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41. 发明申请

US20070021024A1 Method of manufacturing display panel and anode panel 审中-公开
标题翻译：显示面板和阳极面板的制造方法
公开(公告)号：US20070021024A1
公开(公告)日：2007-01-25
申请号：US11488624
申请日：2006-07-19
申请人： Atsushi Kazawa , Tatsuya Nagata , Takaaki Kitada , Shigemi Hirasawa , Takashi Naitou , Keiichi Kanazawa
发明人： Atsushi Kazawa , Tatsuya Nagata , Takaaki Kitada , Shigemi Hirasawa , Takashi Naitou , Keiichi Kanazawa
IPC分类号： H01J9/24
CPC分类号： H01J9/261 , H01J29/862 , H01J31/123
摘要： There is provided a method of manufacturing a display panel and an anode panel for improving reliability of a sealing portion of the display panel. Vacuuming (evacuation of air) is performed to inside of a cavity formed by a cathode panel and an anode panel in a state of viscosity in which a sealant melts and deforms in manufacturing of a display.
摘要翻译：提供一种制造显示面板和阳极面板的方法，用于提高显示面板的密封部分的可靠性。在由显示器的制造中密封剂熔化和变形的粘度的状态下，由阴极面板和阳极面板形成的空腔的内部进行抽真空（抽空）。

42. 发明授权

US07151319B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07151319B2
公开(公告)日：2006-12-19
申请号：US10876462
申请日：2004-06-28
申请人： Takashi Iida , Tatsuya Nagata , Seiji Miyamoto , Toshihiro Matsunaga
发明人： Takashi Iida , Tatsuya Nagata , Seiji Miyamoto , Toshihiro Matsunaga
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L23/50 , H01L23/49827 , H01L23/49838 , H01L2224/16 , H01L2924/01078 , H01L2924/15173 , H01L2924/15311 , H01L2924/3011
摘要： A BGA semiconductor device for high-speed operation and high pin counts has a base which is constituted by a core layer formed of wiring boards and surface layers provided on both sides of the core layer, and a semiconductor element mounted on the base. Through holes in a signal region of the core layer are disposed in an optimum through hole pattern in which power through holes and ground through holes are disposed adjacent to signal through holes.
摘要翻译：用于高速操作和高引脚数的BGA半导体器件具有由布线板形成的芯层和设置在芯层两侧的表面层构成的基底和安装在基底上的半导体元件。核心层的信号区域中的通孔设置在与信号通孔相邻的电源通孔和接地通孔中的最佳通孔图案中。

43. 发明申请

US20060238100A1 Flat panel display 审中-公开
标题翻译：平板显示器
公开(公告)号：US20060238100A1
公开(公告)日：2006-10-26
申请号：US11401222
申请日：2006-04-11
申请人： Motoyuki Miyata , Osamu Shiono , Yuichi Sawai , Takashi Naitou , Tatsuya Nagata , Keiich Kanazawa , Nobuhiko Hosotani , Yuichi Inoue , Hiroshi Ito
发明人： Motoyuki Miyata , Osamu Shiono , Yuichi Sawai , Takashi Naitou , Tatsuya Nagata , Keiich Kanazawa , Nobuhiko Hosotani , Yuichi Inoue , Hiroshi Ito
IPC分类号： H01J1/62
CPC分类号： C03C27/06 , B32B17/10009 , B32B17/10366 , B32B17/10376 , C03C3/095
摘要： The present invention has an object to provide a flat panel display which employs a high-strength glass material to realize a reduction in thickness and weight. The flat panel display includes two substrates SUB1 and SUB2 and a light emitter PMG provided between the two substrates. At least one of the two substrates is made of glass material containing SiO2 as its main component and 1 to 20 wt % of at least one selected from La, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
摘要翻译：本发明的目的是提供一种采用高强度玻璃材料实现厚度和重量减小的平板显示器。平板显示器包括两个基板SUB 1和SUB 2以及设置在两个基板之间的发光体PMG。两个基板中的至少一个由含有SiO 2作为其主要成分的玻璃材料和选自La，Sc，Y，Ce，Pr，Nd等的至少一种的1-20重量％ Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu。

