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41. 发明申请

US20120168786A1 Potted Optoelectronic Module Having a Plurality of Semiconductor Components and Method for Producing an Optoelectronic Module 有权
标题翻译：具有多个半导体元件的盆式光电模块和用于制造光电模块的方法
公开(公告)号：US20120168786A1
公开(公告)日：2012-07-05
申请号：US13393820
申请日：2010-08-25
申请人： Andreas Barth , Peter Brick , Michael Wittmann
发明人： Andreas Barth , Peter Brick , Michael Wittmann
IPC分类号： H01L33/50 , H01L33/52
CPC分类号： H01L33/54 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor component comprising: a main body (100) having a recess; (102), a first optoelectronic element (104) and a second optoelectronic element; (106) a surface structured element; (110) and a filling compound (112) embedding the first optoelectronic element (104) and the second optoelectronic element (106) in the recess, wherein the surface structured element configures a surface of the filling compound (112) such that at least two domed regions (114, 116, 118) of the surface are formed.
摘要翻译：一种光电子半导体部件，包括：主体（100），具有凹部; （102），第一光电元件（104）和第二光电元件; （106）表面结构元件; （110）和填充化合物（112），其将所述第一光电子元件（104）和所述第二光电元件（106）嵌入所述凹部中，其中所述表面结构化元件构成所述填充化合物（112）的表面，使得至少两个形成表面的圆顶区域（114,116,118）。

42. 发明申请

US20110297999A1 Optoelectronic Semiconductor Component 有权
标题翻译：光电半导体元件
公开(公告)号：US20110297999A1
公开(公告)日：2011-12-08
申请号：US13056811
申请日：2009-07-15
申请人： Michael Binder , Alexander Linkov , Thomas Zeiler , Peter Brick
发明人： Michael Binder , Alexander Linkov , Thomas Zeiler , Peter Brick
IPC分类号： H01L33/52 , H01L31/18 , H01L31/0203
CPC分类号： H01L33/486 , H01L33/44 , H01L33/54 , H01L2933/0033 , H01L2933/005 , H01L2933/0091
摘要： An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) comprises at least one side face (31) which extends at least in places at an angle β of
摘要翻译：提供了一种光电子半导体部件，其具有连接载体（2），布置在连接载体（2）的安装面（22）上的光电半导体芯片（1）和辐射透射体（3），，其包围所述半导体芯片（1），其中所述辐射透射体（3）包含硅树脂，所述辐射透射体（3）包括至少一个侧面（31），所述至少一个侧面（31）至少在角度＆bgr ; 与安装面（22）和侧面（3）的<90°是通过切割处理制造的。

43. 发明申请

US20110266567A1 Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component 有权
标题翻译：产生辐射发射元件和辐射发射元件的方法
公开(公告)号：US20110266567A1
公开(公告)日：2011-11-03
申请号：US12745686
申请日：2008-10-24
申请人： Peter Brick , Uwe Strauss
发明人： Peter Brick , Uwe Strauss
IPC分类号： H01L33/58
CPC分类号： H01S5/1082 , H01S5/0035 , H01S5/10 , H01S5/1017 , H01S5/204 , H01S5/3095 , H01S5/32 , H01S5/3215 , H01S5/4043 , H01S2301/18 , H01S2301/185 , H01S2301/206
摘要： A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.
摘要翻译：一种用于制造辐射发射部件（1）的方法，其中指定了在与部件的主发射轴垂直的方向上的近场（101,201）的场分布。根据近场的场分布，确定沿该方向的折射率分布（111,211,511）的折射率。确定组件的结构，使得组件将具有先前确定的折射率曲线。该组件根据先前确定的结构构造。还公开了一种辐射发射元件。

44. 发明申请

US20100296538A1 Optoelectronic Component 有权
标题翻译：光电元件
公开(公告)号：US20100296538A1
公开(公告)日：2010-11-25
申请号：US12679892
申请日：2008-08-29
申请人： Matthias Sabathil , Peter Brick , Christoph Eichler
发明人： Matthias Sabathil , Peter Brick , Christoph Eichler
IPC分类号： H01S5/343
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/4043
摘要： An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).
摘要翻译：规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。发射区域（4）和泵浦区域（3）彼此上下排列。在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。

