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41. 发明授权

US07402846B2 Electrostatic discharge (ESD) protection structure and a circuit using the same 有权
标题翻译：静电放电（ESD）保护结构和使用其的电路
公开(公告)号：US07402846B2
公开(公告)日：2008-07-22
申请号：US11254387
申请日：2005-10-20
申请人： Stefan Schwantes , Michael Graf , Volker Dudek , Gayle W. Miller, Jr. , Irwin Rathbun , Peter Grombach , Manfred Klaussner
发明人： Stefan Schwantes , Michael Graf , Volker Dudek , Gayle W. Miller, Jr. , Irwin Rathbun , Peter Grombach , Manfred Klaussner
IPC分类号： H01L27/10 , H01L29/739 , H01L29/73 , H01L29/74 , H01L23/62 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/0266 , H01L29/0696 , H01L29/1087 , H01L29/7835
摘要： An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one body contact row is located on the active device in a manner to reduce the amount of voltage required for triggering the ESD protection structure.
摘要翻译：公开了一种静电放电（ESD）保护结构。 ESD保护结构包括有源器件。有源器件包括多个漏极。每个排水沟具有接触排和至少一个身体接触排。所述至少一个体接触排以减少触发ESD保护结构所需的电压量的方式位于有源器件上。

42. 发明授权

US07348256B2 Methods of forming reduced electric field DMOS using self-aligned trench isolation 有权
标题翻译：使用自对准沟槽隔离形成还原电场DMOS的方法
公开(公告)号：US07348256B2
公开(公告)日：2008-03-25
申请号：US11188921
申请日：2005-07-25
申请人： Gayle W. Miller, Jr. , Volker Dudek , Michael Graf
发明人： Gayle W. Miller, Jr. , Volker Dudek , Michael Graf
IPC分类号： H01L21/76
CPC分类号： H01L29/7824 , H01L21/823481 , H01L29/0653 , H01L29/0847 , H01L29/086 , H01L29/42368 , H01L29/66659 , H01L29/66689 , H01L29/7835
摘要： A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first polysilicon layer over the gate oxide; and forming a first silicon dioxide layer over the first polysilicon layer. A first silicon nitride layer is then formed over the first silicon dioxide layer followed by a second silicon dioxide layer. Shallow trenches are etched through all preceding dielectric layers and into the SOI substrate. The etched trenches are filled with another dielectric layer (e.g., silicon dioxide) and planarized. Each of the preceding dielectric layers are removed, leaving an uppermost sidewall area of the dielectric layer exposed for contact with a later-applied polysilicon gate area. Formation of the sidewall area assures a full-field oxide thickness thereby producing a device with a reduced-electric field and a reduced capacitance between gate and drift regions.
摘要翻译：一种制造电子装置的方法和所得到的电子装置。该方法包括在绝缘体上硅衬底的最上侧形成栅极氧化物; 在所述栅极氧化物上形成第一多晶硅层; 以及在所述第一多晶硅层上形成第一二氧化硅层。然后在第一二氧化硅层上形成第一氮化硅层，接着形成第二二氧化硅层。通过所有以前的介电层蚀刻浅沟槽并进入SOI衬底。蚀刻的沟槽用另一介质层（例如二氧化硅）填充并平坦化。去除每个前述电介质层，留下电介质层的最上面的侧壁区域暴露以与稍后施加的多晶硅栅极区域接触。侧壁区域的形成确保全场氧化物厚度，从而产生具有减小的电场和栅极和漂移区域之间的减小的电容的器件。

