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    • 46. 发明授权
    • High purity cobalt, method of manufacturing thereof, and high purity cobalt targets
    • 高纯钴,其制造方法和高纯度钴靶
    • US07279024B2
    • 2007-10-09
    • US10803506
    • 2004-03-17
    • Masahito UchikoshiNorio YokoyamaTamas KekesiMinoru Isshiki
    • Masahito UchikoshiNorio YokoyamaTamas KekesiMinoru Isshiki
    • C22B23/00
    • C22B23/0423C22B3/42C22B23/0461Y02P10/234
    • High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride. And then, the aqueous solution of cobalt chloride is evaporated to dryness and heated to 623 K to 873 K in a hydrogen atmosphere to generate cobalt.
    • 提供了非常少量杂质如铜的高纯度钴,其制造方法和高纯度钴靶。 将含钴杂质如铜溶解在盐酸溶液中,氯化钴水溶液的盐酸浓度调节至0.1kmol / m 3至3kmol / m 3, SUP> 3 。 然后,将钴加入到氯化钴水溶液中,并将惰性气体搅拌注入溶液中,以将氯化钴水溶液中所含的二价铜离子转化为一价铜离子。 然后,将氯化钴水溶液加入填充有阴离子交换树脂的柱中。 尽管单价铜离子被吸收在阴离子交换树脂上,但是钴不会吸收在阴离子交换树脂上。 因此,可以从氯化钴水溶液中分离出铜。 然后,将氯化钴水溶液蒸发至干,并在氢气氛中加热至623K至873K,以产生钴。
    • 47. 发明申请
    • Curable Silicone Composition and Cured Product Thereof
    • 可固化硅酮组合物及其固化产品
    • US20070225437A1
    • 2007-09-27
    • US10578798
    • 2004-11-04
    • Yoshitsugu MoritaMinoru IsshikiHiroshi UekiAtsushi Togashi
    • Yoshitsugu MoritaMinoru IsshikiHiroshi UekiAtsushi Togashi
    • C08L83/06C09D183/06C09J183/06
    • C09J183/06C08L83/00C08L83/06
    • A curable silicone composition includes: (A) an organopolysiloxane represented by the siloxane unit formula (1) given below and having at least two univalent organic groups that contain epoxy groups and are free of aromatic rings: [R13SiO1/2]a [R22SiO2/2]b [R3SiO3/2]c (where R1, R2, and R3 are univalent organic groups, at least two of which are contain epoxy groups and are free of aromatic rings; more than 20 mole % of R3 are aryl groups; a+b+c & equals; 1; on average, “a” satisfies the following condition: 0≦a≦0.8; on average, “b” satisfies the following condition: 0≦b≦0.8; and, on average satisfies the following condition: 0.2≦c≦1.0); (B) a linear-chain organopolysiloxane having at least two univalent organic groups that contain phenolic hydroxyl groups; and (C) a curing accelerator.
    • 可固化的有机硅组合物包括:(A)由下式给出的硅氧烷单元式(1)表示的具有至少两个含有环氧基并且不含芳环的一价有机基团的有机聚硅氧烷:[R 1 3 SiO 2 1/2 2 2 2 > 2/2 3 R 1,R 2,R 3和R 3是一价有机基团,其中至少两个含有环氧基并且不含芳环; 大于20摩尔%的R 3是芳基; a + b + c等于1;平均而言,“a”满足以下条件:0 <= a <= 0.8;平均 ,“b”满足以下条件:0 <= b <= 0.8;平均满足下列条件:0.2 <= c <= 1.0); (B)具有至少两个含有酚羟基的一价有机基团的直链有机聚硅氧烷; 和(C)固化促进剂。
    • 49. 发明授权
    • Metal purification method and metal refinement method
    • 金属净化方法和金属细化方法
    • US06391081B1
    • 2002-05-21
    • US09533537
    • 2000-03-23
    • Masahito UchikoshiNorio YokoyamaMinoru IsshikiKouji Mimura
    • Masahito UchikoshiNorio YokoyamaMinoru IsshikiKouji Mimura
    • C22B905
    • C22B4/005C22B9/226C22B23/06
    • A metal purification method and a metal refinement method in which metals of high purity can be easily refined and recovered without increasing the size of the purification and refining devices or complicating the operation. To this end, metals containing impurities are molten in a plasma arc containing active hydrogen to remove the impurities. If the metals contain ceramics inclusions, the metals are molten in a plasma arc containing active hydrogen and the ceramics inclusions are caused to float over the molten metal by exploiting the difference of density between the molten metal and the ceramics inclusions. The floating ceramics inclusions are decomposed and removed. For application to refining, the metal oxides are molten in a plasma arc containing active hydrogen so as to be reduced to metals.
    • 金属净化方法和金属精制方法,其中可以容易地精炼和回收高纯度的金属,而不增加净化和精制装置的尺寸或使操作变得复杂。 为此,含有杂质的金属在含有活性氢的等离子弧中熔融以除去杂质。 如果金属含有陶瓷夹杂物,则金属在含有活性氢的等离子体电弧中熔融,并且通过利用熔融金属和陶瓷夹杂物之间的密度差,使陶瓷夹杂物漂浮在熔融金属上。 浮选的陶瓷夹杂物被分解和去除。 为了应用于精炼,金属氧化物在含有活性氢的等离子体电弧中熔化,从而还原成金属。