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41. 发明授权

US07508958B2 IC card access control method for biometrics authentication, biometrics authentication method, and biometrics authentication device 有权
标题翻译：用于生物特征认证的IC卡访问控制方法，生物识别认证方法和生物特征认证装置
公开(公告)号：US07508958B2
公开(公告)日：2009-03-24
申请号：US11169900
申请日：2005-06-30
申请人： Kiyotaka Awatsu , Takahiro Kudoh , Masashi Sano , Masanori Ohkoshi
发明人： Kiyotaka Awatsu , Takahiro Kudoh , Masashi Sano , Masanori Ohkoshi
IPC分类号： G06K9/00 , G06K9/54 , G06K7/01 , G05B19/00
CPC分类号： G06F21/32 , G06F21/34 , G07F19/20
摘要： A biometrics authentication device uses biometrics information to perform individual authentication, and securely registers biometrics information for an authorized agent other than the principal. Within an IC card, registered biometrics information of a principal is verified against biometrics information detected by a detection unit, and when biometrics authentication of the principal is satisfactory, access is permitted to modify data for an authorized agent in the IC card, so that biometrics information for the authorized agent can be securely modified in a card in which is registered biometrics information for the principal. Similarly, illicit modification access of a card in which is registered biometrics information of the principal by a person impersonating an authorized agent can be prevented.
摘要翻译：生物识别认证设备使用生物特征信息来执行个体认证，并且为委托人之外的授权代理安全地注册生物特征信息。在IC卡内，根据由检测单元检测到的生物特征信息验证委托人的登记生物识别信息，并且当委托人的生物特征认证令人满意时，允许访问修改IC卡中授权代理的数据，使得生物识别授权代理人的信息可以在其中为委托人的注册生物识别信息的卡中被安全地修改。类似地，可以防止假冒授权代理人的身份登记的委托书的生物特征信息的卡的非法修改访问。

42. 发明授权

US07274540B2 Magnetoresistive head having an MR element between a pair of shields and including first and second underlayers 有权
标题翻译：磁阻头在一对屏蔽之间具有MR元件并且包括第一和第二底层
公开(公告)号：US07274540B2
公开(公告)日：2007-09-25
申请号：US10967359
申请日：2004-10-19
申请人： Masashi Sano
发明人： Masashi Sano
IPC分类号： G11B5/39
CPC分类号： G11B5/3912
摘要： A magnetoresistive device includes a first shield layer and a second shield layer disposed at a specific distance from each other, an MR element disposed between the first and second shield layer, and an underlying layer disposed between the first shield layer and the MR element. The underlying layer, the MR element and the second shield layer are stacked on the first shield layer. The underlying layer includes a first layer having a bottom surface that is in contact with the first shield layer, and a second layer having a bottom surface that is in contact with a top surface of the first layer and a top surface that is adjacent to the MR element with a conductive layer disposed in between. The first layer is made of a material including at least one of Ta, Ti, W, HF and Y. The second layer is an alloy including Ni and Cr.
摘要翻译：磁阻装置包括设置在第一和第二屏蔽层之间的特定距离处的第一屏蔽层和第二屏蔽层，以及设置在第一屏蔽层和MR元件之间的下层。下层，MR元件和第二屏蔽层堆叠在第一屏蔽层上。下层包括具有与第一屏蔽层接触的底表面的第一层和具有与第一层的顶表面接触的底表面的第二层和与第一层相邻的顶表面 MR元件，其中设置有导电层。第一层由包括Ta，Ti，W，HF和Y中的至少一种的材料制成。第二层是包括Ni和Cr的合金。

43. 发明授权

US07262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层反射纳米氧化层。由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。

44. 发明授权

US07145756B2 Magnetic transducer, thin film magnetic head and method of manufacturing the same 失效
标题翻译：磁性传感器，薄膜磁头及其制造方法
公开(公告)号：US07145756B2
公开(公告)日：2006-12-05
申请号：US10645901
申请日：2003-08-22
申请人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
发明人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head.A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.
摘要翻译：提供能够增加电阻变化并获得适当矫顽力的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。叠层，自旋阀膜具有堆叠结构，其包括依次层叠在下层上的第一软磁层，第二软磁层，非磁性金属层，铁磁层，反铁磁层和保护层。电阻根据铁磁层的磁化取向与第一和第二软磁层的磁化方向之间的相对角度而改变。在第一软磁性层中形成具有磁性的软磁性中间层和比第一软磁性层的电阻高的电阻。当电流流过堆叠时，电子被软磁中间层的表面反射，因此电子的路径变窄。因此，电阻变化率增加。

