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41. 发明授权

US06828641B2 Semiconductor memory device using magneto resistive element and method of manufacturing the same 有权
标题翻译：使用磁阻元件的半导体存储器件及其制造方法
公开(公告)号：US06828641B2
公开(公告)日：2004-12-07
申请号：US10656283
申请日：2003-09-08
申请人： Keiji Hosotani , Kentaro Nakajima
发明人： Keiji Hosotani , Kentaro Nakajima
IPC分类号： H01L4300
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and comprising a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.
摘要翻译：半导体存储器件包括沿第一方向延伸的第一布线，沿与第一方向不同的第二方向延伸的第二布线和布置在第一和第二布线之间并包括第一部分和第二部分的磁阻元件，所述第二部分与所述第二布线接触并且沿着所述第二布线延伸以到达位于所述第一部分外侧的外部区域。

42. 发明授权

US06653703B2 Semiconductor memory device using magneto resistive element and method of manufacturing the same 有权
标题翻译：使用磁阻元件的半导体存储器件及其制造方法
公开(公告)号：US06653703B2
公开(公告)日：2003-11-25
申请号：US10125374
申请日：2002-04-19
申请人： Keiji Hosotani , Kentaro Nakajima
发明人： Keiji Hosotani , Kentaro Nakajima
IPC分类号： H01L4300
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , H01L27/224
摘要： A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and including a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.
摘要翻译：半导体存储器件包括沿第一方向延伸的第一布线，沿与第一方向不同的第二方向延伸的第二布线和布置在第一布线和第二布线之间并包括第一部分和第二部分的磁阻元件，所述第二部分与所述第二布线接触并且沿着所述第二布线延伸以到达位于所述第一部分外侧的外部区域。

43. 发明申请

US20050249029A1 Memory module and system, an information processing apparatus and a method of use 失效
标题翻译：内存模块和系统，信息处理设备和使用方法
公开(公告)号：US20050249029A1
公开(公告)日：2005-11-10
申请号：US11180558
申请日：2005-07-14
申请人： Koichi Fujisaki , Kentaro Nakajima , Takeshi Chujoh , Yasuhiro Taniguchi
发明人： Koichi Fujisaki , Kentaro Nakajima , Takeshi Chujoh , Yasuhiro Taniguchi
IPC分类号： G06F12/02 , G11C8/10 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C5/00
CPC分类号： G06F12/0207 , G11C8/10
摘要： A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner data is read from a magnetoresistive memory module in both row and column directions.
摘要翻译：存储单元模块包括由M列×N行的存储器单元形成的存储单元阵列。每个存储单元包括具有半导体元件的磁阻元件或磁阻元件。存储器模块包括通过列方向访问存储单元阵列的第一存取装置和通过行方向访问存储单元阵列的第二存取装置。以这种方式，在行和列方向上从磁阻存储器模块读取数据。

44. 发明授权

US06947312B2 MRAM having SAL layer 失效
标题翻译： MRAM具有SAL层
公开(公告)号：US06947312B2
公开(公告)日：2005-09-20
申请号：US10606733
申请日：2003-06-27
申请人： Kentaro Nakajima
发明人： Kentaro Nakajima
IPC分类号： H01L27/10 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L43/08 , G11C7/00
CPC分类号： G11C11/15
摘要： A second conductive layer is formed above a first conductive layer and arranged substantially perpendicular to the first conductive layer. A plurality of magneto-resistance effect elements are formed between the first and second conductive layers and arranged in the lengthwise direction of the first conductive layer and contain free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers. A magnetic layer is inserted between the first conductive layer and the magneto-resistance effect elements and causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.
摘要翻译：第二导电层形成在第一导电层之上并且基本上垂直于第一导电层布置。多个磁阻效应元件形成在第一和第二导电层之间并且沿第一导电层的长度方向布置，并且包含其自旋方向由第一和第二导电层引起的合成磁场被控制为反转的自由层，第二导电层。在第一导电层和磁阻效应元件之间插入磁性层，并且相对于磁阻效应元件的自由层引起磁性相互作用。

45. 发明申请

US20050020011A1 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US20050020011A1
公开(公告)日：2005-01-27
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

46. 发明授权

US06812511B2 Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof 有权
公开(公告)号：US06812511B2
公开(公告)日：2004-11-02
申请号：US10406387
申请日：2003-04-04
申请人： Kentaro Nakajima , Minoru Amano
发明人： Kentaro Nakajima , Minoru Amano
IPC分类号： H01L2976
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.

47. 发明授权

US06590244B2 Semiconductor memory device using magneto resistive effect element 有权
公开(公告)号：US06590244B2
公开(公告)日：2003-07-08
申请号：US10101702
申请日：2002-03-21
申请人： Yoshiaki Asao , Kazumasa Sunouchi , Kentaro Nakajima
发明人： Yoshiaki Asao , Kazumasa Sunouchi , Kentaro Nakajima
IPC分类号： H01L2976
CPC分类号： G11C5/025 , B82Y10/00 , G11C5/02 , G11C11/16 , H01L27/224 , H01L27/228 , H01L28/20 , H01L43/08
摘要： A memory cell section includes a first wiring which is extended in a first direction, and a second wiring which is extended in a second direction different from the first direction, and a third wiring which is disposed between the first and second wirings, and a first magneto resistive effect element which is disposed at an intersection of the first and second wirings between the first and second wirings, and is connected to the second and third wirings. Further, a peripheral circuit section includes a fourth wiring, and a fifth wiring which is disposed above the fourth wiring, and a second magneto resistive effect element which is disposed between the fourth and fifth wirings and is connected to the fourth and fifth wirings to be used as a resistive element.

48. 发明授权

US07376003B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07376003B2
公开(公告)日：2008-05-20
申请号：US10465616
申请日：2003-06-20
申请人： Yoshihisa Iwata , Yoshiaki Asao , Kentaro Nakajima
发明人： Yoshihisa Iwata , Yoshiaki Asao , Kentaro Nakajima
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.
摘要翻译：使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转元件。当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

49. 发明授权

US07123539B2 Memory modules with magnetoresistive elements and method of reading data from row or column directions 失效
标题翻译：具有磁阻元件的存储器模块和从行或列方向读取数据的方法
公开(公告)号：US07123539B2
公开(公告)日：2006-10-17
申请号：US11180558
申请日：2005-07-14
申请人： Koichi Fujisaki , Kentaro Nakajima , Takeshi Chujoh , Yasuhiro Taniguchi
发明人： Koichi Fujisaki , Kentaro Nakajima , Takeshi Chujoh , Yasuhiro Taniguchi
IPC分类号： G11C8/00
CPC分类号： G06F12/0207 , G11C8/10
摘要： A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.
摘要翻译：存储单元模块包括由M列×N行的存储器单元形成的存储单元阵列。每个存储单元包括具有半导体元件的磁阻元件或磁阻元件。存储器模块包括通过列方向访问存储单元阵列的第一存取装置和通过行方向访问存储单元阵列的第二存取装置。以这种方式，在行和列方向上从磁阻存储器模块读取数据。

50. 发明申请

US20050208682A1 Magnetic memory device and method of manufacturing the same 失效
公开(公告)号：US20050208682A1
公开(公告)日：2005-09-22
申请号：US11135337
申请日：2005-05-24
申请人： Kentaro Nakajima , Keiji Hosotani
发明人： Kentaro Nakajima , Keiji Hosotani
IPC分类号： H01L27/105 , H01L21/00 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L31/062 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/222 , H01L27/228
摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

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