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41. 发明授权

US06943078B1 Method and structure for reducing leakage current in capacitors 失效
标题翻译：减少电容器漏电流的方法和结构
公开(公告)号：US06943078B1
公开(公告)日：2005-09-13
申请号：US09651998
申请日：2000-08-31
申请人： Lingyi A. Zheng , Er-Xuan Ping
发明人： Lingyi A. Zheng , Er-Xuan Ping
IPC分类号： H01L21/02 , H01L27/08 , H01L27/12 , H01L21/8242
CPC分类号： H01L28/40 , H01L27/0805 , H01L27/12 , H01L28/56 , H01L28/90
摘要： A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The second layer is contacted with hydrogen, oxygen and nitrous oxide gases to form an oxidation layer over the second layer. A third layer of a conductive material is formed over the second layer to thereby form the capacitor. While the capacitor exhibits an improved leakage current reduction, overall capacitance is substantially unaffected, as compared to a similar capacitor having an oxidation layer built from a combination of oxygen and hydrogen gases only.
摘要翻译：阐述了在半导体器件中在衬底上形成具有减小的漏电流的电容器的方法。导电材料的第一层形成在衬底上，并且在第一层上形成电介质的第二层。第二层与氢气，氧气和一氧化二氮气体接触，在第二层上形成氧化层。在第二层上形成第三层导电材料，从而形成电容器。与仅由氧气和氢气的组合构建的氧化层的类似电容器相比，电容器具有改善的漏电流减小，但整体电容基本上不受影响。

42. 发明授权

US06881682B2 Method and structure for reducing leakage current in capacitors 失效
公开(公告)号：US06881682B2
公开(公告)日：2005-04-19
申请号：US10340604
申请日：2003-01-13
申请人： Lingyi A. Zheng , Er-Xuan Ping
发明人： Lingyi A. Zheng , Er-Xuan Ping
IPC分类号： H01L21/02 , H01L27/08 , H01L27/12 , H01L21/461
CPC分类号： H01L28/40 , H01L27/0805 , H01L27/12 , H01L28/56 , H01L28/90
摘要： A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The second layer is contacted with hydrogen, oxygen and nitrous oxide gases to form an oxidation layer over the second layer. A third layer of a conductive material is formed over the second layer to thereby form the capacitor. While the capacitor exhibits an improved leakage current reduction, overall capacitance is substantially unaffected, as compared to a similar capacitor having an oxidation layer built from a combination of oxygen and hydrogen gases only.

43. 发明授权

US06465373B1 Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer 有权
标题翻译：具有DCS（SiH2Cl2）界面接种层的DRAM电容器的超薄TCS（SiCl4）电池氮化物
公开(公告)号：US06465373B1
公开(公告)日：2002-10-15
申请号：US09653523
申请日：2000-08-31
申请人： Lingyi A. Zheng , Er-Xuan Ping
发明人： Lingyi A. Zheng , Er-Xuan Ping
IPC分类号： H01L21469
CPC分类号： H01L21/0217 , C23C16/0272 , C23C16/345 , H01L21/02211 , H01L21/02271 , H01L21/31051 , H01L21/3115 , H01L21/3185 , H01L21/3211 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride seeding layer on the surface, and then exposed to a mixture of silicon tetrachloride (TCS) and a nitrogen comprising gas to deposit a TCS silicon nitride layer on the DCS seeding layer. In another embodiment, the method involves first nitridizing the surface of the silicon-comprising substrate prior to forming the DCS nitride seeding layer and the TCS nitride layer. The method achieves a TCS nitride layer having a sufficient thickness to eliminate bubbling and punch-through problems and provide high electrical performance regardless of the substrate type. Also provided are methods of forming a capacitor, and the resulting capacitor structures.
摘要翻译：提供了一种在半导体器件上形成氮化硅膜的方法。在该方法的一个实施方案中，首先将含硅衬底暴露于二氯硅烷（DCS）和含氮气体的混合物以在表面上沉积薄氮化硅接种层，然后暴露于四氯化硅（TCS）和包含气体的氮气以在DCS籽晶层上沉积TCS氮化硅层。在另一个实施方案中，该方法包括在形成DCS氮化物接种层和TCS氮化物层之前首先氮化含硅衬底的表面。该方法实现了具有足够厚度的TCS氮化物层，以消除起泡和穿通问题，并且不管衬底类型如何，都能提供高电性能。还提供了形成电容器的方法以及所得到的电容器结构。

