专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20100148168A1 INTEGRATED CIRCUIT STRUCTURE 审中-公开
标题翻译：集成电路结构
公开(公告)号：US20100148168A1
公开(公告)日：2010-06-17
申请号：US12494304
申请日：2009-06-30
申请人： Chih-Ming Lai , Chun-Cheng Cheng , Yung-Hui Yeh
发明人： Chih-Ming Lai , Chun-Cheng Cheng , Yung-Hui Yeh
IPC分类号： H01L29/24
CPC分类号： H01L29/45 , H01L27/1225 , H01L27/1233 , H01L27/1251
摘要： An integrated circuit structure including a substrate, an insulating layer, a first transistor and a second transistor is provided. The insulating layer, the first transistor and the second transistor are disposed on the substrate. The first transistor includes a first gate, a first oxide semiconductor layer, a first source and a first drain. A portion of the first source and the first drain directly contacting the first oxide semiconductor layer is composed of a Ti-containing metal. The second transistor includes a second gate, a second oxide semiconductor layer, a second source and a second drain. A portion of the second source and the second drain directly contacting the second oxide semiconductor layer is composed of a none-Ti-containing metal. In addition, the first oxide semiconductor layer and the second oxide semiconductor layer may have different thickness or different carrier concentrations.
摘要翻译：提供了包括基板，绝缘层，第一晶体管和第二晶体管的集成电路结构。绝缘层，第一晶体管和第二晶体管设置在基板上。第一晶体管包括第一栅极，第一氧化物半导体层，第一源极和第一漏极。与第一氧化物半导体层直接接触的第一源极和第一漏极的一部分由含钛金属构成。第二晶体管包括第二栅极，第二氧化物半导体层，第二源极和第二漏极。与第二氧化物半导体层直接接触的第二源极和第二漏极的一部分由不含Ti的金属构成。此外，第一氧化物半导体层和第二氧化物半导体层可以具有不同的厚度或不同的载流子浓度。

42. 发明授权

US07725861B2 Method, apparatus, and system for LPC hot spot fix 有权
标题翻译： LPC热点修复的方法，设备和系统
公开(公告)号：US07725861B2
公开(公告)日：2010-05-25
申请号：US11689197
申请日：2007-03-21
申请人： Yi-Kan Cheng , Chih-Ming Lai , Ru-Gun Liu
发明人： Yi-Kan Cheng , Chih-Ming Lai , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5077
摘要： Efficient and cost-effective systems and methods for detecting and correcting hot spots of semiconductor devices are disclosed. In one aspect, a method for creating a layout from a circuit design is described. The method includes applying a first set of hot spot conditions to a global route to produce a detailed route; applying a second set of hot spot conditions to the detailed route to produce a post-detailed route; and applying a third set of hot spot conditions to the post-detailed route to produce the layout. In another aspect, a method includes providing a circuit design; applying a first hot spot filter to a global routing of the circuit design to produce a detailed route; applying a less pessimistic, second hot spot filter to the detailed route to produce a post-detailed route; and performing a rip-up and reroute of the post-detailed route to produce a final layout.
摘要翻译：公开了用于检测和校正半导体器件的热点的高效且成本有效的系统和方法。在一个方面，描述了一种用于从电路设计创建布局的方法。该方法包括将第一组热点条件应用于全局路由以产生详细路由; 将第二组热点条件应用于详细路线以产生后详细路线; 以及将第三组热点条件应用于后详细路线以产生布局。另一方面，一种方法包括提供电路设计; 将第一热点滤波器应用于电路设计的全局路由以产生详细的路由; 在详细的路线上应用较不悲观的第二热点过滤器，以产生详细的路线; 并执行后期详细路线的撤销和重新路线以产生最终布局。

43. 发明授权

US07722239B2 Logo display 失效
标题翻译：徽标显示
公开(公告)号：US07722239B2
公开(公告)日：2010-05-25
申请号：US11964807
申请日：2007-12-27
申请人： Shu-Hui Hsieh , Chih-Ming Lai
发明人： Shu-Hui Hsieh , Chih-Ming Lai
IPC分类号： F21V8/00 , G09F13/18
CPC分类号： G09F13/06 , G02B6/0078 , G09F13/04 , Y10S362/812
摘要： A logo display includes a light guide plate including a light emitting surface, a plurality of light emitting diodes (LEDs) optically coupled to the light guide plate, and a light-transmissive layer disposed on the light emitting surface of the light guide plate. A light-transmissive colored pattern is formed on the light-transmissive layer. The light-transmissive colored pattern is configured for filtering out a color component of the light incident on the light-transmissive layer same as a color of the light-transmissive colored pattern.
摘要翻译：徽标显示器包括：导光板，包括发光表面;光耦合到导光板的多个发光二极管;以及设置在导光板的发光表面上的透光层。在透光层上形成透光的着色图案。透光着色图案被配置为滤除与透光着色图案的颜色相同的入射在透光层上的光的颜色分量。

