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    • 41. 发明授权
    • Magnetic memory and manufacturing method thereof
    • 磁记忆及其制造方法
    • US07470964B2
    • 2008-12-30
    • US11218490
    • 2005-09-06
    • Keiji Koga
    • Keiji Koga
    • H01L29/78
    • H01L27/228B82Y10/00G11C11/1675
    • A magnetic memory capable of reducing diffusion of ferromagnetic material into semiconductor element area is provided. A magnetic memory 1 includes plural memory areas 3 disposed in two-dimension of m rows and n columns (m, n are integers of 2 or more). The magnetic memory 1 includes semiconductor layer 6 including drain area 32a and source area 32c for write transistor 32, magnetic material layer 8 including TMR element 4 and write wiring 31, and wiring layer 7 including bit wirings 13a and 13b and word wiring 14 being sandwiched between semiconductor layer 6 and magnetic material layer 8. Since wiring layer 7 is sandwiched between magnetic material layer 8 and semiconductor layer 6, the ferromagnetic material diffusing (migrates) from TMR element 4 hardly reaches to semiconductor layer 6. Thus, the diffusion of the ferromagnetic material into the drain area 32a and the source area 32c can be reduced.
    • 提供能够减少铁磁材料向半导体元件区域扩散的磁记忆体。 磁存储器1包括以m行n列(m,n为2以上的整数)的二维配置的多个存储区域3。 磁性存储器1包括半导体层6,其包括漏极区域32a和用于写入晶体管32的源极区域32c,包括TMR元件4和写入布线31的磁性材料层8以及包括位线13a和13b以及字线14的夹层的布线层7 由于布线层7被夹在磁性材料层8和半导体层6之间,所以从TMR元件4扩散(迁移)的铁磁材料难以到达半导体层6。因此,扩散 可以减少进入漏极区域32a和源极区域32c的铁磁材料。
    • 48. 发明授权
    • Magnetic memory
    • 磁记忆
    • US07535757B2
    • 2009-05-19
    • US11905741
    • 2007-10-03
    • Keiji Koga
    • Keiji Koga
    • G11C11/14
    • G11C11/16
    • To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 μm or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.
    • 为了提供能够减少写入电流量的磁存储器,即使当元件尺寸为0.7μm或更小时。 每个存储区域具有用于读/写控制的晶体管,其与每个磁阻效应元件的固定层和自由层中的任一个电连接,电连接到固定层中的另一个的布线 和每个磁阻效应元件的自由层,以及围绕布线并向自由层提供磁场的磁轭,并且每个存储区域内的晶体管数量是一个。
    • 49. 发明申请
    • Magnetic memory
    • 磁记忆
    • US20080094883A1
    • 2008-04-24
    • US11905741
    • 2007-10-03
    • Keiji Koga
    • Keiji Koga
    • G11C11/02
    • G11C11/16
    • To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 μm or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.
    • 为了提供能够减少写入电流量的磁存储器,即使当元件尺寸为0.7μm或更小时。 每个存储区域具有用于读/写控制的晶体管,其与每个磁阻效应元件的固定层和自由层中的任一个电连接,电连接到固定层中的另一个的布线 和每个磁阻效应元件的自由层,以及围绕布线并向自由层提供磁场的磁轭,并且每个存储区域内的晶体管数量是一个。
    • 50. 发明申请
    • Magnetic memory
    • 磁记忆
    • US20070195594A1
    • 2007-08-23
    • US11709053
    • 2007-02-22
    • Keiji Koga
    • Keiji Koga
    • G11C11/14
    • G11C11/16
    • A magnetoresistance effect element is also located between second wiring and common wiring. The magnetoresistance effect element is electrically connected to the second wiring without a spin filter. When a reading current is supplied between the second wiring for supplying a reading current and the common wiring, since this is not supplied via a spin filter, no spin polarized current is supplied into the magnetoresistance effect element, so that it becomes difficult to magnetization-reverse a magnetosensitive layer. Even in a structure where, in order to improve recording density, the magnetosensitive layer is reduced in area so as to lower a writing current, no magnetization reversal occurs due to a supply of the reading current, and information can be read out without making the reading current considerably small in comparison with the writing current.
    • 磁阻效应元件也位于第二布线和公共布线之间。 磁阻效应元件在没有自旋滤波器的情况下电连接到第二布线。 当在用于提供读取电流的第二布线和公共布线之间提供读取电流时,由于不通过自旋滤波器提供,因此不向磁阻效应元件提供自旋极化电流,因此难以磁化 - 反转磁敏层。 即使在为了提高记录密度的结构中,磁感应层的面积减小以便降低写入电流,也不会由于读取电流的提供而发生磁化反转,并且可以读出信息而不使 与写入电流相比,读取电流相当小。