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41. 发明授权

US08420428B2 Method for forming buried cavities within a semiconductor body, and semiconductor body thus made 有权
标题翻译：在半导体本体内形成掩埋空穴的方法以及由此制成的半导体本体
公开(公告)号：US08420428B2
公开(公告)日：2013-04-16
申请号：US12873685
申请日：2010-09-01
申请人： Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Francesco Villa
发明人： Gabriele Barlocchi , Pietro Corona , Dino Faralli , Flavio Francesco Villa
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： B81C1/00047 , B01L3/502707 , B01L7/52 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0816 , B01L2300/1827 , B81B2201/0264 , B81B2203/0315
摘要： A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.
摘要翻译：一种用于在半导体主体内形成掩埋空腔的方法，设想了以下步骤：提供具有由半导体材料制成的体区的晶片; 在本体区域中挖掘在它们的半导体材料壁之间划定的沟槽; 形成用于在脱氧气氛存在下关闭所述沟槽的闭合层，以便使所述沟槽内的脱氧气氛充满; 进行热处理，使壁的半导体材料迁移并形成掩埋腔。此外，在进行热处理之前，在沟槽顶部的闭合层上形成基本上不透氢的阻挡层。

42. 发明授权

US08173513B2 Method for manufacturing a semiconductor pressure sensor 有权
标题翻译：半导体压力传感器的制造方法
公开(公告)号：US08173513B2
公开(公告)日：2012-05-08
申请号：US12163110
申请日：2008-06-27
申请人： Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
发明人： Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
IPC分类号： H01L21/76
CPC分类号： G01L9/0073 , G01L9/0045
摘要： Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
摘要翻译：制造半导体压力传感器的方法，其中在硅衬底中，挖沟和界定壁; 闭合层外延生长，封闭顶部的沟槽并形成悬浮膜; 进行热处理以使壁的硅迁移并在悬浮膜下方形成封闭空腔; 并且形成用于将悬浮膜的偏转转换成电信号的结构。

43. 发明授权

US08008738B2 Integrated differential pressure sensor 有权
标题翻译：集成差压传感器
公开(公告)号：US08008738B2
公开(公告)日：2011-08-30
申请号：US12826388
申请日：2010-06-29
申请人： Flavio Francesco Villa , Pietro Corona , Gabriele Barlocchi , Lorenzo Baldo
发明人： Flavio Francesco Villa , Pietro Corona , Gabriele Barlocchi , Lorenzo Baldo
IPC分类号： H01L29/84 , G01L9/00
CPC分类号： G01L9/0045 , G01L13/025
摘要： An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.
摘要翻译：集成的差压传感器包括在半导体材料的整体主体中的第一面和第二面，空腔与第一面延伸一定距离，并由其中由通过外延材料部分由整体式形成的柔性膜界定并且部分地通过来自整体式的退火的外延材料，与空腔流体连通的进入通道，以及柔性膜中的至少一个换能元件，其构造成将柔性膜的变形转换为电信号。空腔形成在距离第二面一定距离处的位置，并且在第二面处与整体式主体的一部分界定。

44. 发明申请

US20100269595A1 INTEGRATED DIFFERENTIAL PRESSURE SENSOR 有权
标题翻译：集成式差压传感器
公开(公告)号：US20100269595A1
公开(公告)日：2010-10-28
申请号：US12826388
申请日：2010-06-29
申请人： Flavio Francesco Villa , Pietro Corona , Gabriele Barlocchi , Lorenzo Baldo
发明人： Flavio Francesco Villa , Pietro Corona , Gabriele Barlocchi , Lorenzo Baldo
IPC分类号： G01L9/12 , G01L9/06
CPC分类号： G01L9/0045 , G01L13/025
摘要： An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.
摘要翻译：集成的差压传感器包括在半导体材料的整体主体中的第一面和第二面，空腔与第一面延伸一定距离，并由其中由通过外延材料部分由整体式形成的柔性膜界定并且部分地通过来自整体式的退火的外延材料，与空腔流体连通的进入通道，以及柔性膜中的至少一个换能元件，其构造成将柔性膜的变形转换为电信号。空腔形成在距离第二面一定距离处的位置，并且在第二面处与整体式主体的一部分界定。

