专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6090498A Magnetoresistance effect element and magnetoresistance device 失效
标题翻译：磁阻效应元件和磁阻器件
公开(公告)号：US6090498A
公开(公告)日：2000-07-18
申请号：US950798
申请日：1997-10-15
申请人： Eiichi Omata , Satoru Araki , Masashi Sano , Yasuyuki Yamamoto
发明人： Eiichi Omata , Satoru Araki , Masashi Sano , Yasuyuki Yamamoto
IPC分类号： G11B5/39 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , H01L43/08 , G11B2005/3996 , G11B5/3903 , Y10S428/90 , Y10T428/1121
摘要： In a magnetoresistance effect element, a pinning layer (antiferromagnetic layer) has a composition of Ru--Mn or Ru--M--Mn where M represents at least one selected from Rh, Pt, Pd, Au, Ag, and Re, and impurity concentrations of the pinning layer are regulated. Accordingly, there can be provided the magnetoresistance effect element having a magnetic multilayered film which is excellent in corrosion resistance, thermal stability and magnetic field sensitivity and has a large MR change ratio, as well as a magnetoresistance device, such as a magnetoresistance effect type head or the like, using such a magnetoresistance effect element.
摘要翻译：在磁阻效应元件中，钉扎层（反铁磁层）具有Ru-Mn或Ru-M-Mn的组成，其中M表示选自Rh，Pt，Pd，Au，Ag和Re中的至少一种，杂质浓度的钉扎层被调节。因此，可以提供具有耐腐蚀性，热稳定性和磁场灵敏度优异，MR变化率大的磁性多层膜的磁电阻效应元件，以及诸如磁阻效应型磁头的磁阻效应元件使用这种磁阻效应元件。

2. 发明授权

US06920022B1 Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head 有权
标题翻译：磁换能器，薄膜磁头，磁换能器的制造方法及制造薄膜磁头的方法
公开(公告)号：US06920022B1
公开(公告)日：2005-07-19
申请号：US09769760
申请日：2001-01-26
申请人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano , Takumi Uesugi
发明人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano , Takumi Uesugi
IPC分类号： G11B5/31 , G11B5/127 , G11B5/21 , G11B5/39 , H01F10/00 , H01F10/08 , H01F10/30 , H01F10/32 , H01F41/18 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , G11B5/1276 , G11B5/21 , H01F10/3268
摘要： Provided are a magnetic transducer having good thermal stability, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack of an MR element has a stacked structure comprising an underlayer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a capping layer, which are stacked in this order on the underlayer. The ferromagnetic layer is divided into a bottom layer and a top layer in the direction of stack. A ferromagnetic interlayer having magnetism and having higher electrical resistance than the electrical resistance of the ferromagnetic layer is formed between the bottom layer and the top layer. The ferromagnetic interlayer magnetically integrates the bottom layer with the top layer and limits a path for electrons moving through the stack, thereby improving the rate of resistance change. Furthermore, the ferromagnetic interlayer contains, as an additive, at least one element in a group consisting of Mn, Cr, Ni, Cu, Rh, Ir and Pt and thus prevents heat deterioration in the stack.
摘要翻译：提供具有良好热稳定性的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。 MR元件的堆叠具有堆叠结构，其包括下层，第一软磁层，第二软磁层，非磁性层，铁磁层，反铁磁层和覆盖层，底层铁磁层沿堆叠方向分为底层和顶层。在底层和顶层之间形成具有磁性并且具有比铁磁层的电阻更高的电阻的铁磁中间层。铁磁层将磁极层与顶层磁集成，限制电子移动通过堆叠的路径，从而提高电阻变化率。此外，铁磁性中间层含有由Mn，Cr，Ni，Cu，Rh，Ir和Pt组成的组中的至少一种元素作为添加剂，从而防止堆叠中的热劣化。

