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41. 发明授权

US08144329B2 Low power RF tuning using optical and non-reflected power methods 有权
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US08144329B2
公开(公告)日：2012-03-27
申请号：US13177442
申请日：2011-07-06
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： G01N21/55
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.
摘要翻译：本发明的方面包括在基板处理系统中控制等离子体的方法。一个实施例提供了在处理第一组一个或多个基板之前控制在腔室内从等离子体反射的反射电磁辐射的第一组波长强度，将第一组反射电磁辐射的波长强度与处理中的RF功率相关联系统，基于反射电磁辐射的第一组波长强度调整匹配电路，处理衬底处理系统中的第一组一个或多个衬底，控制从等离子体反射的反射电磁辐射的第二组波长强度并且将反射的电磁辐射的第二组波长强度与处理系统内的RF功率相关联。

42. 发明授权

US08097088B1 Methods for processing substrates in a dual chamber processing system having shared resources 失效
标题翻译：在具有共享资源的双室处理系统中处理基板的方法
公开(公告)号：US08097088B1
公开(公告)日：2012-01-17
申请号：US13088791
申请日：2011-04-18
申请人： Eu Jin Lim , Adauto Diaz, Jr. , Benjamin Schwarz , James P. Cruse , Charles Hardy
发明人： Eu Jin Lim , Adauto Diaz, Jr. , Benjamin Schwarz , James P. Cruse , Charles Hardy
IPC分类号： B08B5/00
CPC分类号： H01L21/67069 , C23C16/4405 , H01J37/32082 , H01J37/32862 , H01J37/32899 , Y10S134/902 , Y10S438/905
摘要： Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.
摘要翻译：在包括共享资源的第一和第二处理室的双室处理系统中处理衬底的方法可以包括在第一处理室和第二处理室中的每一个中执行第一内室清洁; 并且随后通过以下步骤来处理第一处理室或第二处理室之一中的衬底：将衬底提供到第一处理室或第二处理室中的一个; 向所述第一处理室和所述第二处理室提供处理气体; 仅在其中包含基板的第一处理室或第二处理室中的一个中形成等离子体; 以及通过形成在设置在第一处理室和第二处理室中的相应基板支撑件的表面中的一个或多个通道，在处理基板的同时，向第一处理室和第二处理室提供惰性气体。

43. 发明申请

US20110011743A1 LOW POWER RF TUNING USING OPTICAL AND NON-REFLECTED POWER METHODS 审中-公开
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US20110011743A1
公开(公告)日：2011-01-20
申请号：US12889286
申请日：2010-09-23
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： C25D21/12
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. In one embodiment, an apparatus for monitoring a plasma in a substrate processing system is provided. The apparatus includes a plasma chamber having a plurality of walls, at least one of the plurality of walls having a dielectric ceiling, at least one inner coil element and at least one outer coil element disposed outside the chamber, a current sensor coupled to one of the inner coil element or the outer coil element, the current sensor adapted to detect current from an inductively coupled plasma generated in the plasma chamber, an RF power source, and one or more adjustable capacitors coupled to each of the one or more coil elements.
摘要翻译：本发明的方面包括可以用于通过使用等离子体数据监视组件来监测和调整衬底处理系统中的等离子体的方法和装置。在一个实施例中，提供了一种用于监测衬底处理系统中的等离子体的装置。该装置包括具有多个壁的等离子体室，多个壁中的至少一个壁具有电介质天花板，至少一个内部线圈元件和设置在室外部的至少一个外部线圈元件，耦合到内部线圈元件或外部线圈元件，电流传感器适于检测来自在等离子体室中产生的感应耦合等离子体的电流，RF功率源以及耦合到所述一个或多个线圈元件中的每一个的一个或多个可调电容器。