45. 发明申请

US20050181392A1 Integrated chemical microreactor with large area channels and manufacturing process thereof 有权
标题翻译：具有大面积通道的集成化学微反应器及其制造工艺
公开(公告)号：US20050181392A1
公开(公告)日：2005-08-18
申请号：US10996593
申请日：2004-11-24
申请人： Gabriele Barlocchi , Ubaldo Mastromatteo , Flavio Villa
发明人： Gabriele Barlocchi , Ubaldo Mastromatteo , Flavio Villa
IPC分类号： B81B1/00 , B81C1/00 , C12Q1/68 , C12M1/34
CPC分类号： B81C1/00539 , B81B1/002 , B81B2201/0214 , B81B2201/051 , B81C1/00404
摘要： The microreactor has a body of semiconductor material; a large area buried channel extending in the body and having walls; a coating layer of insulating material coating the walls of the channel; a diaphragm extending on top of the body and upwardly closing the channel. The diaphragm is formed by a semiconductor layer completely encircling mask portions of insulating material.
摘要翻译：微反应器具有半导体材料体; 一个大面积的埋藏通道延伸到身体并具有墙壁; 覆盖通道壁的绝缘材料的涂层; 一个在主体顶部延伸并向上关闭通道的隔膜。隔膜由完全环绕绝缘材料的掩模部分的半导体层形成。

46. 发明授权

US06909073B2 Integrated device based upon semiconductor technology, in particular chemical microreactor 有权
标题翻译：基于半导体技术的集成器件，特别是化学微反应器
公开(公告)号：US06909073B2
公开(公告)日：2005-06-21
申请号：US10795589
申请日：2004-03-08
申请人： Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
发明人： Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
IPC分类号： B01J19/00 , B01L3/00 , B01L7/00 , C12M1/34 , C12M1/36 , G01N33/487 , H05B3/02
CPC分类号： B01L7/525 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00828 , B01J2219/0086 , B01J2219/00873 , B01J2219/00961 , B01J2219/00986 , B01L3/5027 , B01L3/502707 , B01L2300/1827 , B01L2300/185 , B01L2300/1883 , B01L2300/1894
摘要： An integrated device based upon semiconductor technology, in particular a chemical microreactor, including a semiconductor body having a high-temperature operating portion and a low temperature operating portion. The semiconductor body is provided with a thermal-insulation device including a dissipator element arranged between the high-temperature operating portion and the low-temperature operating portion. The dissipator includes a membrane connecting the high-temperature operating portion and the low-temperature operating portion, and a plurality of diaphragms that extend substantially orthogonal to the membrane and are parallel to one another.
摘要翻译：基于半导体技术的集成器件，特别是化学微反应器，包括具有高温操作部分和低温操作部分的半导体本体。半导体本体设置有绝热装置，其包括设置在高温操作部和低温操作部之间的耗散元件。散热器包括连接高温操作部分和低温操作部分的膜，以及基本上垂直于膜并且彼此平行延伸的多个膜片。

47. 发明授权

US06770471B2 Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing and operating methods therefor 有权
公开(公告)号：US06770471B2
公开(公告)日：2004-08-03
申请号：US09965128
申请日：2001-09-26
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： C12M134
CPC分类号： B01L7/52 , B01L3/502707 , B01L2200/12 , B01L2300/0645 , B01L2300/0825 , B01L2300/1827 , B01L2300/1883
摘要： Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.

48. 发明授权

US06727479B2 Integrated device based upon semiconductor technology, in particular chemical microreactor 有权
标题翻译：基于半导体技术的集成器件，特别是化学微反应器
公开(公告)号：US06727479B2
公开(公告)日：2004-04-27
申请号：US10128989
申请日：2002-04-22
申请人： Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
发明人： Flavio Villa , Gabriele Barlocchi , Manlio Gennaro Torchia , Ubaldo Mastromatteo
IPC分类号： H05B302
CPC分类号： B01L7/525 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00828 , B01J2219/0086 , B01J2219/00873 , B01J2219/00961 , B01J2219/00986 , B01L3/5027 , B01L3/502707 , B01L2300/1827 , B01L2300/185 , B01L2300/1883 , B01L2300/1894
摘要： An integrated device based upon semiconductor technology, in particular a chemical microreactor, including a semiconductor body having a high-temperature operating portion and a low-temperature operating portion. The semiconductor body is provided with a thermal-insulation device including a dissipator element arranged between the high-temperature operating portion and the low-temperature operating portion. The dissipator includes a membrane connecting the high-temperature operating portion and the low-temperature operating portion, and a plurality of diaphragms that extend substantially orthogonal to the membrane and are parallel to one another.
摘要翻译：基于半导体技术的集成器件，特别是化学微反应器，包括具有高温操作部分和低温操作部分的半导体本体。半导体本体设置有绝热装置，其包括设置在高温操作部和低温操作部之间的耗散元件。散热器包括连接高温操作部分和低温操作部分的膜，以及基本上垂直于膜并且彼此平行延伸的多个膜片。

