屏蔽场发射器件免受辐射的结构和方法。在一个示例性实施例中，屏蔽层在对场发射器件施加预定的力的同时抑制辐射降解场致发射器件，以便抑制损坏器件的结构或影响器件的电子或电气性能。在另一示例性实施例中，在屏蔽层保护下的场致发射体能够维持结构平衡。在另一个实施例中，场发射器能够维持结构弹性。在另一实施例中，屏蔽层可以由四硼化钡组成; 该化合物在对场致发射器件施加预定的力的同时，抑制放射源降解场致发射器件，以便限制器件的结构损坏或影响器件的电子或电气性能; 在另一个实施方案中，在四硼化硼层保护下的场致发射体能够维持结构平衡; 在另一个实施例中，场发射体能够在四硼化硼层的保护下维持结构弹性。

42. 发明授权

US06352647B1 Mask, and method and apparatus for making it 失效
标题翻译：面具及其制作方法和装置
公开(公告)号：US06352647B1
公开(公告)日：2002-03-05
申请号：US09304965
申请日：1999-05-05
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： B44C122
CPC分类号： C23F1/02 , Y10T428/12715 , Y10T428/31504 , Y10T428/31678
摘要： Methods of making hardmask assemblies or other layered structures, and other masks, include providing an annular seal member between a first surface of layered structure, preferably a hardmask assembly, and a first clamp element, the hardmask assembly comprising at least a hardmask layer; and applying a force between the first clamp element and a second clamp element to hold the hardmask assembly between the annular seal member and the second clamp element. In addition, there are provided methods further comprising etching the first surface of the hardmask assembly within the bounds of an interior space defined by the annular seal member. Methods further comprise etching the substrate layer through the hardmask layer and/or removing the hardmask layer after etching the substrate layer.
摘要翻译：制造硬掩模组件或其它分层结构和其它掩模的方法包括在层状结构的第一表面，优选硬掩模组件和第一夹紧元件之间提供环形密封构件，硬掩模组件至少包括硬掩模层; 以及在所述第一夹紧元件和第二夹紧元件之间施加力以将所述硬掩模组件保持在所述环形密封元件和所述第二夹紧元件之间。此外，提供了进一步包括在由环形密封构件限定的内部空间的界限内蚀刻硬掩模组件的第一表面的方法。方法还包括在蚀刻基底层之后通过硬掩模层蚀刻衬底层和/或去除硬掩模层。

43. 发明授权

US06328803B2 Method and apparatus for controlling rate of pressure change in a vacuum process chamber 失效
标题翻译：用于控制真空处理室中的压力变化率的方法和装置
公开(公告)号：US06328803B2
公开(公告)日：2001-12-11
申请号：US08805018
申请日：1997-02-21
申请人： J. Brett Rolfson , Elton Hochhalter
发明人： J. Brett Rolfson , Elton Hochhalter
IPC分类号： C23C1600
CPC分类号： H01J37/32431 , C23C16/4412 , C23C16/52
摘要： A method, apparatus and system for controlling a rate of pressure change in a vacuum process chamber during pump down and vent up cycles of a vacuum process are provided. The method includes sensing the pressure in the process chamber, and then controlling the rate of pressure change to achieve a desired rate for a particular vacuum process. For a pump down cycle, the apparatus can include a control valve in flow communication with the process chamber and with an evacuation pump. For a vent up cycle, the apparatus can include a control valve in flow communication with the process chamber and with an inert gas supply. With either embodiment controllers can be programmed to adjust positions of the control valves based upon feedback from pressure sensors. The system can include multiple chambers each having an associated pump down and vent up control apparatus configured to match the rates of pressure change between chambers.
摘要翻译：提供了一种用于在抽真空过程的抽空和排气循环期间控制真空处理室中的压力变化率的方法，装置和系统。该方法包括感测处理室中的压力，然后控制压力变化率以达到特定真空过程的期望速率。对于抽气循环，设备可以包括与处理室和抽气泵流动连通的控制阀。对于排气循环，该装置可以包括与处理室流动连通并具有惰性气体供应的控制阀。通过任一实施例，控制器可以被编程以基于来自压力传感器的反馈来调节控制阀的位置。该系统可以包括多个腔室，每个腔室具有相关联的泵送和排气控制装置，其配置成匹配腔室之间的压力变化率。

