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41. 发明授权

US07172932B2 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产工艺及生产设备
公开(公告)号：US07172932B2
公开(公告)日：2007-02-06
申请号：US10862399
申请日：2004-06-08
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
摘要翻译：提供一种使用薄膜半导体器件制造图像显示装置的方法，其包括在基板上形成多晶半导体薄膜。形成基本上带状的晶体，其通过沿着衬底扫描CW激光束而沿与CW激光束的扫描方向大致平行的方向使晶粒生长，从而将CW激光束照射到形成在基板上的多晶半导体薄膜。

42. 发明申请

US20050244996A1 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US20050244996A1
公开(公告)日：2005-11-03
申请号：US11172958
申请日：2005-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR 1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光光束被重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的分立的重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等的有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

43. 发明授权

US06949419B2 Display device and a method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US06949419B2
公开(公告)日：2005-09-27
申请号：US10778082
申请日：2004-02-17
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.
摘要翻译：一种图像显示装置，包括显示像素块和与其周边的电路块。每块具有由高性能薄膜晶体管制成的电路。显示像素块和包括显示装置的四个角的外围电路块形成在具有小电路占用表面积的电路内置型薄膜晶体管的图像显示装置基板上。在显示像素块和电路块的整个或部分表面上设置包括各向异性晶体生长并且在其纵向方向上与电流方向对齐的晶粒的多晶硅薄膜的薄膜晶体管的电路。纵向方向与块内的水平或垂直方向对准，并且在从相同的直线观察时，在水平和垂直方向上排列的块可以被布置成混合。

44. 发明授权

US06756614B2 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产工艺及生产设备
公开(公告)号：US06756614B2
公开(公告)日：2004-06-29
申请号：US09791853
申请日：2001-02-26
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L31072
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： In an MIS field effect transistor having a gate electrode formed on a first semiconductor layer which is a polycrystalline silicon film on an insulating substrate through a gate insulating film, a channel region formed in the semiconductor layer and a source region and a drain region arranged on both sides of the channel region, a thin film semiconductor device has a main orientation of at least the channel region of {110} with respect to the surface of the gate insulating film. Further, a polycrystalline semiconductor film having a main orientation of the surface almost perpendicular to a direction for connecting the source and drain regions of {100} is preferably used in the channel of a semiconductor device. According to the present invention, a semiconductor device having a high-quality polycrystalline semiconductor film whose grain boundary, grain size and crystal orientation can be controlled and whose film roughness and crystal defects formed by crystallization have been reduced can be obtained on the insulating substrate.
摘要翻译：在具有通过栅极绝缘膜在绝缘基板上形成在多晶硅膜的第一半导体层上的栅电极的MIS场效应晶体管中，形成在半导体层中的沟道区和布置在该半导体层上的源极区和漏极区通道区域的两侧，薄膜半导体器件相对于栅极绝缘膜的表面至少具有{110}的沟道区域的主取向。此外，优选在半导体器件的沟道中使用具有与用于连接{100}的源极和漏极区域的方向几乎垂直的表面的主取向的多晶半导体膜。根据本发明，可以在绝缘基板上获得具有可以控制其晶界，晶粒尺寸和晶体取向并且通过结晶形成的膜粗糙度和晶体缺陷已经降低的高品质多晶半导体膜的半导体器件。

45. 发明授权

US08294869B2 Image display 有权
标题翻译：图像显示
公开(公告)号：US08294869B2
公开(公告)日：2012-10-23
申请号：US12509673
申请日：2009-07-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
IPC分类号： G02F1/1333
CPC分类号： G02F1/133305 , G02F1/13452
摘要： To provide an image display which is capable of preventing fracturing of a substrate which is attributable to a substrate expansion arising from heating or humidification during a manufacture process, impact in use, or distortion when curved display is conducted, a connection failure between a semiconductor chip and a wiring terminal which are mounted on the substrate, and crack occurring in the substrate in the vicinity of an area where the semiconductor chip is mounted, with no need to add members and with no limit of pulling the wiring around. An image display part is formed on one surface of a flexible substrate, and a groove with a depth not reaching a thickness of the substrate is continuously or intermittently defined in another surface of the substrate.
摘要翻译：为了提供能够防止在制造过程中由于加热或加湿引起的基板膨胀导致基板压裂的图像显示器，当进行弯曲显示时，使用中的冲击或失真，半导体芯片之间的连接故障以及安装在基板上的布线端子和在安装半导体芯片的区域附近的基板中发生的裂纹，而不需要添加构件，并且没有限制拉动布线。在柔性基板的一个表面上形成图像显示部分，并且在基板的另一个表面上连续或间断地限定具有未达到基板厚度的深度的凹槽。