45. 发明申请

US20100189153A1 Method of Producing a Radiation-Emitting Component and Radiation-Emitting Component 有权
标题翻译：产生辐射发射元件和辐射发射元件的方法
公开(公告)号：US20100189153A1
公开(公告)日：2010-07-29
申请号：US12670984
申请日：2008-08-18
申请人： Peter Brick
发明人： Peter Brick
IPC分类号： H01S5/10 , H01S5/00 , H01S5/20 , H01S5/22 , H01L21/20
CPC分类号： H01S5/4043 , H01S5/0035 , H01S5/1064 , H01S5/2004 , H01S5/22 , H01S5/3095 , H01S2301/18 , H01S2301/206
摘要： A method of producing a radiation-emitting component is provided. A far field radiation pattern is predetermined. From the predetermined radiation pattern a refractive index profile for the radiation-emitting component is determined in a direction extending perpendicularly to a main emission direction of the component. A structure is determined for the component, such that the component includes the previously determined refractive index profile. The component is configured according to the previously determined structure.
摘要翻译：提供一种制造辐射发射部件的方法。远场辐射图是预定的。根据预定的辐射图，在垂直于部件的主发射方向延伸的方向上确定用于辐射发射部件的折射率分布。确定组件的结构，使得该组件包括先前确定的折射率分布。该组件根据先前确定的结构进行配置。

46. 发明申请

US20080192784A1 Semiconductor laser with reduced heat loss 失效
标题翻译：半导体激光器具有减少的热损失
公开(公告)号：US20080192784A1
公开(公告)日：2008-08-14
申请号：US12080378
申请日：2008-04-01
申请人： Peter Brick
发明人： Peter Brick
IPC分类号： H01S5/024 , H01S5/10
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/02461 , H01S5/041 , H01S5/105 , H01S5/1078 , H01S5/141 , H01S5/18319 , H01S5/18352 , H01S5/34 , H01S5/343
摘要： Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation. The active layer includes a region provided for optical pumping by a pump radiation source. The optically pumped region of the active layer is surrounded by a region having, in a direction perpendicular to the main radiating direction, a periodic structure that forms a photonic crystal in which radiation having the emission wavelength is not capable of propagation.
摘要翻译：公开了一种半导体激光器。半导体激光器包括包含有源层并沿主辐射方向发射辐射的半导体芯片。有源层在垂直于主辐射方向的方向上构造，以通过自发发射的辐射来减少半导体芯片的加热。有源层包括用于通过泵浦辐射源进行光泵浦的区域。有源层的光泵浦区域被沿着与主辐射方向垂直的方向的区域包围，该区域形成具有发射波长的辐射不能传播的光子晶体的周期性结构。

47. 发明申请

US20080153189A1 Method for producing a radiation-emitting-and-receiving semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片的制造方法
公开(公告)号：US20080153189A1
公开(公告)日：2008-06-26
申请号：US12072365
申请日：2008-02-26
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173
摘要： A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.
摘要翻译：一种用于制造集成半导体部件的方法，包括用于发射辐射的第一半导体层结构和用于接收辐射的第二半导体层结构，其中首先提供衬底，并且包含辐射产生区的第一半导体层序列外延地沉积在基质。随后在第一半导体层序列上外延沉积包含辐射吸收区的第二半导体层序列。然后将第二半导体层序列图案化以便露出第一位置和第二位置。第一半导体层结构与第二半导体层结构电绝缘。最后，将第一接触层施加到衬底的自由表面，并且至少将第二接触层施加到第一和第二位置用于接触连接。

