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41. 发明申请

US20060131648A1 Ultra thin film SOI MOSFET having recessed source/drain structure and method of fabricating the same 审中-公开
标题翻译：具有凹陷源极/漏极结构的超薄膜SOI MOSFET及其制造方法
公开(公告)号：US20060131648A1
公开(公告)日：2006-06-22
申请号：US11137396
申请日：2005-05-26
申请人： Chang Ahn , Wonju Cho , Kiju Im , Jong Yang , In Baek , Seong Lee , Sung Baek
发明人： Chang Ahn , Wonju Cho , Kiju Im , Jong Yang , In Baek , Seong Lee , Sung Baek
IPC分类号： H01L27/12
CPC分类号： H01L29/66772 , H01L29/66636 , H01L29/78618
摘要： There are provided an ultra thin film silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) having a recessed source/drain structure, and a method of fabricating the same. The ultra thin film SOI MOS transistor includes a semiconductor substrate; a buried insulating layer disposed on the semiconductor substrate, and formed recessed except for a center portion thereof; an ultra thin film single crystalline silicon layer pattern disposed on the recessed buried insulating layer; a gate stack disposed on the ultra thin film single crystalline silicon layer pattern, and including a gate insulating layer pattern and a gate conductive layer pattern, which are sequentially stacked; a gate spacer layer disposed on sidewalls of the gate stack; and a recessed source/drain region disposed on the recessed buried insulating layer, and formed to overlap a bottom surface portion of the ultra thin film single crystalline silicon layer pattern, which does not overlap the center portion of the recessed buried insulating layer.
摘要翻译：提供了具有凹陷的源极/漏极结构的超薄膜绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）及其制造方法。超薄膜SOI MOS晶体管包括半导体衬底; 掩埋绝缘层，设置在所述半导体衬底上，除了其中心部分外形成凹陷; 设置在凹入的掩埋绝缘层上的超薄膜单晶硅层图案; 设置在超薄膜单晶硅层图案上的栅堆叠，并且包括依次层叠的栅极绝缘层图案和栅极导电层图案; 设置在所述栅极堆叠的侧壁上的栅极间隔层; 以及凹陷的源极/漏极区，设置在所述凹入的掩埋绝缘层上，并且形成为与所述超薄膜单晶硅层图案的底表面部分重叠，所述底表面部分不与所述凹入的绝缘层的中心部分重叠。

42. 发明申请

US20060131621A1 Device using ambipolar transport in SB-MOSFET and method for operating the same 失效
标题翻译：在SB-MOSFET中使用双极传输的器件及其操作方法
公开(公告)号：US20060131621A1
公开(公告)日：2006-06-22
申请号：US11187654
申请日：2005-07-22
申请人： Jae Shin , Moon Jang , Yark Kim , Seong Lee
发明人： Jae Shin , Moon Jang , Yark Kim , Seong Lee
IPC分类号： H01L31/112
CPC分类号： H01L29/7839 , G11C11/56
摘要： A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (−) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.
摘要翻译：提供了使用SB-MOSFET的双极运输的装置及其操作方法。 SB-MOSFET包括：硅沟道区; 源极和漏极在沟道区域的两侧接触并由包括金属层的材料形成; 以及形成在沟道区上的栅极，介于其间的栅介质层。正极（+），0或负（ - ）栅极电压选择性地施加到栅极，当施加负阈值电压和正阈值电压之间的栅极电压时，通道变为截止状态，并且通道变为第一个当门电压低于负阈值电压或高于正阈值电压时，状态和第二导通状态。因此，可以实现三种电流状态，即空穴电流，电子电流，无电流。 SB-MOSFET可以应用于多位存储器和/或多位逻辑器件。

43. 发明申请

US20060118899A1 Schottky barrier tunnel single electron transistor and method of manufacturing the same 失效
公开(公告)号：US20060118899A1
公开(公告)日：2006-06-08
申请号：US11196180
申请日：2005-08-03
申请人： Moon Jang , Yark Kim , Jae Shin , Seong Lee
发明人： Moon Jang , Yark Kim , Jae Shin , Seong Lee
IPC分类号： H01L31/07
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/872
摘要： Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

