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41. 发明申请

US20070242396A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 失效
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070242396A1
公开(公告)日：2007-10-18
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

42. 发明申请

US20070183098A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US20070183098A1
公开(公告)日：2007-08-09
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。氧化物的RA范围为0.10欧姆2至0.36欧姆2。

43. 发明授权

US08374060B2 Thermally-assisted magnetic recording method for writing data on a hard disk medium 有权
标题翻译：用于在硬盘介质上写入数据的热辅助磁记录方法
公开(公告)号：US08374060B2
公开(公告)日：2013-02-12
申请号：US13046117
申请日：2011-03-11
申请人： Koji Shimazawa , Tomohito Mizuno , Hiroshi Kiyono
发明人： Koji Shimazawa , Tomohito Mizuno , Hiroshi Kiyono
IPC分类号： G11B11/00
CPC分类号： G11B5/65 , G11B5/314 , G11B5/6088 , G11B5/66 , G11B2005/0021
摘要： A thermally-assisted magnetic recording method includes first and second steps. The first step applies heat to part of a hard disk medium and forms a moving high-temperature region in a magnetic recording layer of the hard disk medium. The high-temperature region is higher in temperature than a region therearound and has a temperature equal to or higher than the maximum coercivity vanishing temperature of a plurality of magnetic grains contained in the magnetic recording layer. At least one magnetic grain that is adjacent to the rear end of the high-temperature region in the direction of movement of the high-temperature region has a coercivity of a value other than 0. The second step applies a write magnetic field to the hard disk medium such that the write magnetic field applied to the at least one magnetic grain adjacent to the rear end of the high-temperature region is 3 kOe or smaller in magnitude.
摘要翻译：热辅助磁记录方法包括第一和第二步骤。第一步骤将热量施加到硬盘介质的一部分上，并在硬盘介质的磁记录层中形成移动的高温区域。高温区域的温度高于其周围的区域，并且具有等于或高于包含在磁记录层中的多个磁性颗粒的最大矫顽力消失温度的温度。在高温区域的移动方向上与高温区域的后端相邻的至少一个磁性颗粒具有除了0以外的值的矫顽力。第二步骤将写入磁场施加到硬使得施加到与高温区域的后端相邻的至少一个磁性颗粒的写入磁场的大小为3kOe以下。

44. 发明授权

US08169731B2 Near-field light transducer comprising propagation edge with predetermined curvature radius 有权
标题翻译：近场光传感器包括具有预定曲率半径的传播边
公开(公告)号：US08169731B2
公开(公告)日：2012-05-01
申请号：US12540752
申请日：2009-08-13
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B5/02 , G11B11/00
CPC分类号： G11B5/314 , G11B5/6088 , G11B2005/001
摘要： Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir.
摘要翻译：提供了具有传播边缘的近场光传感器，其中抑制了缺陷的产生。传感器由Ag合金形成并且包括边缘，边缘包括要与表面等离子体激元模式的光耦合的部分，边缘从该部分延伸到近场光产生端表面，并且该边缘是配置为传播由光激发的表面等离子体激元。此外，圆角边缘的曲率半径设定在6.25nm至20nm的范围内。在边缘及其附近，抑制诸如破裂和碎裂的缺陷的产生。从而改进了表面等离子体激元的传播效率和传感器的光利用效率。 Ag合金优选含有选自Pd，Au，Cu，Ru，Rh和Ir中的至少一种元素。

45. 发明授权

US07920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer 有权
标题翻译：磁阻器件包括包括半导体氧化物层的多层间隔物
公开(公告)号：US07920362B2
公开(公告)日：2011-04-05
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。自由层的功能使得其磁化方向根据外部磁场而变化。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。在它们之间插入半导体氧化物层。形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

46. 发明授权

US07885042B2 CPP magneto-resistive effect device utilizing an anti-oxidizing layer as part of the spacer layer in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
标题翻译：在可用于硬盘系统中的头部万向节组件的薄膜磁头中使用抗氧化层作为间隔层的一部分的CPP磁阻效应器件
公开(公告)号：US07885042B2
公开(公告)日：2011-02-08
申请号：US11870097
申请日：2007-10-10
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3272 , H01F41/305 , Y10T29/49044 , Y10T29/49048
摘要： A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及间隔层插入在它们之间的固定磁化层和自由层，并以层叠方向施加感测电流。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。半导体层是n型氧化物半导体。当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一非磁性金属层和半导体层之间形成抗氧化层。抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。

47. 发明授权

US07535682B2 Magneto-resistance element and thin film magnetic head with improved heat reliability 有权
标题翻译：磁阻元件和薄膜磁头，提高了热可靠性
公开(公告)号：US07535682B2
公开(公告)日：2009-05-19
申请号：US11519854
申请日：2006-09-13
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , H01F1/408 , H01F10/1936 , H01F10/3272
摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.
摘要翻译：根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X2YZ（其中X为贵金属元素，Y为过渡层）的Heusler合金层 Mn，V或Ti基的金属，Z是III族至V族的元素），组成X的一部分被Co替代，组合物X中的Co的原子组成比为0.5〜0.85。

48. 发明申请

US20090086383A1 CPP type magneto-resistive effect device and magnetic disk system 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20090086383A1
公开(公告)日：2009-04-02
申请号：US11865384
申请日：2007-10-01
申请人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
发明人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.
摘要翻译：本发明提供了包括间隔层的CPP（电流垂直于平面）结构（CPP-GMR器件）的巨磁阻效应器件，以及与夹在它们之间的间隔层堆叠在一起的第一铁磁层和第二铁磁层，其中感测电流在层叠方向上通过，其中第一铁磁层和第二铁磁层的功能使得两个磁体的磁化方向之间产生的角度根据外部磁场而相对地改变，所述间隔层包含半导体氧化物层和氮元素界面保护层设置在形成全部或一部分所述间隔层的半导体氧化物层与绝缘层接触的位置。因此，在半导体氧化物层和界面保护层的结的表面形成有高共价键合能力的氮化物，从而抑制氧从半导体氧化物层向绝缘层的迁移; 即使该装置在该过程中经受热和应力，阻止装置特性的波动和劣化。

49. 发明授权

US07510787B2 Magneto-resistance effect element and thin-film magnetic head 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US07510787B2
公开(公告)日：2009-03-31
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。该氧化物的RA为0.10〜2μm，峰值为0.36μmol。

50. 发明申请

US20080174920A1 CPP TYPE MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISC SYSTEM 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20080174920A1
公开(公告)日：2008-07-24
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/56 , G11B5/127
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

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