48. 发明申请

US20070160101A1 Laser diode apparatus, laser arrangement having at least one laser diode apparatus, and optically pumped laser 有权
标题翻译：激光二极管装置，具有至少一个激光二极管装置的激光装置和光泵浦激光器
公开(公告)号：US20070160101A1
公开(公告)日：2007-07-12
申请号：US11541131
申请日：2006-09-28
申请人： Harald Konig , Peter Brick , Jurgen Moosburger
发明人： Harald Konig , Peter Brick , Jurgen Moosburger
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/0224 , H01S5/02276 , H01S5/02461 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/183
摘要： A laser diode apparatus (2) having a plurality of active regions (4a . . . 4n) which are arranged side by side and are designed for radiation production when the laser diode apparatus is in operation. A lateral dimension (ba . . . bn) of the active regions is varied in the lateral direction, and/or the distance (Da . . . D1) between adjacent active regions is varied in the lateral direction. Furthermore, a laser arrangement (1) is specified, having a laser diode apparatus which is arranged on a mount (6) with the mount being matched to the laser diode apparatus. Furthermore, a laser which is optically pumped by means of the laser diode apparatus or the laser arrangement is specified.
摘要翻译：一种激光二极管装置（2），其具有并排布置的多个有源区域（4 ... 4 n），并且被设计用于当激光二极管装置运行时进行辐射生产。有源区域的横向尺寸（横向尺寸）在横向方向上变化，和/或距离（D a a / 相邻的活性区域之间的距离在横向方向上变化。此外，具有激光装置（1），其具有设置在安装件与激光二极管装置匹配的安装座（6）上的激光二极管装置。此外，指定了通过激光二极管装置或激光装置光学泵浦的激光器。

49. 发明申请

US20070041414A1 Semiconductor laser showing reduced sensitivity to disturbances 审中-公开
标题翻译：半导体激光器对干扰的灵敏度降低
公开(公告)号：US20070041414A1
公开(公告)日：2007-02-22
申请号：US10550994
申请日：2004-02-23
申请人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
发明人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
IPC分类号： H01S5/00
CPC分类号： H01S5/18377 , H01S5/2022 , H01S2301/02 , H01S2301/163
摘要： A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation (9) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation (9).
摘要翻译：半导体激光器在其激光谐振器中包含至少一个吸收层（8），所述吸收层减少了激光谐振器中的激光辐射（10）的透射率T res，以减少半导体激光器对由反馈到激光谐振器中的辐射（9）产生的干扰的灵敏度。这减少了由反馈辐射引起的输出功率的波动（9）。

50. 发明申请

US20050110026A1 Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片及其制造方法
公开(公告)号：US20050110026A1
公开(公告)日：2005-05-26
申请号：US10951525
申请日：2004-09-28
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L31/12 , H01L27/15 , H01L31/173
CPC分类号： H01L27/15 , H01L31/173
摘要： A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced apart from one another on a common substrate (3) and have at least one first contact layer (4). The first semiconductor layer construction (1) has an electromagnetic-radiation-generating region (5) arranged between p-conducting semiconductor layers (6) and n-conducting semiconductor layers (7) of the first semiconductor layer construction (1). A second contact layer (8) is at least partially arranged on that surface of the first semiconductor layer construction (1) which is remote from the substrate (3) and that of the second semiconductor layer construction (2). The second semiconductor layer construction (2) has an electromagnetic-radiation-absorbing region (9), the composition of the radiation-generating region (5) being different from that of the radiation-absorbing region (9).
摘要翻译：辐射发射和接收半导体部件至少具有用于发射辐射的第一半导体层结构（1）和用于接收辐射的第二半导体层结构（2），所述第二半导体层结构（2）以彼此间隔开的方式布置公共衬底（3）并且具有至少一个第一接触层（4）。第一半导体层结构（1）具有布置在第一半导体层结构（1）的p导电半导体层（6）和n导电半导体层（7）之间的电磁辐射产生区域（5）。第二接触层（8）至少部分地布置在远离基板（3）的第一半导体层结构（1）的表面和第二半导体层结构（2）的表面上。第二半导体层结构（2）具有电磁辐射吸收区域（9），辐射产生区域（5）的组成与辐射吸收区域（9）的组成不同。

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