44. 发明申请

US20050073323A1 Measuring method and apparatus of thin film thickness 审中-公开
标题翻译：薄膜厚度的测量方法和装置
公开(公告)号：US20050073323A1
公开(公告)日：2005-04-07
申请号：US10902132
申请日：2004-07-30
申请人： Ryuji Kohno , Tatsuya Nagata , Naoki Watase , Michihiro Watanabe
发明人： Ryuji Kohno , Tatsuya Nagata , Naoki Watase , Michihiro Watanabe
IPC分类号： G01B7/06 , G01R27/26 , H01L21/66
CPC分类号： G01R27/2605
摘要： In an apparatus for measuring thickness of a thin film, which is formed through a conductor, preventing the measurement from an error due to the curve or bend on a substrate surface or a moving surface of a stage, but without necessity of a large-scaled facility, an electric filed is applied between a probe 10 and a stage 8, so as to obtain an electrostatic capacitance of the substrate 3, an electrostatic capacitance of an insulating film, which is formed between the substrate 3, and an electrostatic capacitance defined starting from the substrate 3 to the thin film 4. The electrostatic capacitance between the substrate 3 and the thin film 4 is measured at plural numbers of places covering over the entire surface of the thin film 4. The probe 10 is so supported that the contact load “P” comes to be constant, by the probe 10 onto the thin film 4. A contact area of the probe 10 between the thin film 4 is calculated out through a predetermined equation, assuming the load “P” is constant. From respective electrostatic capacitances and the contact area measured, a distribution of thickness of the thin film 4 over the entire area thereof.
摘要翻译：在用于测量通过导体形成的薄膜厚度的装置中，防止测量由于基板表面或台的移动表面上的曲线或弯曲引起的误差，而不需要大尺寸在探针10和载物台8之间施加电场，以获得基板3的静电电容，形成在基板3之间的绝缘膜的静电电容与开始定义的静电电容从基板3到薄膜4.在覆盖在薄膜4的整个表面上的多个位置处测量基板3和薄膜4之间的静电电容。探针10被支撑为接触负载假定负载“P”是恒定的，则通过探针10将薄膜4固定在薄膜4上的探针10的接触区域。从相应的静电电容和测量的接触面积，薄膜4的整个面积的厚度分布。

45. 发明申请

US20050012782A1 Inkjet head and a method of manufacturing the same 失效
标题翻译：喷墨头及其制造方法
公开(公告)号：US20050012782A1
公开(公告)日：2005-01-20
申请号：US10890261
申请日：2004-07-14
申请人： Yasuhiro Yoshimura , Jun Nagata , Osamu Machida , Tatsuya Nagata
发明人： Yasuhiro Yoshimura , Jun Nagata , Osamu Machida , Tatsuya Nagata
IPC分类号： B41J2/16 , B41J2/045 , B41J2/055 , B41J2/14 , B41J2/04
CPC分类号： B41J2/14274 , B41J2002/14419
摘要： The disclosure is concerned with an inkjet head comprising; a chamber substrate for forming an ink flow passage; a diaphragm substrate including a diaphragm for pressurizing a pressure chamber disposed in the chamber substrate; and a nozzle substrate for jetting ink pressurized by the diaphragm, wherein the diaphragm substrate is made of silicon, the diaphragm is made of a material selected from the group of silicon oxide film and metal film, and the diaphragm is formed in the diaphragm substrate. The disclosure is also directed to a method of manufacturing the inkjet head.
摘要翻译：本公开涉及一种喷墨头，包括：用于形成油墨流动通道的室基板; 膜片基板，包括用于对设置在所述室基板中的压力室进行加压的隔膜; 以及用于喷射由所述隔膜加压的墨的喷嘴基板，其中所述隔膜基板由硅制成，所述隔膜由选自氧化硅膜和金属膜的材料制成，并且所述隔膜形成在所述隔膜基板中。本发明还涉及一种制造喷墨头的方法。

