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41. 发明申请

US20110208991A1 MEMORY DEVICE, BOARD, LIQUID CONTAINER, HOST DEVICE, AND SYSTEM 有权
标题翻译：存储设备，板，液体容器，主机设备和系统
公开(公告)号：US20110208991A1
公开(公告)日：2011-08-25
申请号：US13031152
申请日：2011-02-18
申请人： Jun Sato
发明人： Jun Sato
IPC分类号： G06F1/04
CPC分类号： B41J2/17546 , G06K15/102
摘要： A memory device includes a memory unit, a memory control unit that controls an access of the memory unit, a control unit that performs a communication process with a host device, a data terminal, a reset terminal, and a clock terminal. The control unit outputs a response signal for reporting the connection of the memory device to the host device through the data terminal in an m-th clock cycle (m is at least an integer of 1≦m≦n) corresponding to ID information of the memory device among first to n-th clock cycles (n is an integer of 2 or more) of clocks input to the clock terminal.
摘要翻译：存储装置包括存储器单元，控制存储单元访问的存储器控制单元，执行与主机设备，数据终端，复位终端和时钟端子的通信处理的控制单元。控制单元输出响应信号，用于通过数据终端在第m个时钟周期（m为至少1＆nlE; m＆nlE; n的整数1）中通过数据终端报告存储设备的连接。在时钟端子输入的时钟的第1〜第n时钟周期（n为2以上的整数）的存储器件。

42. 发明申请

US20110205589A1 STORAGE DEVICE, SUBSTRATE, LIQUID CONTAINER, HOST DEVICE, AND SYSTEM 审中-公开
标题翻译：存储装置，基板，液体容器，主机装置和系统
公开(公告)号：US20110205589A1
公开(公告)日：2011-08-25
申请号：US13031137
申请日：2011-02-18
申请人： Jun Sato
发明人： Jun Sato
IPC分类号： G06F3/12
CPC分类号： B41J2/17546
摘要： A storage device includes a storage section, a storage control section that controls access of the storage section, a control section that performs a process of communicating with a host device, and first to k-th (k is an integer of 2 or more) terminals. The control section outputs, to the host device, a response signal to give a notification that the corresponding storage device is connected, through an i-th (i is an integer where 1≦i≦k) terminal among the first to k-th terminals. The control section outputs the response signal to the host device in an m-th (m is an integer where 1≦m≦n) output time period, which corresponds to ID information of the corresponding storage device, among first to n-th (n is an integer of 2 or more) output time periods.
摘要翻译：存储装置包括存储部，控制存储部的访问的存储控制部，执行与主机的通信的处理的控制部，第一至第k（k为2以上的整数）终端。控制部分通过第i至第i（i是1和nlE; i＆nlE; k）终端中的整数向主机设备输出响应信号以给出相应的存储设备连接的通知终端。控制部将第1〜第n（m）的m（m为1＆nlE; m＆nlE; n）的输出时间的对应的存储装置的ID信息输出到主装置， n是2以上的整数）输出时间。

43. 发明授权

US07813246B2 Method and apparatus for recording BCA to optical disc using multiple turntables 失效
标题翻译：使用多个转盘将BCA记录到光盘的方法和装置
公开(公告)号：US07813246B2
公开(公告)日：2010-10-12
申请号：US12174409
申请日：2008-07-16
申请人： Shinji Iguchi , Takafumi Ishikawa , Yukihiro Takahata , Jun Sato
发明人： Shinji Iguchi , Takafumi Ishikawa , Yukihiro Takahata , Jun Sato
IPC分类号： G11B11/00
CPC分类号： G11B7/26 , G11B7/00458 , G11B17/226
摘要： The BCA recording and reproducing apparatus performs recording of data onto an optical disc placed on a recording turntable, reproduction of data recorded on an optical disc placed on a reproducing turntable and ejection of an optical disc placed on an exchanging table and placement of a new optical disc on the exchanging table in parallel. A processing time is thereby shortened compared with the case of performing data recording, reproduction and exchange in series.
摘要翻译： BCA记录和再现装置执行数据到放置在记录转盘上的光盘上的记录，记录在放置在再现转盘上的光盘上的数据的再现以及放置在更换台上的光盘的排出以及放置新的光学光盘上的并行交换台。因此与进行数据记录，再现和串联交换的情况相比，缩短了处理时间。

44. 发明授权

US07791504B2 Rotary encoder and method of manufacturing the same 有权
标题翻译：旋转编码器及其制造方法
公开(公告)号：US07791504B2
公开(公告)日：2010-09-07
申请号：US12352745
申请日：2009-01-13
申请人： Jun Sugahara , Jun Sato , Takumi Nishimoto , Kenji Kataoka
发明人： Jun Sugahara , Jun Sato , Takumi Nishimoto , Kenji Kataoka
IPC分类号： H03M1/22
CPC分类号： H01H19/11 , H01H19/20 , H01H19/585 , H01H2019/006
摘要： A rotary encoder includes a case made of insulating resin, a rotatable operation shaft, a slidable brush fixed to the operation shaft, and a signal contact embedded in a surface of the case. The slidable brush has a contacting section slidable on a surface of the case on a predetermined circumference according to a rotation of the operation shaft. The signal contact has an upper surface flush with the surface of the case, a first side surface connected to the upper surface at a first corner having a right angle, a second side surface connected to the upper surface at a second corner having a right angle, and a lower surface opposite to the upper surface. The first and side surfaces are positioned on the predetermined circumference. The lower surface has a width smaller than a width of the upper surface. This rotary encoder has a small size and outputs a signal precisely.
摘要翻译：旋转编码器包括由绝缘树脂制成的壳体，可旋转操作轴，固定到操作轴的可滑动的刷子和嵌入壳体的表面中的信号触点。滑动刷具有接触部，该接触部根据操作轴的旋转而在预定的圆周上在壳体的表面上滑动。信号触点具有与壳体表面齐平的上表面，第一侧表面在第一角部处连接到上表面，具有直角，第二侧表面在第二拐角处连接到具有直角的第二拐角，以及与上表面相对的下表面。第一侧面和侧面定位在预定的圆周上。下表面的宽度小于上表面的宽度。该旋转编码器尺寸小，精确输出信号。