44. 发明授权

US08013371B2 Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer 有权
标题翻译：具有DCS（SiH2Cl2）界面接种层的DRAM电容器的超薄TCS（SiCl4）电池氮化物
公开(公告)号：US08013371B2
公开(公告)日：2011-09-06
申请号：US10793587
申请日：2004-03-04
申请人： Lingyi A Zheng , Er-Xuan Ping
发明人： Lingyi A Zheng , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L21/318 , H01L23/58
CPC分类号： H01L21/0217 , C23C16/0272 , C23C16/345 , H01L21/02211 , H01L21/02271 , H01L21/31051 , H01L21/3115 , H01L21/3185 , H01L21/3211 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride seeding layer on the surface, and then exposed to a mixture of silicon tetrachloride (TCS) and a nitrogen comprising gas to deposit a TCS silicon nitride layer on the DCS seeding layer. In another embodiment, the method involves first nitridizing the surface of the silicon-comprising substrate prior to forming the DCS nitride seeding layer and the TCS nitride layer. The method achieves a TCS nitride layer having a sufficient thickness to eliminate bubbling and punch-through problems and provide high electrical performance regardless of the substrate type. Also provided are methods of forming a capacitor, and the resulting capacitor structures.
摘要翻译：提供了一种在半导体器件上形成氮化硅膜的方法。在该方法的一个实施方案中，首先将含硅衬底暴露于二氯硅烷（DCS）和含氮气体的混合物以在表面上沉积薄氮化硅接种层，然后暴露于四氯化硅（TCS）和包含气体的氮气以在DCS籽晶层上沉积TCS氮化硅层。在另一个实施方案中，该方法包括在形成DCS氮化物接种层和TCS氮化物层之前首先氮化含硅衬底的表面。该方法实现了具有足够厚度的TCS氮化物层，以消除起泡和穿通问题，并且不管衬底类型如何，都能提供高电性能。还提供了形成电容器的方法以及所得到的电容器结构。

45. 发明授权

US07528435B2 Semiconductor constructions 有权
标题翻译：半导体结构
公开(公告)号：US07528435B2
公开(公告)日：2009-05-05
申请号：US11477958
申请日：2006-06-28
申请人： Lingyi A. Zheng , Er-Xuan Ping
发明人： Lingyi A. Zheng , Er-Xuan Ping
IPC分类号： H01L31/119
CPC分类号： H01L21/02175 , C23C16/34 , H01L21/022 , H01L21/02205 , H01L21/3141 , H01L21/76841 , H01L28/60
摘要： The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material than the other. The portion of the metal nitride nearest the dielectric material is formed from a non-halogenated metal-containing precursor, and the portion of the metal nitride further from the dielectric material is formed from a halogenated metal-containing precursor. The methodology of the present invention can be utilized for forming capacitor constructions, with the portion of the metal nitride formed from the halogenated metal-containing precursor being incorporated into a capacitor electrode.
摘要翻译：本发明包括在电介质材料附近形成金属氮化物的方法。金属氮化物包括两部分，其中一个部分比另一部分更接近电介质材料。最接近介电材料的金属氮化物的部分由非卤化的含金属的前体形成，并且来自电介质材料的金属氮化物的部分由含卤化金属的前体形成。本发明的方法可以用于形成电容器结构，其中由含卤化金属的前体形成的金属氮化物的一部分被并入电容器电极中。

46. 发明授权

US06890818B2 Methods of forming semiconductor capacitors and memory devices 失效
标题翻译：形成半导体电容器和存储器件的方法
公开(公告)号：US06890818B2
公开(公告)日：2005-05-10
申请号：US10338286
申请日：2003-01-08
申请人： Lingyi A. Zheng , Er-Xuan Ping
发明人： Lingyi A. Zheng , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242 , H01L21/20
CPC分类号： H01L27/10855 , H01L28/84 , H01L28/91
摘要： Semiconductor container capacitor structures having a diffusion barrier layer to reduce damage of the bottom cell plate and any underlying transistor from species diffused through the surrounding insulating material are adapted for use in high-density memory arrays. The diffusion barrier layer can protect the bottom cell plate, any underlying access transistor and even the surface of the surrounding insulating layer during processing including pre-treatment, formation and post-treatment of the capacitor dielectric layer. The diffusion barrier layer inhibits or impedes diffusion of species that may cause damage to the bottom plate or an underlying transistor, such as oxygen-containing species, hydrogen-containing species and/or other undesirable species. The diffusion barrier layer is formed separate from the capacitor dielectric layer. This facilitates thinning of the dielectric layer as the dielectric layer need not provide such diffusion protection. Thinning of the dielectric layer in turn facilitates higher capacitance values for a given capacitor surface area.
摘要翻译：具有扩散阻挡层的半导体容器电容器结构适用于高密度存储器阵列中，以减少底部电池板和任何底层晶体管对通过周围绝缘材料扩散的物质的损害。扩散阻挡层可以在包括电容器介电层的预处理，形成和后处理的处理过程中保护底单元板，任何下层存取晶体管，甚至保护周围绝缘层的表面。扩散阻挡层抑制或妨碍可能对底板或下面的晶体管（例如含氧物质，含氢物质和/或其它不期望的物质）造成损害的物质的扩散。扩散阻挡层与电容器介电层分开形成。这有助于介电层的薄化，因为介电层不需要提供这种扩散保护。电介质层的薄化又有助于给定电容器表面积的较高的电容值。

