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41. 发明授权

US07999231B2 Moisture detector, biological body moisture detector, natural product moisture detector, and product/material moisture detector 有权
标题翻译：水分检测仪，生物体水分检测仪，天然产物水分检测仪，以及产品/材料水分检测仪
公开(公告)号：US07999231B2
公开(公告)日：2011-08-16
申请号：US12508008
申请日：2009-07-23
申请人： Yasuhiro Iguchi , Youichi Nagai
发明人： Yasuhiro Iguchi , Youichi Nagai
IPC分类号： G01J5/20
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03042 , H01L31/03046 , Y02E10/544
摘要： A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.
摘要翻译：水分检测器包括具有pn结的吸收层或受光元件的阵列的光接收元件，其中吸收层具有由III-V族半导体组成的多量子阱结构，pn- 通过选择性地将杂质元素扩散到吸收层中而形成结，并且吸收层中的杂质浓度为5×1016 / cm3以下。水分检测器接收具有在3μm以下的波长范围内的水的吸收带中包含的至少一个波长的光，从而检测水分。

42. 发明授权

US07332751B2 Rear-illuminated-type photodiode array 有权
标题翻译：后照式光电二极管阵列
公开(公告)号：US07332751B2
公开(公告)日：2008-02-19
申请号：US11073322
申请日：2005-03-04
申请人： Yasuhiro Iguchi
发明人： Yasuhiro Iguchi
IPC分类号： H01L31/072
CPC分类号： H01L27/1446
摘要： A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.
摘要翻译：背照式光电二极管阵列具有（a）第一导电型半导体基板，（b）第一导电型电极，其设置在半导体基板的后侧，并且具有一或二个开口（c）设置在第一导电型电极的每个开口处的抗反射涂层，（d）形成在基板的正面侧的第一导电型吸收层，（e）设置在吸收层上并具有比吸收层的吸收边长波长的吸收边缘波长的漏光波吸收层，（f）多个第二导电型区域，光吸收层从上表面延伸到吸收层一定程度，并且在相反侧的抗反射涂层的位置一一或二维地排列，（g）一个设置在每个第二导电型区域的顶表面上的导电型电极。

43. 发明授权

US06835990B2 Semiconductor light receiving element 失效
标题翻译：半导体光接收元件
公开(公告)号：US06835990B2
公开(公告)日：2004-12-28
申请号：US10359582
申请日：2003-02-07
申请人： Yasuhiro Iguchi , Akira Yamaguchi , Manabu Shiozaki , Takashi Iwasaki , Kenji Ohki
发明人： Yasuhiro Iguchi , Akira Yamaguchi , Manabu Shiozaki , Takashi Iwasaki , Kenji Ohki
IPC分类号： H01L310232
CPC分类号： H01L31/02165 , G02B6/29361 , G02B6/4214
摘要： A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.
摘要翻译：半导体光接收元件具有半导体部分。半导体部分包括基板，光检测部分和滤波部分。基板，光检测部分和滤光器部分沿预定轴线方向依次设置。光检测部分具有包括III-V半导体层的光吸收层，包括III-V半导体层的窗口层和阳极半导体区域。光吸收层是n或i导电型半导体层。光吸收层设置在III-V半导体层和窗口层之间。光检测部分设置在半导体衬底的一个表面上，其间插入III-V半导体层。滤波器部分包括InGaAsP半导体层和III-V半导体层。

44. 发明授权

US06696740B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US06696740B2
公开(公告)日：2004-02-24
申请号：US10310924
申请日：2002-12-06
申请人： Yoshiki Kuhara , Yasuhiro Iguchi
发明人： Yoshiki Kuhara , Yasuhiro Iguchi
IPC分类号： H01L3106
CPC分类号： G02B6/4246 , H01L31/02162 , H01L31/1035 , H01L2224/48091 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A photodiode that is used in an optical communication system using two different wavelengths, &lgr;1 and &lgr;2 (&lgr;1
摘要翻译：在光通信系统中使用的光电二极管，其使用两个不同的波长λ1和λ2（λ1<λ2），并且能够减少由具有较长波长λ2的出射光引起的光学串扰。接收具有较短波长λ1的光的光电二极管设置有由具有带隙波长的材料制成的吸收层。（λ1

