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41. 发明申请

US20090310244A1 THIN-FILM MAGNETIC HEAD FOR MICROWAVE ASSIST AND MICROWAVE-ASSISTED MAGNETIC RECORDING METHOD 审中-公开
标题翻译：用于微波辅助的薄膜磁头和微波辅助磁记录方法
公开(公告)号：US20090310244A1
公开(公告)日：2009-12-17
申请号：US12140670
申请日：2008-06-17
申请人： Koji Shimazawa , Tsutomu Chou , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Tsutomu Chou , Yoshihiro Tsuchiya
IPC分类号： G11B21/02 , G11B5/127 , G11B5/48
CPC分类号： G11B5/314 , G11B2005/0024
摘要： Provided is a thin-film magnetic head that can stably generate electromagnetic field with a desired frequency, even under the existence of significantly strong write field with frequently reversed direction. The head comprises an electromagnetic-field generating element between the first and second magnetic poles. The electromagnetic-field generating element comprises a spin-wave excitation layer provided adjacent to the first magnetic pole and having a magnetization with its direction varied according to external magnetic fields, for generating an high frequency electromagnetic field by an excitation of spin wave. And a magnetization of the spin-wave excitation layer is biased in a direction substantially perpendicular to its layer surface by a portion of magnetic field generated from the first magnetic pole, and pin-wave excitation current flows in the electromagnetic-field generating element in a direction from the second pole to the first pole.
摘要翻译：本发明提供一种薄膜磁头，即使存在具有频繁反转方向的强大写入场，也能够稳定地产生期望频率的电磁场。头部包括在第一和第二磁极之间的电磁场产生元件。电磁场产生元件包括与第一磁极相邻设置并具有根据外部磁场而变化的磁化的自旋波激励层，用于通过自旋波的激发产生高频电磁场。并且自旋波激发层的磁化通过从第一磁极产生的磁场的一部分在基本上垂直于其层表面的方向上偏置，并且针波激励电流在电磁场产生元件中流动方向从第二极到第一极。

42. 发明申请

US20090303640A1 MAGNETO-RESISTANCE EFFECT ELEMENT PROVIDED WITH CURRENT LIMITING LAYER INCLUDING MAGNETIC MATERIAL 审中-公开
标题翻译：具有电流限制层的磁阻效应元件，包括磁性材料
公开(公告)号：US20090303640A1
公开(公告)日：2009-12-10
申请号：US12109651
申请日：2008-04-25
申请人： Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa , Toshiyuki Ayukawa , Tsuyoshi Ichiki
发明人： Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa , Toshiyuki Ayukawa , Tsuyoshi Ichiki
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.
摘要翻译：磁阻效应元件包括介于第一和第二磁性层之间的第一磁性层，第二磁性层和间隔层。磁阻效应元件被配置为允许感测电流在垂直于第一磁性层，第二磁性层和间隔层的膜平面的方向上流动，使得第一磁性层的磁化方向并且第二磁性层的磁化方向根据外部磁场而变化。本发明旨在提供一种确保对感应电流的高电阻的磁阻效应元件，同时限制限流层对磁性层的影响，从而实现高的磁阻比。

43. 发明授权

US07525773B2 Thin film magnetic head, head gimbal assembly, and hard disk drive having a dual spin-valve magneto-resistive element 失效
标题翻译：薄膜磁头，头万向节组件和具有双自旋阀磁阻元件的硬盘驱动器
公开(公告)号：US07525773B2
公开(公告)日：2009-04-28
申请号：US11105554
申请日：2005-04-14
申请人： Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3903 , H01L43/08
摘要： A thin film magnetic head includes a dual spin-valve magneto-resistive element. The dual spin-valve magneto-resistive element has a dual spin-valve magneto-resistive effect multilayer film composed of a first antiferromagnetic layer, a first fixed magnetic layer being a synthetic ferrimagnetic fixed layer, a first nonmagnetic layer, a soft magnetic layer, a second nonmagnetic layer, and a second fixed magnetic layer being a synthetic ferrimagnetic fixed layer. A stacked film thickness relationship of the first fixed magnetic layer, a stacked film thickness relationship of the second fixed magnetic layer, and a magnetostrictive constant are determined, and it is configured such that a static magnetic field produced from the first fixed magnetic layer and a current magnetic field generated by a sense current act to assist magnetization of the second fixed magnetic layer. Therefore, it is possible to obtain a thin film magnetic head of which the reproduction output is large while gap narrowing and track narrowing are achieved and of which the reliability is high with enhanced stability in pinning fixation.
摘要翻译：薄膜磁头包括双自旋阀磁阻元件。双自旋阀磁阻元件具有由第一反铁磁性层，第一固定磁性层，合成亚铁磁性固定层，第一非磁性层，软磁性层，第二非磁性层和作为合成铁磁性固定层的第二固定磁性层。确定第一固定磁性层的层叠膜厚度关系，第二固定磁性层的层叠膜厚度关系和磁致伸缩常数，并且构造成使得从第一固定磁性层和由感测电流产生的电流磁场用于辅助第二固定磁性层的磁化。因此，可以获得再现输出大的薄膜磁头，同时实现间隙变窄和轨道变窄，并且其可靠性高，在钉扎固定方面具有增强的稳定性。

