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41. 发明授权

US09239398B2 Method of generating and combining multiple horizons to determine a seismic horizon and its uncertainty 有权
标题翻译：生成和组合多个视野以确定地震范围及其不确定性的方法
公开(公告)号：US09239398B2
公开(公告)日：2016-01-19
申请号：US13651204
申请日：2012-10-12
申请人： Chul-Sung Kim , Mark W. Dobin
发明人： Chul-Sung Kim , Mark W. Dobin
IPC分类号： G01V1/30
CPC分类号： G01V1/301 , G01V2210/643
摘要： There is provided a system and method for creating model of a subsurface region based on multiple depth values. The method includes selecting seeds that represent a starting location within a desired horizon surfaces and generating a plurality of candidate horizons from the selected seeds. A number of depth values from the candidate horizons may be combined into a representative depth value and an uncertainty may be computed based on discrepancies among the depth values. A model of the subsurface region may be created using the depth values and the uncertainty.
摘要翻译：提供了一种基于多个深度值来创建地下区域模型的系统和方法。该方法包括选择表示期望的水平表面内的开始位置的种子，并从所选择的种子生成多个候选水平面。来自候选视野的多个深度值可以被组合成代表性的深度值，并且可以基于深度值之间的差异来计算不确定性。可以使用深度值和不确定性来创建地下区域的模型。

42. 发明授权

US08598024B2 Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method 有权
标题翻译：金属硅化物层的制造方法，使用其的半导体器件的制造方法以及使用该方法制造的半导体器件
公开(公告)号：US08598024B2
公开(公告)日：2013-12-03
申请号：US13239521
申请日：2011-09-22
申请人： Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
发明人： Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
IPC分类号： H01L21/425
CPC分类号： H01L29/7833 , H01L21/28506 , H01L21/28518 , H01L21/823814 , H01L29/456 , H01L29/6659
摘要： A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
摘要翻译：制造金属硅化物层的方法包括在基板上形成金属层，并且通过在基板上进行第一退火处理使基板与金属层反应来形成预金属硅化物层。该方法还包括使用气体簇离子束（GCIB）工艺将硅注入到衬底中，并且通过在衬底上执行第二退火工艺将前金属硅化物层改变为金属硅化物层。

43. 发明授权

US08365831B2 Determining connectivity architecture in 2-D and 3-D heterogeneous data 有权
标题翻译：确定2-D和3-D异构数据中的连接体系结构
公开(公告)号：US08365831B2
公开(公告)日：2013-02-05
申请号：US12679641
申请日：2008-11-13
申请人： Chul-Sung Kim , Mark W. Dobin
发明人： Chul-Sung Kim , Mark W. Dobin
IPC分类号： E21B43/00
CPC分类号： G01V1/32 , E21B43/00 , E21B49/00 , G01V1/302 , G01V2210/641 , G01V2210/644
摘要： A method is disclosed for determining the connectivity architecture of a hydrocarbon reservoir in terms of locally optimal paths between selected source points, e.g. wells. In one embodiment of the invention, a fast-marching method (133) is used to compute the distance field (or the time of arrival field) from N selected source points in a heterogeneous media, i.e. in a non-uniform velocity field. This is done by propagating N labeled (132) fronts simultaneously from N objects. Then, a method (134) is disclosed for detecting Voronoi curves or Voronoi surfaces, where fronts of differing labels meet each other. Then, saddle points are found on the Voronoi curves or surfaces (135), and each saddle point is used to determine a locally optimal path (136) between a pair of equidistant (from the saddle point), closest (to the saddle point) source points.
摘要翻译：公开了一种用于根据选定的源点之间的局部最佳路径来确定烃储层的连通性结构的方法，例如，井。在本发明的一个实施例中，快速行进方法（133）用于从非均匀介质中的N个选择的源点，即在非均匀速度场中计算距离场（或到达场的时间）。这通过从N个对象同时传播N个标记的（132）前端来完成。然后，公开了一种用于检测不同标签的前面彼此相遇的Voronoi曲线或Voronoi曲面的方法（134）。然后，在Voronoi曲线或表面（135）上找到鞍点，并且使用每个鞍点来确定最接近（相对于鞍座点）的一对等距（从鞍点）的局部最佳路径（136）来源点。