43. 发明申请

US20070207589A1 REGISTRATION MARK WITHIN AN OVERLAP OF DOPANT REGIONS 审中-公开
标题翻译：注册区域内的注册标志
公开(公告)号：US20070207589A1
公开(公告)日：2007-09-06
申请号：US11744992
申请日：2007-05-07
申请人： Franz Dietz , Volker Dudek , Michael Graf , Stefan Schwantes , Gayle Miller
发明人： Franz Dietz , Volker Dudek , Michael Graf , Stefan Schwantes , Gayle Miller
IPC分类号： H01L21/76
CPC分类号： G03F7/70425 , G03F7/70633 , G03F9/7076
摘要： A first mark, in a double-well integrated circuit technology, is formed by a first etching of a first mask layer on top of an ONO stack. After a first well is doped, a second etching occurs at the first etching sites in the uppermost layer of oxide of the ONO stack forming a first alignment artifact. A second mask layer is applied after removing the first mask layer. A second well doping occurs at second mask layer etching sites to maintain clearance between the two wells within active areas and provide an overlap of the two wells in a frame area. At the first alignment artifact in the overlap of the two wells, further etchings remove remaining layers of the ONO stack and remove silicon from the upper most layer of the semiconductor forming a second registration mark, which may be covered by a protective layer.
摘要翻译：在双井集成电路技术中的第一标记是通过在ONO堆叠的顶部上的第一掩模层的第一蚀刻形成的。在第一阱被掺杂之后，在ONO堆叠的最上层的氧化物的第一蚀刻位置处发生第二蚀刻，形成第一对准伪影。在去除第一掩模层之后施加第二掩模层。第二阱掺杂发生在第二掩模层蚀刻位置处，以保持有效区域内的两个阱之间的间隙，并且在框架区域中提供两个阱的重叠。在两个阱的重叠处的第一对准伪影处，进一步蚀刻去除ONO堆叠的剩余层，并从半导体层的最上层去除硅，形成可被保护层覆盖的第二对准标记。

44. 发明申请

US20060281291A1 Method for manufacturing a metal-semiconductor contact in semiconductor components 失效
标题翻译：半导体元件中的金属 - 半导体接触的制造方法
公开(公告)号：US20060281291A1
公开(公告)日：2006-12-14
申请号：US11447094
申请日：2006-06-06
申请人： Franz Dietz , Volker Dudek , Tobias Florian , Michael Graf
发明人： Franz Dietz , Volker Dudek , Tobias Florian , Michael Graf
IPC分类号： H01L21/8238 , H01L21/44
CPC分类号： H01L21/28537 , H01L21/76802 , H01L21/76816 , H01L21/76829 , H01L27/095 , H01L29/66143 , H01L31/108 , H01L31/18
摘要： A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art methods. In the disclosed method, the actual metal-semiconductor or Schottky contact is produced only after the application of a protective layer system, as a result of which it is possible to use any metals, particularly platinum, without the risk of contamination.
摘要翻译：公开了一种半导体元件中的金属 - 半导体接触的制造方法。在现有技术方法中金属沉积过程中存在较高的污染风险。在所公开的方法中，仅在施加保护层系统之后才产生实际的金属 - 半导体或肖特基接触，其结果是可以使用任何金属，特别是铂，而不会有污染的风险。

45. 发明授权

US07009256B2 Semiconductor over-voltage protection structure for integrated circuit and for diode 有权
标题翻译：用于集成电路和二极管的半导体过电压保护结构
公开(公告)号：US07009256B2
公开(公告)日：2006-03-07
申请号：US10945719
申请日：2004-09-20
申请人： Franz Dietz , Michael Graf
发明人： Franz Dietz , Michael Graf
IPC分类号： H01L23/62
CPC分类号： H01L27/0259 , H01L27/1203
摘要： A monolithically integratable semiconductor structure serves for over-voltage protection in an integrated circuit or as a normal diode. The structure includes an insulating layer between a substrate and a semiconductor layer of first conductivity type, and several layers formed in the semiconductor layer. First and second layers of second conductivity type are spaced apart from one another. A third layer of first conductivity type contacts the second layer. A fourth layer of first conductivity type directly contacts and surrounds the second and third layers. A fifth layer of first conductivity type and higher dopant concentration than the semiconductor layer is disposed under the first layer. The first layer surrounds the second, third and fourth layers essentially in a ring-shape. A first electrode contacts the first layer. A second electrode contacts the second and third layers.
摘要翻译：单片可积分半导体结构用于集成电路或普通二极管中的过电压保护。该结构包括在基板和第一导电类型的半导体层之间的绝缘层，以及形成在半导体层中的若干层。第一和第二第二导电类型彼此间隔开。第一导电类型的第三层接触第二层。第一导电类型的第四层直接接触并围绕第二和第三层。第一导电类型的第五层和比半导体层高的掺杂剂浓度设置在第一层之下。第一层围绕第二层，第三层和第四层，基本上呈环形。第一电极接触第一层。第二电极接触第二和第三层。