44. 发明授权

US06255228B1 Method for removing contaminants from a semiconductor wafer 有权
公开(公告)号：US06255228B1
公开(公告)日：2001-07-03
申请号：US09584240
申请日：2000-05-30
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： H01L2102
CPC分类号： H01L21/67051 , Y10S438/906
摘要： A method for removing contaminants from a semiconductor wafer having a spin on coating of material. Contaminants are removed by applying a cleaning solution to the periphery, and preferably, the exposed backside of the wafer after the edge bead has been dissolved and removed. The cleaning solution is formulated to react chemically with unwanted coating material residue to form a compound that may be ejected from the periphery of the spinning wafer. Any residual solution or precipitate that is not ejected from the wafer may be rinsed away with water, preferably deoinized water. One exemplary use of this method is the removal of metallic contaminants that may be left on the periphery and backside of a wafer after the formation of ferroelectric film coatings. A cleaning solution comprising a mixture of hydrochloric acid HCl and water H2O or ammonium hydroxide NH4OH and water H2O is applied to the periphery of the spinning wafer. The cleaning solution will react with any residual metal ions to form a metal chloride or metal hydroxide that is ejected from the wafer along with the cleaning solution.

45. 发明授权

US06187690B1 Methods of manufacturing semiconductive wafers and semiconductive material stencil masks 失效
标题翻译：制造半导体晶片和半导体材料丝网掩模的方法
公开(公告)号：US06187690B1
公开(公告)日：2001-02-13
申请号：US09483719
申请日：2000-01-13
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： H01L21302
CPC分类号： H01L21/67075 , H01L21/30604
摘要： In one aspect, the invention includes a method for manufacturing a semiconductive wafer comprising: a) providing a semiconductive material wafer having a front surface and a back surface; b) contacting the front surface with a first fluid; c) contacting the back surface with a second fluid different than the first fluid, at least one of the first and second fluids being configured to etch the semiconductive material of the wafer; at least one of the first and second fluids having a measurable component at a first concentration which is different than any concentration of said measurable component in the other of the first and second fluids; d) etching the semiconductive wafer with the at least one of the first and second fluids configured to etch the semiconductive material; and e) monitoring the measurable component concentration in at least one of the first fluid or the second fluid to ascertain if the etching has formed an opening extending completely through the substrate. In another aspect, the invention includes a method for manufacturing a semiconductive material stencil mask comprising: a) providing a semiconductive material stencil mask substrate having a front surface and a back surface; b) contacting the front surface with an inert solution having a first pH; c) contacting the back surface with an etchant having a second pH, the second pH being different than the first pH; and d) monitoring the pH of at least one of the inert solution or the etchant to ascertain if the etchant has formed an opening extending completely through the substrate.
摘要翻译：一方面，本发明包括一种用于制造半导体晶片的方法，包括：a）提供具有前表面和后表面的半导体材料晶片; b）使前表面与第一流体接触; c）使所述后表面与不同于所述第一流体的第二流体接触，所述第一和第二流体中的至少一个被配置为蚀刻所述晶片的半导体材料; 第一和第二流体中的至少一个具有第一浓度的可测量组分，其不同于第一和第二流体中另一个中的所述可测量组分的任何浓度; d）蚀刻所述半导体晶片，所述第一和第二流体中的至少一个配置成蚀刻所述半导体材料; 以及e）监测所述第一流体或第二流体中的至少一个中的可测量的组分浓度，以确定蚀刻是否已经形成完全延伸穿过基底的开口。另一方面，本发明包括一种用于制造半导体材料丝网掩模的方法，包括：a）提供具有前表面和后表面的半导体材料模板掩模基板; b）使前表面与具有第一pH的惰性溶液接触; c）使所述背表面与具有第二pH的蚀刻剂接触，所述第二pH不同于所述第一pH; 和d）监测惰性溶液或蚀刻剂中的至少一种的pH值，以确定蚀刻剂是否形成了完全延伸穿过基底的开口。

