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    • 41. 发明授权
    • Polycrystalline conducting polymers and precursors thereof having adjustable morphology and properties
    • 具有可调节形态和性质的多晶导电聚合物及其前体
    • US06210606B1
    • 2001-04-03
    • US09268527
    • 1999-03-12
    • Marie AngelopoulosYun-Hsin LiaoRavi F. Saraf
    • Marie AngelopoulosYun-Hsin LiaoRavi F. Saraf
    • H01B112
    • C08G61/12H01B1/128Y10T428/249958
    • Polycrystalline materials containing crystallites of precursors to electrically conductive polymers and electrically conductive polymers are described which have an adjustable high degree of crystallinity. The intersticial regions between the crystallites contains amorphous material containing precursors to electrically conductive polymers and/or electrically conductive polymers. The degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. This is preferable achieved by including additives, such as plasticizers and diluents, to the solution from which the polycrystalline material is formed. The morphology of the polycrystalline material is adjustable to modify the properties of the material such as the degree of crystallinity, crystal grain size, glass transition temperature, thermal coefficient of expansion and degree of electrical conductivity. High levels of electrical conductivity are achieved in the electrically conductive polycrystalline materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity.
    • 描述了具有可调高结晶度的导电聚合物和导电聚合物的前体微晶的多晶材料。 微晶之间的区域包含含有导电聚合物和/或导电聚合物的前体的无定形材料。 通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现结晶度。 优选通过将诸如增塑剂和稀释剂的添加剂添加到形成多晶材料的溶液中来实现。 可以调节多晶材料的形态,以改变材料的性质,例如结晶度,晶粒尺寸,玻璃化转变温度,热膨胀系数和电导率。 在导电多晶材料中实现高水平的导电性而不使材料拉伸取向。 与具有各向同性电导率的拉伸取向膜相比,增强的导电性是各向同性的。
    • 43. 发明授权
    • Structure and manufacture of X-ray mask pellicle with washer-shaped member
    • 具有垫圈构件的X射线掩模防护薄膜的结构和制造
    • US06180292B2
    • 2001-01-30
    • US09335536
    • 1999-06-18
    • Raul Edmundo AcostaMarie AngelopoulosSteven Allen Cordes
    • Raul Edmundo AcostaMarie AngelopoulosSteven Allen Cordes
    • G03F900
    • G03F1/22G03F1/62G03F1/64Y10S430/167
    • A precise thickness bulk etchable wafer material, that is responsive to protection with an oxide that inhibits insertion of an etch responsiveness altering material, is assembled with a membrane material that is susceptible to deposition processes. A bulk etch then removes most of the wafer. The arrangement permits the strength and rigidity of the bulk spacer to serve to permit the finely controllable deposition processes for ultra thin and wider ranges of membrane materials, the selective protection for spacer shaping and finally, the removal by the low stress process of etching, of the unused bulk spacer material. An oxide layer is patterned on a bulk spacer material wafer that has a thickness of the gap between an X-ray mask and the to be patterned oxide. The oxide on the bulk spacer material prevents conversion, through the exposed surface of the bulk spacer material wafer, of a portion of the wafer that is to serve as the spacer to a different etch responsiveness from that of the bulk spacer material. The exposed bulk spacer material wafer is converted to a depth that will serve as the spacer and to protect the edges. The oxide is then removed. The membrane is deposited over the full surface of the bulk spacer material. The bulk wafer is removed down to the converted portion using the imparted different etch responsivness.
    • 使用易于沉积工艺的膜材料组装精确厚度的可块状可蚀刻晶片材料,该晶片材料响应于防止蚀刻反应性改变材料插入的氧化物的保护。 体蚀刻然后去除大部分晶片。 该布置允许散装隔板的强度和刚度用于允许对薄膜材料的超薄和更宽范围的精细可控的沉积工艺,用于间隔件成形的选择性保护以及最终通过蚀刻的低应力过程的去除 未使用的散装隔板材料。 将氧化物层图案化在具有X射线掩模和待图案化氧化物之间的间隙厚度的块状间隔物材料晶片上。 块状隔离物材料上的氧化物防止了通过体隔片材料晶片的暴露表面将用作间隔物的晶片的一部分与块状间隔物材料的不同的蚀刻响应性的转换。 将暴露的块状间隔材料晶片转换成将用作间隔物并保护边缘的深度。 然后除去氧化物。 膜沉积在整块隔板材料的整个表面上。 使用赋予的不同蚀刻响应将体晶片除去到转化部分。