3. 发明授权

US06646834B2 Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head 有权
公开(公告)号：US06646834B2
公开(公告)日：2003-11-11
申请号：US09904842
申请日：2001-07-16
申请人： Masashi Sano , Satoru Araki , Yoshihiro Tsuchiya , Takumi Uesugi
发明人： Masashi Sano , Satoru Araki , Yoshihiro Tsuchiya , Takumi Uesugi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/324 , H01F10/3268 , Y10T29/49044
摘要： Provided are a magnetic transducer and a thin film magnetic head having good thermal stability and capable of obtaining a high exchange coupling magnetic field, a method of manufacturing a magnetic transducer and a method of a manufacturing a thin film magnetic head. An MR element has a stack having a stacked structure comprising an underlayer, a crystal-growth inhibitor layer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a cap layer, which are stacked in sequence. The ferromagnetic layer has an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer, which are stacked in this order on the nonmagnetic layer. The crystal-growth inhibitor layer inhibits crystal growth of the layers formed on the crystal-growth inhibitor layer, thereby limiting an average in-surface particle diameter of the inner ferromagnetic layer to within the range of from 3 nm to 8 nm inclusive, so that an interface between the coupling layer and the inner ferromagnetic layer becomes flattened.

4. 发明授权

US06391431B1 Magnetoresistance effect film and magnetoresistance effect type head 失效
标题翻译：磁阻效应膜和磁阻效应型头
公开(公告)号：US06391431B1
公开(公告)日：2002-05-21
申请号：US09325394
申请日：1999-06-04
申请人： Masashi Sano , Yoshihiro Tsuchiya , Satoru Araki , Haruyuki Morita
发明人： Masashi Sano , Yoshihiro Tsuchiya , Satoru Araki , Haruyuki Morita
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/123 , H01F10/3268 , Y10T428/1143 , Y10T428/1157 , Y10T428/12861 , Y10T428/12944 , Y10T428/24975
摘要： A spin valve type magnetoresistance effect film comprises a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, and an antiferromagnetization promote layer formed on a surface of the antiferromagnetic layer remote from the other surface thereof abutting the ferromagnetic layer, wherein the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure the which requires a heat treatment for generating exchange coupling relative to the ferromagnetic layer, and the antiferromagnetic layer after the heat treatment has a state wherein (110) crystal surfaces are oriented on a film surface of the antiferromagnetic layer.
摘要翻译：自旋阀型磁阻效应膜包括：包含非磁性金属层的多层膜，在非磁性金属层的一个表面上形成的铁磁层，形成在非磁性金属层的另一个表面上的软磁性层形成在铁磁层的远离其另一表面的表面上的反铁磁性层，其与非磁性金属层邻接以引导铁磁层的磁化方向，以及形成在铁磁层的表面上的反铁磁化促进层反铁磁层远离其另一表面邻接铁磁层，其中反铁磁层由含Mn的化合物制成并具有CuAu-I型规则晶体结构，其需要进行热处理以产生相对于铁磁层的交换耦合，热处理后的反铁磁层具有（110）晶面的状态在反铁磁层的膜表面上取向。

5. 发明授权

US06195239B1 Magnetoresistance effect film and magnetoresistance effect type head 有权
标题翻译：磁阻效应膜和磁阻效应型头
公开(公告)号：US06195239B1
公开(公告)日：2001-02-27
申请号：US09260727
申请日：1999-03-02
申请人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
发明人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
IPC分类号： G11B533
CPC分类号： G11B5/3967
摘要： In a spin valve type magnetoresistance effect film, an antiferromagnetic layer is made of MxMn100−x wherein M represents at least one selected from Ru, Rh, Re, Pt, Pd, Au, Ag, Fe, Ni, Ir and Cr, and 15≦x≦58 (unit of x: atomic %), and a protective layer formed thereon is made of at least one selected from Rh, Ru, Zr and Ti. With this arrangement, a magnetoresistance effect film highly excellent in thermal stability and small in deterioration of the MR ratio, as well as a magnetoresistance effect type head having such a magnetoresistance effect film can be obtained.
摘要翻译：在自旋阀型磁阻效应膜中，反铁磁层由MxMn100-x制成，其中M表示选自Ru，Rh，Re，Pt，Pd，Au，Ag，Fe，Ni，Ir和Cr中的至少一种， <= x <= 58（x：原子％），其上形成的保护层由选自Rh，Ru，Zr和Ti中的至少一种制成。通过这种布置，可以获得热稳定性优异且MR比率劣化小的磁阻效应膜以及具有这种磁阻效应膜的磁阻效应型头。