45. 发明授权

US06995358B2 Reflective sensor, filter for reflective sensor, and method of detecting object using the same 有权
标题翻译：反射传感器，反射传感器用过滤器，及使用其的物体检测方法
公开(公告)号：US06995358B2
公开(公告)日：2006-02-07
申请号：US10608017
申请日：2003-06-30
申请人： Masashi Sano
发明人： Masashi Sano
IPC分类号： H01J40/14
CPC分类号： H04N1/00687 , G01S7/4813 , G01S7/497 , G01S17/026 , G01S2007/4975 , G01S2007/4977 , H04N1/00681 , H04N1/00734 , H04N1/0075
摘要： A reflective sensor detects the presence of a subject at a detecting position. The sensor has a sensor portion and a filter. The sensor portion includes a light-emitting element that emits light at the detecting position and a light-receiving element that receives light reflected from the subject, and generates an electrical signal corresponding to a quantity of received light. The filter is between the sensor portion and the detecting position, is made of a material that transmits light heading to the detecting position from the light-emitting element and light heading to the light-receiving element from the subject, and prevents intrusion of dust. A filter surface facing the sensor portion is tapered and has an inclined plane opposing the light-emitting element, another inclined plane opposing the light-receiving element, and a ridge portion where the inclined planes meet. The ridge portion extends between the light-emitting element and the light-receiving element.
摘要翻译：反射传感器在检测位置检测被摄体的存在。传感器具有传感器部分和过滤器。传感器部分包括在检测位置发射光的发光元件和接收从被摄体反射的光的光接收元件，并产生对应于接收光量的电信号。过滤器位于传感器部分和检测位置之间，由从发光元件透射到检测位置的光和从被摄体向光接收元件前进的光的材料制成，并防止灰尘入侵。面对传感器部分的过滤器表面是锥形的，并且具有与发光元件相对的倾斜平面，与光接收元件相对的另一倾斜平面和倾斜平面相交的脊部。脊部在发光元件和光接收元件之间延伸。

46. 发明授权

US06909583B2 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

47. 发明授权

US06639763B1 Magnetic transducer and thin film magnetic head 失效
标题翻译：磁性传感器和薄膜磁头
公开(公告)号：US06639763B1
公开(公告)日：2003-10-28
申请号：US09663387
申请日：2000-09-15
申请人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
发明人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head having resistance properties adaptable to ultra-high-density recording. An MR element, the magnetic transducer, has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. The stack has a first region and a second region into which the stack is divided in the direction of stacking thereof. The first and second regions of the stack differ from each other in the material or composition of the magnetic layers. The MR element has the above-described structure, thereby being capable of obtaining high resistance and a high rate of resistance change.
摘要翻译：本发明的目的是提供一种具有适用于超高密度记录的电阻特性的磁换能器和薄膜磁头。 MR元件，磁换能器，具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。堆叠具有第一区域和第二区域，堆叠体沿其堆叠方向被分割成第一区域和第二区域。堆叠的第一和第二区域在磁性层的材料或组成上彼此不同。 MR元件具有上述结构，从而能够获得高电阻和高电阻变化率。

