专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06573184B2 Apparatus and method for depositing thin film on wafer using atomic layer deposition 失效
公开(公告)号：US06573184B2
公开(公告)日：2003-06-03
申请号：US10094571
申请日：2002-03-07
申请人： Young-Hoon Park
发明人： Young-Hoon Park
IPC分类号： H01L2144
CPC分类号： C23C16/45544 , C23C16/45548 , C23C16/45561 , C23C16/45565 , C23C16/45574 , Y10S438/935 , Y10T137/4673
摘要： An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.

42. 发明授权

US08354292B2 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same 有权
标题翻译：具有串扰防止结构的CMOS图像传感器及其制造方法
公开(公告)号：US08354292B2
公开(公告)日：2013-01-15
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L21/339
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

43. 发明申请

US20120164783A1 CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME 有权
标题翻译：具有CROSSTALK预防结构的CMOS图像传感器及其制造方法
公开(公告)号：US20120164783A1
公开(公告)日：2012-06-28
申请号：US13413137
申请日：2012-03-06
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

44. 发明授权

US08138530B2 CMOS image sensor having a crosstalk prevention structure 有权
标题翻译：具有串扰防止结构的CMOS图像传感器
公开(公告)号：US08138530B2
公开(公告)日：2012-03-20
申请号：US12482960
申请日：2009-06-11
申请人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
发明人： Won-Je Park , Young-Hoon Park , Ui-Sik Kim , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Keang
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/14603
摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.
摘要翻译：在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。在P型外延层中形成深P +型阱层。在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。三重阱形成在光电二极管区域和外围电路区域中。三阱用于形成具有不同工作电压的PMOS和NMOS。在光电二极管区域中形成隔离区。光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

45. 发明申请

US20110163363A1 COMS image sensors and methods of manufacturing the same 有权
标题翻译： COMS图像传感器及其制造方法
公开(公告)号：US20110163363A1
公开(公告)日：2011-07-07
申请号：US13064289
申请日：2011-03-16
申请人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
发明人： Ui-Sik Kim , Young-Hoon Park , Won-Je Park , Dae-Cheol Seong , Yeo-Ju Yoon , Bo-Bae Kang
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
摘要： Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）图像传感器（CIS）及其制造方法，传感器包括在其中限定了第一，第二，第三和第四区域的基板上的外延层。可以在第一区域中的外延层的上部形成光电二极管。可以在第二，第三和第四区域中的外延层上形成多个栅极结构。可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层，并且在第三和第四区域中与栅极结构相邻的外延层的上部处形成第二杂质层。可以在光电二极管上方形成滤色器层。可以在滤色器层上形成微透镜。

46. 发明授权

US07863435B2 L-threonine importer from Corynebacterium and a preparation method of a strain producing L-threonine 有权
标题翻译：棒状杆菌的L-苏氨酸进口商和产生L-苏氨酸的菌株的制备方法
公开(公告)号：US07863435B2
公开(公告)日：2011-01-04
申请号：US10582241
申请日：2004-11-23
申请人： Young-Hoon Park , Sang-Jo Lim , Seong-Jun Kim
发明人： Young-Hoon Park , Sang-Jo Lim , Seong-Jun Kim
IPC分类号： C07H21/04 , C12N15/77 , C12P13/04 , A61K31/70
CPC分类号： C07K14/34 , C12P13/08
摘要： The present invention relates to a preparation method of an L-threonine producing strain by utilizing a novel L-threonine importer identified from Corynebacterium glutamicum. The method can be advantageously used for the production of L-threonine by increasing the fermentation concentration of Lthreonine and the yield per unit thereof.
摘要翻译：本发明涉及利用从谷氨酸棒杆菌（Corynebacterium glutamicum）鉴定的新型L-苏氨酸进口商制备L-苏氨酸菌株的制备方法。该方法可有利地用于通过增加L-苏氨酸的发酵浓度和每单位产量来生产L-苏氨酸。

47. 发明授权

US07718414B2 Microorganism of Enterobacteriacae genus haboring genes associated with L-carnitine biosynthesis and method of producing L-carnitine using the microorganism 有权
标题翻译：具有与L-肉碱生物合成相关的基因的肠杆菌属的微生物和使用微生物生产L-肉毒碱的方法
公开(公告)号：US07718414B2
公开(公告)日：2010-05-18
申请号：US11994969
申请日：2006-07-07
申请人： Whan-Koo Kang , Bheong-Uk Lee , Young-Hoon Park , Eun-Sung Koh , Jae-Yeong Ju , Jin-Ho Lee , Hye-Won Kim , Hye-Jin Choi
发明人： Whan-Koo Kang , Bheong-Uk Lee , Young-Hoon Park , Eun-Sung Koh , Jae-Yeong Ju , Jin-Ho Lee , Hye-Won Kim , Hye-Jin Choi
IPC分类号： C12P13/00 , C12N1/20
CPC分类号： C12N9/1007 , C12N9/0071 , C12N9/88 , C12P13/007
摘要： Provided is a microorganism that belongs to Enterobacteriacae and a method of producing L-carnitine using the same. The microorganism includes polynucleotide encoding activity of S-adenosylmethionine-6-N-iysine methyltransferase from Neurospora crassa, polynucleotide encoding activity of 6-N-trimethyllysine hydroxylase, polynucleotide encoding activity of 3-hydroxy-6-N-trimethyllysine aldolase, and polynucleotide encoding activity of γ-trimethylaminoaldehyde dehydrogenase and y-butyrobetaine hydroxylase.
摘要翻译：提供属于肠杆菌属的微生物和使用其的L-肉毒碱的生产方法。微生物包括编码来自粗糙脉孢菌的S-腺苷甲硫氨酸-6-N-依赖型甲基转移酶的活性的多核苷酸，编码6-N-三甲基赖氨酸羟化酶活性的多核苷酸，编码3-羟基-6-N-三甲基赖氨酸醛缩酶活性的多核苷酸，以及编码 γ-三甲基氨基醛脱氢酶和γ-丁基甜菜碱羟化酶的活性。