44. 发明申请

US20090073616A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP STRUCTURE AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP结构和磁盘系统的磁阻效应器件
公开(公告)号：US20090073616A1
公开(公告)日：2009-03-19
申请号：US11856438
申请日：2007-09-17
申请人： Koji Shimazawa , Tsutomu Chou , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Tsutomu Chou , Yoshihiro Tsuchiya
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/1278 , G11B5/3116 , G11B5/3912 , H01F10/325
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and an upper shield layer and a lower shield layer located with that magneto-resistive effect unit sandwiched between them, with a sense current applied in a stacking direction, wherein the magneto-resistive effect unit comprises a nonmagnetic metal intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with that nonmagnetic metal intermediate layer sandwiched between them, wherein the first ferromagnetic layer and said second ferromagnetic layer are exchange coupled via the nonmagnetic metal intermediate layer such that where there is no bias magnetic field applied as yet, their magnetizations are anti-parallel with each other, and at least one of the upper shield layer and the lower shield layer has an inclined magnetization structure with its magnetization inclining with respect to a track width direction, so that by the magnetization of that inclined magnetization structure, a bias magnetic field can be applied to the first ferromagnetic layer and the second ferromagnetic layer. It is thus possible to obtain a magneto-resistive effect device of improved reliability that enables a structure capable of having a narrowed read gap (the gap between the upper shield and the lower shield) to be adopted to meet the recently demanded ultra-high recording density, allows a stable bias magnetic field to be applied in simple structure, and obtain a stable magneto-resistive effect change.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及位于它们之间的该磁阻效应单元的上屏蔽层和下屏蔽层，其中感应电流沿堆叠方向施加，其中所述磁阻效应单元包括非磁性金属中间层，以及与夹在其间的非磁性金属中间层堆叠并形成的第一铁磁层和第二铁磁层，其中所述第一铁磁层和所述第二铁磁层经由非磁性金属中间层交换耦合，使得在没有施加偏压磁场的情况下，它们的磁化彼此反平行，并且上屏蔽层和下屏蔽层具有相对于其磁化倾斜的倾斜磁化结构轨道宽度方向，使得通过该倾斜磁化结构的磁化，可以将偏置磁场施加到第一铁磁层和第二铁磁层。因此，可以获得具有改善的可靠性的磁阻效应装置，使得能够采用能够具有窄的读取间隙（上屏蔽和下屏蔽之间的间隙）的结构来满足最近要求的超高记录密度，允许以简单的结构施加稳定的偏置磁场，并获得稳定的磁阻效应变化。

45. 发明申请

US20090059442A1 CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS 有权
标题翻译：具有特征自由层的CPP型磁阻效应元件
公开(公告)号：US20090059442A1
公开(公告)日：2009-03-05
申请号：US12045927
申请日：2008-03-11
申请人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface.
摘要翻译：磁场检测元件包括：堆叠，其包括其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层，夹在第一磁性层和第二磁性层之间的磁性中间层，在第一磁性层和第二磁性层之间产生磁阻效应的第一非磁性中间层和第二非磁性中间层，夹在第二磁性层和第三磁性层之间，第二非磁性中间层允许第二磁性层和第三磁性层交换耦合，使得其磁化方向在无磁场下彼此反平行，所述堆叠被适配成使得感测电流沿着这样的方向流动垂直于其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对，所述偏置磁性层沿垂直于所述空气轴承的方向向所述堆叠施加偏置磁场表面。