6. 发明授权

US06661623B1 Magnetic transducer with interlayer thin-film magnetic head and method of manufacturing thereof 有权
标题翻译：具有层间薄膜磁头的磁性换能器及其制造方法
公开(公告)号：US06661623B1
公开(公告)日：2003-12-09
申请号：US09425967
申请日：1999-10-25
申请人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
发明人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.
摘要翻译：提供能够增加电阻变化并获得适当矫顽力的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。叠层，自旋阀膜具有堆叠结构，其包括依次堆叠在下层上的第一软磁层，第二软磁层，非磁性金属层，铁磁层，反铁磁层和保护层。电阻根据铁磁层的磁化取向与第一和第二软磁层的磁化方向之间的相对角度而改变。在第一软磁性层中形成具有磁性的软磁性中间层和比第一软磁性层的电阻高的电阻。当电流流过堆叠时，电子被软磁中间层的表面反射，因此电子的路径变窄。因此，电阻变化率增加。

7. 发明授权

US5958611A Magnetic multilayered film, magnetoresistance effect element and magnetoresistance device 失效
标题翻译：磁性多层膜，磁阻效应元件和磁阻器件
公开(公告)号：US5958611A
公开(公告)日：1999-09-28
申请号：US873739
申请日：1997-06-12
申请人： Manabu Ohta , Kiyoshi Noguchi , Masashi Sano , Satoru Araki , Taro Oike
发明人： Manabu Ohta , Kiyoshi Noguchi , Masashi Sano , Satoru Araki , Taro Oike
IPC分类号： G11B5/31 , G11B5/39 , H01F10/08 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3268 , H01L43/10 , G11B2005/3996 , G11B5/3163 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/24355
摘要： According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which are stacked on a substrate in order. A surface roughness Ra of the oxide antiferromagnetic layer at the side of the pinned ferromagnetic layer is set to no greater than 0.6 nm, and a crystal grain size D of the oxide antiferromagnetic layer is set to a value in the range of 10 to 40 nm. Thus, the magnetic multilayered film has the large exchange-coupling magnetic field and MR ratio and MR sensitivity. The magnetic multilayered film may be applied to a magnetoresistance effect element which may also applied to a magnetoresistance device, such as, a magnetoresistance effect type head. The magnetoresistance effect element having such a magnetic multilayered film is capable of obtaining high outputs. The magnetoresistance effect type head having such a magnetoresistance effect element which is excellent in current efficiency and capable of detecting signals magnetically recorded in high density, particularly in ultrahigh density exceeding 3 Gbit/inch.sup.2 and further obtaining large outputs.
摘要翻译：根据本发明，磁性多层膜包括氧化物反铁磁性层，由氧化物反铁磁层固定的钉扎铁磁性层，依次层叠在基板上的非磁性金属层和自由铁磁性层。在被钉扎的铁磁层一侧的氧化物反铁磁性层的表面粗糙度Ra被设定为不大于0.6nm，并且氧化物反铁磁性层的晶粒尺寸D设定在10至40nm的范围内的值。因此，磁性多层膜具有大的交换耦合磁场和MR比和MR灵敏度。可以将磁性多层膜施加到也可以施加到诸如磁阻效应型头的磁阻器件的磁阻效应元件。具有这种磁性多层膜的磁阻效应元件能够获得高输出。具有这样的磁阻效应元件的磁电阻效应型头具有优异的电流效率，能够检测高密度地磁记录的信号，特别是超过3Gbit / inch2的超高密度，并进一步获得大的输出。