46. 发明申请

US20050095804A1 Method of fabricating semiconductor components through implantation and diffusion in a semiconductor substrate 有权
标题翻译：通过半导体衬底中的注入和扩散来制造半导体元件的方法
公开(公告)号：US20050095804A1
公开(公告)日：2005-05-05
申请号：US10946506
申请日：2004-09-20
申请人： Franz Dietz , Volker Dudek , Michael Graf
发明人： Franz Dietz , Volker Dudek , Michael Graf
IPC分类号： H01L21/225 , H01L21/265 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/8238 , H01L27/08 , H01L29/10 , H01L29/78 , H01L29/786 , H01L21/20
CPC分类号： H01L29/66659 , H01L21/2253 , H01L21/26586 , H01L21/76237 , H01L21/76283 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/7835
摘要： A semiconductor element such as a DMOS-transistor is fabricated in a semiconductor substrate. Wells of opposite conductivity are formed by implanting and then thermally diffusing respective well dopants into preferably spaced-apart areas in the substrate. At least one trench and active regions are formed in the substrate. The trench may be a shallow drift zone trench of a DMOS-transistor, and/or a deep isolation trench. The thermal diffusion of the well dopants includes at least one first diffusion step during a first high temperature drive before forming the trench, and at least one second diffusion step during a second high temperature drive after forming the trench. Dividing the thermal diffusion steps before and after the trench formation achieves an advantageous balance between reducing or avoiding lateral overlapping diffusion of neighboring wells and reducing or avoiding thermally induced defects along the trench boundaries.
摘要翻译：在半导体衬底中制造诸如DMOS晶体管的半导体元件。相反电导率的阱通过注入然后将各个掺杂剂热扩散到衬底中优选间隔开的区域中而形成。在衬底中形成至少一个沟槽和有源区。沟槽可以是DMOS晶体管的浅漂移区沟槽和/或深隔离沟槽。阱掺杂剂的热扩散包括在形成沟槽之前的第一高温驱动期间的至少一个第一扩散步骤，以及在形成沟槽之后的第二高温驱动期间的至少一个第二扩散步骤。在沟槽形成之前和之后划分热扩散步骤在减少或避免相邻阱的横向重叠扩散之间实现有利的平衡，并减少或避免沿着沟槽边界的热诱导缺陷。

47. 发明授权

US06878603B2 Process for manufacturing a DMOS transistor 有权
标题翻译：制造DMOS晶体管的工艺
公开(公告)号：US06878603B2
公开(公告)日：2005-04-12
申请号：US10167961
申请日：2002-06-11
申请人： Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
发明人： Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
IPC分类号： H01L29/786 , H01L21/265 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/78 , H01L21/20 , H01L21/331 , H01L21/425 , H01L21/76
CPC分类号： H01L29/0878 , H01L21/26586 , H01L29/0653 , H01L29/0847 , H01L29/66659 , H01L29/7835
摘要： In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.
摘要翻译：在制造DMOS晶体管的新工艺中，倾斜侧壁的掺杂可以独立于沟槽结构中底层区域的掺杂来设置。此外，可以在侧壁之间建立不同的掺杂。这通过一系列注入掺杂，蚀刻形成沟槽，在侧壁上形成散射氧化物保护层以及两级垂直和倾斜的最终注入掺杂来实现。对于DMOS晶体管，即使使用低导通电阻也能实现高的突破电压，并且特别是关于驱动器结构，减少了空间需求。

48. 发明授权

US06271742B1 Mains adapter and method for its production 失效
标题翻译：主电源适配器及其生产方法
公开(公告)号：US06271742B1
公开(公告)日：2001-08-07
申请号：US09377728
申请日：1999-08-19
申请人： Michael Graf
发明人： Michael Graf
IPC分类号： H01F2702
CPC分类号： H01F41/005 , H01F27/022 , H01F27/025 , H01F27/04
摘要： The iron core (2) and the windings (3, 4) of a transformer (1) are held together by a coil former (21) which is arranged in an injection mould in such a way that it comes into contact with said mould only with small parts at its surface, whereas the transformer (1) is a distance away from its walls. A plastic shell (22) is then moulded on to complete a small and light integral casing (7) enclosing the transformer all round and in an abutting manner. Joints between the coil former (21) and the shell (22) are essentially at the bottom of indentations which separate cooling fins (20).
摘要翻译：变压器（1）的铁芯（2）和绕组（3,4）由线圈架（21）保持在一起，线圈架（21）以与模具接触的方式配置在注塑模具中其表面具有小部件，而变压器（1）距离其墙壁一定距离。然后将塑料外壳（22）模制成完整的小而轻的整体式外壳（7），其围绕变压器全部和邻接。线圈架（21）和壳体（22）之间的接头基本上位于分开冷却翅片（20）的压痕的底部。

