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    • 42. 发明授权
    • Matching network for RF plasma source
    • RF等离子体源的匹配网络
    • US07298091B2
    • 2007-11-20
    • US10060826
    • 2002-02-01
    • Daniel S. PickardKa-Ngo Leung
    • Daniel S. PickardKa-Ngo Leung
    • H01J7/24
    • H03H7/38H01J2237/31749
    • A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network is formed of a resonantly tuned circuit formed of a variable capacitor and an inductor in a series resonance configuration, and a ferrite core transformer coupled to the resonantly tuned circuit. This matching network is compact enough to fit in existing compact focused ion beam systems.
    • 紧凑型匹配网络将RF电源耦合到等离子体发生器中的RF天线。 简单紧凑的阻抗匹配网络将等离子体负载与射频放大器的同轴传输线的阻抗和射频放大器的输出阻抗相匹配。 匹配网络由串联谐振配置的可变电容器和电感器形成的谐振调谐电路和耦合到谐振调谐电路的铁氧体磁芯变压器构成。 这种匹配网络足够紧凑,可以适应现有的紧凑型聚焦离子束系统。
    • 43. 发明授权
    • Spherical neutron generator
    • 球形中子发生器
    • US07139349B2
    • 2006-11-21
    • US10100955
    • 2002-03-18
    • Ka-Ngo Leung
    • Ka-Ngo Leung
    • G21B1/00
    • G21B3/00Y02E30/18
    • A spherical neutron generator is formed with a small spherical target and a spherical shell RF-driven plasma ion source surrounding the target. A deuterium (or deuterium and tritium) ion plasma is produced by RF excitation in the plasma ion source using an RF antenna. The plasma generation region is a spherical shell between an outer chamber and an inner extraction electrode. A spherical neutron generating target is at the center of the chamber and is biased negatively with respect to the extraction electrode which contains many holes. Ions passing through the holes in the extraction electrode are focused onto the target which produces neutrons by D-D or D-T reactions.
    • 一个球形中子发生器形成有一个小的球形靶和一个围绕靶的球壳射频等离子体离子源。 使用RF天线在等离子体离子源中通过RF激发产生氘(或氘和氚)离子等离子体。 等离子体产生区域是外部室和内部提取电极之间的球形壳体。 球形中子产生靶位于室的中心,并且相对于包含许多孔的引出电极被负偏压。 通过引出电极中的孔的离子被聚焦到通过D-D或D-T反应产生中子的靶上。
    • 44. 发明授权
    • Ultra-short ion and neutron pulse production
    • 超短离子和中子脉冲生产
    • US06985553B2
    • 2006-01-10
    • US10350573
    • 2003-01-23
    • Ka-Ngo LeungWilliam A. BarlettaJoe W. Kwan
    • Ka-Ngo LeungWilliam A. BarlettaJoe W. Kwan
    • G21G1/06
    • H01J27/16
    • An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 μs or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.
    • 离子源具有被配置为产生超短离子脉冲的提取系统,即具有大约1微米或更小的脉冲宽度的脉冲,并且基于离子源的中子源产生相应的超短中子脉冲。 为了形成中子源,中子产生靶被定位成从离子源接收加速的提取的离子束。 为了产生超短离子或中子脉冲,离子源的提取系统中的孔适当地设定尺寸以防止离子泄漏,电极适当间隔开,并且控制提取电压。 通过在提取电极上施加适当电压的超短电压脉冲来调节离开源极的离子束电流。
    • 45. 发明授权
    • Ion source with external RF antenna
    • 带外部射频天线的离子源
    • US06975072B2
    • 2005-12-13
    • US10443575
    • 2003-05-22
    • Ka-Ngo LeungQing JiStephen Wilde
    • Ka-Ngo LeungQing JiStephen Wilde
    • H01J27/18H05H1/46H01J7/24C23C16/00
    • H01J27/18H01J2237/0815H05H1/46
    • A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source.
    • 射频(RF)驱动的等离子体离子源具有外部RF天线,即RF天线位于等离子体发生室的外部而不是内部。 RF天线通常由涂覆有绝缘体的小直径金属管形成。 外部RF天线组件用于将外部RF天线安装到离子源。 RF天线管缠绕在外部RF天线组件上以形成线圈。 外部RF天线组件由材料形成。 石英,其基本上对RF波是透明的。 外部RF天线组件附接并形成等离子体源室的一部分,使得由RF天线发射的RF波进入等离子体室的内部并电离其中所含的气体。 等离子体离子源通常是多尖点离子源。
    • 46. 发明授权
    • Porcelain-coated antenna for radio-frequency driven plasma source
    • 用于射频驱动等离子体源的陶瓷天线
    • US5587226A
    • 1996-12-24
    • US10108
    • 1993-01-28
    • Ka-Ngo LeungRussell P. WellsGlen E. Craven
    • Ka-Ngo LeungRussell P. WellsGlen E. Craven
    • H05H1/46B32B9/00
    • H05H1/46Y10T428/24926Y10T428/31714
    • A new porcelain-enamel coated antenna creates a clean plasma for volume or surface-conversion ion sources. The porcelain-enamel coating is hard, electrically insulating, long lasting, non fragile, and resistant to puncture by high energy ions in the plasma. Plasma and ion production using the porcelain enamel coated antenna is uncontaminated with filament or extraneous metal ion because the porcelain does not evaporate and is not sputtered into the plasma during operation.Ion beams produced using the new porcelain-enamel coated antenna are useful in ion implantation, high energy accelerators, negative, positive, or neutral beam applications, fusion, and treatment of chemical or radioactive waste for disposal. For ion implantation, the appropriate species ion beam generated with the inventive antenna will penetrate large or small, irregularly shaped conducting objects with a narrow implantation profile.