47. 发明授权

US06791113B2 Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer 失效
标题翻译：电容器结构包括在坚固的多晶硅层上的含氮层
公开(公告)号：US06791113B2
公开(公告)日：2004-09-14
申请号：US10414610
申请日：2003-04-15
申请人： Behnam Moradi , Er-Xuan Ping , Lingyi A. Zheng , John Packard
发明人： Behnam Moradi , Er-Xuan Ping , Lingyi A. Zheng , John Packard
IPC分类号： H01L27108
CPC分类号： H01L21/02326 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/3144 , H01L28/40 , H01L28/84 , Y10S438/964
摘要： The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N2O. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer. Additionally, the invention encompasses a capacitor structure. The structure includes a first capacitor electrode comprising a rugged polysilicon layer, a nitrogen-comprising layer on the rugged polysilicon layer, and a second capacitor electrode. The nitrogen-comprising layer is between the first and second capacitor electrodes.
摘要翻译：本发明包括形成电介质材料的方法。在坚固的多晶硅衬底的至少一些表面上形成含氮层以形成介电材料的第一部分。在形成含氮层之后，至少一些基底用NO和N 2 O中的一种或两种进行干式氧化以形成介电材料的第二部分。本发明还包括形成电容器的方法。在衬底上形成一层坚固的硅，并且在坚固的硅层上形成含氮层。一些粗糙的硅通过含氮层露出。在形成含氮层之后，暴露的粗糙硅中的至少一些经受具有NO和N 2 O中的一种或两种的干燥氧化条件。随后，在含氮层上形成导电材料层。另外，本发明包括电容器结构。该结构包括第一电容器电极，其包括坚固的多晶硅层，在凹凸多晶硅层上的含氮层和第二电容器电极。含氮层位于第一和第二电容器电极之间。

48. 发明授权

US06696715B2 Method and structure for reducing leakage current in capacitors 失效
标题翻译：减少电容器漏电流的方法和结构
公开(公告)号：US06696715B2
公开(公告)日：2004-02-24
申请号：US09907681
申请日：2001-07-19
申请人： Lingyi A. Zheng , Er-Xuan Ping
发明人： Lingyi A. Zheng , Er-Xuan Ping
IPC分类号： H01L2972
CPC分类号： H01L28/40 , H01L27/0805 , H01L27/12 , H01L28/56 , H01L28/90
摘要： A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The second layer is contacted with hydrogen, oxygen and nitrous oxide gases to form an oxidation layer over the second layer. A third layer of a conductive material is formed over the second layer to thereby form the capacitor. While the capacitor exhibits an improved leakage current reduction, overall capacitance is substantially unaffected, as compared to a similar capacitor having an oxidation layer built from a combination of oxygen and hydrogen gases only.
摘要翻译：阐述了在半导体器件中在衬底上形成具有减小的漏电流的电容器的方法。导电材料的第一层形成在衬底上，并且在第一层上形成电介质的第二层。第二层与氢气，氧气和一氧化二氮气体接触，以在第二层上形成氧化层。在第二层上形成第三层导电材料，从而形成电容器。与仅由氧气和氢气的组合构建的氧化层的类似电容器相比，电容器具有改善的漏电流减小，但整体电容基本上不受影响。

49. 发明申请

US20060213440A1 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces 审中-公开
公开(公告)号：US20060213440A1
公开(公告)日：2006-09-28
申请号：US11430328
申请日：2006-05-09
申请人： Lingyi Zheng , Trung Doan , Lyle Breiner , Er-Xuan Ping , Kevin Beaman , Ronald Weimer , David Kubista , Cem Basceri
发明人： Lingyi Zheng , Trung Doan , Lyle Breiner , Er-Xuan Ping , Kevin Beaman , Ronald Weimer , David Kubista , Cem Basceri
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/45578 , C23C16/4583
摘要： The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

50. 发明申请

US20060204649A1 Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition 有权
标题翻译：用于在微特征工件加工（例如CVD沉积）期间控制温度的方法和系统
公开(公告)号：US20060204649A1
公开(公告)日：2006-09-14
申请号：US11418337
申请日：2006-05-04
申请人： Kevin Beaman , Trung Doan , Lyle Breiner , Ronald Weimer , Er-Xuan Ping , David Kubista , Cem Basceri , Lingyi Zheng
发明人： Kevin Beaman , Trung Doan , Lyle Breiner , Ronald Weimer , Er-Xuan Ping , David Kubista , Cem Basceri , Lingyi Zheng
IPC分类号： C23C16/00 , C23C16/52
CPC分类号： C23C16/00 , C23C16/46
摘要： The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.
摘要翻译：本公开提供了用于控制温度的方法和系统。该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

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