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41. 发明授权

US07532503B2 Magnetic recording element, magnetic recording apparatus and recording method of information 有权
标题翻译：磁记录元件，磁记录装置及信息记录方法
公开(公告)号：US07532503B2
公开(公告)日：2009-05-12
申请号：US11305884
申请日：2005-12-19
申请人： Hirofumi Morise , Shiho Nakamura , Shigeru Haneda , Takahiro Hirai
发明人： Hirofumi Morise , Shiho Nakamura , Shigeru Haneda , Takahiro Hirai
IPC分类号： G11C7/00
CPC分类号： G11C11/16
摘要： A magnetic recording element includes a first fixed layer having a first and second face and having a magnetization direction fixed in a direction penetrating the first and second face. A free layer has a third and fourth face, a magnetization easy and hard axis both extending along the third or fourth face, and a magnetization direction which changes according to a direction of a current flowing through the first and fourth face with a magnetic field applied in a fixed direction or according to a direction of a magnetic field applied to the free layer with a current flowing through the first and fourth face in a fixed direction. A nonmagnetic first intermediate layer is provided between the second and third face. A magnetic field generating layer applies a magnetic field smaller than the anisotropy field of the free layer to the free layer along the magnetization hard axis.
摘要翻译：磁记录元件包括具有第一面和第二面的第一固定层，并且具有沿穿过第一和第二面的方向固定的磁化方向。自由层具有第三和第四面，磁化容易和硬轴都沿着第三或第四面延伸，并且磁化方向根据施加磁场的第一和第四面的电流的方向而变化沿固定方向或根据施加到自由层的磁场的方向，电流以固定方向流过第一和第四面。非磁性第一中间层设置在第二面和第三面之间。磁场产生层沿着磁化硬轴向自由层施加小于自由层的各向异性场的磁场。

42. 发明授权

US07269059B2 Magnetic recording element and device 有权
标题翻译：磁记录元件及装置
公开(公告)号：US07269059B2
公开(公告)日：2007-09-11
申请号：US11147256
申请日：2005-06-08
申请人： Hirofumi Morise , Shiho Nakamura , Shigeru Haneda
发明人： Hirofumi Morise , Shiho Nakamura , Shigeru Haneda
IPC分类号： G11C7/00
CPC分类号： H01F10/3272 , B82Y25/00 , G11B2005/0002 , H01F10/1936 , H01F10/3254 , H01F10/329 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetic recording element, in which a spin-polarized electron is injected, has a layer whose magnetization direction is changed by the spin-polarized electron in accordance with a flow direction of the spin-polarized electron and records data in accordance with the magnetization direction. The magnetic recording element includes a free layer whose magnetization direction is changed by an action of a spin-polarized electron and has a spin polarization Pf. A pinned layer whose magnetization direction is fixed has a spin polarization Pp larger than the spin polarization Pf. An intermediate layer is interposed between the pinned layer and the free layer and consisting essentially of a nonmagnetic material.
摘要翻译：其中注入自旋极化电子的磁记录元件具有根据自旋极化电子的流动方向的磁化方向由自旋极化电子改变的层，并根据磁化方向记录数据。磁记录元件包括其自旋层由自旋极化电子的作用而变化的磁化方向并具有自旋极化Pf的自由层。其磁化方向固定的钉扎层具有大于自旋极化Pf的自旋极化Pp。中间层介于被钉扎层和自由层之间，并且基本上由非磁性材料构成。

43. 发明授权

US07240419B2 Method of manufacturing a magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：US07240419B2
公开(公告)日：2007-07-10
申请号：US10796086
申请日：2004-03-10
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/133
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.
摘要翻译：一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体覆盖掩埋孔的绝缘层的层。孔径可以具有不大于20nm的开口宽度。可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时可以中断针的推压。

44. 发明申请

US20070064342A1 Magnetic element 失效
标题翻译：磁性元件
公开(公告)号：US20070064342A1
公开(公告)日：2007-03-22
申请号：US11390475
申请日：2006-03-28
申请人： Shiho Nakamura , Hirofumi Morise , Shigeru Haneda
发明人： Shiho Nakamura , Hirofumi Morise , Shigeru Haneda
IPC分类号： G11B5/23
CPC分类号： H01F10/3268 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/329 , H01L29/66984 , H01L43/08 , Y10S977/933
摘要： A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode, a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer, a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode, a first electrode which is connected to the first magnetic electrode, and a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
摘要翻译：磁性元件包括沟道层，与沟道层接触的第一磁电极，与沟道层接触并与第一磁极绝缘的第二磁极，邻近设置的第一中间层并且具有第一绝缘层，第一磁性层与第一中间层的与第一磁极接触的表面的相对侧与第一中间层的表面接触以将磁化转移到第一磁极，连接到第一磁极的第一电极和连接到第二磁极的第二电极，第一电极和第二电极中的至少一个输出根据第一电极的磁性排列而变化的第一信号磁极和第二磁极。

