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41. 发明授权

US08426088B2 Method for a lithographic apparatus 失效
标题翻译：光刻设备的方法
公开(公告)号：US08426088B2
公开(公告)日：2013-04-23
申请号：US13446811
申请日：2012-04-13
申请人： Laurentius Cornelius De Winter , Jozef Maria Finders
发明人： Laurentius Cornelius De Winter , Jozef Maria Finders
IPC分类号： G03F1/26
CPC分类号： G03B27/42 , G03F7/70308
摘要： A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.
摘要翻译：公开了增加光刻设备的焦深的方法。该方法包括使用图案形成装置图案形成衍射的辐射束; 以及将衍射光束的一部分的相位波前变换为具有用于所述光刻设备的第一焦平面的第一相位波前，以及具有第二不同焦平面的第二相位波前，其中所述变换包括：对将第一衍射光束的第一部分的相位和第二衍射光束的对应的第一部分的相位相位改变为导致第一相位波段的至少部分形成，并且使第二部分的相位并且所述第二衍射光束的对应的第二部分的相位变为导致第二相位波前的至少部分形成的相位变化。

42. 发明授权

US08142964B2 Method of designing sets of mask patterns, sets of mask patterns, and device manufacturing method 有权
标题翻译：设计掩模图案集，掩模图案集和器件制造方法的方法
公开(公告)号：US08142964B2
公开(公告)日：2012-03-27
申请号：US12499519
申请日：2009-07-08
申请人： Sander De Putter , Jozef Maria Finders , Bertus Johan Vleeming
发明人： Sander De Putter , Jozef Maria Finders , Bertus Johan Vleeming
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/0035 , G03F1/36 , G03F7/203 , G03F7/70283 , G03F7/70341 , G03F7/70433 , G03F7/70441 , G03F7/70466
摘要： In a multiple-exposure lithographic process a developed resist pattern derived from a first exposure is present within a second resist layer that is exposed in a second exposure of the multiple-exposure lithographic process. The second mask pattern used in the second exposure process includes at least one localized adjustment to at least one feature thereof to compensate for scattering effects of the developed resist pattern that is present when the second exposure is performed.
摘要翻译：在多曝光光刻工艺中，从第一曝光得到的显影抗蚀剂图案存在于在多次曝光光刻工艺的第二次曝光中曝光的第二抗蚀剂层内。在第二曝光过程中使用的第二掩模图案包括对至少一个特征的至少一个局部调整，以补偿当执行第二曝光时存在的显影抗蚀剂图案的散射效应。

43. 发明授权

US07961296B2 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US07961296B2
公开(公告)日：2011-06-14
申请号：US12476044
申请日：2009-06-01
申请人： Jozef Maria Finders
发明人： Jozef Maria Finders
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70891 , G03F7/70258 , G03F7/70308
摘要： A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into zeroth-order and first-order diffracted beams oppositely and asymmetrically inclined with respect to an optical axis. An area is identified where the first-order diffracted beam traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of the first-order diffracted beam in relation to the optical phase of the zeroth-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.
摘要翻译：光刻设备包括相位调节器，用于在曝光基板上的图案时调节穿过相位调节器的光学元件的光波的相位。在一个实施例中，光学元件是光刻设备的投影系统中的热可控光学元件。在使用中，用包括离轴辐射束的照明模式照亮图案。该光束被衍射成相对于光轴相对和不对称倾斜的零级和一级衍射光束。识别出一级衍射光束穿过光学元件的区域。通过相对于零级衍射光束的光学相位计算一级衍射光束的期望的光学相位来优化图案的图像的图像特性。控制相位调节器以将期望的光学相位施加到一阶衍射光束。

44. 发明授权

US07732110B2 Method for exposing a substrate and lithographic projection apparatus 有权
标题翻译：曝光基板和光刻投影装置的方法
公开(公告)号：US07732110B2
公开(公告)日：2010-06-08
申请号：US12392744
申请日：2009-02-25
申请人： Jozef Maria Finders , Judocus Marie Dominicus Stoeldraijer , Johannes Wilhelmus De Klerk
发明人： Jozef Maria Finders , Judocus Marie Dominicus Stoeldraijer , Johannes Wilhelmus De Klerk
IPC分类号： G03F9/00 , G03B27/52 , G03B27/58
CPC分类号： G03F7/70333 , G03F7/70425
摘要： A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.
摘要翻译：公开了一种用于将基板上的抗蚀剂层暴露于掩模上的图案的图像的方法，其中，在开始曝光之后并且在完成曝光之前，控制器通过控制器在抗蚀剂层的图像中引入受控量的对比度损失在曝光期间改变衬底保持器的位置。对比度损耗影响光刻投影设备的分辨率的音调依赖性，并且其控制用于匹配不同光刻投影设备之间的分辨率的音调依赖性。