44. 发明授权

US07709823B2 Group-III nitride vertical-rods substrate 有权
标题翻译： III族氮化物垂直杆基板
公开(公告)号：US07709823B2
公开(公告)日：2010-05-04
申请号：US11552527
申请日：2006-10-25
申请人： Chih-Ming Lai , Wen-Yueh Liu , Jenq-Dar Tsay , Jung-Tsung Hsu , Shang-Jr Gwo , Chang-Hong Shen , Hon-Way Lin
发明人： Chih-Ming Lai , Wen-Yueh Liu , Jenq-Dar Tsay , Jung-Tsung Hsu , Shang-Jr Gwo , Chang-Hong Shen , Hon-Way Lin
IPC分类号： H01L29/12
CPC分类号： H01L29/0657 , B82Y10/00 , C30B25/183 , C30B29/403 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L33/007 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.
摘要翻译：本发明涉及III族氮化物垂直杆衬底。 III族垂直杆基板包括基板，缓冲层和垂直杆层。缓冲层位于衬底上。垂直杆层位于缓冲层上，垂直杆层由站在缓冲层上的多个垂直杆组成。

45. 外观设计

USD611080S1 Optical lens 有权
标题翻译：光学镜头
公开(公告)号：USD611080S1
公开(公告)日：2010-03-02
申请号：US29338363
申请日：2009-06-10
申请人： Tien-Pao Chen , An-Chi Wei , Chih-Ming Lai
设计人： Tien-Pao Chen , An-Chi Wei , Chih-Ming Lai

46. 外观设计

USD611078S1 Optical lens 有权
公开(公告)号：USD611078S1
公开(公告)日：2010-03-02
申请号：US29338222
申请日：2009-06-08
申请人： Tien-Pao Chen , An-Chi Wei , Chih-Ming Lai
设计人： Tien-Pao Chen , An-Chi Wei , Chih-Ming Lai

47. 外观设计

USD610598S1 Optical lens 有权
公开(公告)号：USD610598S1
公开(公告)日：2010-02-23
申请号：US29337980
申请日：2009-06-02
申请人： An-Chi Wei , Chih-Ming Lai
设计人： An-Chi Wei , Chih-Ming Lai

48. 外观设计

USD608809S1 Optical lens 有权
公开(公告)号：USD608809S1
公开(公告)日：2010-01-26
申请号：US29338361
申请日：2009-06-10
申请人： Tien-Pao Chen , An-Chi Wei , Chih-Ming Lai
设计人： Tien-Pao Chen , An-Chi Wei , Chih-Ming Lai

49. 外观设计

USD607423S1 Light-emitting diode substrate 有权
公开(公告)号：USD607423S1
公开(公告)日：2010-01-05
申请号：US29330641
申请日：2009-01-12
申请人： Ying-Chieh Lu , Kuo-Feng Chiang , Chih-Ming Lai
设计人： Ying-Chieh Lu , Kuo-Feng Chiang , Chih-Ming Lai

50. 发明申请

US20090058263A1 WHITE LIGHT EMITTING DEVICE AND METHOD FOR MAKING SAME 有权
标题翻译：白光发射装置及其制造方法
公开(公告)号：US20090058263A1
公开(公告)日：2009-03-05
申请号：US12135853
申请日：2008-06-09
申请人： Chih-Ming Lai
发明人： Chih-Ming Lai
IPC分类号： H01J1/62
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/508
摘要： A white light emitting device and a method for making the same are provided. The white light emitting device includes a light emitting diode (LED) chip, a fluorescent layer and a reflective layer. The LED chip includes a substrate and a light emitting structure formed on the substrate. The LED chip has a plurality of side walls. The light emitting structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer arranged in that order along a direction away from the substrate. The substrate has through hole formed therethrough and the first-type semiconductor layer is partially exposed. The fluorescent layer is formed in the through hole for wavelength conversion. The reflective layer is formed on the side walls and surrounds the LED chip.
摘要翻译：提供白色发光器件及其制造方法。白色发光器件包括发光二极管（LED）芯片，荧光层和反射层。 LED芯片包括形成在基板上的基板和发光结构。 LED芯片具有多个侧壁。发光结构包括沿着离开衬底的方向依次布置的第一类型半导体层，有源层和第二类型半导体层。基板具有通过其形成的通孔，并且第一类型半导体层部分地露出。荧光层形成在用于波长转换的通孔中。反射层形成在侧壁上并围绕LED芯片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式