44. 发明申请

US20060117660A1 Small cylindrical reformer 有权
公开(公告)号：US20060117660A1
公开(公告)日：2006-06-08
申请号：US11296061
申请日：2005-12-06
申请人： Tae Woo , Young Yoon , Seong Lee , Il Kim , Keun Choi
发明人： Tae Woo , Young Yoon , Seong Lee , Il Kim , Keun Choi
IPC分类号： B01J7/00
CPC分类号： B01J8/0465 , B01J8/0496 , B01J19/249 , B01J2208/00309 , B01J2208/00495 , B01J2208/00504 , B01J2208/00513 , B01J2208/0053 , B01J2219/00155 , B01J2219/2454 , B01J2219/2465 , B01J2219/2466 , B01J2219/2481 , B01J2219/2485 , C01B3/384 , C01B3/48 , C01B3/583 , C01B2203/0233 , C01B2203/0283 , C01B2203/044 , C01B2203/047 , C01B2203/0816 , C01B2203/1064 , C01B2203/107 , C01B2203/1076 , C01B2203/1288 , C01B2203/142 , C01B2203/82 , Y02P20/124 , Y02P20/129
摘要： A small cylindrical reformer according to the embodiments of the present invention are suitable for use in the production of hydrogen from fossil fuels for a small fuel cell power plant. In the small cylindrical reformer, a reforming reactor, a water gas shift reactor (high temperature or low temperature), a combustor, a heat exchanger, a steam generator, etc., may be integrated in a single container to form an optimal heat exchanging network, minimize heat loss and optimize heat exchange efficiency. Thereby, the reformer is designed to be easily processed and manufactured and to have a compact size, thus realizing high efficiency, light weight and ease of mass production.

45. 发明申请

US20060091408A1 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US20060091408A1
公开(公告)日：2006-05-04
申请号：US11204226
申请日：2005-08-16
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
IPC分类号： H01L29/22
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

46. 发明申请

US20050141390A1 Spherical aberration compensation actuator and optical pickup system 有权
标题翻译：球面像差补偿执行器和光学拾取系统
公开(公告)号：US20050141390A1
公开(公告)日：2005-06-30
申请号：US11027522
申请日：2004-12-29
申请人： Seong Lee , In Choi , Gin Kim , Kwan Park
发明人： Seong Lee , In Choi , Gin Kim , Kwan Park
IPC分类号： G11B7/085 , G11B7/09 , G11B7/135 , G11B7/00
CPC分类号： G11B7/1378 , G11B7/0925 , G11B7/13927
摘要： A spherical aberration compensation actuator and an optical pickup system are provided. The spherical aberration compensation actuator mounts an element for compensating a spherical aberration and operates to a single-axis direction on an optical path using electromagnetic force. The optical pickup system includes a laser diode, an object lens, a spherical aberration compensation actuator, an optical path changer, and an optical detector. The spherical aberration compensation actuator is installed on an optical path between the laser diode and the object lens and includes a lens holder having a spherical aberration compensation element for compensating a spherical aberration generated due to light passing through the object lens and operating in an optical-axis direction using electromagnetic force.
摘要翻译：提供球面像差补偿致动器和光拾取系统。球面像差补偿致动器安装用于补偿球面像差的元件，并且使用电磁力在光路上对单轴方向进行操作。光学拾取系统包括激光二极管，物镜，球面像差补偿致动器，光路改变器和光学检测器。球面像差补偿致动器安装在激光二极管和物镜之间的光路上，并且包括具有球面像差补偿元件的透镜保持器，用于补偿由于通过物镜的光而产生的球面像差，轴方向使用电磁力。

47. 发明授权

US06863707B2 Method of forming tungsten-coated W—Cu composite powder 有权
标题翻译：形成钨涂层W-Cu复合粉末的方法
公开(公告)号：US06863707B2
公开(公告)日：2005-03-08
申请号：US10430067
申请日：2003-05-06
申请人： Seong Lee , Moon-Hee Hong , Joon-Woong Noh , Eun-Pyo Kim , Hung-Sub Song , Woon-Hyung Baek
发明人： Seong Lee , Moon-Hee Hong , Joon-Woong Noh , Eun-Pyo Kim , Hung-Sub Song , Woon-Hyung Baek
IPC分类号： B22F9/00 , B22F1/00 , B22F1/02 , B22F3/22 , B22F9/22 , C22C1/04 , B22F9/04
CPC分类号： B22F3/225 , B22F1/025 , B22F9/22 , B22F2998/00 , B22F2998/10 , B22F2999/00 , C22C1/045 , B22F3/22 , B22F9/04 , B22F3/1017
摘要： Disclosed is a method of forming a W—Cu composite powder having a Cu particle surrounded by tungsten by mixing and pulverizing tungsten oxide powder and copper oxide powder using turbular mixing or ball milling, reducing the Cu powder firstly at 200˜400° C. under a hydrogen atmosphere or a reducing gas environment including hydrogen, generating W nuclei on the reduced Cu powder at 500˜700° C., and growing the generated W nuclei at 750˜1080° C. as well as a use of the same for the use of powder injection molding.
摘要翻译：公开了一种通过使用湍流混合或球磨混合粉碎氧化钨粉末和氧化铜粉末来形成具有被钨包围的Cu颗粒的W-Cu复合粉末的方法，首先在200〜400℃下还原Cu粉末氢气氛或含有氢气的还原气体环境，在500〜700℃的还原Cu粉末上产生W核，并在750〜1080℃下生长生成的W核，并将其用于使用粉末注射成型。