44. 发明授权

US08473247B2 Methods for monitoring processing equipment 有权
标题翻译：监测加工设备的方法
公开(公告)号：US08473247B2
公开(公告)日：2013-06-25
申请号：US12915260
申请日：2010-10-29
申请人： James P. Cruse , Dermot Cantwell , Michael R. Rice , Thorsten Kril , Charles Hardy
发明人： James P. Cruse , Dermot Cantwell , Michael R. Rice , Thorsten Kril , Charles Hardy
IPC分类号： G04F1/00 , G04F3/00 , G04F5/00 , G04F7/00 , G04F8/00 , G04F10/00 , G04G5/00 , G04G7/00 , G40G15/00
CPC分类号： H01L21/67276
摘要： Methods for monitoring processing equipment are provided herein. In some embodiments, a method for monitoring processing equipment when in an idle state for a period of idle time may include selecting a test from a list of a plurality of tests to perform on the processing equipment when the processing equipment is in the idle state, wherein the test has a total run time; starting the selected test; comparing a remaining idle time of the period of idle time to a remaining run time of the total run time as the selected test is performed; and determining whether to end the selected test prior to completing the total run time in response to the comparison.
摘要翻译：本文提供了监控处理设备的方法。在一些实施例中，一种用于在空闲状态下监视处理设备一段空闲时间的方法可以包括：当处理设备处于空闲状态时，从处理设备执行的多个测试的列表中选择一个测试，其中所述测试具有总运行时间; 开始选择测试; 将执行所选择的测试的空闲时间的剩余空闲时间与总运行时间的剩余运行时间进行比较; 以及响应于所述比较，确定在完成所述总运行时间之前是否结束所选择的测试。

45. 发明申请

US20090272717A1 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：US20090272717A1
公开(公告)日：2009-11-05
申请号：US12407548
申请日：2009-03-19
申请人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
发明人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
IPC分类号： C23F1/00
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

46. 发明申请

US20080003702A1 Low Power RF Tuning Using Optical and Non-Reflected Power Methods 审中-公开
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US20080003702A1
公开(公告)日：2008-01-03
申请号：US11427318
申请日：2006-06-28
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. For example, an optical instrument adapted to measure properties of light over a specific portion of the electromagnetic spectrum may be used to detect one or more wavelength intensities from the plasma. Then, an electronic device, for example a computer software may analyze the wavelength intensities and a match circuit may then be adjusted. In this way, consistent plasma may be obtained. In other embodiments, the present invention may utilize the relationship between chamber pressure, substrate temperature, coil currents and/or the plasma in order to adjust and maintain a repeatable plasma process.
摘要翻译：本发明的方面包括可以用于通过使用等离子体数据监视组件来监测和调整衬底处理系统中的等离子体的方法和装置。例如，可以使用适于测量特定部分电磁光谱的光的光学仪器来检测来自等离子体的一个或多个波长强度。然后，诸如计算机软件的电子设备可以分析波长强度，然后可以调整匹配电路。以这种方式，可以获得一致的等离子体。在其他实施例中，本发明可以利用腔室压力，衬底温度，线圈电流和/或等离子体之间的关系，以便调整和维持可重复的等离子体工艺。

47. 发明授权

US08931512B2 Gas delivery system and method of use thereof 有权
标题翻译：气体输送系统及其使用方法
公开(公告)号：US08931512B2
公开(公告)日：2015-01-13
申请号：US13414217
申请日：2012-03-07
申请人： James P. Cruse , Ezra Robert Gold , John W. Lane
发明人： James P. Cruse , Ezra Robert Gold , John W. Lane
IPC分类号： F16K11/22 , B01F3/02 , G05D11/13
CPC分类号： B01F3/028 , G05D11/132 , Y10T137/0318 , Y10T137/2499 , Y10T137/8326 , Y10T137/87169 , Y10T137/87249 , Y10T137/87281 , Y10T137/87652 , Y10T137/8766 , Y10T137/87684
摘要： Methods and apparatus for delivery of gas are provided herein. In some embodiments, a gas delivery system may include a premix tank having an inlet and an outlet; a plurality of gas supplies coupled to the inlet of the premix tank; a plurality of valves, each valve respectively disposed in line with a corresponding one of the plurality of gas supplies; and a conduit coupling the outlet of the premix tank to one or more gas delivery zones.
摘要翻译：本文提供了用于输送气体的方法和装置。在一些实施例中，气体输送系统可以包括具有入口和出口的预混合罐; 耦合到预混合容器的入口的多个气体供应源; 多个阀，每个阀分别与所述多个气体供应中的相应一个排放成一直线; 以及将预混合箱的出口连接到一个或多个气体输送区的导管。