46. 发明授权

US07939826B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07939826B2
公开(公告)日：2011-05-10
申请号：US12258738
申请日：2008-10-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。

47. 发明授权

US07442958B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07442958B2
公开(公告)日：2008-10-28
申请号：US11768588
申请日：2007-06-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/76
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

48. 发明授权

US07256423B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07256423B2
公开(公告)日：2007-08-14
申请号：US11186907
申请日：2005-07-22
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
摘要翻译：一种薄膜半导体器件，其包括绝缘衬底，形成在衬底上的半导体多晶体薄膜和具有薄膜作为沟道的晶体管。多晶体包括多个晶粒，晶粒之间的晶界是凹陷的。具有凹陷表面的晶界是通道内所有晶界的最主要的。利用该结构，多晶体可以是能够在150℃以下的温度下形成的低温多晶体，从而实现具有高载流子迁移率的低成本器件。

49. 发明授权

US07115454B2 Thin film semiconductor device, polycrystalline semiconductor thin film production and process and production apparatus 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产及工艺及生产设备
公开(公告)号：US07115454B2
公开(公告)日：2006-10-03
申请号：US10670356
申请日：2003-09-26
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L21/00
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process is provided for producing an image display device which includes a thin film semiconductor device. In accordance with the process, semiconductor crystal grains are grown in a transverse direction in a semiconductor film by modulating a continuous wave laser into a pulsed laser beam and then irradiating the pulsed laser beam on the semiconductor film.
摘要翻译：提供了一种制造包括薄膜半导体器件的图像显示装置的方法。根据该方法，通过将连续波激光调制成脉冲激光束，然后将脉冲激光束照射在半导体膜上，半导体晶粒在半导体膜中沿横向生长。

50. 发明授权

US06716726B2 Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06716726B2
公开(公告)日：2004-04-06
申请号：US10277140
申请日：2002-10-22
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L2120
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： The present invention relates to a thin film transistor, in a low-temperature poly-Si thin film becoming an elemental material of the thin film transistor, an object of the invention is to provide the thin film transistor suitable for realizing an image display device having a high performance and a large area at low cost by realizing a poly-crystalline thin film having a crystal structure restraining current scattering in a grain boundary, lessening surface roughness, and capable of realizing high mobility even to a positive hole current. The object described above is achieved by realizing a TFT with high mobility by restraining a current scattering factor in a grain boundary of crystal with an introduction of Ge into the poly-crystalline Si thin film and with a difference in ratios of Ge compositions between an interior grain of crystal and a grain boundary of crystal resulted from a phase separation involved in crystallization, and by restraining surface roughness using a difference in volumes in a crystal.
摘要翻译：薄膜晶体管本发明涉及一种成为薄膜晶体管的元素材料的低温多晶硅薄膜中的薄膜晶体管，其目的在于提供一种薄膜晶体管，其适用于实现具有通过实现具有抑制晶界中的电流散射的晶体结构的多晶薄膜，降低表面粗糙度，并且即使对于空穴电流也能实现高迁移率，因此具有高性能和大面积的低成本。目的描述通过在晶体的晶界中抑制电流散射因子，通过在多晶Si薄膜中引入Ge并且在晶体的内部晶粒之间的Ge组成的比率的差异来实现具有高迁移率的TFT，并且晶体的晶界由结晶涉及的相分离产生，并且通过使用差异来抑制表面粗糙度在一个水晶体积。

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