48. 发明授权

US07638312B2 E.coli mutant containing mutant genes related with tryptophan biosynthesis and production method of tryptophan by using the same 有权
标题翻译：含有与色氨酸生物合成相关的突变基因的大肠杆菌突变体和使用其的色氨酸的生产方法
公开(公告)号：US07638312B2
公开(公告)日：2009-12-29
申请号：US10582196
申请日：2004-11-23
申请人： Young-Hoon Park , Sang-jo Lim , Byoung-Hoon Kim , Seong-Jun Kim , Ho-Soo Lim
发明人： Young-Hoon Park , Sang-jo Lim , Byoung-Hoon Kim , Seong-Jun Kim , Ho-Soo Lim
IPC分类号： C12P13/22 , C12N9/00 , C12N1/20 , C07H21/04
CPC分类号： C07K14/245 , C12N9/88 , C12P13/227
摘要： The present invention relates to a Tryptophan-producing E. coli mutant strain CJ285 (KCCM-10534) containing single or multi mutant genes related with Tryptophan biosynthesis and production method of Tryptophan using the same. More particularly, DNA base sequences and amino acid sequences aroF, aroG, trpR, and tyrR originated from tryptophan producing E. coli mutant strain CJ285 (KCCM-10534) and related with Tryptophan biosynthesis, are disclosed, and E. coli CJ285 containing at least one of the mutant genes is cultivated directly in a glucose-containing fermentation medium, whereby L-tryptophan can be accumulated in the culture medium.
摘要翻译：本发明涉及含有与色氨酸生物合成相关的单个或多个突变基因的色氨酸产生大肠杆菌突变菌株CJ285（KCCM-10534）和使用其的色氨酸生产方法。更具体地，公开了源自产生色氨酸的大肠杆菌突变菌株CJ285（KCCM-10534）并与色氨酸生物合成相关的DNA碱基序列和氨基酸序列aroF，aroG，trpR和tyrR，并且至少含有至少含有其中一个突变基因直接在含葡萄糖的发酵培养基中培养，从而可以将L-色氨酸堆积在培养基中。

49. 发明授权

US07602034B2 Image sensor and method for forming the same 有权
标题翻译：图像传感器及其形成方法
公开(公告)号：US07602034B2
公开(公告)日：2009-10-13
申请号：US11289192
申请日：2005-11-28
申请人： Young-Hoon Park
发明人： Young-Hoon Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14643
摘要： In an image sensor and a method for forming the same, the method comprises: preparing a substrate having a pixel array region and a peripheral circuit region; sequentially stacking a gate electrode layer and a mask layer on the substrate; patterning the gate electrode layer and the mask layer to form a gate pattern; implanting impurities in the substrate in the pixel array region to form a photoelectric conversion region; and removing the mask layer.
摘要翻译：在图像传感器及其形成方法中，所述方法包括：准备具有像素阵列区域和外围电路区域的基板; 在基板上依次堆叠栅电极层和掩模层; 图案化栅电极层和掩模层以形成栅极图案; 在像素阵列区域中的衬底中注入杂质以形成光电转换区域; 并去除掩模层。

50. 发明申请

US20080199920A1 S-Adenosylmethionine-6-N-Lysine-Methyltransferase From Neurospora Crassa, A Gene Encoding The Same, A Vector And Host Cell Containing The Same, And Method For Producing Trimethyllysine Using The Host Cell 有权
标题翻译：来自粗糙脉孢菌的S-腺苷甲硫氨酸-6-N-赖氨酸 - 甲基转移酶，编码它的基因，含有它的载体和宿主细胞以及使用宿主细胞产生三甲基赖氨酸的方法
公开(公告)号：US20080199920A1
公开(公告)日：2008-08-21
申请号：US11994938
申请日：2006-07-07
申请人： Whan-Koo Kang , Bheong-Uk Lee , Young-Hoon Park , Eun-Sung Koh , Jae-Yeong Ju , Jin-Ho Lee , Hye-Won Kim , Hye-Jin Choi
发明人： Whan-Koo Kang , Bheong-Uk Lee , Young-Hoon Park , Eun-Sung Koh , Jae-Yeong Ju , Jin-Ho Lee , Hye-Won Kim , Hye-Jin Choi
IPC分类号： C12P13/08 , C12N9/10 , C07H21/04 , C12N15/00 , C12N1/20
CPC分类号： C12P13/08 , C12N9/1085
摘要： Provided is S-adenosylmethionine-6-N-lysine-methyl-transferase obtained from Neνrospora crassa, a polynucleotide encoding the same, a vector and host cell containing the polynucleotide, and a method of producing trimethyllysine by culturing the host cell.
摘要翻译：本发明提供从粗核粗核菌（Nenurospora crassa）获得的S-腺苷甲硫氨酸-6-N-赖氨酸甲基转移酶，其编码该多核苷酸的多核苷酸，含有多核苷酸的载体和宿主细胞，以及通过培养宿主细胞产生三甲基赖氨酸的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式