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41. 发明授权

US07704771B2 Light emitting device, method of manufacturing the same and monolithic light emitting diode array 有权
标题翻译：发光器件及其制造方法和单片发光二极管阵列
公开(公告)号：US07704771B2
公开(公告)日：2010-04-27
申请号：US12071544
申请日：2008-02-22
申请人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L21/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.
摘要翻译：一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

42. 发明申请

US20080191215A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20080191215A1
公开(公告)日：2008-08-14
申请号：US12003886
申请日：2008-01-03
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

43. 发明申请

US20080044937A1 Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode 有权
标题翻译：形成表面凹凸的方法和制造氮化镓基发光二极管的方法
公开(公告)号：US20080044937A1
公开(公告)日：2008-02-21
申请号：US11798083
申请日：2007-05-10
申请人： Pun Jae Choi , Masayoshi Koike , Lee Jong Ho
发明人： Pun Jae Choi , Masayoshi Koike , Lee Jong Ho
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/32
摘要： A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etching of the GaN substrate is performed until the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface.
摘要翻译：形成表面凹凸的方法包括制备GaN衬底; 在所述GaN衬底的表面上形成掩模，所述掩模限定表面不规则形成区域; 以及通过使用掩模作为蚀刻掩模将GaN衬底的表面的湿蚀刻部分。执行GaN衬底的湿蚀刻，直到通过使用掩模的湿蚀刻形成的GaN衬底的一个表面的端部与通过湿蚀刻形成的GaN衬底的另一表面的端部相接合，使用该掩模，另一个表面与该表面相邻。

44. 发明申请

US20070159064A1 White light emitting device 审中-公开
标题翻译：白色发光装置
公开(公告)号：US20070159064A1
公开(公告)日：2007-07-12
申请号：US11600107
申请日：2006-11-16
申请人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
发明人： Pun Jae Choi , Masayoshi Koike , Sang Yeob Song
IPC分类号： H01J1/62
CPC分类号： H01L33/50 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.
摘要翻译：白色发光器件包括通过使用两个或更少的LED发射具有至少四个波长的白光的结构，其中LED包括发射蓝色和绿色波长的光的蓝/绿LED。该装置还包括用于发射红色波长的光的装置。

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