45. 发明授权

US07758920B2 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US07758920B2
公开(公告)日：2010-07-20
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

46. 外观设计

USD606104S1 Electronic camera 有权
公开(公告)号：USD606104S1
公开(公告)日：2009-12-15
申请号：US29326870
申请日：2008-10-27
申请人： Jun Sato
设计人： Jun Sato

47. 发明申请

US20090208109A1 Object Recognition Apparatus 审中-公开
标题翻译：对象识别装置
公开(公告)号：US20090208109A1
公开(公告)日：2009-08-20
申请号：US11884484
申请日：2006-02-22
申请人： Toshiaki Kakinami , Jun Sato
发明人： Toshiaki Kakinami , Jun Sato
IPC分类号： G06K9/46
CPC分类号： G06K9/00812 , B60Q9/004 , G01B21/20 , G01S2013/9314 , G06K9/00805 , G06K9/3241 , G06K2209/23 , G08G1/165 , G08G1/168
摘要： An object recognition apparatus that is capable of consistently recognizing the shape of an object in the periphery of a moving body using a small amount of computation even when data for an extraneous object are introduced, and of calculating the positional relationship of both objects and satisfactorily reporting the positional relationship. The object recognition apparatus for recognizing an object in the periphery of a moving object is configured as described below. The object recognition apparatus comprises object detection means (1) for detecting information about the surface shape of the object; shape recognition means (2) for computing a degree of coincidence of a sample group with respect to a shape model that is determined on the basis of a sample arbitrarily extracted from a sample group composed of information about the surface shape, and recognizing a profile shape of the object; relative positioning computation means (3) for computing a positional relationship between the moving body and the object on the basis of detection and recognition results of the object detection means (1) and the shape recognition means (2); and reporting means (5) for reporting the positional relationship using a sound or a display on the basis of computation results of the relative positioning computation means (3).
摘要翻译：一种物体识别装置，即使在引入了外部物体的数据时，也能够使用少量的计算能够一致地识别移动体的周围的物体的形状，并且计算出两个物体的位置关系和令人满意的报告位置关系。用于识别移动物体的周边中的物体的物体识别装置被配置如下。物体识别装置包括用于检测关于物体的表面形状的信息的物体检测装置（1）形状识别装置（2），用于计算样本组相对于基于从由关于表面形状的信息组成的样本组任意提取的样本确定的形状模型的一致程度，以及识别轮廓形状的对象; 基于物体检测装置（1）和形状识别装置（2）的检测和识别结果，计算移动体和物体之间的位置关系的相对定位计算装置（3）。以及基于相对定位计算装置（3）的计算结果，使用声音或显示来报告位置关系的报告装置（5）。

48. 发明申请

US20090181548A1 VERTICAL PLASMA PROCESSING APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS 有权
标题翻译：垂直等离子体处理装置和半导体工艺方法
公开(公告)号：US20090181548A1
公开(公告)日：2009-07-16
申请号：US12411123
申请日：2009-03-25
申请人： Toshiki Takahashi , Kohei Fukushima , Koichi Orito , Jun Sato
发明人： Toshiki Takahashi , Kohei Fukushima , Koichi Orito , Jun Sato
IPC分类号： H01L21/31
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45536 , C23C16/45546 , C23C16/45574
摘要： A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.
摘要翻译：用于半导体工艺的垂直等离子体处理装置包括处理容器，其具有被配置为在垂直方向上间隔地容纳多个目标基板的处理区域和处理区域外的边缘空间。在处理目标基板时，控制部分同时执行从处理气体供应电路向处理场供应处理气体，并将阻塞气体从封闭气体供应回路供给到边际空间，以阻止处理气体流入边际空间。

49. 发明申请

US20090124083A1 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20090124083A1
公开(公告)日：2009-05-14
申请号：US12285575
申请日：2008-10-08
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： H01L21/306
CPC分类号： C23C16/345 , C23C16/0218 , C23C16/4405 , C23C16/452 , C23C16/45542 , H01J37/32082 , H01J37/3244 , H01J37/32522
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
摘要翻译：在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜反应室和第一喷嘴，处于反应室不容纳目标基板的状态。清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序从反应室内供给清洗反应气体和排气。蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

50. 发明申请

US20090117743A1 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20090117743A1
公开(公告)日：2009-05-07
申请号：US12285513
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Masanobu Matsunaga , Kazuhide Hasebe
IPC分类号： H01L21/461 , C23C16/452 , H01L21/311
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4405 , C23C16/45519
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.
摘要翻译：使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体基质。蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

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