49. 发明授权

US6088638A Safety system for an electrical system 有权
标题翻译：电气系统安全系统
公开(公告)号：US6088638A
公开(公告)日：2000-07-11
申请号：US131315
申请日：1998-08-07
申请人： Holger Behrends , Thomas Dieckmann , Rainer Giese , Michael Graf , Ricky Hudi
发明人： Holger Behrends , Thomas Dieckmann , Rainer Giese , Michael Graf , Ricky Hudi
IPC分类号： B60T8/88 , B60T13/74 , B60T17/22 , H02J7/34 , H02J9/06 , G06F17/00
CPC分类号： H02J7/34 , B60T13/74 , B60T17/221 , B60T8/885 , H02J9/061 , B60T2270/414
摘要： The invention relates to a safety system having electrical consumers (18a, 18b) which are supplied with electrical energy in normal operation from an electrical energy source (2, 4, 6). The safety system includes an electrical energy store (14a, 14b) which supplies the electrical consumers (18a, 18b) with electrical energy when the instantaneous operating voltage at the energy source (2, 4, 6) drops below a limit value. The rated voltage of the energy store (14a, 14b) is less than the rated voltage of the electrical energy source (2, 4, 6) and the electrical energy store (14a, 14b) is connected to the electrical energy source (2, 4, 6) via a switchover element (16a, 16b) which assumes the function of a diode. The switchover element (16a, 16b) ensures that a switchover from normal operation to an emergency operation takes place automatically and that, during normal operation, the electrical energy store (14a, 14b) is not charged unintentionally by the electrical energy source (6).
摘要翻译：本发明涉及一种具有电消耗器（18a，18b）的安全系统，其在正常操作中从电能源（2,4,6）供应电能。安全系统包括当能量源（2,4,6）上的瞬时工作电压低于极限值时向电用户（18a，18b）提供电能的电能存储器（14a，14b）。能量存储器（14a，14b）的额定电压小于电能源（2,4,6）的额定电压，并且电能存储器（14a，14b）连接到电能源（2， 4，6）通过假定二极管功能的切换元件（16a，16b）。切换元件（16a，16b）确保从正常操作切换到紧急操作自动进行，并且在正常操作期间，电能存储器（14a，14b）不被电能源（6）无意地充电，。

50. 发明授权

US5803234A Roller drive system for vehicle conveyor 失效
标题翻译：车辆输送机用滚筒驱动系统
公开(公告)号：US5803234A
公开(公告)日：1998-09-08
申请号：US609195
申请日：1996-03-01
申请人： Tadeusz Podkanski , Michael Graf
发明人： Tadeusz Podkanski , Michael Graf
IPC分类号： B65G13/06 , B65G13/12
CPC分类号： B65G13/065
摘要： A roller assembly including a roller and a support frame is removably mounted in a carrier attached to the floor of a vehicle. The roller is raised to an extended position so as to abut against a cargo unit load device when a roller drive system is activated and subsequently automatically lowered to a retracted position within the carrier when this system is deactivated. The roller is rotatably mounted on a support frame. Also mounted on this support frame is a DC motor which has an eccentric arm attached to its drive shaft. When the roller drive system is electrically activated, the DC motor as well as the roller drive motor are both activated, with the DC motor driving its arm against a post member to bring the frame to its extended position in the carrier. In this position, the roller is urged upwardly in abutment against the cargo unit load device. A capacitor is fully charged while the motors are activated. When the roller drive is deactivated, the capacitor is automatically connected to the DC motor to drive it in a reverse direction with the eccentric arm being rotated to permit the roller to fall to its retracted position.
摘要翻译：包括辊和支撑框架的辊组件可移除地安装在附接到车辆地板的承载件中。当滚筒驱动系统被启动并随后当该系统被停用时，滚筒被升高到延伸位置，以抵靠货物单元的装载装置，随后自动降低到载体内的缩回位置。辊可旋转地安装在支撑框架上。还安装在该支撑架上的是具有连接到其驱动轴上的偏心臂的直流电动机。当辊驱动系统被电激活时，直流电动机以及辊驱动电动机都被启动，直流电动机将其臂抵靠柱件驱动，使框架在其延伸的位置上。在这个位置上，辊被向上推压以抵靠货物装载装置。当电机被激活时，电容器充满电。当滚筒驱动器被禁用时，电容器自动连接到直流电机，以使反向旋转，同时使偏心臂旋转，以允许滚轮落到其缩回位置。

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