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41. 发明授权

US06316796B1 Single crystal silicon sensor with high aspect ratio and curvilinear structures 失效
标题翻译：具有高纵横比和曲线结构的单晶硅传感器及相关方法
公开(公告)号：US06316796B1
公开(公告)日：2001-11-13
申请号：US08652867
申请日：1996-05-23
申请人： Kurt E. Petersen , Nadim Maluf , Wendell McCulley , John Logan , Erno Klaasen , Jan Mark Noworolski
发明人： Kurt E. Petersen , Nadim Maluf , Wendell McCulley , John Logan , Erno Klaasen , Jan Mark Noworolski
IPC分类号： H01L2720
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814 , Y10S73/01
摘要： In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
摘要翻译：一方面，本发明提供一种包括第一单晶硅晶片层的半导体传感器。在第一晶片层中形成单晶硅结构。该结构包括两个相对布置的基本垂直的主表面和两个相对布置的大体水平的小的表面。主表面与次表面的纵横比至少为5：1。包括凹陷区域的载体被固定到第一晶片层，使得所述结构与凹陷区域相对地悬挂。

42. 发明授权

US4724043A Process for forming a master mold for optical storage disks 失效
标题翻译：用于形成光存储盘的主模的工艺
公开(公告)号：US4724043A
公开(公告)日：1988-02-09
申请号：US943845
申请日：1986-12-24
申请人： Albert S. Bergendahl , Paul E. Cade , Norman T. Gonnella , Francis S. Luecke , Kurt E. Petersen
发明人： Albert S. Bergendahl , Paul E. Cade , Norman T. Gonnella , Francis S. Luecke , Kurt E. Petersen
IPC分类号： G11B7/26 , G11B23/00 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G11B23/0057 , G11B7/261
摘要： A method for forming a master mold for optical storage disks includes thermally growing an oxide or nitride layer on a semiconductor wafer. The thermally grown layer is then coated with a photoresist. The photoresist is exposed to a laser beam to form a data pattern and developed. The oxide or nitride under the developed pattern is etched and the photoresist stripped to provide a semiconductor master mold for optical disks.
摘要翻译：用于形成用于光学存储盘的母模的方法包括在半导体晶片上热生长氧化物或氮化物层。然后用光致抗蚀剂涂覆热生长层。将光致抗蚀剂暴露于激光束以形成数据图案并显影。在显影图案下的氧化物或氮化物被蚀刻并且光致抗蚀剂剥离以提供用于光盘的半导体母模。

43. 发明授权

US4617086A Rapid etching method for silicon by SF.sub.6 gas 失效
标题翻译：通过SF6气体快速蚀刻硅
公开(公告)号：US4617086A
公开(公告)日：1986-10-14
申请号：US360027
申请日：1982-03-19
申请人： Tung J. Chuang , Frances A. Houle , Kurt E. Petersen
发明人： Tung J. Chuang , Frances A. Houle , Kurt E. Petersen
IPC分类号： H01L21/3065 , B44C1/22 , C03C15/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/3065
摘要： A method of etching silicon with a laser at a very fast rate of the order of 45 microns/second includes the steps of providing an atmosphere of sulfur hexafluoride about the silicon and directing a continuous laser beam having a wavelength of about 0.6 or less microns at said silicon.
摘要翻译：以45微米/秒的非常快的速率用激光蚀刻硅的方法包括以下步骤：在硅周围提供六氟化硫气氛，并将波长为约0.6或更小的微米的连续激光束引导到说硅。