45. 发明申请

US20100129742A1 METHOD FOR A LITHOGRAPHIC APPARATUS 失效
标题翻译：一种平面设备的方法
公开(公告)号：US20100129742A1
公开(公告)日：2010-05-27
申请号：US12625063
申请日：2009-11-24
申请人： Laurentius Cornelis DE WINTER , Jozef Maria Finders
发明人： Laurentius Cornelis DE WINTER , Jozef Maria Finders
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03B27/42 , G03F7/70308
摘要： A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.
摘要翻译：公开了增加光刻设备的焦深的方法。该方法包括使用图案形成装置图案形成衍射的辐射束; 以及将衍射光束的一部分的相位波前变换为具有用于所述光刻设备的第一焦平面的第一相位波前，以及具有第二不同焦平面的第二相位波前，其中所述变换包括：对将第一衍射光束的第一部分的相位和第二衍射光束的对应的第一部分的相位相位改变为导致第一相位波段的至少部分形成，并且使第二部分的相位并且所述第二衍射光束的对应的第二部分的相位变为导致第二相位波前的至少部分形成的相位变化。

46. 发明申请

US20100021827A1 Method of Designing Sets of Mask Patterns, Sets of Mask Patterns, and Device Manufacturing Method 有权
标题翻译：设计掩模图案集，掩模图案集和设备制造方法的方法
公开(公告)号：US20100021827A1
公开(公告)日：2010-01-28
申请号：US12499519
申请日：2009-07-08
申请人： Sander DE PUTTER , Jozef Maria Finders , Bertus Johan Vleeming
发明人： Sander DE PUTTER , Jozef Maria Finders , Bertus Johan Vleeming
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F7/0035 , G03F1/36 , G03F7/203 , G03F7/70283 , G03F7/70341 , G03F7/70433 , G03F7/70441 , G03F7/70466
摘要： In a multiple-exposure lithographic process a developed resist pattern derived from a first exposure is present within a second resist layer that is exposed in a second exposure of the multiple-exposure lithographic process. The second mask pattern used in the second exposure process includes at least one localized adjustment to at least one feature thereof to compensate for scattering effects of the developed resist pattern that is present when the second exposure is performed.
摘要翻译：在多曝光光刻工艺中，从第一曝光得到的显影抗蚀剂图案存在于在多次曝光光刻工艺的第二次曝光中曝光的第二抗蚀剂层内。在第二曝光过程中使用的第二掩模图案包括对至少一个特征的至少一个局部调整，以补偿当执行第二曝光时存在的显影抗蚀剂图案的散射效应。

47. 发明授权

US07456931B2 Device manufacturing method, computer program product and lithographic apparatus 有权
标题翻译：设备制造方法，计算机程序产品和光刻设备
公开(公告)号：US07456931B2
公开(公告)日：2008-11-25
申请号：US12000189
申请日：2007-12-10
申请人： Laurentius Cornelius De Winter , Jozef Maria Finders , Maria Johanna Agnes Rubingh
发明人： Laurentius Cornelius De Winter , Jozef Maria Finders , Maria Johanna Agnes Rubingh
IPC分类号： G03B27/42
CPC分类号： G03B27/42 , G03F7/70258 , G03F7/705
摘要： A method of optimizing adjustable settings of adjustable elements of a projection system in a lithographic apparatus is disclosed that includes determining an object spectrum for a pattern and an illumination arrangement, determining a symmetry of the object spectrum, constructing a merit function for a wavefront in a pupil plane of the projection system with the settings of the adjustable elements as variables with reference to the symmetry, and optimizing the merit function.
摘要翻译：公开了一种优化光刻设备中的投影系统的可调节元件的可调节设置的方法，其包括确定图案和照明布置的物体光谱，确定物体光谱的对称性，构建物体光谱中的波前的优值函数投影系统的瞳平面与可调元素的设置作为参考对称性的变量，并优化功能函数。