46. 发明授权

US06187481B1 Semiconductive material stencil mask and methods of manufacturing stencil masks from semiconductive material, utilizing different dopants 失效
标题翻译：半导体材料模板掩模和半导体材料制造模板掩模的方法，利用不同的掺杂剂
公开(公告)号：US06187481B1
公开(公告)日：2001-02-13
申请号：US09137662
申请日：1998-08-20
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F900
CPC分类号： H01L21/3065
摘要： In one aspect, the invention includes a method of maintaining dimensions of an opening in a semiconductive material stencil mask comprising providing two different dopants within a periphery of the opening, the dopants each being provided to a concentration of at least about 1017 atoms/cm3. In another aspect, the invention includes a method of manufacturing a stencil mask from a semiconductive material comprising: a) providing a semiconductive material wafer, the wafer comprising an upper portion and a lower portion beneath the upper portion; b) forming openings extending through the upper portion of the wafer and to the lower portion of the wafer; c) forming a first dopant concentration within the wafer, the first dopant concentration being greater within the upper portion of the wafer than within at least a part of the lower portion of the wafer; d) providing a second dopant concentration within the upper portion of the wafer; and e) removing the lower portion of the wafer to leave a stencil mask substrate having openings formed therethrough. In yet another aspect, the invention comprises a semiconductive material stencil mask comprising: a) a semiconductive material substrate having an opening therethrough, the opening being defined by a periphery comprising the semiconductive material; and b) two different dopants within the semiconductive material at the periphery, the two different dopants being of a same conductivity type.
摘要翻译：一方面，本发明包括一种在半导体材料模板掩模中保持开口的尺寸的方法，包括在开口的周边内提供两种不同的掺杂剂，所述掺杂剂各自提供至少约1017原子/ cm3的浓度。另一方面，本发明包括从半导体材料制造模版掩模的方法，包括：a）提供半导体材料晶片，所述晶片包括在上部下方的上部和下部; b）形成延伸穿过晶片的上部和晶片下部的开口; c）在所述晶片内形成第一掺杂剂浓度，所述第一掺杂剂浓度在所述晶片的上部内比在所述晶片的下部的至少一部分内更大; d）在晶片的上部提供第二掺杂剂浓度; 以及e）去除晶片的下部以留下具有通过其形成的开口的模板掩模基板。在另一方面，本发明包括半导体材料模板掩模，其包括：a）具有穿过其中的开口的半导体材料基板，所述开口由包括半导体材料的外围限定; 和b）外围半导体材料中的两种不同的掺杂剂，两种不同的掺杂剂具有相同的导电类型。

47. 发明授权

US6110331A Apparatus and system for fabricating lithographic stencil masks 有权
标题翻译：用于制造光刻模板掩模的装置和系统
公开(公告)号：US6110331A
公开(公告)日：2000-08-29
申请号：US255468
申请日：1999-02-22
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/20 , C25D17/00
CPC分类号： G03F1/20
摘要： A method, apparatus and system for fabricating a stencil mask for ion beam and electron beam lithography are provided. The stencil mask includes a silicon substrate, a membrane formed from the substrate, and a mask pattern formed by through openings in the membrane. The method includes defining the mask pattern and membrane area using semiconductor fabrication processes, and then forming the membrane by back side etching the substrate. The apparatus is configured to electrochemically wet etch the substrate, and to equalize pressure on either side of the substrate during the etch process. The system includes an ion implanter for defining a membrane area on the substrate, optical or e-beam pattern generators for patterning various masks on the substrate, a reactive ion etcher for etching the mask pattern in the substrate, and the apparatus for etching the back side of the substrate.
摘要翻译：提供了用于制造用于离子束和电子束光刻的模板掩模的方法，装置和系统。模板掩模包括硅衬底，由衬底形成的膜，以及由膜中的通孔开口形成的掩模图案。该方法包括使用半导体制造工艺限定掩模图案和膜面积，然后通过背面蚀刻基板形成膜。该设备被配置为电化学湿法蚀刻衬底，并且在蚀刻工艺期间平衡衬底的任一侧上的压力。该系统包括用于限定衬底上的膜区域的离子注入机，用于在衬底上构图各种掩模的光束或电子束图案发生器，用于蚀刻衬底中的掩模图案的反应离子蚀刻器和用于蚀刻背面的设备侧面。