44. 发明授权

US4543457A Microminiature force-sensitive switch 失效
标题翻译：微型力敏感开关
公开(公告)号：US4543457A
公开(公告)日：1985-09-24
申请号：US573509
申请日：1984-01-25
申请人： Kurt E. Petersen , Henry V. Allen , James W. Knutti
发明人： Kurt E. Petersen , Henry V. Allen , James W. Knutti
IPC分类号： H01H35/14 , H01H1/00 , H01H35/26 , H01H35/34 , H01H37/46
CPC分类号： H01H1/0036 , G01P2015/0828 , H01H2001/0005 , H01H2037/008 , H01H35/14 , H01H35/2657 , H01H35/346 , H01H37/46 , Y10T307/773
摘要： A microminiature switch for digitizing different-valued external conditions, such as pressure, temperature of acceleration, is disclosed. The switch includes a silicon wafer having a deflectable, reduced-thickness membrane adapted to move from a relaxed position toward increasingly flexed or bulged positions in response to greater-value changes in such external condition. Movement of the membrane from its relaxed position to more strained positions establishes electrical contact between a common terminal and first one and then progressively more switch-state terminals in the switch, wherein the number of switch states which are closed corresponds to the external condition acting on the switch.
摘要翻译：公开了一种用于数字化不同值的外部条件（例如压力，加速温度）的微型开关。该开关包括具有可偏转的减薄膜的硅晶片，其适于从这种外部状态的更大值的变化而从松弛位置向越来越弯曲或凸出的位置移动。膜从其松弛位置移动到更紧张的位置，建立了公共端和第一个之间的电接触，然后在开关中逐渐增加开关状态端子，其中闭合的开关状态的数量对应于作用于开关。

45. 发明授权

US06226233B1 Magneto-optical system utilizing MSR media 失效
标题翻译：利用MSR介质的磁光系统
公开(公告)号：US06226233B1
公开(公告)日：2001-05-01
申请号：US08844208
申请日：1997-04-18
申请人： Terry McDaniel , Jeffrey P. Wilde , Joseph E. Davis , John F. Heanue , Jeff Drazan , Kurt E. Petersen , Jerry E. Hurst, Jr. , Joseph Drake
发明人： Terry McDaniel , Jeffrey P. Wilde , Joseph E. Davis , John F. Heanue , Jeff Drazan , Kurt E. Petersen , Jerry E. Hurst, Jr. , Joseph Drake
IPC分类号： G11B1100
CPC分类号： G02B6/126 , G02B6/105 , G02B6/4246 , G02B26/0833 , G02B26/0841 , G02B26/0866 , G11B7/0037 , G11B7/08564 , G11B7/08576 , G11B7/0901 , G11B7/122 , G11B7/127 , G11B7/135 , G11B7/1362 , G11B7/1365 , G11B7/1372 , G11B7/1374 , G11B7/1384 , G11B7/14 , G11B7/22 , G11B11/10515 , G11B11/10532 , G11B11/10534 , G11B11/10541 , G11B11/10543 , G11B11/10554 , G11B11/10563 , G11B11/10569 , G11B11/1058 , G11B11/10595 , H02N1/008 , H04B10/2572
摘要： A system for maximum magneto-optical data storage system is provided. The system utilizes double-sided first surface magnetically-induced super resolution storage media to provide the ability to access a data mark from a plurality of data marks within an optical spot size of an impinging optical beam of light.
摘要翻译：提供了一种用于最大磁光数据存储系统的系统。该系统利用双面第一表面磁感应超分辨率存储介质来提供从入射光束的光点尺寸内的多个数据标记访问数据标记的能力。