48. 发明授权

US07359029B2 Lithographic apparatus and method of reducing thermal distortion 失效
标题翻译：平版印刷设备和减少热变形的方法
公开(公告)号：US07359029B2
公开(公告)日：2008-04-15
申请号：US11440437
申请日：2006-05-25
申请人： Jozef Maria Finders , Erik Roelof Loopstra
发明人： Jozef Maria Finders , Erik Roelof Loopstra
IPC分类号： G03B27/42
CPC分类号： G03B27/522 , G03F7/70258 , G03F7/70875
摘要： A lithographic apparatus is disclosed that has a heater configured to supply energy to a patterning device to heat the patterning device to form a desired thermal distortion pattern of the patterning device and a controller configured to effect an optical correction in the apparatus corresponding to the desired thermal distortion pattern to reduce the effect of thermal distortion of the patterning device on a pattern.
摘要翻译：公开了一种光刻设备，其具有被配置为向图案形成装置供应能量以加热图案形成装置以形成图案形成装置的期望热变形图案的加热器，以及被配置为在对应于所需热量的装置中实现光学校正的控制器畸变图案，以减少图案形成装置的热变形对图案的影响。

49. 发明授权

US07256873B2 Enhanced lithographic resolution through double exposure 失效
标题翻译：通过双重曝光增强光刻分辨率
公开(公告)号：US07256873B2
公开(公告)日：2007-08-14
申请号：US10765218
申请日：2004-01-28
申请人： Jozef Maria Finders , Donis George Flagello , Steven George Hansen
发明人： Jozef Maria Finders , Donis George Flagello , Steven George Hansen
IPC分类号： G03B27/32 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70433 , G03F7/70466
摘要： A system and method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a reticle pattern into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating a substrate with a pre-specified photoresist layer, and exposing a first of the at least two constituent sub-patterns by directing a projection beam through the first sub-pattern such that the lithographic system produces a first sub-pattern image onto the pre-specified photoresist layer of the substrate. The invention further comprises processing the exposed substrate, exposing a second of the at least two constituent sub-patterns by directing the projection beam through the second sub-pattern such that the lithographic system produces a second sub-pattern image onto the pre-specified photoresist layer of the substrate, and then combining the first and second sub-pattern images to produce a desired pattern on the substrate.
摘要翻译：本文给出了用于增强光刻系统中的图像分辨率的系统和方法。本发明包括将掩模版图案分解为能够被光刻系统光学分辨的至少两个构成子图案，用预定的光致抗蚀剂层涂覆基底，以及暴露至少两个构成子图案中的第一个，通过将投影光束引导通过第一子图案使得光刻系统在基板的预定光致抗蚀剂层上产生第一子图案图像。本发明还包括处理曝光的基板，通过将投影光束引导通过第二子图案来暴露至少两个构成子图案中的第二个，使得光刻系统在预定的光致抗蚀剂上产生第二子图案图像层，然后组合第一和第二子图案图像以在衬底上产生期望的图案。

50. 发明授权

US07256870B2 Method and apparatus for controlling iso-dense bias in lithography 有权
标题翻译：在光刻中控制等密度偏差的方法和装置
公开(公告)号：US07256870B2
公开(公告)日：2007-08-14
申请号：US11046902
申请日：2005-02-01
申请人： Jozef Maria Finders
发明人： Jozef Maria Finders
IPC分类号： G03B27/54 , G03B27/42 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70575
摘要： The present invention relates to a lithographic apparatus and a method of using the apparatus in the manufacture of a device such as an integrated circuit (IC). In particular, the present invention relates to a lithographic apparatus wherein iso-dense bias in a printed pattern on a substrate is capable of being controlled by using radiation with a spectral distribution comprising two or more spectral peaks.
摘要翻译：本发明涉及光刻设备和在制造诸如集成电路（IC）的器件中的装置的方法。特别地，本发明涉及一种光刻设备，其中印刷图案上的等密度偏压能够通过使用具有包括两个或多个光谱峰值的光谱分布的辐射来控制。

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