46. 发明授权

US06507204B1 Semiconductor testing equipment with probe formed on a cantilever of a substrate 失效
标题翻译：具有探针的半导体测试设备形成在基板的悬臂上
公开(公告)号：US06507204B1
公开(公告)日：2003-01-14
申请号：US09522477
申请日：2000-03-09
申请人： Masatoshi Kanamaru , Yoshishige Endo , Atsushi Hosogane , Tatsuya Nagata , Ryuji Kohno , Hideyuki Aoki , Akihiko Ariga
发明人： Masatoshi Kanamaru , Yoshishige Endo , Atsushi Hosogane , Tatsuya Nagata , Ryuji Kohno , Hideyuki Aoki , Akihiko Ariga
IPC分类号： G01R3102
CPC分类号： G01R1/06733 , G01R1/06727 , G01R1/06738 , G01R1/06761 , G01R1/06772 , G01R1/07342 , G01R3/00
摘要： The conventional semiconductor element testing equipment is arranged to position each probe accurately and need a burdensome operation for fixing, and includes only a limited number of electrode pads and chips to be tested at a batch. An equipment for testing a semiconductor element is arranged to keep each of electrode pads formed on a semiconductor element to be tested in direct contact with each of probes formed on a first substrate composed of silicon, one of electric connecting substrates disposed in the equipment. On the first substrate, each probe is formed on a cantilever and a wire is routed from a tip of each probe along a tip of the cantilever to the electrode pad formed on an opposite surface to the probe forming surface through an insulating layer.
摘要翻译：常规的半导体元件测试设备被布置成准确地定位每个探针，并且需要用于固定的繁重的操作，并且仅包括有限数量的待批测试的电极焊盘和芯片。布置了用于测试半导体元件的设备，以使每个形成在要测试的半导体元件上的电极焊盘与形成在由设置在设备中的电连接基板之一的硅构成的第一基板上形成的每个探针直接接触。在第一基板上，每个探针形成在悬臂上，并且从每个探针的尖端沿着悬臂的尖端布线到通过绝缘层与探针形成表面相对的表面上形成的电极焊盘。

47. 发明授权

US09402598B2 Ultrasound probe and ultrasound diagnostic device using same 有权
标题翻译：超声波探头和超声诊断装置使用相同
公开(公告)号：US09402598B2
公开(公告)日：2016-08-02
申请号：US13817541
申请日：2011-08-19
申请人： Yasuhiro Yoshimura , Tatsuya Nagata , Akifumi Sako
发明人： Yasuhiro Yoshimura , Tatsuya Nagata , Akifumi Sako
IPC分类号： A61B8/00 , A61B8/14 , B06B1/02 , G10K11/00 , G01N29/24 , A61B8/08
CPC分类号： A61B8/4494 , A61B8/0883 , A61B8/0891 , A61B8/14 , A61B8/4444 , B06B1/0292 , G01N29/2456 , G10K11/002
摘要： In order to obtain a high-resolution ultrasound diagnostic image while reducing the back side reflection of a ultrasound irradiated to the side opposite to the ultrasound transmission direction of an ultrasound transmission/reception device, disclosed is an ultrasound probe, wherein a substrate is provided thereon with a cavity, insulation layers having the cavity therebetween, and an upper layer electrode and a lower layer electrode having the cavity and the insulation layers therebetween, so as to form an ultrasound vibration element, the substrate is held by a backing with a low-modulus member therebetween, and a direct voltage and a alternating voltage are applied between the electrodes to vibrate the ultrasound vibration element, and wherein a mechanical impedance by the substrate and the low-modulus member has a substantially equal value as an acoustic impedance of the backing.
摘要翻译：为了获得高分辨率超声波诊断图像，同时减少了照射到与超声波发送/接收装置的超声波发送方向相反的一侧的超声波的背面反射，公开了一种超声波探头，其中在其上设置有基板具有空腔，其间具有空腔的绝缘层，以及具有所述空腔和所述绝缘层之间的上层电极和下层电极，以形成超声波振动元件，所述基板由背衬保持，模数构件之间，并且在电极之间施加直流电压和交流电压以振动超声波振动元件，并且其中由衬底和低模量构件的机械阻抗具有与背衬的声阻抗基本相等的值。

