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    • 45. 发明授权
    • Vector processing circuit, command issuance control method, and processor system
    • 矢量处理电路,命令发布控制方法和处理器系统
    • US08874879B2
    • 2014-10-28
    • US13279482
    • 2011-10-24
    • Yi GeYoshimasa TakebeHiromasa Takahashi
    • Yi GeYoshimasa TakebeHiromasa Takahashi
    • G06F9/00G06F9/30G06F9/38
    • G06F9/30014G06F9/30109G06F9/30149G06F9/3836
    • A vector processing circuit includes a vector register file including a plurality of array elements, a command issuance control circuit, and a plurality of pipeline arithmetic units. Each pipeline arithmetic unit performs arithmetic processing of data stored in the array elements indicated as a source by one command in parts through a plurality of cycles and stores the result in the array elements indicated as a destination by the one command through a plurality of cycles. When data word length of a preceding command is longer than that of a subsequent command, the command issuance control circuit changes data sizes of the array elements in accordance with data word length of the command and determines whether there is register interference between the array element to be processed at a non-head cycle of the preceding command, and the array element to be processed at a head cycle of the subsequent command.
    • 矢量处理电路包括包括多个阵列元素的矢量寄存器文件,命令发布控制电路和多个流水线运算单元。 每个流水线运算单元通过多个周期以部分方式,通过一个命令对存储在源表示的数组元素中的数据进行算术处理,并将该结果存储在通过多个周期的一个命令作为目的地表示的数组元素中。 当前一个命令的数据字长度大于后续命令的数据字长时,命令发布控制电路根据命令的数据字长度改变数组元素的数据大小,并确定数组元素与 在前一个命令的非头循环处理,以及要在后续命令的头循环处理的数组元素。
    • 46. 发明授权
    • Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
    • 磁阻效应元件和磁存储器单元以及磁性随机存取存储器
    • US08743593B2
    • 2014-06-03
    • US13133177
    • 2009-11-16
    • Jun HayakawaHiromasa Takahashi
    • Jun HayakawaHiromasa Takahashi
    • G11C11/00
    • H01L27/228B82Y25/00H01F10/16H01F10/3254H01F10/3272H01L43/08
    • Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.
    • 公开了配备有氧化镁钝化层的磁阻效应元件和使用所述元件的高速,超低功耗的非易失性存储器。 提供了由铁磁性自由层,绝缘层和强磁性固定层构成的隧道磁阻效应(TMR)膜,并且在保护层和取向控制层的侧壁上设置MgO钝化层,从而抑制 由于350°以上的热处理,每层的隧道磁阻效应(TMR)元件的元素扩散,并获得具有稳定的高输出读数和低电流写入特性的磁存储单元和磁随机存取存储器。 此外,当在铁磁层中使用CoFeB并且在绝缘层中使用MgO时,优选MgO钝化层具有(001)取向。
    • 48. 发明授权
    • Magnetic read head having a non-magnetic electrode layer and a magnetic read write system
    • 具有非磁性电极层和磁读写系统的磁读头
    • US08139324B2
    • 2012-03-20
    • US11984377
    • 2007-11-16
    • Hiromasa TakahashiMasaki Yamada
    • Hiromasa TakahashiMasaki Yamada
    • G11B5/39
    • G11B5/3903G11B5/398Y10T428/11
    • To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first insulating layer, and a magnetic free layer is formed on a medium-side plane of the non-magnetic electrode layer via a second insulating layer. A circuit for flowing current between the non-magnetic electrode layer and the magnetic pinned layer via the first insulating layer, and a circuit for measuring voltage between the non-magnetic electrode layer and the magnetic free layer are connected to the magnetic free layer. The medium-side plane on which the magnetic free layer is formed may be a plane substantially parallel to the surface of the medium, or may be a plane tilted from the surface of the medium.
    • 提供适合高记录密度磁读写的磁头,噪音小。 经由第一绝缘层在非磁性电极层上形成磁性被钉扎层,经由第二绝缘层在非磁性电极层的中间侧平面上形成无磁性层。 用于经由第一绝缘层在非磁性电极层和磁性被钉扎层之间流动电流的电路和用于测量非磁性电极层和无磁性层之间的电压的电路连接到无磁性层。 形成有磁性层的中间平面可以是基本上平行于介质表面的平面,也可以是从介质表面倾斜的平面。
    • 50. 发明授权
    • Magnetic memory cell and magnetic memory device
    • 磁存储单元和磁存储器件
    • US07688623B2
    • 2010-03-30
    • US11970550
    • 2008-01-08
    • Sadamichi MaekawaSaburo TakahashiHiroshi ImamuraMasahiko IchimuraHiromasa Takahashi
    • Sadamichi MaekawaSaburo TakahashiHiroshi ImamuraMasahiko IchimuraHiromasa Takahashi
    • G11C11/14
    • G11C11/16
    • The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
    • 本发明的目的在于减少存储单元的热量波动,从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。 磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面,并且无磁性端子连接到另一个表面。 第一和第二磁化钉扎端子的磁化方向彼此反平行。 通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性,从而使无磁性端子的磁化反转来进行写入。 通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。