46. 发明授权

US6134207A Optical data storage system having optical microswitch 有权
标题翻译：具有光学微动开关的光学数据存储系统
公开(公告)号：US6134207A
公开(公告)日：2000-10-17
申请号：US135236
申请日：1998-08-17
申请人： John H. Jerman , John D. Grade , Joseph D. Drake , Kurt E. Petersen
发明人： John H. Jerman , John D. Grade , Joseph D. Drake , Kurt E. Petersen
IPC分类号： G02B6/35 , G02B6/42 , G02B26/08 , G11B7/0037 , G11B7/085 , G11B7/12 , G11B7/135 , G11B11/105 , H02N1/00 , G11B7/00
CPC分类号： H02N1/008 , G02B26/0833 , G02B26/0841 , G02B26/085 , G02B26/0866 , G02B6/4216 , G11B11/10543 , G11B7/122 , G11B7/1362 , G11B7/1384 , G02B6/3514 , G02B6/357 , G02B6/3584 , G11B11/10554 , G11B11/10563 , G11B11/1058 , G11B7/0037 , G11B7/08564
摘要： An optical microswitch for use with a laser beam that extends along a path comprising a body having an inlet port adapted to receive the laser beam and a plurality of outlet ports. A plurality of mirrors coupled to a plurality of micromotors carried by the body. The micromotors selectively move the mirrors from a first position out of the path of the laser beam to a second position into the path of the laser beam to direct the laser beam to one of the outlet ports. Each of the micromotors has at least one electrostatically-driven comb drive assembly therein for moving the respective mirror to one of the first and second positions. A controller is electrically coupled to the micromotors for providing control signals to the micromotors.
摘要翻译：一种用于激光束的光学微动开关，其沿着包括具有适于接收激光束的入口端口和多个出口端口的主体的路径延伸。耦合到由身体携带的多个微型马达的多个反射镜。微型电动机选择性地将反射镜从第一位置移出激光束的路径到达激光束的路径的第二位置，以将激光束引导到出口端口之一。每个微型马达都具有至少一个静电驱动梳驱动组件，用于将相应的反射镜移动到第一和第二位置之一。控制器电耦合到微型马达，用于向微型马达提供控制信号。

47. 发明授权

US4680606A Semiconductor transducer 失效
标题翻译：半导体传感器
公开(公告)号：US4680606A
公开(公告)日：1987-07-14
申请号：US617122
申请日：1984-06-04
申请人： James W. Knutti , Henry V. Allen , Kurt E. Petersen , Carl R. Kowalski
发明人： James W. Knutti , Henry V. Allen , Kurt E. Petersen , Carl R. Kowalski
IPC分类号： G01L9/04 , G01L1/18 , H01L29/84 , G01B7/16
CPC分类号： G01L1/18
摘要： A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.
摘要翻译：一种半导体传感器（10），包括在其一个表面中形成有阱（18）的基板和具有围绕所述阱的周边结合到所述基板的第一表面（26）的半导体层（14），以形成隔膜（30））和第二表面（28），所述第二表面（28）基本上与所述第一表面共面并且具有设置在所述阱上方的从其突出的基座（16）。基座的侧壁（32）基本上正交于半导体层的第二表面。提供装置（34）用于感测作为施加到基座的力的函数的振动膜的偏转。衬底包括从井的底部向上延伸以限制隔膜的偏转的突起（38）。

48. 发明授权

US4525766A Method and apparatus for forming hermetically sealed electrical feedthrough conductors 失效
标题翻译：用于形成密封的电馈通导体的方法和装置
公开(公告)号：US4525766A
公开(公告)日：1985-06-25
申请号：US573508
申请日：1984-01-25
申请人： Kurt E. Petersen
发明人： Kurt E. Petersen
IPC分类号： H01G7/00 , G01L9/00 , H01L23/31 , H01L23/485 , H01L29/84 , H04N9/09 , H05K5/02
CPC分类号： G01L9/0073 , Y10T29/435
摘要： Hermetically sealed electrical feedthrough conductors are formed across the periphery or boundary between a hermetically sealed region on a semiconductor substrate and a second or external region thereof by first forming a planar insulative layer on the surface of the silicon substrate along the predetermined path of the feedthrough conductor across the periphery, said insulative layer having at least one planar projection on each side thereof extending out from the path and coming to a point, and then forming thereon a planar metal feedthrough conductor layer that substantially covers the insulative layer, including corresponding metal planar projections. An insulator element sized to encapsulate the region to be sealed is then mallory bonded to the periphery, including the feedthrough conductor, so as to form a hermetic seal along the entire periphery including in the region of said feedthrough conductor. The planar projections form a compression bond that eliminates any tenting region that would otherwise form beneath the insulator element at the edges of the feedthrough conductor and the underlying insulative layer.
摘要翻译：通过首先沿着馈通导体的预定路径在硅衬底的表面上形成平面绝缘层，在半导体衬底上的气密密封区域和第二或外部区域之间的周边或边界上形成密封电馈通导体所述绝缘层在其每一边上至少有一个从该路径延伸出来的一个平面突起并且到达一个点，然后在其上形成基本上覆盖绝缘层的平面金属馈通导体层，包括相应的金属平面突起。尺寸为封装要密封的区域的绝缘体元件然后与包括馈通导体在内的周边连接，以便沿着包括所述馈通导体的区域中的整个周边形成气密密封。平面突起形成压接，消除了在馈通导体和下面的绝缘层的边缘处不会在绝缘体元件下方形成的任何突起区域。

