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41. 发明授权

US06468875B2 Fabrication method of capacitor for integrated circuit 失效
标题翻译：集成电路电容器的制作方法
公开(公告)号：US06468875B2
公开(公告)日：2002-10-22
申请号：US09768170
申请日：2001-01-24
申请人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L2120
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

42. 发明授权

US5929475A Capacitor for integrated circuit and its fabrication method 失效
标题翻译：集成电路电容及其制造方法
公开(公告)号：US5929475A
公开(公告)日：1999-07-27
申请号：US573134
申请日：1995-12-15
申请人： Yasuhiro Uemoto , Eigi Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eigi Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L21/02 , H01L21/314 , H01L27/115 , H01L29/76 , H01L27/108 , H01L31/062
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

43. 发明授权

US5645976A Capacitor apparatus and method of manufacture of same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US5645976A
公开(公告)日：1997-07-08
申请号：US286801
申请日：1994-08-04
申请人： Masamichi Azuma
发明人： Masamichi Azuma
IPC分类号： G03F7/09 , H01L21/02 , G03F7/00
CPC分类号： H01L28/55 , G03F7/094 , H01L28/60 , H01L28/75
摘要： A method for fabricating a semiconductor capacitor having superior sidewall linearity and high capacitance in a small area wherein a titanate or tantalum barrier metal platform is deposited on the insulation layer of the semi conductor substrate. A capacitor structure comprising a first electrode layer of platinum or palladium, a dielectric layer preferably of a ferroelectric having a perovskite structure, and a second metal electrode layer is then constructed by sequential deposition of said layers. The subsequently deposited electrode metal of platinum or palladium will adhere to said barrier metal but delaminate from said insulation layer during high temperature cycling, yielding a high capacitance, small surface area structure.
摘要翻译：一种制造半导体电容器的方法，其在小面积上具有优异的侧壁线性度和高电容性，其中在半导体衬底的绝缘层上沉积钛酸盐或钽阻挡金属平台。然后通过顺序沉积所述层来构造包括铂或钯的第一电极层，优选具有钙钛矿结构的铁电体的电介质层和第二金属电极层的电容器结构。随后沉积的铂或钯的电极金属将粘附到所述阻挡金属上，但在高温循环期间从所述绝缘层分层，产生高电容，小的表面积结构。

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