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41. 发明授权

US07974322B2 Nitride semiconductor laser diode 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：US07974322B2
公开(公告)日：2011-07-05
申请号：US12686839
申请日：2010-01-13
申请人： Tetsuzo Ueda , Daisuke Ueda
发明人： Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/2201
摘要： A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
摘要翻译：氮化物半导体激光器件包括：由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体，其具有形成在所述基板上的多个半导体层，所述半导体层叠体具有多量子阱活性层，所述多个半导体层中的每一个均由III-V族氮化物构成。半导体层叠体具有与{011}平面平行的平面，其是作为解理面的硅的平面取向，并且切割面构成小平面镜。

42. 发明申请

US20110037101A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20110037101A1
公开(公告)日：2011-02-17
申请号：US12667999
申请日：2009-03-27
申请人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01L29/205 , H01L29/80 , H01L29/737 , H01L29/20
CPC分类号： H01L29/7371 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/207 , H01L29/432 , H01L29/7787
摘要： A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.
摘要翻译：半导体器件包括未掺杂的GaN层（13），未掺杂的AlGaN层（14）和p型GaN层（15）。在p型GaN层（15）中，选择性地形成高电阻区域（15a）。可以通过引入过渡金属例如钛来增加高电阻区域（15a）的电阻。

43. 发明申请

US20100327320A1 NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氮化物半导体器件
公开(公告)号：US20100327320A1
公开(公告)日：2010-12-30
申请号：US12879565
申请日：2010-09-10
申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/80
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/452 , H01L29/7787
摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

44. 发明授权

US07817081B2 Radar apparatus, method for controlling the same, and vehicle including the same 有权
标题翻译：雷达装置，其控制方法以及包括该雷达装置的车辆
公开(公告)号：US07817081B2
公开(公告)日：2010-10-19
申请号：US12207123
申请日：2008-09-09
申请人： Kenichi Inoue , Daisuke Ueda
发明人： Kenichi Inoue , Daisuke Ueda
IPC分类号： G01S13/00 , G01S13/58 , G01S13/08 , H04B1/00 , H04K1/10 , H04L27/10 , H03D3/00
CPC分类号： G01S13/931 , G01S13/325 , G01S2013/9375 , G01S2013/9378 , G01S2013/9385
摘要： Provided is a radar apparatus that detects an object, and includes: an oscillating unit for generating carrier waves; first and second transmission units for spreading the carrier waves, respectively using a first pseudo-random code and a second pseudo-random code different from the first pseudo-random code; a first transmission antenna for transmitting the carrier waves spread by the first transmission unit; a second transmission antenna for transmitting the carrier waves spread by the second transmission unit and have a directional characteristic different from that of the carrier waves transmitted by the first transmission antenna; a reception antenna for receiving reflected waves that are the carrier waves that have been transmitted by the first and second transmission antennas and have been reflected from the object; and a reception unit for despreading the reflected waves, using the first pseudo-random code and despreading the reflected waves, using the second pseudo-random code.
摘要翻译：提供一种检测物体的雷达装置，包括：用于产生载波的振荡单元; 分别使用与第一伪随机码不同的第一伪随机码和第二伪随机码扩展载波的第一和第二传输单元; 第一发送天线，用于发送由第一发送单元扩展的载波; 第二发送天线，用于发送由第二发送单元扩展的载波，并且具有与由第一发送天线发送的载波的方向特性不同的方向特性; 接收天线，用于接收作为由第一和第二发送天线发送并已从物体反射的载波的反射波; 以及接收单元，用于使用第一伪随机码解扩反射波，并使用第二伪随机码解扩反射波。