48. 发明申请

US20050009250A1 Ultra short channel field effect transistor and method of fabricating the same 有权
标题翻译：超短沟道场效应晶体管及其制造方法
公开(公告)号：US20050009250A1
公开(公告)日：2005-01-13
申请号：US10833452
申请日：2004-04-27
申请人： Wonju Cho , Seong Lee , Jong Yang , Jihun Oh , Kiju Im , Chang Anh
发明人： Wonju Cho , Seong Lee , Jong Yang , Jihun Oh , Kiju Im , Chang Anh
IPC分类号： H01L21/308 , H01L21/00 , H01L21/28 , H01L21/306 , H01L21/316 , H01L21/336 , H01L21/84 , H01L29/04 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78696 , H01L21/28114 , H01L21/30608 , H01L29/045 , H01L29/1033 , H01L29/42376 , H01L29/4908 , H01L29/66553 , H01L29/66636 , H01L29/66772
摘要： Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.
摘要翻译：提供了具有超短沟道长度的MOSFET及其制造方法。超短沟道MOSFET具有三维结构的硅线沟道区，以及形成在由硅线沟道区的两侧形成的硅导电层中的源极/漏极结。此外，包括在其间具有高介电常数的栅极绝缘层，以及连接到源极/漏极结的源极和漏极，形成在硅线沟道区的上表面上的栅电极。通过利用取决于硅的平面取向的不同蚀刻速率，硅线沟道区域形成有三角形或梯形截面。源极/漏极结通过固态扩散方法形成。

49. 发明授权

US5970307A Sintering method for tungsten-nickel-manganese type heavy alloy 失效
标题翻译：钨镍锰型重合金烧结法
公开(公告)号：US5970307A
公开(公告)日：1999-10-19
申请号：US841717
申请日：1997-04-30
申请人： Moon Hee Hong , Woon Hyung Baek , Joon Woong Noh , Heung Sub Song , Seong Lee , Eun Pyo Kim
发明人： Moon Hee Hong , Woon Hyung Baek , Joon Woong Noh , Heung Sub Song , Seong Lee , Eun Pyo Kim
IPC分类号： B22F3/00 , B22F3/10 , C22C1/04 , B22F3/12
CPC分类号： B22F3/101 , C22C1/045
摘要： A sintering method for a W--Ni--Mn type heavy alloy, including controlling the deoxidization of tungsten and nickel under an inert atmosphere, changing to a hydrogen atmosphere at above a temperature at which manganese is deoxidized and simultaneously deoxidizing tungsten, nickel and manganese, and sintering by raising the temperature, resulting in the fabrication of a sintered heavy alloy having a 100% relative theoretical density.
摘要翻译：一种W-Ni-Mn型重合金的烧结方法，其包括在惰性气氛下控制钨和镍的脱氧，在高于锰脱氧并同时使钨，镍和锰脱氧的温度下变为氢气氛，并通过提高温度进行烧结，从而制造具有100％相对理论密度的烧结重金属合金。

50. 发明申请

US20080064354A1 Forward and Reverse Link Automatic Power Controlled Repeater and Method 有权
标题翻译：前向和反向链路自动功率控制中继器和方法
公开(公告)号：US20080064354A1
公开(公告)日：2008-03-13
申请号：US11943694
申请日：2007-11-21
申请人： Seong Lee , Doo Moon , Mi Lee , Jae Koo
发明人： Seong Lee , Doo Moon , Mi Lee , Jae Koo
IPC分类号： H04B1/18
CPC分类号： H04W52/46 , H04B7/15535 , H04W52/242 , H04W52/325
摘要： In an apparatus to measure a path loss between base-station and repeater, forward and reverse link automatic power controlled repeater of the present invention is comprising that a repeater control part means for controlling the repeater run and to process forward and reverse gain of the repeater using received information; a mobile communication modem means for transferring base-station signal information and base-station power transmission, and providing a wireless connection pathway of the repeater control part; a repeater element management system (EMS) means for transferring an information of base-station with extract to the repeater control part and to exchange of information with the repeater control part to control a repeater through the modem.
摘要翻译：在本发明的正向和反向链路自动功率控制中继器的测量装置中，测量基站与中继器之间的路径损耗，包括：中继器控制部分，用于控制中继器的运行和处理中继器的正向和反向增益使用收到的信息; 移动通信调制解调器装置，用于传送基站信号信息和基站功率传输，以及提供中继器控制部分的无线连接路径; 中继器元件管理系统（EMS）装置，用于将具有提取的基站的信息传送到中继器控制部分，并与中继器控制部分交换信息以通过调制解调器来控制中继器。

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