44. 发明申请

US20120083089A1 FABRICATING METHOD OF METAL SILICIDE LAYER, FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE FABRICATED USING THE METHOD 有权
标题翻译：金属硅化物层的制造方法，使用其的半导体器件的制造方法和使用该方法制造的半导体器件
公开(公告)号：US20120083089A1
公开(公告)日：2012-04-05
申请号：US13239521
申请日：2011-09-22
申请人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
发明人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
IPC分类号： H01L21/28 , H01L21/22
CPC分类号： H01L29/7833 , H01L21/28506 , H01L21/28518 , H01L21/823814 , H01L29/456 , H01L29/6659
摘要： A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
摘要翻译：制造金属硅化物层的方法包括在基板上形成金属层，并且通过在基板上进行第一退火处理使基板与金属层反应来形成预金属硅化物层。该方法还包括使用气体簇离子束（GCIB）工艺将硅注入到衬底中，并且通过在衬底上执行第二退火工艺将前金属硅化物层改变为金属硅化物层。

45. 发明申请

US20100270027A1 Method For Determining Distinct Alternative Paths Between Two Object Sets In 2-D and 3-D Heterogeneous Data 审中-公开
标题翻译：用于确定2-D和3-D异构数据中两个对象集之间的不同替代路径的方法
公开(公告)号：US20100270027A1
公开(公告)日：2010-10-28
申请号：US12747778
申请日：2009-01-21
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： E21B43/00 , G06G7/48
CPC分类号： G01V99/00 , G01V1/302 , G01V99/005 , G01V2210/641 , G01V2210/644
摘要： Distinct paths (40), e.g., locally optimal, are determined in a heterogeneous velocity field (32) between a source object and a target object (33) using gradients (35) of a two-way total arrival time field (34). The foregoing technique may be used to assess hydrocarbon reservoir connectivity.
摘要翻译：使用双向总到达时间字段（34）的梯度（35）在源对象和目标对象（33）之间的异质速度场（32）中确定不同路径（40），例如局部最佳。上述技术可用于评估烃储层连通性。

46. 发明授权

US07565243B2 Rapid method for reservoir connectivity analysis using a fast marching method 有权
标题翻译：使用快速行进方法进行油藏连通分析的快速方法
公开(公告)号：US07565243B2
公开(公告)日：2009-07-21
申请号：US11884695
申请日：2006-04-10
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： G06F3/00
CPC分类号： G01V99/005 , E21B43/00 , G01V1/302 , G01V2210/641 , G01V2210/644
摘要： Methods for analyzing the connected quality of a hydrocarbon reservoir are disclosed. A model of a portion of the reservoir is divided into cells, each cell having a volume and some attributes, and wherein a speed function is assigned to a portion of the cells. A reference cell is chosen. A connectivity between cells in the reservoir is determined by solving an Eikonal equation that describes the travel time propagation, said propagating front progressing outward from a reference cell until an ending condition is met, said Eikonal equation being solved by a fast marching method with propagation velocity as a function of spatial position being provided by the speed function. Regions of the reservoir are characterized by their connective quality to the reference cell using the connectivity.
摘要翻译：公开了分析烃储层连通质量的方法。储存器的一部分的模型被分成单元，每个单元具有一个体积和一些属性，并且其中一个速度函数被分配给该单元的一部分。选择参考单元。通过解决描述旅行时间传播的Eikonal方程来确定储层中的细胞之间的连通性，所述传播前沿从参考细胞向外进展直到满足结束条件，所述Eikonal方程通过具有传播速度的快速行进方法作为由速度函数提供的空间位置的函数。水库的区域的特点是使用连接性与参考单元的连接质量。

47. 发明授权

US06963094B2 Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region 有权
标题翻译：具有漏极穿通阻挡区域的金属氧化物半导体晶体管和用于制造具有漏极穿通阻挡区域的金属氧化物半导体晶体管的方法
公开(公告)号：US06963094B2
公开(公告)日：2005-11-08
申请号：US10394338
申请日：2003-03-21
申请人： Byeong-Chan Lee , Si-Young Choi , Chul-Sung Kim , Jong-Ryeol Yoo , Deok-Hyung Lee
发明人： Byeong-Chan Lee , Si-Young Choi , Chul-Sung Kim , Jong-Ryeol Yoo , Deok-Hyung Lee
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8242 , H01L27/108 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/76
CPC分类号： H01L29/0847 , H01L21/823425 , H01L27/10817 , H01L27/10873 , H01L27/10885 , H01L29/0653 , H01L29/1054 , H01L29/41766 , H01L29/66636 , H01L29/66651 , H01L29/66659
摘要： Metal oxide semiconductor transistors and devices with such transistors and methods of fabricating such transistors and devices are provided. Such transistors may have a silicon well region having a first surface and having spaced apart source and drain regions therein. A gate insulator is provided on the first surface of the silicon well region and disposed between the source and drain regions and a gate electrode is provided on the gate insulator. A region of insulating material is disposed between a first surface of the drain region and the silicon well region. The region of insulating material extends toward but not to the source region. A source electrode is provided that contacts the source region. A drain electrode contacts the drain region and the region of insulating material.
摘要翻译：提供了具有这种晶体管的金属氧化物半导体晶体管和器件以及制造这种晶体管和器件的方法。这种晶体管可以具有硅阱区，其具有第一表面并且在其中具有间隔开的源极和漏极区。栅极绝缘体设置在硅阱区的第一表面上并且设置在源极和漏极区之间，并且栅极被设置在栅极绝缘体上。绝缘材料的区域设置在漏极区域的第一表面和硅阱区域之间。绝缘材料的区域朝向但不延伸到源极区域。提供接触源区的源电极。漏电极接触漏极区域和绝缘材料区域。