48. 发明授权

US6025278A Methods for manufacturing semiconductive wafers and semiconductive material stencil masks 失效
标题翻译：制造半导体晶片和半导体材料丝网掩模的方法
公开(公告)号：US6025278A
公开(公告)日：2000-02-15
申请号：US916818
申请日：1997-08-22
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： H01L21/00 , H01L21/306
CPC分类号： H01L21/67075 , H01L21/30604
摘要： In one aspect, the invention includes a method for manufacturing a semiconductive wafer comprising: a) providing a semiconductive material wafer having a front surface and a back surface; b) contacting the front surface with a first fluid; c) contacting the back surface with a second fluid different than the first fluid, at least one of the first and second fluids being configured to etch the semiconductive material of the wafer; at least one of the first and second fluids having a measurable component at a first concentration which is different than any concentration of said measurable component in the other of the first and second fluids; d) etching the semiconductive wafer with the at least one of the first and second fluids configured to etch the semiconductive material; and e) monitoring the measurable component concentration in at least one of the first fluid or the second fluid to ascertain if the etching has formed an opening extending completely through the substrate. In another aspect, the invention includes a method for manufacturing a semiconductive material stencil mask comprising: a) providing a semiconductive material stencil mask substrate having a front surface and a back surface; b) contacting the front surface with an inert solution having a first pH; c) contacting the back surface with an etchant having a second pH, the second pH being different than the first pH; and d) monitoring the pH of at least one of the inert solution or the etchant to ascertain if the etchant has formed an opening extending completely through the substrate.
摘要翻译：一方面，本发明包括一种用于制造半导体晶片的方法，包括：a）提供具有前表面和后表面的半导体材料晶片; b）使前表面与第一流体接触; c）使所述后表面与不同于所述第一流体的第二流体接触，所述第一和第二流体中的至少一个被配置为蚀刻所述晶片的半导体材料; 第一和第二流体中的至少一个具有第一浓度的可测量组分，其不同于第一和第二流体中另一个中的所述可测量组分的任何浓度; d）蚀刻所述半导体晶片，所述第一和第二流体中的至少一个配置成蚀刻所述半导体材料; 以及e）监测所述第一流体或第二流体中的至少一个中的可测量的组分浓度，以确定蚀刻是否已经形成完全延伸穿过基底的开口。另一方面，本发明包括一种用于制造半导体材料丝网掩模的方法，包括：a）提供具有前表面和后表面的半导体材料模板掩模基板; b）使前表面与具有第一pH的惰性溶液接触; c）使所述背表面与具有第二pH的蚀刻剂接触，所述第二pH不同于所述第一pH; 和d）监测惰性溶液或蚀刻剂中的至少一种的pH值，以确定蚀刻剂是否形成了完全延伸穿过基底的开口。

49. 发明授权

US6013943A Etch stop for use in etching of silicon oxide 失效
标题翻译：蚀刻停止用于蚀刻氧化硅
公开(公告)号：US6013943A
公开(公告)日：2000-01-11
申请号：US850461
申请日：1997-05-05
申请人： David A. Cathey , J. Brett Rolfson , Valerie A. Ward , Karen M. Winchester
发明人： David A. Cathey , J. Brett Rolfson , Valerie A. Ward , Karen M. Winchester
IPC分类号： H01L21/311 , H01L21/318 , H01L23/58
CPC分类号： H01L21/31116 , H01L21/3185 , Y10S438/97
摘要： A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N--H bonds, O--H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH.sub.3 flow, decreasing the SiH.sub.4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
摘要翻译：用于氧化硅干氟蚀刻工艺中的蚀刻停止层由氮化物制成，其中以氢键连接在其中，其形式为N-H键，O-H键或截留的游离氢。蚀刻停止层是通过在标准PECVD氮化硅制造工艺中增加NH 3流，降低SiH4流量，降低氮气流量或全部三种来制备的。替代地，蚀刻停止可以通过在PECVD工艺或LPCVD工艺中脉冲RF场来制造。

50. 发明授权

US6001189A Method for reducing gaseous species of contamination in wet processes 失效
公开(公告)号：US6001189A
公开(公告)日：1999-12-14
申请号：US724578
申请日：1996-09-30
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： B08B3/04 , B08B3/14 , H01L21/00 , H01L21/306 , C02F1/20
CPC分类号： H01L21/02052 , B01D19/0036 , B01D19/0068 , B08B3/04 , B08B3/14 , H01L21/67057 , H01L21/67086 , Y10S134/902 , Y10S438/906
摘要： A method for wet processing of a semiconductor-containing substrate that reduces contamination in the wet process by removing undesired sources of gas contamination, the method comprising: pumping a processing liquid through a degasifier, exposing the semiconductor wafer, in a vessel, to the degasified processing liquid; and optionally recirculating the processing liquid through the degasifier and back into the vessel.

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