45. 发明申请

US20060187705A1 MAGNETIC CELL AND MAGNETIC MEMORY 有权
标题翻译：磁性细胞和磁性记忆
公开(公告)号：US20060187705A1
公开(公告)日：2006-08-24
申请号：US11405418
申请日：2006-04-18
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性单元包括第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

46. 发明申请

US20060132990A1 Magnetic recording element, magnetic recording apparatus and recording method of information 有权
公开(公告)号：US20060132990A1
公开(公告)日：2006-06-22
申请号：US11305884
申请日：2005-12-19
申请人： Hirofumi Morise , Shiho Nakamura , Shigeru Haneda , Takahiro Hirai
发明人： Hirofumi Morise , Shiho Nakamura , Shigeru Haneda , Takahiro Hirai
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11C11/16
摘要： A magnetic recording element includes a first fixed layer having a first and second face and having a magnetization direction fixed in a direction penetrating the first and second face. A free layer has a third and fourth face, a magnetization easy and hard axis both extending along the third or fourth face, and a magnetization direction which changes according to a direction of a current flowing through the first and fourth face with a magnetic field applied in a fixed direction or according to a direction of a magnetic field applied to the free layer with a current flowing through the first and fourth face in a fixed direction. A nonmagnetic first intermediate layer is provided between the second and third face. A magnetic field generating layer applies a magnetic field smaller than the anisotropy field of the free layer to the free layer along the magnetization hard axis.

47. 发明授权

US07042758B2 Magnetic cell and magnetic memory 失效
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07042758B2
公开(公告)日：2006-05-09
申请号：US10943835
申请日：2004-09-20
申请人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
发明人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
IPC分类号： G11C7/00
CPC分类号： G11C11/15
摘要： It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of h > t1 + t2 > 30 30 + L × h where h represents the height of the electrically conductive pillar, t1 represents the thickness of the current diffusion preventing layer, t2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.
摘要翻译：可以提供具有高的MR特性显影速率和降低的波动而不引起元件下落的磁性单元和具有该磁性单元的磁存储器。磁性电池包括：下电极; 形成在下电极上的导电柱; 具有形成在所述导电柱上的至少两个铁磁层和设置在所述铁磁层之间的中间层的磁阻效应膜; 形成在磁阻效应膜上的上电极; 由直接在导电柱的侧面上的至少一个金属或经由绝缘层形成的支撑层; 以及设置在支撑层和下部电极之间的电流扩散防止层，其中导电柱的高度，电流扩散防止层的厚度和支撑层的厚度满足 $h30MN>+Lxh其中h表示导电柱的高度，t 1表示电流扩散防止层的厚度，t 2表示支撑层的厚度，L（nm）表示导电柱的短边。$

48. 发明申请

US20060060901A1 Magnetic recording element and magnetic recording device using the same 有权
标题翻译：磁记录元件及使用其的磁记录装置
公开(公告)号：US20060060901A1
公开(公告)日：2006-03-23
申请号：US11117482
申请日：2005-04-29
申请人： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
发明人： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： A magnetic recording element includes a fixed layer having first and second surfacesm, a recording layer having third and fourth surfaces and being essentially made of a ferromagnetic material having first and second atomic potentials for the majority-spin band electrons and the minority-spin band electrons, a spacer layer being arranged between the fixed and recording layers and being in contact with the second and third surfaces, a cap layer having fifth and sixth surfaces, being essentially made of a nonmagnetic material having a third atomic potential less than an intermediate value between the first and second atomic potentials, and having a thickness of not more than 3 nm, the fifth surface being in contact with the fourth surface, and a reflecting layer being in contact with the sixth surface and being essentially made of a nonmagnetic material having a forth atomic potential different from the third atomic potential.
摘要翻译：磁记录元件包括具有第一表面和第二表面的固定层，具有第三表面和第四表面的记录层，并且主要由具有第一和第二原子电位的铁磁材料制成，用于多数自旋带电子和少数自旋带电子，间隔层布置在固定层和记录层之间并且与第二和第三表面接触，具有第五和第六表面的盖层基本上由非磁性材料制成，其具有小于第三原子电位之间的中间值第一和第二原子电位，并且具有不大于3nm的厚度，第五表面与第四表面接触，反射层与第六表面接触并且基本上由非磁性材料制成，具有第四原子电位与第三原子电位不同。

49. 发明申请

US20060007730A1 Magnetic cell and magnetic memory 有权
公开(公告)号：US20060007730A1
公开(公告)日：2006-01-12
申请号：US11227493
申请日：2005-09-16
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

50. 发明授权

US06956766B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US06956766B2
公开(公告)日：2005-10-18
申请号：US10721549
申请日：2003-11-26
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

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