48. 发明授权

US06636393B1 Magnetic transducer and thin-film magnetic head having a stacked structure including an interlayer having a high electrical resistance 有权
标题翻译：磁性换能器和具有包括具有高电阻的中间层的堆叠结构的薄膜磁头
公开(公告)号：US06636393B1
公开(公告)日：2003-10-21
申请号：US09425200
申请日：1999-10-22
申请人： Satoru Araki , Yoshihiro Tsuchiya , Masashi Sano
发明人： Satoru Araki , Yoshihiro Tsuchiya , Masashi Sano
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A magnetic transducer and a thin film magnetic head capable of increasing a resistance change are provided. A spin valve film has a stacked structure comprising a soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the soft magnetic layer. The ferromagnetic layer includes an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer. The inner ferromagnetic layer and the outer ferromagnetic layer are magnetically coupled to each other sandwiching the coupling layer, whereby the magnetizations oriented in opposite directions are generated. A ferromagnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the inner ferromagnetic layer is included in the inner ferromagnetic layer closest to the nonmagnetic layer in the ferromagnetic layer. When a current flows through the stack, the ferromagnetic interlayer reflects at least some electrons and limits a route for the electrons and thus a rate of resistance change is increased.
摘要翻译：提供了能够增加电阻变化的磁换能器和薄膜磁头。自旋阀膜具有堆叠结构，其包括顺序层叠在下层上的软磁性层，非磁性层，铁磁层，反铁磁层和保护层。电阻根据铁磁层的磁化方向与软磁性层的磁化方向之间的相对角度而变化。铁磁层包括内铁磁层，耦合层和外铁磁层。内铁磁层和外铁磁层彼此磁耦合夹住耦合层，由此产生沿相反方向取向的磁化。具有磁性的铁磁中间层和比内部铁磁层的电阻高的电阻包含在最接近铁磁层中的非磁性层的内部铁磁层中。当电流流过堆叠时，铁磁层将反射至少一些电子并限制电子的路线，从而增加电阻变化率。

49. 发明授权

US06567247B1 Magnetoresistance effect type head 失效
标题翻译：磁阻效应型头
公开(公告)号：US06567247B1
公开(公告)日：2003-05-20
申请号：US09515327
申请日：2000-02-29
申请人： Satoru Araki , Yoshihiro Tsuchiya , Masashi Sano
发明人： Satoru Araki , Yoshihiro Tsuchiya , Masashi Sano
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932
摘要： An improved output magnetoresistance effect type head having a spin valve type multilayered film which includes a non-magnetic metal layer, a ferromagnetic layer, a soft magnetic layer, and a pinning layer, where the soft magnetic bias assist layers formed on the soft magnetic layer changes its magnetization direction in an external magnetic field. Bias applying layers formed on these layers for applying a bias in a longitudinal direction of the soft magnetic layer are made of antiferromagnetic RuxMyMnz, where M is Rh, Pt, Pd, Au, Ag, Re, Ir and Cr, 1≦x≦30, 1≦y≦30, 69≦z≦90 and 10≦x+y≦31 and the unit of x, y, z is atomic %.
摘要翻译：一种具有自旋阀型多层膜的改进的输出磁阻效应型头，其包括非磁性金属层，铁磁层，软磁层和钉扎层，其中形成在软磁层上的软磁偏置辅助层在外部磁场中改变其磁化方向。形成在这些层上的偏压施加层用于在软磁性层的纵向施加偏压，由反铁磁RuxMyMnz制成，其中M是Rh，Pt，Pd，Au，Ag，Re，Ir和Cr，1 <= x < = 30，1 <= y <= 30，69 <= z <= 90，10 <= x + y <= 31，x，y，z的单位为原子％。

50. 发明授权

US6090498A Magnetoresistance effect element and magnetoresistance device 失效
标题翻译：磁阻效应元件和磁阻器件
公开(公告)号：US6090498A
公开(公告)日：2000-07-18
申请号：US950798
申请日：1997-10-15
申请人： Eiichi Omata , Satoru Araki , Masashi Sano , Yasuyuki Yamamoto
发明人： Eiichi Omata , Satoru Araki , Masashi Sano , Yasuyuki Yamamoto
IPC分类号： G11B5/39 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , H01L43/08 , G11B2005/3996 , G11B5/3903 , Y10S428/90 , Y10T428/1121
摘要： In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can be provided the magnetoresistance effect element having a magnetic multilayered film which is excellent in corrosion resistance, thermal stability and magnetic field sensitivity and has a large MR change ratio, as well as a magnetoresistance device, such as a magnetoresistance effect type head or the like, using such a magnetoresistance effect element.
摘要翻译：在磁阻效应元件中，钉扎层（反铁磁层）具有Ru-Mn或Ru-M-Mn的组成，其中M表示选自Rh，Pt，Pd，Au，Ag和Re中的至少一种，杂质浓度的钉扎层被调节。因此，可以提供具有耐腐蚀性，热稳定性和磁场灵敏度优异，MR变化率大的磁性多层膜的磁电阻效应元件，以及诸如磁阻效应型磁头的磁阻效应元件使用这种磁阻效应元件。

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