49. 发明授权

US4861420A Method of making a semiconductor transducer 失效
标题翻译：制造半导体换能器的方法
公开(公告)号：US4861420A
公开(公告)日：1989-08-29
申请号：US73675
申请日：1987-07-14
申请人： James W. Knutti , Henry V. Allen , Kurt E. Petersen , Carl R. Kowalski
发明人： James W. Knutti , Henry V. Allen , Kurt E. Petersen , Carl R. Kowalski
IPC分类号： G01L1/18
CPC分类号： G01L1/18 , Y10S438/977
摘要： A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially parallel to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer and are formed by sawing edge portions of said semiconductor layer. The substrate includes structures (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.
摘要翻译：一种半导体传感器（10），包括在其一个表面中形成有阱（18）的基板和具有围绕所述阱的周边结合到所述基板的第一表面（26）的半导体层（14），以形成隔膜（30））和基本上平行于第一表面的第二表面（28），并且具有设置在井上方的从其突出的基座（16）。基座的侧壁（32）基本上与半导体层的第二表面正交，并且通过锯切所述半导体层的边缘部分而形成。衬底包括从井的底部向上延伸以限制隔膜的偏转的结构（38）。

50. 发明授权

US4561040A Cooling system for VLSI circuit chips 失效
标题翻译： VLSI电路芯片的冷却系统
公开(公告)号：US4561040A
公开(公告)日：1985-12-24
申请号：US630031
申请日：1984-07-12
申请人： Dean E. Eastman , Jerome M. Eldridge , Kurt E. Petersen , Graham Olive
发明人： Dean E. Eastman , Jerome M. Eldridge , Kurt E. Petersen , Graham Olive
IPC分类号： F28F27/02 , H01L23/473 , H05K7/20
CPC分类号： H01L23/4332 , F28F9/0278 , H01L23/473 , H01L2224/16 , H01L2924/3011
摘要： A system for cooling integrated circuit chips and particularly those involving very large scale integrated circuits; the system provides for closely associating the heat-sink or heat exchange element with the integrated circuit chip by having the heat-sink, in the form of a "cooling chip", in intimate contact with the back surface of an integrated circuit chip (in a "flip chip" configuration, the front, or circuit-implemented, surface, makes contact with a ceramic carrier or module); the cooling chip is provided with a plurality of spaced parallel grooves which extend along the one side or surface opposite the surface that is in bearing contact with the integrated circuit chip, whereby liquid coolant flows through the grooves so as to remove heat from the integrated circuit chip; further included in the system is a specially configured bellows for conducting the liquid coolant from a source to the heat-sink, and for removing the liquid coolant; a coolant distribution means, in the form of at least one glass plate or manifold, is provided with spaced passageways interconnecting the respective incoming and outgoing coolant flow paths of the bellows with the heat-sink.
摘要翻译：用于冷却集成电路芯片的系统，特别是涉及非常大规模集成电路的芯片; 该系统通过将散热器与“集成电路芯片”的后表面紧密接触，形成“冷却芯片”的形式，使散热器或热交换元件与集成电路芯片紧密相关一个“倒装芯片”配置，前面或电路实现的表面与陶瓷载体或模块接触）; 冷却芯片设置有多个间隔开的平行凹槽，其沿着与集成电路芯片轴承接触的表面相对的一侧或表面延伸，由此液体冷却剂流过凹槽，以便从集成电路移除热量芯片; 进一步包括在系统中的是专门构造的波纹管，用于将液体冷却剂从源传导到散热器，并用于去除液体冷却剂; 形成至少一个玻璃板或歧管形式的冷却剂分配装置设置有将波纹管的相应进入和流出冷却剂流动路径与散热器互连的间隔通道。

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