    • 一种新的瓷釉涂层天线为体积或表面转换离子源创造了一个干净的等离子体。 瓷搪瓷涂层硬质,电绝缘,持久耐用,不易碎,耐高压离子等离子体刺穿。 使用瓷釉涂层天线的等离子体和离子生产不受细丝或外来金属离子污染,因为瓷器在操作期间不蒸发并且不溅射到等离子体中。 使用新的瓷搪瓷涂层天线产生的离子束可用于离子注入,高能量加速器,负极,正极或中性束应用,熔化和处理化学或放射性废物进行处置。 对于离子注入,用本发明的天线产生的合适的物质离子束将穿透具有窄注入轮廓的大或小的不规则形状的导电物体。
    • 47. 发明授权
    • Selective ion source
    • 选择离子源
    • US5517084A
    • 1996-05-14
    • US280273
    • 1994-07-26
    • Ka-Ngo Leung
    • Ka-Ngo Leung
    • H01J27/18H05H1/46
    • H01J27/18H05H1/46H01J2237/08H01J2237/31701
    • A ion source is described wherein selected ions maybe extracted to the exclusion of unwanted ion species of higher ionization potential. Also described is a method of producing selected ions from a compound, such as P.sup.+ from PH.sub.3. The invention comprises a plasma chamber, an electron source, a means for introducing a gas to be ionized by electrons from the electron source, means for limiting electron energy from the electron source to a value between the ionization energy of the selected ion species and the greater ionization energy of an unwanted ion specie, and means for extracting the target ion specie from the plasma chamber. In one embodiment, the electrons are generated in a plasma cathode chamber immediately adjacent to the plasma chamber. A small extractor draws the electrons from the plasma cathode chamber into the relatively positive plasma chamber. The energy of the electrons extracted in this manner is easily controlled. The invention is particularly useful for doping silicon with P.sup.+, AS.sup.+, and B.sup.+ without the problematic presence of hydrogen, helium, water, or carbon oxide ions. Doped silicon is important for manufacture of semiconductors and semiconductor devices.
    • 描述了离子源,其中选择的离子可以被提取以排除具有较高电离电位的不需要的离子种类。 还描述了从化合物(例如PH 3中的P +)产生选定离子的方法。 本发明包括等离子体室,电子源,用于引入由电子源电子离子化的气体的装置,用于将来自电子源的电子能量限制到所选离子物质的离子化能和 不需要的离子物质的更大的电离能,以及用于从等离子体室提取目标离子物质的装置。 在一个实施例中,电子在紧邻等离子体室的等离子体阴极室中产生。 小提取器将电子从等离子体阴极室吸入相对正的等离子体室。 以这种方式提取的电子的能量容易控制。 本发明特别适用于用P +,AS +和B +掺杂硅,而没有氢,氦,水或碳氧化物离子存在问题。 掺杂硅对半导体和半导体器件的制造很重要。
    • 48. 发明授权
    • Method and source for producing a high concentration of positively
charged molecular hydrogen or deuterium ions
    • 用于产生高浓度带正电荷的分子氢或氘离子的方法和来源
    • US4793961A
    • 1988-12-27
    • US517476
    • 1983-07-26
    • Kenneth W. EhlersKa-Ngo Leung
    • Kenneth W. EhlersKa-Ngo Leung
    • H01J27/14G21B1/00H05H1/00
    • H01J27/14
    • A high concentration of positive molecular ions of hydrogen or deuterium gas is extracted from a positive ion source having a short path length of extracted ions, relative to the mean free path of the gas molecules, to minimize the production of other ion species by collision between the positive ions and gas molecules. The ion source has arrays of permanent magnets to produce a multi-cusp magnetic field in regions remote from the plasma grid and the electron emitters, for largely confining the plasma to the space therebetween. The ion source has a chamber which is short in length, relative to its transverse dimensions, and the electron emitters are at an even shorter distance from the plasma grid, which contains one or more extraction apertures.
    • 相对于气体分子的平均自由程,从具有提取的离子的短路径长度的正离子源提取高浓度的氢或氘气的正分子离子,以通过相互之间的碰撞来最小化其它离子种类的产生 正离子和气体分子。 离子源具有永磁体阵列,以在远离等离子体栅格和电子发射体的区域中产生多尖点磁场,用于将等离子体大部分限制在其间的空间。 离子源具有相对于其横向尺寸的长度短的室,并且电子发射体与包含一个或多个提取孔的等离子体格栅的距离更短。
    • 49. 发明授权
    • Electron emitting filaments for electron discharge devices
    • 用于电子放电装置的电子发射丝
    • US4760306A
    • 1988-07-26
    • US503373
    • 1983-06-10
    • Ka-Ngo LeungPhilip A. PincosyKenneth W. Ehlers
    • Ka-Ngo LeungPhilip A. PincosyKenneth W. Ehlers
    • H01J1/15H01J9/04H01J19/08
    • H01J9/04H01J1/15
    • Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.
    • 电子被包括由六硼化镧制成的环形灯丝的装置大量发射。 通过连接到灯丝的端子腿的电源,沿着灯丝产生的电流直接加热灯丝。 为了生产细丝,使用金刚石锯等来从六硼化镧棒制成切片。 然后将金刚石锯切成切割成环形的形状,其可以是大致矩形的,U形的,发夹形的,之字形的或大致圆形的。 长丝在相对较低的工作温度(例如1600℃)下提供高电子发射。为了均匀加热,灯丝形成有横截面,该横截面在灯丝的相对端之间是锥形的,以补偿不均匀的电流分布 由于从灯丝发射电子而沿着灯丝。