48. 发明授权

US06835996B2 Method and device for forming an STI type isolation in a semiconductor device 失效
标题翻译：在半导体器件中形成STI型隔离的方法和装置
公开(公告)号：US06835996B2
公开(公告)日：2004-12-28
申请号：US10684451
申请日：2003-10-15
申请人： Chul-Sung Kim , Si-Young Choi , Jung-Woo Park , Jong-Ryol Ryu , Byeong-Chan Lee
发明人： Chul-Sung Kim , Si-Young Choi , Jung-Woo Park , Jong-Ryol Ryu , Byeong-Chan Lee
IPC分类号： H01L2900
CPC分类号： H01L21/76224
摘要： A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
摘要翻译：半导体器件中的沟槽隔离及其制造方法包括：在硅衬底中形成具有用于器件隔离的内侧壁的沟槽; 在形成沟槽的内侧壁的硅衬底的表面上形成氧化物层; 向硅衬底提供愈合元件以去除悬挂键; 并用器件隔离层填充沟槽，从而形成沟槽隔离，而不产生悬挂键导致电荷陷阱。

49. 发明授权

US06329276B1 Method of forming self-aligned silicide in semiconductor device 有权
标题翻译：在半导体器件中形成自对准硅化物的方法
公开(公告)号：US06329276B1
公开(公告)日：2001-12-11
申请号：US09392470
申请日：1999-09-09
申请人： Ja-Hum Ku , Soo-Geun Lee , Chul-Sung Kim , Tae-Wook Seo , Eung-Joon Lee , Joo-Hyuk Chung
发明人： Ja-Hum Ku , Soo-Geun Lee , Chul-Sung Kim , Tae-Wook Seo , Eung-Joon Lee , Joo-Hyuk Chung
IPC分类号： H01L213205
CPC分类号： H01L29/665 , H01L21/28518
摘要： There is provided a semiconductor device fabrication method. In the method, a gate layer is formed on a semiconductor substrate and patterned to form a first resultant structure, a metal layer is formed on the first resultant structure, a capping layer is formed on the metal layer, a metal silicide is formed on the gate layer by heating the substrate at a first temperature, unreacted metal layer and first capping layer are removed to form a second resultant structure, a second capping layer is formed on the second resultant structure, and the substrate is heated at a second temperature higher than the first temperature. The second capping layer suppresses a silicidation rate in the secondary heat treatment, thereby allowing a silicide of a good morphology to be achieved.
摘要翻译：提供了半导体器件制造方法。在该方法中，在半导体衬底上形成栅极层并形成第一结构，在第一结果结构上形成金属层，在金属层上形成覆盖层，在金属层上形成金属硅化物通过在第一温度下加热衬底，去除未反应的金属层和第一覆盖层以形成第二结构结构，在第二结构结构上形成第二覆盖层，并且将衬底在高于第一个温度。第二覆盖层抑制二次热处理中的硅化率，从而实现良好形态的硅化物。

50. 发明授权

US6140643A Method for identification of unknown substances 失效
标题翻译：未知物质鉴别方法
公开(公告)号：US6140643A
公开(公告)日：2000-10-31
申请号：US265446
申请日：1999-03-09
申请人： Roy W. Brown , Chul-Sung Kim
发明人： Roy W. Brown , Chul-Sung Kim
IPC分类号： G01N23/06 , G01Q30/04 , G21N23/225
CPC分类号： G01N23/063
摘要： The present invention relates to a method for determining the mineral composition of an unknown material using both a fuzzy classification system and a confidence measure of substances identified by the fuzzy classification system. The method can be adapted for identification of pore space and sample points containing more than one material.
摘要翻译：本发明涉及使用模糊分类系统和由模糊分类系统识别的物质的置信度测量来确定未知材料的矿物组成的方法。该方法可适用于孔隙空间的识别和含有多种材料的样品点。

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