45. 发明授权

US07808169B2 Electron emitting device and electromagnetic wave generating device using the same 有权
标题翻译：电子发射器件和使用其的电磁波发生器件
公开(公告)号：US07808169B2
公开(公告)日：2010-10-05
申请号：US11620076
申请日：2007-01-05
申请人： Yutaka Hirose , Daisuke Ueda
发明人： Yutaka Hirose , Daisuke Ueda
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J2201/30469 , Y10T29/49002
摘要： Provided is an electron emitting device which can achieve high electron emission efficiency even in the case where excitation energy is low. The device includes a carbon nanotube layer which is formed on an SiC substrate and is made up of plural carbon nanotubes vertically oriented with respect to a surface of the SiC substrate; an MgO layer which is formed on and touches the carbon nanotube layer; an ohmic electrode which is connected to the carbon nanotube layer; an electrode which is facing the MgO layer with an air-gap between the MgO layer and the electrode; and a voltage source which applies a voltage between the electrode and the ohmic electrode.
摘要翻译：提供了即使在激发能量低的情况下也能够实现高电子发射效率的电子发射器件。该装置包括碳纳米管层，其形成在SiC衬底上并且由相对于SiC衬底的表面垂直取向的多个碳纳米管构成; 形成在碳纳米管层上并与其接触的MgO层; 连接到碳纳米管层的欧姆电极; 在MgO层和电极之间具有气隙的面向MgO层的电极; 以及在电极和欧姆电极之间施加电压的电压源。

46. 发明申请

US20100237967A1 CIRCUIT DEVICE 失效
标题翻译：电路设备
公开(公告)号：US20100237967A1
公开(公告)日：2010-09-23
申请号：US12681284
申请日：2008-07-29
申请人： Hiroaki Ueno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01P3/08
CPC分类号： H01L21/02118 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/312 , H01L23/5222 , H01L23/5223 , H01L23/66 , H01L28/40 , H01L2223/6627 , H01L2223/6644 , H01L2924/0002 , H01L2924/19032 , H01L2924/3011 , H01P3/003 , H01P3/081 , H01L2924/00
摘要： A circuit device includes a substrate 11, and a transmission line 10. The transmission line 10 includes a dielectric film 13 formed on the substrate 11, and a signal line formed on the dielectric film 13. The dielectric film 13 includes a nano-composite film in which particles of a first material are dispersed in a second material.
摘要翻译：电路装置包括基板11和传输线10.传输线10包括形成在基板11上的电介质膜13和形成在电介质膜13上的信号线。电介质膜13包括纳米复合膜其中第一材料的颗粒分散在第二材料中。

47. 发明申请

US20100212562A1 Workpiece processing attachment and sewing machine 有权
标题翻译：工件加工附件和缝纫机
公开(公告)号：US20100212562A1
公开(公告)日：2010-08-26
申请号：US12656237
申请日：2010-01-21
申请人： Akifumi Nakashima , Daisuke Ueda
发明人： Akifumi Nakashima , Daisuke Ueda
IPC分类号： D05B23/00 , D05B21/00 , D05B69/00 , D05B29/00
CPC分类号： D05B55/06 , D05B23/00 , D05D2303/00
摘要： A workpiece processing attachment detachably attached to a sewing machine including a presser foot, a presser bar having the presser foot detachably attached to its lower end, a presser bar vertically moving mechanism, a sewing needle, a needle clamp having the sewing needle detachably attached thereto, a needle bar having the needle clamp attached thereto, and a needle bar vertically moving mechanism, the workpiece processing attachment, including a body detachably attached to the lower end of the presser bar; a connecting element capable of being connected to the needle clamp and movable up and down with the needle bar being moved up and down by the needle bar vertically moving mechanism; a needle penetrating the workpiece to form a hole in the workpiece; and a needle vertically moving mechanism moving the needle up and down by the up and down movement of the connecting element.
摘要翻译：一种可拆卸地安装在缝纫机上的工件加工附件，该缝纫机包括压脚，压脚可拆卸地安装在其下端，压杆垂直移动机构，缝纫针，具有可拆卸地连接到其上的缝纫针的针夹具有附接有针夹的针杆和针杆上下移动机构，所述工件加工附件包括可拆卸地附接到所述按压杆的下端的主体; 连接元件，其能够连接到针夹并且可通过针杆上下移动机构上下移动而上下移动; 针穿过工件在工件上形成一个孔; 并且针垂直移动机构通过连接元件的上下移动来上下移动针。

