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41. 发明申请

US20150152568A1 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE 有权
标题翻译：生产GaN体积晶体衬底和形成GaN大块晶体衬底的半导体器件
公开(公告)号：US20150152568A1
公开(公告)日：2015-06-04
申请号：US14619237
申请日：2015-02-11
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译：晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。

42. 发明授权

US08569211B2 Method of applying a herbicidal composition 有权
标题翻译：施用除草组合物的方法
公开(公告)号：US08569211B2
公开(公告)日：2013-10-29
申请号：US12918224
申请日：2009-02-18
申请人： Kaihei Koshio , Hirokazu Ohike , Daijiro Shiino , Masahiko Shimada , Kuniaki Tsuruoka , Aiko Yamanaka
发明人： Kaihei Koshio , Hirokazu Ohike , Daijiro Shiino , Masahiko Shimada , Kuniaki Tsuruoka , Aiko Yamanaka
IPC分类号： A01N37/00
CPC分类号： A01N37/12
摘要： The invention provides a herbicidal composition containing, as an active ingredient, glycerol fatty acid ester obtained from fatty acid having an even-numbered carbon number of 6-12 and glycerol.
摘要翻译：本发明提供一种除草组合物，其含有由偶数碳数为6-12的脂肪酸和甘油获得的甘油脂肪酸酯作为活性成分。

43. 发明授权

US08304164B2 Photoresist composition 有权
标题翻译：光刻胶组成
公开(公告)号：US08304164B2
公开(公告)日：2012-11-06
申请号：US12983594
申请日：2011-01-03
申请人： Tatsuro Masuyama , Yuichi Mukai , Masahiko Shimada
发明人： Tatsuro Masuyama , Yuichi Mukai , Masahiko Shimada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041
摘要： The present invention provides a photoresist composition comprising: at least one selected from the group consisting of a monomer represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, W1 represents a C3-C20 divalent saturated cyclic hydrocarbon group, A1 represents a single bond or *-O—CO—W1— wherein * represents a binding position to W1═N— and W1 represents a C1-C10 divalent saturated hydrocarbon group, a polymer consisting of a structural unit derived from the monomer represented by the formula (I) and a polymer consisting of a structural unit derived from the monomer represented by the formula (I) and a structural unit derived from a monomer represented by the formula (II): wherein R3 represents a hydrogen atom or a methyl group, A2 represents a single bond or *-O—CO—(CH2)n— wherein * represents a binding position to R4—, n represents an integer of 1 to 7 and R4 represents a C3-C20 saturated cyclic hydrocarbon group, a resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.
摘要翻译：本发明提供一种光致抗蚀剂组合物，其包括：选自由式（I）表示的单体中的至少一种：其中R1表示氢原子或甲基，W1表示C3-C20二价饱和环状烃基，A1表示单键或* -O-CO-W1-，其中*表示与W1 = N-的结合位置，W1表示C1-C10二价饱和烃基，由衍生自所表示的单体的结构单元组成的聚合物由式（I）表示的结构单元和由式（I）表示的单体衍生的结构单元和由式（II）表示的单体衍生的结构单元构成的聚合物：其中，R3表示氢原子或甲基基团，A2表示单键或* -O-CO-（CH2）n-，其中*表示与R4-的结合位置，n表示1〜7的整数，R4表示C3-C20饱和环状烃基，树脂加工 g酸性不稳定基团，并且在碱性水溶液中不溶或难溶，但是通过酸和酸产生剂可溶于碱性水溶液。

44. 发明授权

US07998656B2 Chemically amplified positive resist composition 有权
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US07998656B2
公开(公告)日：2011-08-16
申请号：US12536239
申请日：2009-08-05
申请人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
发明人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a chemically amplified positive composition comprising: a resin comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or —(CH2)k—CO—X4—, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and an acid generator.
摘要翻译：本发明提供一种化学放大阳性组合物，其包含：包含由式（I）表示的结构单元的树脂：其中R1表示氢原子，卤素原子，C1-C4烷基或C1-C4全氟烷基， Z表示单键或 - （CH 2）k -CO-X 4 - ，k表示1〜4的整数，X 1，X 2，X 3，X 4各自独立地表示氧原子或硫原子，m表示1的整数 3，n表示0〜3的整数，酸产生剂。