8. 发明授权

US07145756B2 Magnetic transducer, thin film magnetic head and method of manufacturing the same 失效
标题翻译：磁性传感器，薄膜磁头及其制造方法
公开(公告)号：US07145756B2
公开(公告)日：2006-12-05
申请号：US10645901
申请日：2003-08-22
申请人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
发明人： Yoshihiro Tsuchiya , Satoru Araki , Masashi Sano
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head.A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.
摘要翻译：提供能够增加电阻变化并获得适当矫顽力的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。叠层，自旋阀膜具有堆叠结构，其包括依次层叠在下层上的第一软磁层，第二软磁层，非磁性金属层，铁磁层，反铁磁层和保护层。电阻根据铁磁层的磁化取向与第一和第二软磁层的磁化方向之间的相对角度而改变。在第一软磁性层中形成具有磁性的软磁性中间层和比第一软磁性层的电阻高的电阻。当电流流过堆叠时，电子被软磁中间层的表面反射，因此电子的路径变窄。因此，电阻变化率增加。

9. 发明授权

US06639763B1 Magnetic transducer and thin film magnetic head 失效
标题翻译：磁性传感器和薄膜磁头
公开(公告)号：US06639763B1
公开(公告)日：2003-10-28
申请号：US09663387
申请日：2000-09-15
申请人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
发明人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head having resistance properties adaptable to ultra-high-density recording. An MR element, the magnetic transducer, has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. The stack has a first region and a second region into which the stack is divided in the direction of stacking thereof. The first and second regions of the stack differ from each other in the material or composition of the magnetic layers. The MR element has the above-described structure, thereby being capable of obtaining high resistance and a high rate of resistance change.
摘要翻译：本发明的目的是提供一种具有适用于超高密度记录的电阻特性的磁换能器和薄膜磁头。 MR元件，磁换能器，具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。堆叠具有第一区域和第二区域，堆叠体沿其堆叠方向被分割成第一区域和第二区域。堆叠的第一和第二区域在磁性层的材料或组成上彼此不同。 MR元件具有上述结构，从而能够获得高电阻和高电阻变化率。

10. 发明授权

US06636393B1 Magnetic transducer and thin-film magnetic head having a stacked structure including an interlayer having a high electrical resistance 有权
标题翻译：磁性换能器和具有包括具有高电阻的中间层的堆叠结构的薄膜磁头
公开(公告)号：US06636393B1
公开(公告)日：2003-10-21
申请号：US09425200
申请日：1999-10-22
申请人： Satoru Araki , Yoshihiro Tsuchiya , Masashi Sano
发明人： Satoru Araki , Yoshihiro Tsuchiya , Masashi Sano
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A magnetic transducer and a thin film magnetic head capable of increasing a resistance change are provided. A spin valve film has a stacked structure comprising a soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the soft magnetic layer. The ferromagnetic layer includes an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer. The inner ferromagnetic layer and the outer ferromagnetic layer are magnetically coupled to each other sandwiching the coupling layer, whereby the magnetizations oriented in opposite directions are generated. A ferromagnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the inner ferromagnetic layer is included in the inner ferromagnetic layer closest to the nonmagnetic layer in the ferromagnetic layer. When a current flows through the stack, the ferromagnetic interlayer reflects at least some electrons and limits a route for the electrons and thus a rate of resistance change is increased.
摘要翻译：提供了能够增加电阻变化的磁换能器和薄膜磁头。自旋阀膜具有堆叠结构，其包括顺序层叠在下层上的软磁性层，非磁性层，铁磁层，反铁磁层和保护层。电阻根据铁磁层的磁化方向与软磁性层的磁化方向之间的相对角度而变化。铁磁层包括内铁磁层，耦合层和外铁磁层。内铁磁层和外铁磁层彼此磁耦合夹住耦合层，由此产生沿相反方向取向的磁化。具有磁性的铁磁中间层和比内部铁磁层的电阻高的电阻包含在最接近铁磁层中的非磁性层的内部铁磁层中。当电流流过堆叠时，铁磁层将反射至少一些电子并限制电子的路线，从而增加电阻变化率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式