45. 发明授权

US06683326B2 Semiconductor photodiode and an optical receiver 有权
标题翻译：半导体光电二极管和光接收器
公开(公告)号：US06683326B2
公开(公告)日：2004-01-27
申请号：US09986366
申请日：2001-11-08
申请人： Yasuhiro Iguchi , Yoshiki Kuhara
发明人： Yasuhiro Iguchi , Yoshiki Kuhara
IPC分类号： H01L2715
CPC分类号： H01L31/1035 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive domain that is formed in the photo-detecting layer, and another electrode is formed on the partly exposed peripheral area of the highly-doped buffer layer by removing a part of the photo-detecting layer. As the semi-insulating substrate absorbs less light in the substrate, a decrease of sensitivity by the substrate absorption can be prevented.
摘要翻译：本发明涉及高灵敏度顶电极和底照型光电二极管。该器件由高度掺杂的缓冲层，半绝缘衬底上的光电检测层组成。在形成在光检测层中的导电畴上形成电极，另一电极通过去除一部分光检测层而形成在高掺杂缓冲层的局部露出的周边区域上。由于半绝缘基板吸收较少的基板中的光，可以防止基板吸收的灵敏度的降低。

46. 发明授权

US5910014A Method of making compound semiconductor photodetector 失效
标题翻译：制备化合物半导体光电探测器的方法
公开(公告)号：US5910014A
公开(公告)日：1999-06-08
申请号：US589248
申请日：1996-01-23
申请人： Takashi Iwasaki , Nobuhisa Tanaka , Yasuhiro Iguchi , Naoyuki Yamabayashi
发明人： Takashi Iwasaki , Nobuhisa Tanaka , Yasuhiro Iguchi , Naoyuki Yamabayashi
IPC分类号： H01L21/28 , H01L21/22 , H01L31/10 , H01L31/103 , H01L31/18
CPC分类号： H01L31/1844 , H01L31/022416 , H01L31/103 , Y02E10/544
摘要： InGaAs photodiodes are produced on an epitaxial InP wafer having an InP substrate, epitaxially grown layers and an InGaAs light sensing layer. An insulating protection film of SixNy or SiOx with openings is selectively deposited on the epitaxial wafer. Compound semiconductor undercoats of a compound semiconductor with a narrower band gap than InP are grown on the InP window layers at the openings by utilizing the protection film as a mask. A p-type impurity from a solid source or a gas source is diffused through the undercoats and the epitaxial InP layer into the InGaAs sensing layer. Then, either p-electrodes are formed on the undercoats and the undercoats are etched by utilizing the p-electrodes as a mask, or the undercoats are shaped by selective etching in a form of p-electrodes and the p-electrodes are formed on the undercoats.
摘要翻译： InGaAs光电二极管在具有InP衬底，外延生长层和InGaAs光感测层的外延InP晶片上产生。在外延晶片上选择性地沉积具有开口的SixNy或SiOx的绝缘保护膜。通过利用保护膜作为掩模，在开口处的InP窗口层上生长具有比InP窄的带隙的化合物半导体的化合物半导体底漆。来自固体源或气体源的p型杂质通过底涂层和外延InP层扩散到InGaAs感测层中。然后，在底涂层上形成p-电极，通过利用p电极作为掩模蚀刻底涂层，或者通过以p电极的形式的选择性蚀刻来形成底涂层，并且p电极形成在底漆。

47. 发明授权

US5316956A Method for manufacturing semiconductor light-receiving elements 失效
标题翻译：半导体光接收元件的制造方法
公开(公告)号：US5316956A
公开(公告)日：1994-05-31
申请号：US11747
申请日：1993-02-01
申请人： Takashi Iwasaki , Yasuhiro Iguchi , Naoyuki Yamabayashi
发明人： Takashi Iwasaki , Yasuhiro Iguchi , Naoyuki Yamabayashi
IPC分类号： H01L31/10 , H01L31/18
CPC分类号： H01L31/1844 , Y02E10/544 , Y02P70/521 , Y10S438/938
摘要： A method for manufacturing semiconductor light-receiving elements is provided. The method includes the steps of forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate, forming a p-type layer in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer, and separating the n-InP substrate on which the p-type layer has been formed into semiconductor light-receiving elements.
摘要翻译：提供一种制造半导体光接收元件的方法。该方法包括以下步骤：通过至少将In气体，Ga气体和As气体供应到在n-InP衬底的表面上，在n-InP衬底上形成至少包含In，Ga和As的光接收层的外延层 n-InP衬底，其容纳n-InP衬底的容器的一侧，通过将p型杂质热扩散到光接收层中，形成浮岛的构型的p型层， InP衬底，其中p型层已经形成为半导体光接收元件。