48. 发明申请

US20100189948A1 OPTICAL INFORMATION RECORDING MEDIUM, AND TWO-PHOTON ABSORBING MATERIAL 审中-公开
标题翻译：光信息记录介质和双光子吸收材料
公开(公告)号：US20100189948A1
公开(公告)日：2010-07-29
申请号：US12452625
申请日：2009-05-11
申请人： Takashi Iwamura , Mitsuaki Oyamada , Daisuke Ueda
发明人： Takashi Iwamura , Mitsuaki Oyamada , Daisuke Ueda
IPC分类号： B32B3/02
CPC分类号： G11B7/244 , B82Y10/00 , G11B7/00452 , G11B7/245
摘要： The invention allows two-photon absorption to occur in response to a short-wavelength light beam. The recording layer (101) of the optical information recording medium (100) of the invention contains, as a two-photon absorbing material, a compound represented by general formula (1) having a hexadiyne structure that includes in the center thereof two acetylene groups connected by a δ-bond. At the time of information recording where a recording mark (RM) is formed in the recording layer (101), two-photon absorption occurs in response to a condensed, short-wavelength recording light, whereby the recording mark (RM) is formed.
摘要翻译：本发明允许响应于短波长光束而发生双光子吸收。本发明的光信息记录介质（100）的记录层（101）含有作为双光子吸收材料的通式（1）表示的化合物，其具有在其中心具有两个乙炔基的己二炔结构通过δ键连接。在记录层（101）中形成记录标记（RM）的信息记录时，响应于冷凝的短波长记录光而发生双光子吸收，由此形成记录标记（RM）。

49. 发明授权

US07764340B2 Optical interference filter that performs excellent color separation, and liquid crystal display, electroluminescence display and projection display apparatus having the optical interference filter 有权
标题翻译：具有优异的分色性的光干涉滤光器，具有光干涉滤光器的液晶显示器，电致发光显示器和投影显示装置
公开(公告)号：US07764340B2
公开(公告)日：2010-07-27
申请号：US11898408
申请日：2007-09-12
申请人： Yuichi Inaba , Takumi Yamaguchi , Daisuke Ueda
发明人： Yuichi Inaba , Takumi Yamaguchi , Daisuke Ueda
IPC分类号： G02F1/1335
CPC分类号： G02B5/285 , G02F2001/133521 , H01L27/322 , H05B33/22
摘要： An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.
摘要翻译：一种光学干涉滤光器，其主要成分是膜元件。该薄膜构件包括多个沿着表面方向离散布置的窗口区域，该多个窗口区域使用光学干涉的作用选择性地发送具有基本上属于可见光谱的波段的光，该多个窗口区域沿离散方向布置在表面方向上，并且一个或多个边界区域使用光学干涉的作用选择性地发射具有基本上属于不可见光谱的不可见光谱的波段的光，所述一个或多个边界区域位于相邻窗口区域之间。

50. 发明申请

US20100172387A1 NITRIDE SEMICONDUCTOR LASER DIODE 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：US20100172387A1
公开(公告)日：2010-07-08
申请号：US12686839
申请日：2010-01-13
申请人： Tetsuzo UEDA , Daisuke Ueda
发明人： Tetsuzo UEDA , Daisuke Ueda
IPC分类号： H01S5/20 , H01S5/323
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/2201
摘要： A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
摘要翻译：氮化物半导体激光器件包括：由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体，其具有形成在所述基板上的多个半导体层，所述半导体层叠体具有多量子阱活性层，所述多个半导体层中的每一个均由III-V族氮化物构成。半导体层叠体具有与{011}平面平行的平面，其是作为解理面的硅的平面取向，并且切割面构成小平面镜。

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