49. 发明授权

US06673593B2 Integrated device for microfluid thermoregulation, and manufacturing process thereof 有权
标题翻译：用于微流体温度调节的集成装置及其制造方法
公开(公告)号：US06673593B2
公开(公告)日：2004-01-06
申请号：US09779980
申请日：2001-02-08
申请人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
发明人： Ubaldo Mastromatteo , Flavio Villa , Gabriele Barlocchi
IPC分类号： C12M100
CPC分类号： B65D73/00 , A01G9/026 , B01J19/0093 , B01J2219/00873 , B01J2219/00961 , B01L3/5025 , B01L3/502707 , B01L3/502715 , B01L7/52 , B01L2200/12 , B01L2200/147 , B01L2300/0816 , B01L2300/1827 , B26D1/245 , B29C53/04 , B29C61/02 , B29L2009/00 , B32B3/28 , B32B7/02 , B32B37/144 , B32B38/1866 , B32B2307/736 , B44C3/04 , B44C3/044 , B44C3/087 , B44C5/005 , B44C5/06 , B44F1/14 , F28F2260/02 , Y10T156/1041 , Y10T156/1051 , Y10T156/1052 , Y10T428/2443
摘要： The integrated device for microfluid thermoregulation comprises a semiconductor material body having a surface; a plurality of buried channels extending in the semiconductor material body at a distance from the surface of the semiconductor material body; inlet and outlet ports extending from the surface of the semiconductor material body as far as the ends of the buried channels and being in fluid connection with the buried channels; and heating elements on the semiconductor material body. Temperature sensors are arranged between the heating elements above the surface of the semiconductor material body.
摘要翻译：用于微流体温度调节的集成装置包括具有表面的半导体材料体; 多个掩埋沟道，其在半导体材料体的与半导体材料体的表面相距一定距离处延伸; 入口和出口从半导体材料体的表面延伸到埋入通道的端部并与埋入通道流体连接; 以及半导体材料体上的加热元件。温度传感器布置在半导体材料体表面之上的加热元件之间。

50. 发明授权

US06506663B1 Method for producing an SOI wafer 有权
标题翻译： SOI晶圆的制造方法
公开(公告)号：US06506663B1
公开(公告)日：2003-01-14
申请号：US09457623
申请日：1999-12-08
申请人： Gabriele Barlocchi , Flavio Villa
发明人： Gabriele Barlocchi , Flavio Villa
IPC分类号： H01L2176
CPC分类号： H01L21/76262
摘要： A method for providing an SOI wafer that includes, on a wafer of monocrystalline semiconductor material, forming a hard mask of an oxidation-resistant material, defining first protective regions covering first portions of the wafer; excavating the second portions of the wafer, forming initial trenches extending between the first portions of the wafer; thermally oxidating the wafer, forming a sacrificial oxide layer extending at the lateral and base walls of the initial trenches, below the first protective regions; and wet etching the wafer, to completely remove the sacrificial oxide layer. Thereby, intermediate trenches are formed, the lateral walls of which are recessed with respect to the first protective regions. Subsequently, a second oxide layer is formed inside the intermediate trenches; a second silicon nitride layer is deposited; final trenches are produced; a buried oxide region is formed, and finally an epitaxial layer is grown.
摘要翻译：一种用于提供SOI晶片的方法，所述SOI晶片包括在单晶半导体材料的晶片上，形成覆盖所述晶片的第一部分的第一保护区域的抗氧化材料的硬掩模; 挖掘晶片的第二部分，形成在晶片的第一部分之间延伸的初始沟槽; 热氧化所述晶片，在所述第一保护区下方形成在所述初始沟槽的侧壁和底壁处延伸的牺牲氧化物层; 并湿式蚀刻晶片，以完全去除牺牲氧化物层。由此，形成中间沟槽，其侧壁相对于第一保护区域凹陷。随后，在中间沟槽内部形成第二氧化物层; 沉积第二氮化硅层; 制作最后的壕沟; 形成掩埋氧化物区域，最后生长外延层。

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