48. 发明授权

US08564666B2 Image pickup device, visibility support apparatus, night vision device, navigation support apparatus, and monitoring device 有权
标题翻译：图像拾取装置，可见度支持装置，夜视装置，导航支援装置和监视装置
公开(公告)号：US08564666B2
公开(公告)日：2013-10-22
申请号：US13548668
申请日：2012-07-13
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H04N7/18
CPC分类号： B82Y20/00 , H01L27/14649 , H01L27/14694 , H01L31/035236
摘要： An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.
摘要翻译：提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散到光接收层的浓度为5×1016 / cm3以下。扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

49. 发明授权

US08120061B2 Light receiving device 有权
标题翻译：光接收装置
公开(公告)号：US08120061B2
公开(公告)日：2012-02-21
申请号：US12522296
申请日：2008-01-07
申请人： Yasuhiro Iguchi , Yuichi Kawamura
发明人： Yasuhiro Iguchi , Yuichi Kawamura
IPC分类号： H01L31/102
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/109 , Y02E10/544
摘要： A light receiving device having small dark current and capable of sensing light in the wavelength range of 2.0 μm to 3.0 μm with high sensitivity is provided. The light receiving device has an InP substrate, and a light receiving layer formed by alternately stacking a larger layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, larger lattice constant than that of InP and thickness between hc and 11hc, the critical thickness hc being determined as hc=b(1−ν cos2α){log(hc/b)+1}/8πf(1+ν)cos λ and a smaller layer formed of GaInNAsSbP mixed crystal having nitrogen content of at most 5% in 5 group, smaller lattice constant than that of InP and thickness between hc and 11hc; absolute value of lattice mismatch of the larger layer and the smaller layer to the InP substrate is at least 0.5% and at most 5%; at least one of the layers has absorption edge wavelength of 2.0 μm to 3.0 μm; total thickness of respective layers is 2.0 μm to 4.0 μm; and thickness-weighted average lattice mismatch is set to be at most ±0.2%.
摘要翻译：提供具有小的暗电流并且能够以高灵敏度感测波长范围为2.0μm至3.0μm的光的光接收装置。光接收装置具有InP基板，并且通过交替堆叠由5组中具有至多5％的氮含量的GaInNAsSbP混合晶体形成的较大层而形成的光接收层，其比InP的晶格常数大，hc和 11hc，临界厚度hc被确定为hc = b（1-＆ngr;cos2α）{log（hc / b）+1} / 8＆pgr; f（1 +＆ngr））cosλ，以及由GaInNAsSbP混合晶体形成的较小层 5组氮含量最多为5％，晶格常数小于InP，hc和11hc之间的厚度较小; 较大层和较小层与InP衬底的晶格失配的绝对值为至少0.5％且至多5％; 所述层中的至少一层的吸收边缘波长为2.0μm〜3.0μm; 各层的总厚度为2.0μm〜4.0μm; 厚度加权平均晶格失配最大为±0.2％。

50. 发明申请

US20100327386A1 PHOTODIODE ARRAY, IMAGE PICKUP DEVICE, AND MANUFACTURING METHOD 有权
标题翻译：光电子阵列，图像拾取器件和制造方法
公开(公告)号：US20100327386A1
公开(公告)日：2010-12-30
申请号：US12494393
申请日：2009-06-30
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/1446 , H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.
摘要翻译：光电二极管阵列包括公共读出控制电路的基板; 以及排列在基板上并且各自包括吸收层的多个光电二极管，以及一对第一导电侧电极和第二导电侧电极。在该光电二极管阵列中，每个光电二极管与相邻的光电二极管隔离，第一导电侧电极设置在第一导电型区域上，并且在所有光电二极管上共同电连接，第二导电侧电极设置在第二导电型电极上导电型区域，并且分别电连接到读出控制电路的读出电极。

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