48. 发明授权

US08454756B2 Methods for extending the lifetime of pressure gauges coupled to substrate process chambers 失效
标题翻译：延长耦合到基板处理室的压力表寿命的方法
公开(公告)号：US08454756B2
公开(公告)日：2013-06-04
申请号：US12905029
申请日：2010-10-14
申请人： James P. Cruse
发明人： James P. Cruse
IPC分类号： B08B9/00 , B08B5/00
CPC分类号： H01L21/67017
摘要： Methods of extending the lifetime of pressure gauges coupled to process chambers are disclosed herein. In some embodiments, the methods may include isolating the pressure gauge from a processing volume of the process chamber, increasing a moisture content of the processing volume to above a desired moisture level while the pressure gauge is isolated from the processing volume of the process chamber, reducing a moisture content of the processing volume to a desired moisture level, wherein the processing volume has a leak rate of about 2 mTorr/min or less at the desired moisture level, and exposing the pressure gauge to the processing volume after reaching the desired moisture level. In some embodiments, the moisture content of the process chamber may be increased by performing a cleaning process in the process chamber or by allowing air to enter the processing volume.
摘要翻译：本文公开了延长耦合到处理室的压力表寿命的方法。在一些实施方案中，所述方法可以包括将压力计与处理室的处理体积隔离，将处理容积的水分含量增加到高于所需水分水平，同时压力计与处理室的处理体积分离，将处理体积的水分含量降低到所需的水分含量，其中处理体积在所需水分含量下具有约2mTorr / min或更小的泄漏速率，并且在达到所需水分后将压力表暴露于处理体积水平。在一些实施例中，可以通过在处理室中执行清洁处理或者允许空气进入处理容积来增加处理室的水分含量。

49. 发明申请

US20110263050A1 LOW POWER RF TUNING USING OPTICAL AND NON-REFLECTED POWER METHODS 有权
标题翻译：使用光学和非反射功率方法的低功率RF调谐
公开(公告)号：US20110263050A1
公开(公告)日：2011-10-27
申请号：US13177442
申请日：2011-07-06
申请人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
发明人： James P. Cruse , Theresa Kramer Guarini , Jeffrey Charles Pierce
IPC分类号： H01L21/66
CPC分类号： H01L21/67069 , H01L21/67253 , H01L22/20
摘要： Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.
摘要翻译：本发明的方面包括在基板处理系统中控制等离子体的方法。一个实施例提供了在处理第一组一个或多个基板之前控制在腔室内从等离子体反射的反射电磁辐射的第一组波长强度，将第一组反射电磁辐射的波长强度与处理中的RF功率相关联系统，基于反射电磁辐射的第一组波长强度调整匹配电路，处理衬底处理系统中的第一组一个或多个衬底，控制从等离子体反射的反射电磁辐射的第二组波长强度并且将反射的电磁辐射的第二组波长强度与处理系统内的RF功率相关联。

50. 发明授权

US07955646B2 Elimination of flow and pressure gradients in low utilization processes 失效
标题翻译：在低利用率过程中消除流量和压力梯度
公开(公告)号：US07955646B2
公开(公告)日：2011-06-07
申请号：US10914964
申请日：2004-08-09
申请人： James P. Cruse , Andreas G. Hegedus , Satheesh Kuppurao
发明人： James P. Cruse , Andreas G. Hegedus , Satheesh Kuppurao
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C8/10 , C23C8/36 , C23C16/24 , C23C16/45557 , C30B25/14 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/28202 , H01L21/28211 , H01L21/28525 , H01L21/3115 , H01L21/3144
摘要： The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.
摘要翻译：扩散到基板中的原子的量可以在低物质利用过程中通过在低物质利用过程中停止气体流入反应室而在低物质利用过程中使薄膜的厚度均匀。停止进入反应室的气体流可能需要关闭闸阀（真空泵的阀），稳定反应室内的压力，并在停止流入室内的气体的同时保持稳定的压力。低物种利用过程包括通过解耦等离子体氮化（DPN）将氮扩散到二氧化硅栅极电介质层中，通过快速热处理（RTP）或化学气相沉积（CVD）沉积二氧化硅膜，以及沉积硅外延层通过CVD。

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