48. 发明授权

US07817811B2 Sound-electricity conversion device, array-type ultrasonic transducer, and ultrasonic diagnostic apparatus 有权
标题翻译：声电转换装置，阵列式超声波换能器和超声波诊断装置
公开(公告)号：US07817811B2
公开(公告)日：2010-10-19
申请号：US11341655
申请日：2006-01-30
申请人： Shinichiro Umemura , Takashi Azuma , Tatsuya Nagata , Hiroshi Fukuda , Toshiyuki Mine , Syuntaro Machida
发明人： Shinichiro Umemura , Takashi Azuma , Tatsuya Nagata , Hiroshi Fukuda , Toshiyuki Mine , Syuntaro Machida
IPC分类号： H04R25/00
CPC分类号： B06B1/0292
摘要： The present invention aims to stabilize sound-electricity conversion characteristics of a diaphragm-type sound-electricity conversion device as well as to decrease the noise level of an ultrasonic diagnostic apparatus using the sound-electricity conversion device. The sound-electricity conversion device is configured by a capacitor cell including a lower electrode formed on a silicon substrate and an upper electrode over the lower electrode, the lower and upper electrodes sandwiching a cavity. An electrode short-circuit prevention film is formed on the upper electrode on the cavity side. The electrode short-circuit prevention film is formed of a material with an electrical time constant shorter than 1 second and longer than 10 microseconds, such as silicon nitride containing a stoichiometrically excessive amount of silicon. As a result, the electrode short-circuit prevention film has small electric conductivity, and thus it is made possible to prevent the film from being charged with electric charge and to avoid the drift of the electric charge. Consequently, the sound-electricity conversion characteristics of the sound-electricity conversion device stabilize, and further the sound noise level of the ultrasonic diagnostic apparatus decreases.
摘要翻译：本发明旨在稳定隔膜式声电转换装置的声电转换特性，并且降低使用声电转换装置的超声波诊断装置的噪声水平。声电转换装置由包括形成在硅基板上的下电极和下电极上的上电极的电容器单元构成，下电极和上电极夹着空腔。在空腔侧的上部电极上形成电极短路防止膜。电极短路防止膜由电气时间常数短于1秒且长于10微秒的材料形成，例如含有化学计量过量的硅的氮化硅。结果，电极短路防止膜具有小的导电性，因此可以防止膜被充电并避免电荷的漂移。因此，声电转换装置的声电转换特性稳定，超声波诊断装置的声音噪声水平进一步降低。

49. 发明申请

US20100148594A1 Ultrasonic Transducer And Manufacturing Method Thereof 有权
标题翻译：超声波传感器及其制造方法
公开(公告)号：US20100148594A1
公开(公告)日：2010-06-17
申请号：US12714631
申请日：2010-03-01
申请人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki , Tatsuya Nagata
发明人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki , Tatsuya Nagata
IPC分类号： H02N11/00
CPC分类号： B06B1/0292
摘要： An ultrasonic transducer includes a first electrode, a second electrode, an insulating film disposed between the first and second electrodes, and a cavity disposed between the first and second electrodes. The insulating film includes a projection extending in the cavity, and a portion of the cavity is disposed between the projection and the first electrode. A portion of one of the first electrode and the second electrode has an opening corresponding to a position of the projection of the insulating film when viewed in plan view.
摘要翻译：超声换能器包括第一电极，第二电极，设置在第一和第二电极之间的绝缘膜，以及设置在第一和第二电极之间的空腔。绝缘膜包括在空腔中延伸的突起，并且空腔的一部分设置在突起和第一电极之间。当在平面图中观察时，第一电极和第二电极中的一个的一部分具有对应于绝缘膜的突起的位置的开口。

50. 发明申请

US20090301199A1 ULTRASONOGRAPHIC DEVICE 有权
标题翻译：超声波设备
公开(公告)号：US20090301199A1
公开(公告)日：2009-12-10
申请号：US11996532
申请日：2006-01-30
申请人： Takashi Azuma , Shinichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
发明人： Takashi Azuma , Shinichiro Umemura , Tatsuya Nagata , Hiroshi Fukuda , Shuntaro Machida , Toshiyuki Mine
IPC分类号： G01N29/34 , H02N1/08
CPC分类号： A61B8/4483 , A61B8/08 , A61B8/4281 , B06B1/0292 , G01N29/2431 , G01S15/00
摘要： The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103). The series of operations is controlled by the controller (104), and thus sensitivity variation caused by difference in the changes with elapsed time, particularly between the plural transducers, is calibrated.
摘要翻译：由作为基本单元的隔膜电声换能器（101）构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响，导致主光束灵敏度的漂移，由于声学噪声水平的上升引起的声学SN比的降低，以及超声波束的方向性的劣化。为了解决这个问题，提供一种充电控制器（充电监视器211）来控制电声换能器（101）中的电荷。充电监视部（102）监视充电量的变化。当充电量的变化小时，通过例如将接收信号乘以对应于变化量的校准系数，由控制器（104）校准发射灵敏度或接收灵敏度。此外，当电荷量的变化大时，例如，电荷可以从电荷发射体（103）重新发射。一系列操作由控制器（104）控制，因此校正了由于经过时间的变化，特别是多个换能器之间的差异引起的灵敏度变化。

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