46. 发明申请

US20080117554A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080117554A1
公开(公告)日：2008-05-22
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/127
CPC分类号： G11B5/59683
摘要： The invention provides a giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them, wherein the free layer functions such that its magnetization direction changes depending on an external magnetic field, and the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between them, wherein the semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient, wherein the main ingredient zinc oxide contains at least one selected from among oxides containing a trivalent cation of Al2O3, Ga2O3, In2O3, and B2O3, and a tetravalent cation of TiO2. It is thus possible to make thicker the semiconductor oxide layer forming a part of the spacer layer while keeping the device's area resistivity low as desired, thereby offering the advantages: much higher MR performance with much less variable device's area resistivity, and much more improved film performance reliability.
摘要翻译：本发明提供一种具有包括间隔层的CPP结构的巨磁阻效应器件，以及一个彼此层叠的所述间隔层彼此层叠的固定磁化层和自由层，其中自由层的功能是使其磁化方向变化取决于外部磁场，并且间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层以及介于它们之间的半导体氧化物层，其中形成部分的半导体氧化物层的间隔层包含氧化锌作为主要成分，其中主要成分氧化锌含有选自含有三价阳离子的氧化物中的至少一种，其中含有三价阳离子的Al 2 O 3， Ga 2 O 3，以及B 2 O 3，以及B 2 O 3， SUB> 3 <！ - SIPO - >和TiO 2的四价阳离子。因此，可以使形成间隔层的一部分的半导体氧化物层变得更厚，同时保持器件的面积电阻率为期望的低，从而具有以下优点：MR性能更高，可变器件的面积电阻率更小得多，并且更多改进的膜性能可靠性。

47. 发明申请

US20080062557A1 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer 有权
标题翻译：具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
公开(公告)号：US20080062557A1
公开(公告)日：2008-03-13
申请号：US11698180
申请日：2007-01-26
申请人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/52 , G11B5/127 , G11B5/56
CPC分类号： G11B5/59683 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·m2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Omeg·m 2的范围，间隔层的导电率为133〜432S / cm。

48. 发明授权

US07029770B2 Exchange-coupled film, spin valve film, thin film magnetic head, magnetic head apparatus, and magnetic recording/reproducing apparatus 有权
标题翻译：交换膜，自旋阀膜，薄膜磁头，磁头装置和磁记录/再现装置
公开(公告)号：US07029770B2
公开(公告)日：2006-04-18
申请号：US10633669
申请日：2003-08-05
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Koichi Terunuma
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Koichi Terunuma
IPC分类号： G11B5/127
CPC分类号： B32B15/01 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996 , Y10T428/1143 , Y10T428/115
摘要： An exchange-coupled film has a ferromagnetic layer sandwich comprising a first ferromagnetic layer containing a ferromagnetic material of the body-centered cubic structure and a pair of second ferromagnetic layers containing a ferromagnetic material of the face-centered cubic structure and formed on respective sides of the first ferromagnetic layer; and an antiferromagnetic layer containing a disordered alloy and formed on one of the second ferromagnetic layers. It yields sufficient exchange coupling energy even in smaller thickness of the antiferromagnetic layer than before, whereby it becomes feasible to decrease the thickness of the exchange-coupled film.
摘要翻译：交换耦合膜具有铁磁层三明治，其包含含有体心立方结构的铁磁材料的第一铁磁层和包含面心立方结构的铁磁材料的一对第二铁磁层，并形成在第一铁磁层; 以及含有无序合金并形成在第二铁磁层之一上的反铁磁层。即使在比以前更小的反铁磁性层的厚度中也产生充分的交换耦合能力，从而可以减小交换膜的厚度。

49. 发明授权

US08472149B2 CPP type magneto-resistive effect device and magnetic disk system 有权
公开(公告)号：US08472149B2
公开(公告)日：2013-06-25
申请号：US11865384
申请日：2007-10-01
申请人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
发明人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

50. 发明授权

US08049997B2 Magnetoresistive element including a pair of free layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对自由层
公开(公告)号：US08049997B2
公开(公告)日：2011-11-01
申请号：US12285069
申请日：2008-09-29
申请人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
发明人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/3967 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.
摘要翻译：位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

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