45. 发明授权

US07828896B2 Methods of growing a group III nitride crystal 有权
标题翻译：生长III族氮化物晶体的方法
公开(公告)号：US07828896B2
公开(公告)日：2010-11-09
申请号：US11878125
申请日：2007-07-20
申请人： Hirokazu Iwata , Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masato Aoki
发明人： Hirokazu Iwata , Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masato Aoki
IPC分类号： C30B11/04
CPC分类号： H01L29/7787 , C30B11/00 , C30B29/403 , C30B29/406 , H01L29/2003 , Y10T428/2982
摘要： A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
摘要翻译：生长III族氮化物晶体的方法从溶解有碱金属，III族金属和氮的溶液中生长III族氮化物晶体，并且在该溶液中包含增加氮的溶解度的材料解。

46. 发明申请

US20090173274A1 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED THEREON 有权
标题翻译：制造GaN大块晶体基板及其形成的半导体器件
公开(公告)号：US20090173274A1
公开(公告)日：2009-07-09
申请号：US12367013
申请日：2009-02-06
申请人： Seiji SARAYAMA , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
发明人： Seiji SARAYAMA , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
IPC分类号： H01L21/322
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译：晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长的阴极发光光谱中显示出最强峰。

47. 发明申请

US20070012239A1 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon 有权
标题翻译：生产GaN体晶衬底及其上形成的半导体器件
公开(公告)号：US20070012239A1
公开(公告)日：2007-01-18
申请号：US11408656
申请日：2006-04-20
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
IPC分类号： C30B7/00 , C30B21/02 , C30B28/06
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译：晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。

48. 发明授权

US07008783B1 Gene encoding chondroitinase ABC and uses therefor 失效
标题翻译：基因编码软骨素酶ABC并用于此
公开(公告)号：US07008783B1
公开(公告)日：2006-03-07
申请号：US08488960
申请日：1995-06-07
申请人： Nobuyuki Sato , Masahiko Shimada , Hiroshi Oda
发明人： Nobuyuki Sato , Masahiko Shimada , Hiroshi Oda
IPC分类号： C12N9/88 , C12N15/60 , C12N15/63 , C12N5/10 , C12N1/00 , C12N1/21
CPC分类号： C12Y402/02004 , C12N9/88
摘要： Nucleic acid sequences coding for the chondroitinase ABC gene and isolated chondroitinase ABE protein produced in a host cell transformed with a nucleic acid vector directing the expression of a nucleotide sequence coding for chondroitinase ABE protein described. Chondroitinase ABC prepared by chemical synthesis also described. Monoclonal and polyclonal antibodies which are specifically reactive with chondroitinase ABC protein are disclosed. The isolated chondroitinase ABC can be used in methods of treating intervertebral disc replacement, promoting neurite regeneration, and detecting galactosaminoglycans.
摘要翻译：编码软骨素酶ABC基因的核酸序列和分离的软骨素酶ABE蛋白质在用指导编码软骨素酶ABE蛋白质的核苷酸序列的表达的核酸载体转化的宿主细胞中产生。通过化学合成制备的软骨素酶ABC也有描述。公开了与软骨素酶ABC蛋白特异性反应的单克隆和多克隆抗体。分离的软骨素酶ABC可用于治疗椎间盘置换，促进神经突再生和检测半乳糖胺聚糖的方法。

49. 发明授权

US07001457B2 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device 有权
公开(公告)号：US07001457B2
公开(公告)日：2006-02-21
申请号：US10134895
申请日：2002-04-30
申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
发明人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
IPC分类号： C30B9/10
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , H01L33/007 , H01S5/32341 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1052 , Y10T117/106
摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

50. 发明授权

US06780239B2 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device 有权
标题翻译：晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件
公开(公告)号：US06780239B2
公开(公告)日：2004-08-24
申请号：US09981848
申请日：2001-10-16
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Masato Aoki
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Masato Aoki
IPC分类号： C30B1700
CPC分类号： C01B21/06 , C30B11/002 , C30B29/403 , C30B29/406
摘要： A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.
摘要翻译：一种晶体生长方法，包括以下步骤：a）将氮材料送入其中包含碱金属和III族金属的混合熔融液体的反应容器中; 以及b）使用混合的熔融液体和由步骤a）引入的氮材料在III族氮化物中生长晶体，其中设置如防止碱金属的蒸气分散离开反应容器。

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